CN105093819B - 光掩模的制造方法以及光掩模基板 - Google Patents

光掩模的制造方法以及光掩模基板 Download PDF

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Publication number
CN105093819B
CN105093819B CN201510184218.1A CN201510184218A CN105093819B CN 105093819 B CN105093819 B CN 105093819B CN 201510184218 A CN201510184218 A CN 201510184218A CN 105093819 B CN105093819 B CN 105093819B
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CN
China
Prior art keywords
film
pattern
optical film
photomask
etching
Prior art date
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CN201510184218.1A
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English (en)
Chinese (zh)
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CN105093819A (zh
Inventor
梅田佳宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
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Hoya Corp
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Publication of CN105093819A publication Critical patent/CN105093819A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN201510184218.1A 2014-05-14 2015-04-17 光掩模的制造方法以及光掩模基板 Active CN105093819B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-100942 2014-05-14
JP2014100942A JP6298354B2 (ja) 2014-05-14 2014-05-14 フォトマスクの製造方法及びフォトマスク基板

Publications (2)

Publication Number Publication Date
CN105093819A CN105093819A (zh) 2015-11-25
CN105093819B true CN105093819B (zh) 2019-05-10

Family

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CN201510184218.1A Active CN105093819B (zh) 2014-05-14 2015-04-17 光掩模的制造方法以及光掩模基板

Country Status (4)

Country Link
JP (1) JP6298354B2 (https=)
KR (2) KR101706844B1 (https=)
CN (1) CN105093819B (https=)
TW (1) TWI572976B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803172B2 (ja) * 2016-08-19 2020-12-23 株式会社エスケーエレクトロニクス フォトマスクブランクス、それを用いたフォトマスクおよびフォトマスクの製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
KR102223816B1 (ko) 2018-11-13 2021-03-05 정문성 쉐도우 마스크의 제조방법 및 이 제조방법에 의해 제조된 쉐도우 마스크

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118839U (ja) * 1984-01-19 1985-08-10 星電器製造株式会社 キ−スイツチ
US5387485A (en) * 1992-11-27 1995-02-07 Dai Nippon Printing Co., Ltd. Phase shift photomask
JPH08106152A (ja) * 1994-10-06 1996-04-23 Fujitsu Ltd フォトマスク及びその作製方法
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
CN1356592A (zh) * 2000-08-30 2002-07-03 株式会社东芝 光掩模的制造方法
CN1401993A (zh) * 2001-08-10 2003-03-12 保谷株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118839A (ja) * 1983-11-30 1985-06-26 Hoya Corp フォトマスクの製造方法
JP3485071B2 (ja) 1990-12-26 2004-01-13 株式会社ニコン フォトマスク及び製造方法
JP3037941B2 (ja) * 1997-12-19 2000-05-08 ホーヤ株式会社 ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
JP2001203424A (ja) * 2000-01-18 2001-07-27 Sharp Corp 半導体素子の製造方法
EP2317383A3 (en) * 2002-04-11 2011-12-28 HOYA Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP2010169749A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、表示デバイスの製造方法、及びフォトマスク基板処理装置
JP2010169750A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
WO2012014904A1 (ja) * 2010-07-27 2012-02-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP5900773B2 (ja) * 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
KR101032705B1 (ko) * 2010-11-16 2011-06-02 주식회사 에스앤에스텍 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
KR101172698B1 (ko) * 2011-10-17 2012-09-13 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조방법
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118839U (ja) * 1984-01-19 1985-08-10 星電器製造株式会社 キ−スイツチ
US5387485A (en) * 1992-11-27 1995-02-07 Dai Nippon Printing Co., Ltd. Phase shift photomask
JPH08106152A (ja) * 1994-10-06 1996-04-23 Fujitsu Ltd フォトマスク及びその作製方法
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
CN1356592A (zh) * 2000-08-30 2002-07-03 株式会社东芝 光掩模的制造方法
CN1401993A (zh) * 2001-08-10 2003-03-12 保谷株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置

Also Published As

Publication number Publication date
KR101898796B1 (ko) 2018-09-13
KR20170007705A (ko) 2017-01-19
TW201543142A (zh) 2015-11-16
CN105093819A (zh) 2015-11-25
JP6298354B2 (ja) 2018-03-20
JP2015219290A (ja) 2015-12-07
KR20150130909A (ko) 2015-11-24
KR101706844B1 (ko) 2017-02-14
TWI572976B (zh) 2017-03-01

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