TWI572976B - 光罩之製造方法及光罩基板 - Google Patents

光罩之製造方法及光罩基板 Download PDF

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Publication number
TWI572976B
TWI572976B TW104109043A TW104109043A TWI572976B TW I572976 B TWI572976 B TW I572976B TW 104109043 A TW104109043 A TW 104109043A TW 104109043 A TW104109043 A TW 104109043A TW I572976 B TWI572976 B TW I572976B
Authority
TW
Taiwan
Prior art keywords
film
pattern
optical film
photomask
etching
Prior art date
Application number
TW104109043A
Other languages
English (en)
Chinese (zh)
Other versions
TW201543142A (zh
Inventor
梅田佳宏
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201543142A publication Critical patent/TW201543142A/zh
Application granted granted Critical
Publication of TWI572976B publication Critical patent/TWI572976B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW104109043A 2014-05-14 2015-03-20 光罩之製造方法及光罩基板 TWI572976B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014100942A JP6298354B2 (ja) 2014-05-14 2014-05-14 フォトマスクの製造方法及びフォトマスク基板

Publications (2)

Publication Number Publication Date
TW201543142A TW201543142A (zh) 2015-11-16
TWI572976B true TWI572976B (zh) 2017-03-01

Family

ID=54574567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109043A TWI572976B (zh) 2014-05-14 2015-03-20 光罩之製造方法及光罩基板

Country Status (4)

Country Link
JP (1) JP6298354B2 (https=)
KR (2) KR101706844B1 (https=)
CN (1) CN105093819B (https=)
TW (1) TWI572976B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803172B2 (ja) * 2016-08-19 2020-12-23 株式会社エスケーエレクトロニクス フォトマスクブランクス、それを用いたフォトマスクおよびフォトマスクの製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
KR102223816B1 (ko) 2018-11-13 2021-03-05 정문성 쉐도우 마스크의 제조방법 및 이 제조방법에 의해 제조된 쉐도우 마스크

Citations (3)

* Cited by examiner, † Cited by third party
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US20050208389A1 (en) * 2002-04-11 2005-09-22 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
TW200848918A (en) * 2007-03-30 2008-12-16 Hoya Corp Photomask blank and photomask
TW201211674A (en) * 2010-07-27 2012-03-16 Asahi Glass Co Ltd Substrate provided with reflecting layer for euv lithography, and reflective mask blank for euv lithography

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JPS60118839A (ja) * 1983-11-30 1985-06-26 Hoya Corp フォトマスクの製造方法
JPS60118839U (ja) * 1984-01-19 1985-08-10 星電器製造株式会社 キ−スイツチ
JP3485071B2 (ja) 1990-12-26 2004-01-13 株式会社ニコン フォトマスク及び製造方法
KR100280035B1 (ko) * 1992-11-27 2001-03-02 기타지마 요시토시 위상쉬프트 포토마스크
JPH08106152A (ja) * 1994-10-06 1996-04-23 Fujitsu Ltd フォトマスク及びその作製方法
JP3037941B2 (ja) * 1997-12-19 2000-05-08 ホーヤ株式会社 ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
JP2001203424A (ja) * 2000-01-18 2001-07-27 Sharp Corp 半導体素子の製造方法
TW502132B (en) * 2000-08-30 2002-09-11 Toshiba Corp Method for producing photomask
CN1216285C (zh) * 2001-08-10 2005-08-24 Hoya株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2010169749A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、表示デバイスの製造方法、及びフォトマスク基板処理装置
JP2010169750A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
JP5900773B2 (ja) * 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
KR101032705B1 (ko) * 2010-11-16 2011-06-02 주식회사 에스앤에스텍 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
KR101172698B1 (ko) * 2011-10-17 2012-09-13 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조방법
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050208389A1 (en) * 2002-04-11 2005-09-22 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
US20080248409A1 (en) * 2002-04-11 2008-10-09 Hoya Corporation Reflective Mask Blank, Reflective Mask and Methods of Producing the Mask Blank and the Mask
TW200848918A (en) * 2007-03-30 2008-12-16 Hoya Corp Photomask blank and photomask
TW201211674A (en) * 2010-07-27 2012-03-16 Asahi Glass Co Ltd Substrate provided with reflecting layer for euv lithography, and reflective mask blank for euv lithography

Also Published As

Publication number Publication date
KR101898796B1 (ko) 2018-09-13
KR20170007705A (ko) 2017-01-19
TW201543142A (zh) 2015-11-16
CN105093819A (zh) 2015-11-25
JP6298354B2 (ja) 2018-03-20
JP2015219290A (ja) 2015-12-07
KR20150130909A (ko) 2015-11-24
KR101706844B1 (ko) 2017-02-14
CN105093819B (zh) 2019-05-10

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