DE102008034560B4 - Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips - Google Patents

Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips Download PDF

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Publication number
DE102008034560B4
DE102008034560B4 DE102008034560.1A DE102008034560A DE102008034560B4 DE 102008034560 B4 DE102008034560 B4 DE 102008034560B4 DE 102008034560 A DE102008034560 A DE 102008034560A DE 102008034560 B4 DE102008034560 B4 DE 102008034560B4
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Prior art keywords
semiconductor
layer
semiconductor layer
radiation
carrier
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DE102008034560.1A
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German (de)
English (en)
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DE102008034560A1 (de
Inventor
Dr. Engl Karl
Dr. Hahn Berthold
Dr. Streubel Klaus
Dr. Klein Markus
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to DE102008034560.1A priority Critical patent/DE102008034560B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to EP16187828.5A priority patent/EP3128555B1/de
Priority to PCT/DE2009/000885 priority patent/WO2010009690A1/de
Priority to US12/922,736 priority patent/US8710537B2/en
Priority to JP2011519023A priority patent/JP5511813B2/ja
Priority to CN2009801090394A priority patent/CN101971344B/zh
Priority to EP09775907.0A priority patent/EP2304799B1/de
Priority to KR1020167015687A priority patent/KR101710849B1/ko
Priority to KR1020107020375A priority patent/KR101632082B1/ko
Publication of DE102008034560A1 publication Critical patent/DE102008034560A1/de
Application granted granted Critical
Publication of DE102008034560B4 publication Critical patent/DE102008034560B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
DE102008034560.1A 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips Active DE102008034560B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102008034560.1A DE102008034560B4 (de) 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
PCT/DE2009/000885 WO2010009690A1 (de) 2008-07-24 2009-06-25 Strahlungemittierender halbleiterchip mit schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren
US12/922,736 US8710537B2 (en) 2008-07-24 2009-06-25 Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
JP2011519023A JP5511813B2 (ja) 2008-07-24 2009-06-25 静電放電に対する保護を有する放射放出半導体チップおよびその製造方法
EP16187828.5A EP3128555B1 (de) 2008-07-24 2009-06-25 Leuchtdiodenchip mit integriertem schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren
CN2009801090394A CN101971344B (zh) 2008-07-24 2009-06-25 具有静电放电保护单元的辐射发射型半导体芯片及其制造方法
EP09775907.0A EP2304799B1 (de) 2008-07-24 2009-06-25 Strahlungemittieren der halbleiterchip mit schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren
KR1020167015687A KR101710849B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법
KR1020107020375A KR101632082B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008034560.1A DE102008034560B4 (de) 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips

Publications (2)

Publication Number Publication Date
DE102008034560A1 DE102008034560A1 (de) 2010-02-04
DE102008034560B4 true DE102008034560B4 (de) 2022-10-27

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DE102008034560.1A Active DE102008034560B4 (de) 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips

Country Status (7)

Country Link
US (1) US8710537B2 (https=)
EP (2) EP3128555B1 (https=)
JP (1) JP5511813B2 (https=)
KR (2) KR101710849B1 (https=)
CN (1) CN101971344B (https=)
DE (1) DE102008034560B4 (https=)
WO (1) WO2010009690A1 (https=)

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DE102008034560B4 (de) 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009032486A1 (de) 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010013494A1 (de) * 2010-03-31 2011-10-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
DE102011011378B4 (de) * 2011-02-16 2025-10-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
TW201240146A (en) * 2011-03-16 2012-10-01 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip
TW201240147A (en) * 2011-03-22 2012-10-01 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip
CN102694098A (zh) * 2011-03-25 2012-09-26 鸿富锦精密工业（深圳）有限公司 半导体发光芯片
JP5887638B2 (ja) 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101973608B1 (ko) * 2011-06-30 2019-04-29 엘지이노텍 주식회사 발광소자
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
CN102522400B (zh) * 2011-11-30 2014-11-26 晶科电子（广州）有限公司 一种防静电损伤的垂直发光器件及其制造方法
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
TWI661578B (zh) 2013-06-20 2019-06-01 Epistar Corporation 發光裝置及發光陣列
TWI536605B (zh) * 2013-08-20 2016-06-01 隆達電子股份有限公司 發光二極體
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6351531B2 (ja) 2015-03-23 2018-07-04 株式会社東芝 半導体発光素子
DE102015108532A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
WO2021038635A1 (ja) * 2019-08-23 2021-03-04 シャープ株式会社 発光素子、表示装置、および発光素子の製造方法
US20250047063A1 (en) * 2022-02-08 2025-02-06 Ams-Osram International Gmbh Laser diode component
EP4328985A1 (en) 2022-08-24 2024-02-28 Albert-Ludwigs-Universität Freiburg Micro led, neural implant, and method of fabricating a micro led

Citations (5)

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DE10147886A1 (de) 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Lumineszenzdiode und Herstellungsverfahren
DE102004012219A1 (de) 2003-09-16 2005-06-30 Opto Tech Corp. Lichtemittierende Vorrichtung mit vergrößertem aktiven lichtemittierenden Bereich
US20060056123A1 (en) 2004-09-15 2006-03-16 Sanken Electric Co., Ltd. Light-emitting semiconductor device having an overvoltage protector, and method of fabrication
US20060060880A1 (en) 2004-09-17 2006-03-23 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity
US20070069218A1 (en) 2005-09-29 2007-03-29 Ming-Sheng Chen Light-emitting diode chip

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DE102008034560B4 (de) 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips

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Publication number Priority date Publication date Assignee Title
DE10147886A1 (de) 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Lumineszenzdiode und Herstellungsverfahren
DE102004012219A1 (de) 2003-09-16 2005-06-30 Opto Tech Corp. Lichtemittierende Vorrichtung mit vergrößertem aktiven lichtemittierenden Bereich
US20060056123A1 (en) 2004-09-15 2006-03-16 Sanken Electric Co., Ltd. Light-emitting semiconductor device having an overvoltage protector, and method of fabrication
US20060060880A1 (en) 2004-09-17 2006-03-23 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity
US20070069218A1 (en) 2005-09-29 2007-03-29 Ming-Sheng Chen Light-emitting diode chip

Also Published As

Publication number Publication date
JP5511813B2 (ja) 2014-06-04
WO2010009690A1 (de) 2010-01-28
DE102008034560A1 (de) 2010-02-04
US8710537B2 (en) 2014-04-29
EP3128555B1 (de) 2021-08-18
CN101971344A (zh) 2011-02-09
EP3128555A1 (de) 2017-02-08
KR101710849B1 (ko) 2017-02-27
CN101971344B (zh) 2012-10-17
EP2304799A1 (de) 2011-04-06
EP2304799B1 (de) 2016-10-26
JP2011528855A (ja) 2011-11-24
US20120018763A1 (en) 2012-01-26
KR101632082B1 (ko) 2016-06-20
KR20160075810A (ko) 2016-06-29
KR20110031897A (ko) 2011-03-29

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