KR101706844B1 - 포토마스크의 제조 방법 및 포토마스크 기판 - Google Patents

포토마스크의 제조 방법 및 포토마스크 기판 Download PDF

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Publication number
KR101706844B1
KR101706844B1 KR1020150047535A KR20150047535A KR101706844B1 KR 101706844 B1 KR101706844 B1 KR 101706844B1 KR 1020150047535 A KR1020150047535 A KR 1020150047535A KR 20150047535 A KR20150047535 A KR 20150047535A KR 101706844 B1 KR101706844 B1 KR 101706844B1
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South Korea
Prior art keywords
film
thin film
pattern
optical film
etching
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Korean (ko)
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KR20150130909A (ko
Inventor
요시히로 우메다
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G03F1/08—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H01L21/0274—
    • H01L21/0337—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020150047535A 2014-05-14 2015-04-03 포토마스크의 제조 방법 및 포토마스크 기판 Active KR101706844B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014100942A JP6298354B2 (ja) 2014-05-14 2014-05-14 フォトマスクの製造方法及びフォトマスク基板
JPJP-P-2014-100942 2014-05-14

Related Child Applications (1)

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KR1020170002311A Division KR101898796B1 (ko) 2014-05-14 2017-01-06 포토마스크의 제조 방법 및 포토마스크 기판

Publications (2)

Publication Number Publication Date
KR20150130909A KR20150130909A (ko) 2015-11-24
KR101706844B1 true KR101706844B1 (ko) 2017-02-14

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KR1020150047535A Active KR101706844B1 (ko) 2014-05-14 2015-04-03 포토마스크의 제조 방법 및 포토마스크 기판
KR1020170002311A Active KR101898796B1 (ko) 2014-05-14 2017-01-06 포토마스크의 제조 방법 및 포토마스크 기판

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Country Status (4)

Country Link
JP (1) JP6298354B2 (https=)
KR (2) KR101706844B1 (https=)
CN (1) CN105093819B (https=)
TW (1) TWI572976B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803172B2 (ja) * 2016-08-19 2020-12-23 株式会社エスケーエレクトロニクス フォトマスクブランクス、それを用いたフォトマスクおよびフォトマスクの製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
KR102223816B1 (ko) 2018-11-13 2021-03-05 정문성 쉐도우 마스크의 제조방법 및 이 제조방법에 의해 제조된 쉐도우 마스크

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241065A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2010169750A (ja) 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
KR101032705B1 (ko) * 2010-11-16 2011-06-02 주식회사 에스앤에스텍 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크

Family Cites Families (18)

* Cited by examiner, † Cited by third party
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JPS60118839A (ja) * 1983-11-30 1985-06-26 Hoya Corp フォトマスクの製造方法
JPS60118839U (ja) * 1984-01-19 1985-08-10 星電器製造株式会社 キ−スイツチ
JP3485071B2 (ja) 1990-12-26 2004-01-13 株式会社ニコン フォトマスク及び製造方法
KR100280035B1 (ko) * 1992-11-27 2001-03-02 기타지마 요시토시 위상쉬프트 포토마스크
JPH08106152A (ja) * 1994-10-06 1996-04-23 Fujitsu Ltd フォトマスク及びその作製方法
JP3037941B2 (ja) * 1997-12-19 2000-05-08 ホーヤ株式会社 ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
JP2001203424A (ja) * 2000-01-18 2001-07-27 Sharp Corp 半導体素子の製造方法
TW502132B (en) * 2000-08-30 2002-09-11 Toshiba Corp Method for producing photomask
CN1216285C (zh) * 2001-08-10 2005-08-24 Hoya株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置
EP2317383A3 (en) * 2002-04-11 2011-12-28 HOYA Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP2010169749A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、表示デバイスの製造方法、及びフォトマスク基板処理装置
WO2012014904A1 (ja) * 2010-07-27 2012-02-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP5900773B2 (ja) * 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
KR101172698B1 (ko) * 2011-10-17 2012-09-13 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조방법
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241065A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2010169750A (ja) 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
KR101032705B1 (ko) * 2010-11-16 2011-06-02 주식회사 에스앤에스텍 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크

Also Published As

Publication number Publication date
KR101898796B1 (ko) 2018-09-13
KR20170007705A (ko) 2017-01-19
TW201543142A (zh) 2015-11-16
CN105093819A (zh) 2015-11-25
JP6298354B2 (ja) 2018-03-20
JP2015219290A (ja) 2015-12-07
KR20150130909A (ko) 2015-11-24
TWI572976B (zh) 2017-03-01
CN105093819B (zh) 2019-05-10

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