KR101710849B1 - 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법 - Google Patents

정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법 Download PDF

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KR101710849B1
KR101710849B1 KR1020167015687A KR20167015687A KR101710849B1 KR 101710849 B1 KR101710849 B1 KR 101710849B1 KR 1020167015687 A KR1020167015687 A KR 1020167015687A KR 20167015687 A KR20167015687 A KR 20167015687A KR 101710849 B1 KR101710849 B1 KR 101710849B1
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semiconductor
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semiconductor chip
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KR20160075810A (ko
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칼 엔글
베르톨 한
클라우스 스트레우벨
말쿠스 클라인
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오스람 옵토 세미컨덕터스 게엠베하
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    • H01L27/15—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L27/0255—
    • H01L33/02—
    • H01L33/36—
    • H01L33/382—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
KR1020167015687A 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법 Active KR101710849B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008034560.1A DE102008034560B4 (de) 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
DE102008034560.1 2008-07-24
PCT/DE2009/000885 WO2010009690A1 (de) 2008-07-24 2009-06-25 Strahlungemittierender halbleiterchip mit schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren

Related Parent Applications (1)

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KR1020107020375A Division KR101632082B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법

Publications (2)

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KR20160075810A KR20160075810A (ko) 2016-06-29
KR101710849B1 true KR101710849B1 (ko) 2017-02-27

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KR1020167015687A Active KR101710849B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법
KR1020107020375A Active KR101632082B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법

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Country Status (7)

Country Link
US (1) US8710537B2 (https=)
EP (2) EP3128555B1 (https=)
JP (1) JP5511813B2 (https=)
KR (2) KR101710849B1 (https=)
CN (1) CN101971344B (https=)
DE (1) DE102008034560B4 (https=)
WO (1) WO2010009690A1 (https=)

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DE102010013494A1 (de) * 2010-03-31 2011-10-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
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KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
DE102011011378B4 (de) * 2011-02-16 2025-10-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
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JP5887638B2 (ja) 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101973608B1 (ko) * 2011-06-30 2019-04-29 엘지이노텍 주식회사 발광소자
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
CN102522400B (zh) * 2011-11-30 2014-11-26 晶科电子（广州）有限公司 一种防静电损伤的垂直发光器件及其制造方法
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
TWI661578B (zh) 2013-06-20 2019-06-01 Epistar Corporation 發光裝置及發光陣列
TWI536605B (zh) * 2013-08-20 2016-06-01 隆達電子股份有限公司 發光二極體
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6351531B2 (ja) 2015-03-23 2018-07-04 株式会社東芝 半導体発光素子
DE102015108532A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
WO2021038635A1 (ja) * 2019-08-23 2021-03-04 シャープ株式会社 発光素子、表示装置、および発光素子の製造方法
US20250047063A1 (en) * 2022-02-08 2025-02-06 Ams-Osram International Gmbh Laser diode component
EP4328985A1 (en) 2022-08-24 2024-02-28 Albert-Ludwigs-Universität Freiburg Micro led, neural implant, and method of fabricating a micro led

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US20070069218A1 (en) * 2005-09-29 2007-03-29 Ming-Sheng Chen Light-emitting diode chip
JP2007294981A (ja) 2006-04-21 2007-11-08 Philips Lumileds Lightng Co Llc 集積電子構成要素を有する半導体発光装置

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Also Published As

Publication number Publication date
JP5511813B2 (ja) 2014-06-04
WO2010009690A1 (de) 2010-01-28
DE102008034560A1 (de) 2010-02-04
US8710537B2 (en) 2014-04-29
EP3128555B1 (de) 2021-08-18
CN101971344A (zh) 2011-02-09
EP3128555A1 (de) 2017-02-08
CN101971344B (zh) 2012-10-17
DE102008034560B4 (de) 2022-10-27
EP2304799A1 (de) 2011-04-06
EP2304799B1 (de) 2016-10-26
JP2011528855A (ja) 2011-11-24
US20120018763A1 (en) 2012-01-26
KR101632082B1 (ko) 2016-06-20
KR20160075810A (ko) 2016-06-29
KR20110031897A (ko) 2011-03-29

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