KR101705380B1 - 국소 노광 방법 및 국소 노광 장치 - Google Patents

국소 노광 방법 및 국소 노광 장치 Download PDF

Info

Publication number
KR101705380B1
KR101705380B1 KR1020110139009A KR20110139009A KR101705380B1 KR 101705380 B1 KR101705380 B1 KR 101705380B1 KR 1020110139009 A KR1020110139009 A KR 1020110139009A KR 20110139009 A KR20110139009 A KR 20110139009A KR 101705380 B1 KR101705380 B1 KR 101705380B1
Authority
KR
South Korea
Prior art keywords
substrate
light emitting
emitting elements
illuminance
light
Prior art date
Application number
KR1020110139009A
Other languages
English (en)
Korean (ko)
Other versions
KR20120071347A (ko
Inventor
후미히꼬 이께다
히까루 구보따
고오따로오 오노우에
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20120071347A publication Critical patent/KR20120071347A/ko
Application granted granted Critical
Publication of KR101705380B1 publication Critical patent/KR101705380B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020110139009A 2010-12-22 2011-12-21 국소 노광 방법 및 국소 노광 장치 KR101705380B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-285641 2010-12-22
JP2010285641A JP5470236B2 (ja) 2010-12-22 2010-12-22 局所露光方法及び局所露光装置

Publications (2)

Publication Number Publication Date
KR20120071347A KR20120071347A (ko) 2012-07-02
KR101705380B1 true KR101705380B1 (ko) 2017-02-09

Family

ID=46317636

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110139009A KR101705380B1 (ko) 2010-12-22 2011-12-21 국소 노광 방법 및 국소 노광 장치

Country Status (6)

Country Link
US (1) US8691481B2 (zh)
JP (1) JP5470236B2 (zh)
KR (1) KR101705380B1 (zh)
CN (1) CN102566307B (zh)
SG (1) SG182109A1 (zh)
TW (1) TWI495959B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5165731B2 (ja) * 2010-06-30 2013-03-21 東京エレクトロン株式会社 局所露光装置及び局所露光方法
DE102012008638A1 (de) * 2012-05-02 2013-11-07 Heraeus Noblelight Gmbh Leuchte mit LEDs und Zylinderlinse
JP6206945B2 (ja) * 2013-03-07 2017-10-04 株式会社ブイ・テクノロジー 走査露光装置及び走査露光方法
JP6246673B2 (ja) * 2013-09-09 2017-12-13 東京エレクトロン株式会社 測定装置、基板処理システムおよび測定方法
KR102240655B1 (ko) * 2014-02-13 2021-04-16 삼성디스플레이 주식회사 노광 장치 및 이를 이용한 노광 방법
CN204406005U (zh) * 2015-02-28 2015-06-17 成都京东方光电科技有限公司 光取向设备
JP6405290B2 (ja) * 2015-07-22 2018-10-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
US10558125B2 (en) * 2016-11-17 2020-02-11 Tokyo Electron Limited Exposure apparatus, exposure apparatus adjustment method and storage medium
CN106597758B (zh) * 2017-01-03 2019-09-24 京东方科技集团股份有限公司 用于处理光阻部件的方法和装置
US10503076B1 (en) * 2018-08-29 2019-12-10 Applied Materials, Inc. Reserving spatial light modulator sections to address field non-uniformities
JP6921150B2 (ja) * 2019-07-24 2021-08-18 株式会社Ｓｃｒｅｅｎホールディングス 追加露光装置およびパターン形成方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489425A (en) * 1987-09-30 1989-04-03 Toshiba Corp Pattern forming method
JPH01262622A (ja) * 1988-04-13 1989-10-19 Mitsubishi Electric Corp 微細パターンの形成方法
JPH02103054A (ja) * 1988-10-12 1990-04-16 Matsushita Electron Corp パターン形成方法
JPH02118576A (ja) * 1988-10-28 1990-05-02 Nippon Telegr & Teleph Corp <Ntt> レジストパターン形成方法
JPH05190448A (ja) * 1992-01-16 1993-07-30 Nikon Corp 周辺露光装置
JPH0697024A (ja) * 1992-09-11 1994-04-08 Sharp Corp レジストパターンの形成方法
JP3342828B2 (ja) * 1997-01-30 2002-11-11 東京エレクトロン株式会社 レジスト塗布現像装置とレジスト塗布現像方法
JP3211079B2 (ja) * 1997-11-20 2001-09-25 株式会社オーク製作所 周辺露光装置およびその方法
JP2003149826A (ja) * 2001-11-16 2003-05-21 Pentax Corp 露光装置、及び露光方法
JP3952262B2 (ja) * 2001-11-19 2007-08-01 株式会社オーク製作所 露光装置用光源システム
JP2003156853A (ja) * 2001-11-20 2003-05-30 Pentax Corp 露光装置および露光方法
JP2004119570A (ja) * 2002-09-25 2004-04-15 Sharp Corp 露光量設定方法、露光方法およびこれを用いた露光装置
JP4124448B2 (ja) * 2003-03-17 2008-07-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP4376693B2 (ja) * 2004-04-30 2009-12-02 富士フイルム株式会社 露光方法および装置
JP4361887B2 (ja) * 2005-03-03 2009-11-11 東京エレクトロン株式会社 露光時のフォーカス条件の設定方法，露光時のフォーカス条件の設定装置，プログラム及びプログラムを読み取り可能な記録媒体
JP4495019B2 (ja) * 2005-03-28 2010-06-30 東レエンジニアリング株式会社 周辺露光装置
JP4531690B2 (ja) 2005-12-08 2010-08-25 東京エレクトロン株式会社 加熱処理装置
JP2007163632A (ja) * 2005-12-12 2007-06-28 Hitachi Displays Ltd 表示装置の製造方法および表示装置ならびに露光装置
JP4778834B2 (ja) * 2006-05-24 2011-09-21 富士フイルム株式会社 画像記録方法及び装置
JP2008102241A (ja) * 2006-10-18 2008-05-01 Dainippon Screen Mfg Co Ltd パターン描画装置、パターン描画システムおよびパターン描画方法
JP2009109550A (ja) * 2007-10-26 2009-05-21 Adtec Engineeng Co Ltd 直描露光装置
JP2009246069A (ja) * 2008-03-31 2009-10-22 Dainippon Screen Mfg Co Ltd パターン描画装置およびパターン描画方法
KR101020281B1 (ko) * 2008-06-20 2011-03-07 주식회사 하이닉스반도체 극자외선 리소그라피 마스크의 제조 방법
CN101442617B (zh) * 2008-12-23 2014-01-08 北京中星微电子有限公司 一种分块曝光的方法及其装置
JP5354803B2 (ja) * 2010-06-28 2013-11-27 株式会社ブイ・テクノロジー 露光装置
JP5165731B2 (ja) * 2010-06-30 2013-03-21 東京エレクトロン株式会社 局所露光装置及び局所露光方法

Also Published As

Publication number Publication date
SG182109A1 (en) 2012-07-30
JP2012133163A (ja) 2012-07-12
JP5470236B2 (ja) 2014-04-16
KR20120071347A (ko) 2012-07-02
CN102566307B (zh) 2015-01-21
TW201239544A (en) 2012-10-01
TWI495959B (zh) 2015-08-11
US20120164585A1 (en) 2012-06-28
US8691481B2 (en) 2014-04-08
CN102566307A (zh) 2012-07-11

Similar Documents

Publication Publication Date Title
KR101705380B1 (ko) 국소 노광 방법 및 국소 노광 장치
KR101672559B1 (ko) 국소 노광 장치 및 국소 노광 방법
KR101758392B1 (ko) 국소 노광 장치
KR20130052520A (ko) 노광 장치 및 노광 방법
JP5298236B2 (ja) 局所露光装置及び局所露光方法
TWI778185B (zh) 基板處理裝置、基板處理方法及記錄媒體
TWI506380B (zh) 局部曝光方法及局部曝光裝置
JP4879085B2 (ja) 露光装置
JP5306020B2 (ja) プロキシミティ露光装置、プロキシミティ露光装置の基板移動方法、及び表示用パネル基板の製造方法
JP2010176081A (ja) 露光装置、露光装置の基板搬送方法、及び表示用パネル基板の製造方法
JP2007232890A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2013054270A (ja) プロキシミティ露光装置、プロキシミティ露光装置のギャップ制御方法、及び表示用パネル基板の製造方法
JP2011123103A (ja) プロキシミティ露光装置、プロキシミティ露光装置のギャップ制御方法、及び表示用パネル基板の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant