KR101695111B1 - 단일 기판 시스템 상에 포토레지스트를 스트립핑하는 방법 - Google Patents

단일 기판 시스템 상에 포토레지스트를 스트립핑하는 방법 Download PDF

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Publication number
KR101695111B1
KR101695111B1 KR1020157003337A KR20157003337A KR101695111B1 KR 101695111 B1 KR101695111 B1 KR 101695111B1 KR 1020157003337 A KR1020157003337 A KR 1020157003337A KR 20157003337 A KR20157003337 A KR 20157003337A KR 101695111 B1 KR101695111 B1 KR 101695111B1
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Prior art keywords
substrate
resist
process time
cleaning
range
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Korean (ko)
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KR20150038022A (ko
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이안 제이. 브라운
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도쿄엘렉트론가부시키가이샤
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    • H01L21/02076—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H01L21/67051—
    • H01L21/67057—
    • H01L21/67086—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/30—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020157003337A 2012-07-09 2013-07-09 단일 기판 시스템 상에 포토레지스트를 스트립핑하는 방법 Active KR101695111B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261669663P 2012-07-09 2012-07-09
US61/669,663 2012-07-09
US13/670,381 US9875916B2 (en) 2012-07-09 2012-11-06 Method of stripping photoresist on a single substrate system
US13/670,381 2012-11-06
PCT/US2013/049760 WO2014011657A2 (en) 2012-07-09 2013-07-09 Method of stripping photoresist on a single substrate system

Publications (2)

Publication Number Publication Date
KR20150038022A KR20150038022A (ko) 2015-04-08
KR101695111B1 true KR101695111B1 (ko) 2017-01-10

Family

ID=48808543

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157003337A Active KR101695111B1 (ko) 2012-07-09 2013-07-09 단일 기판 시스템 상에 포토레지스트를 스트립핑하는 방법

Country Status (4)

Country Link
US (1) US9875916B2 (https=)
JP (1) JP6088052B2 (https=)
KR (1) KR101695111B1 (https=)
WO (1) WO2014011657A2 (https=)

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Publication number Priority date Publication date Assignee Title
JP6222817B2 (ja) * 2013-09-10 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US10464107B2 (en) * 2013-10-24 2019-11-05 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
EP3324663B1 (en) * 2015-08-24 2023-01-11 Huawei Technologies Co., Ltd. Device association method and related device
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
US9741585B1 (en) * 2016-04-12 2017-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Reactive radical treatment for polymer removal and workpiece cleaning
JP7421410B2 (ja) * 2020-04-30 2024-01-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、学習用データの生成方法、学習方法、学習装置、学習済モデルの生成方法、および、学習済モデル

Citations (2)

* Cited by examiner, † Cited by third party
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KR100806476B1 (ko) * 2001-10-23 2008-02-21 유겐가이샤 유에무에스 유기 피막의 제거 장치
US20120052687A1 (en) * 2010-09-01 2012-03-01 Arizona Board Of Regents On Behalf Of The University Of Arizona Enhanced stripping of implanted resists

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US3900337A (en) * 1974-04-05 1975-08-19 Ibm Method for stripping layers of organic material
US5269850A (en) * 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
KR100434485B1 (ko) * 1999-10-08 2004-06-05 삼성전자주식회사 포토레지스트 스트립퍼 조성물 및 이를 이용한 포토레지스트 스트립 방법
JP2001118850A (ja) * 1999-10-18 2001-04-27 Nec Corp 半導体装置の製造方法
US6503693B1 (en) * 1999-12-02 2003-01-07 Axcelis Technologies, Inc. UV assisted chemical modification of photoresist
JP2001196348A (ja) * 2000-01-12 2001-07-19 Seiko Epson Corp 有機物の分解方法、および半導体素子の製造方法
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
US20040244818A1 (en) * 2003-05-13 2004-12-09 Fury Michael A. System and method for cleaning of workpieces using supercritical carbon dioxide
TWI377453B (en) * 2003-07-31 2012-11-21 Akrion Technologies Inc Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing
US8530359B2 (en) * 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
JP2005183937A (ja) 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
JP4369325B2 (ja) * 2003-12-26 2009-11-18 東京エレクトロン株式会社 現像装置及び現像処理方法
JP4439956B2 (ja) * 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
US20110061679A1 (en) * 2004-06-17 2011-03-17 Uvtech Systems, Inc. Photoreactive Removal of Ion Implanted Resist
WO2006051585A1 (ja) * 2004-11-10 2006-05-18 Mimasu Semiconductor Industry Co., Ltd. 枚葉式ウェーハ処理装置
US7921859B2 (en) 2004-12-16 2011-04-12 Sematech, Inc. Method and apparatus for an in-situ ultraviolet cleaning tool
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
CN101900956A (zh) 2005-11-23 2010-12-01 Fsi国际公司 从基材上除去材料的方法
DE102006062035B4 (de) 2006-12-29 2013-02-07 Advanced Micro Devices, Inc. Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement
JP5014811B2 (ja) 2007-01-22 2012-08-29 東京エレクトロン株式会社 基板の処理方法
JP2009170554A (ja) 2008-01-11 2009-07-30 Panasonic Corp 半導体装置の製造方法
US20110226280A1 (en) 2008-11-21 2011-09-22 Axcelis Technologies, Inc. Plasma mediated ashing processes
KR20100067814A (ko) * 2008-12-12 2010-06-22 삼성전자주식회사 표시 기판 및 이의 제조 방법
US20100224215A1 (en) * 2009-03-06 2010-09-09 Imec Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning
JP2011228438A (ja) * 2010-04-19 2011-11-10 Panasonic Corp 基板洗浄方法及び基板洗浄装置
KR101665036B1 (ko) * 2010-04-27 2016-10-24 티이엘 에프에스아이, 인코포레이티드 기판 표면 근방의 유체 혼합을 제어하는 마이크로전자 기판의 습식 처리
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing

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KR100806476B1 (ko) * 2001-10-23 2008-02-21 유겐가이샤 유에무에스 유기 피막의 제거 장치
US20120052687A1 (en) * 2010-09-01 2012-03-01 Arizona Board Of Regents On Behalf Of The University Of Arizona Enhanced stripping of implanted resists

Also Published As

Publication number Publication date
WO2014011657A2 (en) 2014-01-16
WO2014011657A3 (en) 2014-11-27
US20140007902A1 (en) 2014-01-09
KR20150038022A (ko) 2015-04-08
US9875916B2 (en) 2018-01-23
JP2015523735A (ja) 2015-08-13
JP6088052B2 (ja) 2017-03-01

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