KR101777264B1 - 발진기 및 상기 발진기의 동작 방법 - Google Patents
발진기 및 상기 발진기의 동작 방법 Download PDFInfo
- Publication number
- KR101777264B1 KR101777264B1 KR1020100111000A KR20100111000A KR101777264B1 KR 101777264 B1 KR101777264 B1 KR 101777264B1 KR 1020100111000 A KR1020100111000 A KR 1020100111000A KR 20100111000 A KR20100111000 A KR 20100111000A KR 101777264 B1 KR101777264 B1 KR 101777264B1
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- KR
- South Korea
- Prior art keywords
- signal
- bias
- oscillation
- output node
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
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- Hall/Mr Elements (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100111000A KR101777264B1 (ko) | 2010-11-09 | 2010-11-09 | 발진기 및 상기 발진기의 동작 방법 |
| US13/064,627 US8471640B2 (en) | 2010-11-09 | 2011-04-05 | Oscillators and methods of operating the same |
| JP2011154678A JP5944119B2 (ja) | 2010-11-09 | 2011-07-13 | 発振器及び該発振器の動作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100111000A KR101777264B1 (ko) | 2010-11-09 | 2010-11-09 | 발진기 및 상기 발진기의 동작 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120049641A KR20120049641A (ko) | 2012-05-17 |
| KR101777264B1 true KR101777264B1 (ko) | 2017-09-12 |
Family
ID=46019042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100111000A Active KR101777264B1 (ko) | 2010-11-09 | 2010-11-09 | 발진기 및 상기 발진기의 동작 방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8471640B2 (https=) |
| JP (1) | JP5944119B2 (https=) |
| KR (1) | KR101777264B1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2957209B1 (fr) * | 2010-03-03 | 2012-04-13 | Commissariat Energie Atomique | Oscillateur radiofrequence et procede de generation d'un signal oscillant |
| JP6267871B2 (ja) * | 2013-04-18 | 2018-01-24 | Tdk株式会社 | 発振器、整流器および送受信装置 |
| KR101695468B1 (ko) * | 2014-07-09 | 2017-01-13 | 한국과학기술원 | 트랜지스터와 결합하여 직접화한 고출력 스핀발진기 |
| US10601368B2 (en) * | 2016-05-19 | 2020-03-24 | Seagate Technology Llc | Solid state microwave generator |
| US10110165B2 (en) | 2016-05-19 | 2018-10-23 | Seagate Technology Llc | Solid state microwave generator |
| JP6826349B2 (ja) * | 2016-12-02 | 2021-02-03 | 国立研究開発法人産業技術総合研究所 | 位相可変型逓倍器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070236105A1 (en) * | 2005-09-13 | 2007-10-11 | Freescale Semiconductor, Inc. | Oscillator and method of manufacture |
| JP2008311373A (ja) * | 2007-06-13 | 2008-12-25 | Toshiba Corp | 磁性多層膜通電素子 |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6560077B2 (en) | 2000-01-10 | 2003-05-06 | The University Of Alabama | CPP spin-valve device |
| KR100506064B1 (ko) | 2002-12-21 | 2005-08-03 | 주식회사 하이닉스반도체 | 자기저항 센서 및 이를 이용한 센싱 셀 어레이 |
| US7054119B2 (en) | 2003-06-18 | 2006-05-30 | Hewlett-Packard Development Company, L.P. | Coupled ferromagnetic systems having modified interfaces |
| US7161829B2 (en) | 2003-09-19 | 2007-01-09 | Grandis, Inc. | Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements |
| US7440314B2 (en) | 2004-03-05 | 2008-10-21 | Nec Corporation | Toggle-type magnetoresistive random access memory |
| US7471491B2 (en) * | 2004-03-30 | 2008-12-30 | Kabushiki Kaisha Toshiba | Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element |
| US7057921B2 (en) | 2004-05-11 | 2006-06-06 | Grandis, Inc. | Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same |
| US7088609B2 (en) | 2004-05-11 | 2006-08-08 | Grandis, Inc. | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same |
| KR100697779B1 (ko) | 2005-03-05 | 2007-03-20 | 한국과학기술연구원 | Soi기판을 이용한 하이브리드형 자성체/반도체 스핀소자및 그 제조방법 |
| JP4677589B2 (ja) | 2005-03-18 | 2011-04-27 | 独立行政法人科学技術振興機構 | 伝送回路一体型マイクロ波発生素子並びにマイクロ波検出方法、マイクロ波検出回路、マイクロ波検出素子及び伝送回路一体型マイクロ波検出素子 |
| JP2006319259A (ja) | 2005-05-16 | 2006-11-24 | Fujitsu Ltd | 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置 |
| US7224601B2 (en) | 2005-08-25 | 2007-05-29 | Grandis Inc. | Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element |
| JP4886268B2 (ja) | 2005-10-28 | 2012-02-29 | 株式会社東芝 | 高周波発振素子、ならびにそれを用いた車載レーダー装置、車間通信装置および情報端末間通信装置 |
| FR2892871B1 (fr) | 2005-11-02 | 2007-11-23 | Commissariat Energie Atomique | Oscillateur radio frequence a courant elelctrique polarise en spin |
| JP2007221764A (ja) * | 2006-01-20 | 2007-08-30 | Sharp Corp | 可変周波数発振回路、およびそれを備えた高周波回路 |
| US7610674B2 (en) | 2006-02-13 | 2009-11-03 | Headway Technologies, Inc. | Method to form a current confining path of a CPP GMR device |
| US7732881B2 (en) | 2006-11-01 | 2010-06-08 | Avalanche Technology, Inc. | Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) |
| US7678475B2 (en) | 2006-05-05 | 2010-03-16 | Slavin Andrei N | Spin-torque devices |
| JP2007305629A (ja) | 2006-05-08 | 2007-11-22 | Fuji Electric Holdings Co Ltd | スピン注入型磁化反転素子 |
| US7616412B2 (en) | 2006-07-21 | 2009-11-10 | Carnegie Melon University | Perpendicular spin-torque-driven magnetic oscillator |
| JP4633689B2 (ja) | 2006-08-23 | 2011-02-16 | シャープ株式会社 | マイクロ波発振素子及びその製造方法、並びに該マイクロ波発振素子を備えたマイクロ波発振装置 |
| JP4996187B2 (ja) | 2006-09-25 | 2012-08-08 | 株式会社東芝 | 磁性発振素子 |
| US7589600B2 (en) | 2006-10-31 | 2009-09-15 | Seagate Technology Llc | Spin oscillator device |
| JP5143848B2 (ja) * | 2007-02-21 | 2013-02-13 | コミサリア ア レネルジ アトミ−ク エ オエネルジー アルテルナティヴ | スピントランスファトルク発振器 |
| US7994865B1 (en) * | 2007-06-27 | 2011-08-09 | Marvell International Ltd. | Even order distortion cancellation in single-ended input, differential output amplifiers using feedback |
| KR100866973B1 (ko) | 2007-07-13 | 2008-11-05 | 이화여자대학교 산학협력단 | 자기 메모리 셀 |
| KR20090011247A (ko) | 2007-07-25 | 2009-02-02 | 삼성전자주식회사 | 디스크 디펙트 목록 생성 방법, 디스크 디펙트 목록 저장매체, 및 하드디스크 드라이브 제어 방법 |
| US7982275B2 (en) | 2007-08-22 | 2011-07-19 | Grandis Inc. | Magnetic element having low saturation magnetization |
| JP2009080875A (ja) | 2007-09-25 | 2009-04-16 | Toshiba Corp | 磁気ヘッド及び磁気記録装置 |
| JP5233234B2 (ja) | 2007-10-05 | 2013-07-10 | 富士通株式会社 | 半導体装置およびその製造方法 |
| JP2009099741A (ja) | 2007-10-16 | 2009-05-07 | Fujitsu Ltd | 強磁性トンネル接合素子、強磁性トンネル接合素子の製造方法、磁気ヘッド、磁気記憶装置、及び磁気メモリ装置 |
| JP5278876B2 (ja) | 2007-10-31 | 2013-09-04 | 独立行政法人産業技術総合研究所 | マイクロ波発振素子および検出素子 |
| KR100929315B1 (ko) | 2007-10-31 | 2009-11-27 | 주식회사 하이닉스반도체 | 수직형 스핀 트랜지스터 및 그 제조 방법 |
| JP5224803B2 (ja) | 2007-12-26 | 2013-07-03 | 株式会社日立製作所 | 磁気メモリ及び磁気メモリの書き込み方法 |
| JP5036585B2 (ja) | 2008-02-13 | 2012-09-26 | 株式会社東芝 | 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置 |
| JP4724196B2 (ja) | 2008-03-25 | 2011-07-13 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| JP4978553B2 (ja) | 2008-05-12 | 2012-07-18 | ソニー株式会社 | 発振デバイス、通信装置、及び磁性素子による発振方法 |
| KR101114281B1 (ko) | 2008-05-15 | 2012-03-05 | 고려대학교 산학협력단 | 스핀전달토크현상을 이용한 고주파 마이크로 웨이브 및고주파 자기장 생성 소자 |
| US7795984B2 (en) | 2008-06-04 | 2010-09-14 | Seagate Technology, Llc | Magnetic oscillator with multiple coherent phase output |
| US20090303779A1 (en) | 2008-06-05 | 2009-12-10 | Young-Shying Chen | Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents |
| US8053244B2 (en) | 2008-08-13 | 2011-11-08 | Seagate Technology Llc | Magnetic oscillator based biosensor |
| US20100308923A1 (en) * | 2009-06-04 | 2010-12-09 | Seagate Technology Llc | Magnetic voltage controlled oscillator |
| US8692343B2 (en) | 2010-04-26 | 2014-04-08 | Headway Technologies, Inc. | MR enhancing layer (MREL) for spintronic devices |
| US8581672B2 (en) | 2010-05-14 | 2013-11-12 | Nokia Corporation | Frequency synthesis |
| KR20120015943A (ko) * | 2010-08-13 | 2012-02-22 | 삼성전자주식회사 | 발진기 및 상기 발진기의 동작 방법 |
-
2010
- 2010-11-09 KR KR1020100111000A patent/KR101777264B1/ko active Active
-
2011
- 2011-04-05 US US13/064,627 patent/US8471640B2/en active Active
- 2011-07-13 JP JP2011154678A patent/JP5944119B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070236105A1 (en) * | 2005-09-13 | 2007-10-11 | Freescale Semiconductor, Inc. | Oscillator and method of manufacture |
| JP2008311373A (ja) * | 2007-06-13 | 2008-12-25 | Toshiba Corp | 磁性多層膜通電素子 |
Non-Patent Citations (1)
| Title |
|---|
| A GHz Spintronic-Based RF Oscillator(2010. 1. 공개) |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012105248A (ja) | 2012-05-31 |
| US8471640B2 (en) | 2013-06-25 |
| KR20120049641A (ko) | 2012-05-17 |
| US20120112796A1 (en) | 2012-05-10 |
| JP5944119B2 (ja) | 2016-07-05 |
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