KR101722089B1 - 경화성 오가노폴리실록산 조성물 및 광반도체 장치 - Google Patents

경화성 오가노폴리실록산 조성물 및 광반도체 장치 Download PDF

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KR101722089B1
KR101722089B1 KR1020127032664A KR20127032664A KR101722089B1 KR 101722089 B1 KR101722089 B1 KR 101722089B1 KR 1020127032664 A KR1020127032664 A KR 1020127032664A KR 20127032664 A KR20127032664 A KR 20127032664A KR 101722089 B1 KR101722089 B1 KR 101722089B1
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KR20130112712A (ko
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마코토 요시타케
미에코 야마카와
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다우 코닝 도레이 캄파니 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
KR1020127032664A 2010-06-29 2011-06-28 경화성 오가노폴리실록산 조성물 및 광반도체 장치 Active KR101722089B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-147690 2010-06-29
JP2010147690A JP5534977B2 (ja) 2010-06-29 2010-06-29 硬化性オルガノポリシロキサン組成物および光半導体装置
PCT/JP2011/065247 WO2012002560A1 (en) 2010-06-29 2011-06-28 Curable organopolysiloxane composition and optical semiconductor device

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Publication Number Publication Date
KR20130112712A KR20130112712A (ko) 2013-10-14
KR101722089B1 true KR101722089B1 (ko) 2017-03-31

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US (1) US8772812B2 (OSRAM)
EP (1) EP2588538B1 (OSRAM)
JP (1) JP5534977B2 (OSRAM)
KR (1) KR101722089B1 (OSRAM)
CN (1) CN103003364B (OSRAM)
TW (1) TWI512044B (OSRAM)
WO (1) WO2012002560A1 (OSRAM)

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JP5680889B2 (ja) 2010-06-29 2015-03-04 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5693063B2 (ja) * 2010-07-01 2015-04-01 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
JP5817377B2 (ja) * 2011-09-20 2015-11-18 住友ベークライト株式会社 シリコーンゴム系硬化性組成物、シリコーンゴムの製造方法、シリコーンゴム、成形体および医療用チューブ
JP6057503B2 (ja) * 2011-09-21 2017-01-11 東レ・ダウコーニング株式会社 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
JP5706357B2 (ja) * 2012-02-24 2015-04-22 富士フイルム株式会社 基板モジュールおよびその製造方法
JP6047769B2 (ja) * 2012-06-01 2016-12-21 シチズン時計株式会社 照明装置
JP5524424B1 (ja) * 2012-09-27 2014-06-18 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 光半導体素子封止用シリコーン組成物および光半導体装置
JP6081774B2 (ja) * 2012-10-30 2017-02-15 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
US9181400B2 (en) 2012-11-09 2015-11-10 Sumitomo Seika Chemicals Co., Ltd. Silicone resin composition, cured silicone resin, and sealed optical semiconductor element
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EP3081365B1 (en) 2013-05-10 2021-02-17 ABL IP Holding LLC Method and apparatus for manufacturing silicone optics
JP6467125B2 (ja) * 2013-06-27 2019-02-06 株式会社カネカ 硬化性樹脂組成物、該組成物を硬化させてなる硬化物
EP3037482A4 (en) * 2013-08-19 2017-03-29 Sumitomo Seika Chemicals CO. LTD. Addition-cured silicone resin composition, curing product of addition-cured silicone resin, and optical semiconductor element sealing body
WO2015025577A1 (ja) * 2013-08-20 2015-02-26 住友精化株式会社 縮合硬化型シリコーン樹脂組成物、縮合硬化型シリコーン樹脂硬化物、及び、光半導体素子封止体
WO2015083446A1 (ja) * 2013-12-06 2015-06-11 住友精化株式会社 付加硬化型シリコーン樹脂組成物、付加硬化型シリコーン樹脂硬化物、及び、光半導体素子封止体
JP6258048B2 (ja) * 2014-01-28 2018-01-10 信越化学工業株式会社 有機変性シリコーン樹脂組成物
WO2015129140A1 (ja) * 2014-02-28 2015-09-03 住友精化株式会社 付加硬化型シリコーン樹脂組成物、付加硬化型シリコーン樹脂硬化物、及び、光半導体素子封止体
TWI506058B (zh) 2014-03-18 2015-11-01 Benq Materials Corp 可固化矽樹脂組成物
EP3153548A4 (en) * 2014-06-03 2018-01-31 Dow Corning Toray Co., Ltd. Curable silicone composition and optical semiconductor device
JP6592438B2 (ja) * 2014-07-30 2019-10-16 住友精化株式会社 シリコーン樹脂組成物、シリコーン樹脂硬化物、及び、光半導体素子封止体
EP3133105B1 (en) 2015-07-31 2020-12-09 Shin-Etsu Chemical Co., Ltd. Hydrosilyl-containing organopolysiloxane, making method, addition curable silicone composition, and semiconductor package
CN108475713B (zh) 2016-01-15 2021-06-18 西铁城时计株式会社 缩合反应型芯片粘合剂、led发光装置及其制造方法
JP6776954B2 (ja) * 2016-04-15 2020-10-28 信越化学工業株式会社 付加硬化性シリコーン樹脂組成物
JP6702224B2 (ja) 2017-02-17 2020-05-27 信越化学工業株式会社 付加硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材
EP3587498B1 (en) 2017-02-27 2022-02-16 DuPont Toray Specialty Materials Kabushiki Kaisha Curable organopolysiloxane composition and semiconductor device
TWI762649B (zh) 2017-06-26 2022-05-01 日商杜邦東麗特殊材料股份有限公司 黏晶用固化性矽組合物
TWI791554B (zh) * 2017-07-31 2023-02-11 美商陶氏有機矽公司 可固化有機聚矽氧烷組成物及光學半導體裝置
CN109749461A (zh) * 2018-12-30 2019-05-14 苏州桐力光电股份有限公司 一种光学透明硅树脂
JP7562201B2 (ja) * 2019-07-30 2024-10-07 デュポン・東レ・スペシャルティ・マテリアル株式会社 ホットメルト性硬化性シリコーン組成物、封止剤、フィルム、光半導体素子
JP7094926B2 (ja) 2019-09-02 2022-07-04 信越化学工業株式会社 熱硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材
KR20230030637A (ko) 2020-06-30 2023-03-06 다우 도레이 캄파니 리미티드 경화성 실리콘 조성물 및 그의 경화물
TWI898121B (zh) * 2021-03-23 2025-09-21 日商陶氏東麗股份有限公司 有機聚矽氧烷組成物

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US20090118441A1 (en) 2005-11-09 2009-05-07 Shinichi Yamamoto Curable Silicone Composition
WO2009017251A1 (en) 2007-07-31 2009-02-05 Dow Corning Toray Co., Ltd. Curable silicone composition

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WO2012002560A1 (en) 2012-01-05
EP2588538B1 (en) 2014-04-30
CN103003364A (zh) 2013-03-27
EP2588538A1 (en) 2013-05-08
JP2012012434A (ja) 2012-01-19
TW201213443A (en) 2012-04-01
JP5534977B2 (ja) 2014-07-02
KR20130112712A (ko) 2013-10-14
CN103003364B (zh) 2014-10-08
US8772812B2 (en) 2014-07-08
TWI512044B (zh) 2015-12-11
US20130134609A1 (en) 2013-05-30

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