KR101746197B1 - 반도체 장치의 제작 방법 및 반도체 장치의 검사 방법 - Google Patents

반도체 장치의 제작 방법 및 반도체 장치의 검사 방법 Download PDF

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Publication number
KR101746197B1
KR101746197B1 KR1020110059107A KR20110059107A KR101746197B1 KR 101746197 B1 KR101746197 B1 KR 101746197B1 KR 1020110059107 A KR1020110059107 A KR 1020110059107A KR 20110059107 A KR20110059107 A KR 20110059107A KR 101746197 B1 KR101746197 B1 KR 101746197B1
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transistor
curve
test
insulating layer
gate
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KR20120000504A (ko
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히로미치 고도
슈헤이 요시토미
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2625—Circuits therefor for testing field effect transistors, i.e. FET's for measuring gain factor thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020110059107A 2010-06-25 2011-06-17 반도체 장치의 제작 방법 및 반도체 장치의 검사 방법 Expired - Fee Related KR101746197B1 (ko)

Applications Claiming Priority (2)

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JP2010145410 2010-06-25
JPJP-P-2010-145410 2010-06-25

Publications (2)

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KR20120000504A KR20120000504A (ko) 2012-01-02
KR101746197B1 true KR101746197B1 (ko) 2017-06-12

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US (2) US8912016B2 (https=)
JP (1) JP5774916B2 (https=)
KR (1) KR101746197B1 (https=)

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WO2015052858A1 (ja) * 2013-10-10 2015-04-16 パナソニック株式会社 薄膜トランジスタ及びその製造方法
JP6452485B2 (ja) * 2014-02-28 2019-01-16 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法
CN104155588B (zh) * 2014-07-30 2017-05-24 合肥鑫晟光电科技有限公司 一种薄膜晶体管的测试装置及测试方法
CN104267329B (zh) * 2014-10-21 2017-03-15 京东方科技集团股份有限公司 晶体管测试电路以及测试方法
CN104764959A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 点灯治具
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EP3403219A4 (en) 2016-01-11 2020-03-04 Netradyne, Inc. DRIVER BEHAVIOR MONITORING
JP6906978B2 (ja) 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
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JP6781120B2 (ja) * 2017-08-18 2020-11-04 株式会社日本マイクロニクス 検査装置
JP7108386B2 (ja) 2017-08-24 2022-07-28 住友化学株式会社 電荷トラップ評価方法
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