KR101719628B1 - 발광 소자 패키지 - Google Patents

발광 소자 패키지 Download PDF

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Publication number
KR101719628B1
KR101719628B1 KR1020140145830A KR20140145830A KR101719628B1 KR 101719628 B1 KR101719628 B1 KR 101719628B1 KR 1020140145830 A KR1020140145830 A KR 1020140145830A KR 20140145830 A KR20140145830 A KR 20140145830A KR 101719628 B1 KR101719628 B1 KR 101719628B1
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KR
South Korea
Prior art keywords
layer
electrode
semiconductor layer
light emitting
contact
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KR1020140145830A
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English (en)
Korean (ko)
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KR20160049252A (ko
Inventor
임범진
임우식
서재원
Original Assignee
엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020140145830A priority Critical patent/KR101719628B1/ko
Priority to EP15189020.9A priority patent/EP3016152B1/en
Priority to JP2015200947A priority patent/JP6826364B2/ja
Priority to US14/922,620 priority patent/US9559264B2/en
Priority to CN201510706196.0A priority patent/CN105552189A/zh
Publication of KR20160049252A publication Critical patent/KR20160049252A/ko
Application granted granted Critical
Publication of KR101719628B1 publication Critical patent/KR101719628B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020140145830A 2014-10-27 2014-10-27 발광 소자 패키지 Active KR101719628B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020140145830A KR101719628B1 (ko) 2014-10-27 2014-10-27 발광 소자 패키지
EP15189020.9A EP3016152B1 (en) 2014-10-27 2015-10-08 Light emitting diode package and light emitting apparatus including the package
JP2015200947A JP6826364B2 (ja) 2014-10-27 2015-10-09 発光素子パッケージ及びそれを含む発光装置
US14/922,620 US9559264B2 (en) 2014-10-27 2015-10-26 Light emitting device package and light emitting apparatus including the package
CN201510706196.0A CN105552189A (zh) 2014-10-27 2015-10-27 发光器件封装和包括该封装的发光设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140145830A KR101719628B1 (ko) 2014-10-27 2014-10-27 발광 소자 패키지

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170033760A Division KR20170034813A (ko) 2017-03-17 2017-03-17 발광 소자 패키지

Publications (2)

Publication Number Publication Date
KR20160049252A KR20160049252A (ko) 2016-05-09
KR101719628B1 true KR101719628B1 (ko) 2017-03-24

Family

ID=54288728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140145830A Active KR101719628B1 (ko) 2014-10-27 2014-10-27 발광 소자 패키지

Country Status (5)

Country Link
US (1) US9559264B2 (enExample)
EP (1) EP3016152B1 (enExample)
JP (1) JP6826364B2 (enExample)
KR (1) KR101719628B1 (enExample)
CN (1) CN105552189A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190214514A1 (en) * 2016-07-05 2019-07-11 Lg Innotek Co., Ltd. Semiconductor element
KR102372023B1 (ko) * 2017-06-05 2022-03-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자
KR102621240B1 (ko) * 2019-02-15 2024-01-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
WO2021046685A1 (zh) * 2019-09-09 2021-03-18 重庆康佳光电技术研究院有限公司 一种led芯片、led、数组及led的封装方法
KR102845535B1 (ko) * 2021-04-06 2025-08-13 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012138499A (ja) 2010-12-27 2012-07-19 Rohm Co Ltd 発光素子、発光素子ユニットおよび発光素子パッケージ

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JP3503439B2 (ja) * 1997-09-11 2004-03-08 日亜化学工業株式会社 窒化物半導体素子
KR20050041536A (ko) * 2003-10-31 2005-05-04 엘지이노텍 주식회사 발광소자
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
TWI531088B (zh) * 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
KR20110135103A (ko) * 2010-06-10 2011-12-16 에스티에스반도체통신 주식회사 반도체 발광 소자 및 그 제조 방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP2012124429A (ja) * 2010-12-10 2012-06-28 Rohm Co Ltd 発光素子、発光素子ユニット、発光素子パッケージおよび発光素子の製造方法
KR101712050B1 (ko) * 2011-06-10 2017-03-03 엘지이노텍 주식회사 발광 소자 패키지
KR20130024089A (ko) * 2011-08-30 2013-03-08 엘지이노텍 주식회사 발광소자
KR101654339B1 (ko) 2011-10-28 2016-09-06 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
DE102012101889A1 (de) * 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TWI455665B (zh) * 2012-11-05 2014-10-01 錸鑽科技股份有限公司 覆晶式發光二極體封裝模組及其製法
JP6100598B2 (ja) * 2013-04-25 2017-03-22 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
CN103367618B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光芯片

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JP2012138499A (ja) 2010-12-27 2012-07-19 Rohm Co Ltd 発光素子、発光素子ユニットおよび発光素子パッケージ

Also Published As

Publication number Publication date
KR20160049252A (ko) 2016-05-09
EP3016152A1 (en) 2016-05-04
JP2016086159A (ja) 2016-05-19
CN105552189A (zh) 2016-05-04
EP3016152B1 (en) 2019-05-15
US9559264B2 (en) 2017-01-31
JP6826364B2 (ja) 2021-02-03
US20160118543A1 (en) 2016-04-28

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