KR101671205B1 - 대체 제어 게이트 및 추가 플로팅 게이트를 갖는 nvm 비트셀 - Google Patents

대체 제어 게이트 및 추가 플로팅 게이트를 갖는 nvm 비트셀 Download PDF

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KR101671205B1
KR101671205B1 KR1020147004386A KR20147004386A KR101671205B1 KR 101671205 B1 KR101671205 B1 KR 101671205B1 KR 1020147004386 A KR1020147004386 A KR 1020147004386A KR 20147004386 A KR20147004386 A KR 20147004386A KR 101671205 B1 KR101671205 B1 KR 101671205B1
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floating gate
gate
drain
barrier
source
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KR20140051330A (ko
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앤드류 더블유 홀치
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시놉시스, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020147004386A 2011-07-26 2012-07-17 대체 제어 게이트 및 추가 플로팅 게이트를 갖는 nvm 비트셀 Active KR101671205B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/191,223 US8829588B2 (en) 2011-07-26 2011-07-26 NVM bitcell with a replacement control gate and additional floating gate
US13/191,223 2011-07-26
PCT/US2012/047080 WO2013016078A1 (en) 2011-07-26 2012-07-17 Nvm bitcell with a replacement control gate and additional floating gate

Publications (2)

Publication Number Publication Date
KR20140051330A KR20140051330A (ko) 2014-04-30
KR101671205B1 true KR101671205B1 (ko) 2016-11-01

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US (1) US8829588B2 (enExample)
EP (1) EP2737485B1 (enExample)
JP (1) JP5740051B2 (enExample)
KR (1) KR101671205B1 (enExample)
CN (1) CN103782343B (enExample)
TW (1) TWI502688B (enExample)
WO (1) WO2013016078A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8399310B2 (en) 2010-10-29 2013-03-19 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8669158B2 (en) * 2012-01-04 2014-03-11 Mark D. Hall Non-volatile memory (NVM) and logic integration
US8658497B2 (en) * 2012-01-04 2014-02-25 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8906764B2 (en) 2012-01-04 2014-12-09 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8951863B2 (en) 2012-04-06 2015-02-10 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
US8722493B2 (en) 2012-04-09 2014-05-13 Freescale Semiconductor, Inc. Logic transistor and non-volatile memory cell integration
US9087913B2 (en) 2012-04-09 2015-07-21 Freescale Semiconductor, Inc. Integration technique using thermal oxide select gate dielectric for select gate and apartial replacement gate for logic
US8728886B2 (en) 2012-06-08 2014-05-20 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell using a high-k dielectric
US9111865B2 (en) 2012-10-26 2015-08-18 Freescale Semiconductor, Inc. Method of making a logic transistor and a non-volatile memory (NVM) cell
US8716089B1 (en) 2013-03-08 2014-05-06 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
US8741719B1 (en) 2013-03-08 2014-06-03 Freescale Semiconductor, Inc. Integrating formation of a logic transistor and a non-volatile memory cell using a partial replacement gate technique
CN104103640B (zh) * 2013-04-09 2017-02-01 苏州东微半导体有限公司 一种u形沟道的半导体器件及其制造方法
US9006093B2 (en) 2013-06-27 2015-04-14 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high voltage transistor integration
US9520404B2 (en) * 2013-07-30 2016-12-13 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US8871598B1 (en) 2013-07-31 2014-10-28 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US8877585B1 (en) 2013-08-16 2014-11-04 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integration
US9129996B2 (en) 2013-07-31 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell and high-K and metal gate transistor integration
US9082837B2 (en) 2013-08-08 2015-07-14 Freescale Semiconductor, Inc. Nonvolatile memory bitcell with inlaid high k metal select gate
US9252246B2 (en) 2013-08-21 2016-02-02 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic device
US9082650B2 (en) 2013-08-21 2015-07-14 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic structure
US8932925B1 (en) 2013-08-22 2015-01-13 Freescale Semiconductor, Inc. Split-gate non-volatile memory (NVM) cell and device structure integration
US9275864B2 (en) 2013-08-22 2016-03-01 Freescale Semiconductor,Inc. Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates
US9129855B2 (en) 2013-09-30 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US8901632B1 (en) 2013-09-30 2014-12-02 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
US9136129B2 (en) 2013-09-30 2015-09-15 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-last methodology
US9231077B2 (en) 2014-03-03 2016-01-05 Freescale Semiconductor, Inc. Method of making a logic transistor and non-volatile memory (NVM) cell
US9252152B2 (en) 2014-03-28 2016-02-02 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9112056B1 (en) 2014-03-28 2015-08-18 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9472418B2 (en) 2014-03-28 2016-10-18 Freescale Semiconductor, Inc. Method for forming a split-gate device
US9257445B2 (en) 2014-05-30 2016-02-09 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
US9379222B2 (en) 2014-05-30 2016-06-28 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell
US9343314B2 (en) 2014-05-30 2016-05-17 Freescale Semiconductor, Inc. Split gate nanocrystal memory integration
KR102369926B1 (ko) * 2015-04-10 2022-03-04 에스케이하이닉스 주식회사 안티 퓨즈 소자, 안티 퓨즈 어레이 및 그 동작 방법
CN114864590A (zh) 2015-08-24 2022-08-05 蓝枪半导体有限责任公司 存储器元件及其制造方法
US9966382B2 (en) 2016-08-16 2018-05-08 United Microelectronics Corp. Semiconductor structure and method for fabricating the same
CN110690293A (zh) * 2019-10-12 2020-01-14 武汉新芯集成电路制造有限公司 闪存器件及其制造方法
US11508753B2 (en) 2020-02-24 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded ferroelectric FinFET memory device
US11450686B2 (en) * 2020-06-29 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. High density 3D FERAM
TWI737377B (zh) * 2020-07-01 2021-08-21 力晶積成電子製造股份有限公司 半導體結構及其製作方法
US11810982B2 (en) * 2021-08-02 2023-11-07 Globalfoundries Singapore Pte. Ltd. Nonvolatile memory device with a doped region between a source and a drain and integration schemes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353912A (ja) * 2004-06-11 2005-12-22 Renesas Technology Corp 半導体記憶装置
US20060284242A1 (en) * 2005-06-07 2006-12-21 Jo Sang-Youn Non-volatile memory device having floating gate and methods forming the same
US20100252874A1 (en) * 2009-04-06 2010-10-07 Thomas Schulz Memory Device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587432A (en) 1984-08-03 1986-05-06 Applied Materials, Inc. Apparatus for ion implantation
JPH03250669A (ja) * 1990-01-12 1991-11-08 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法
US6069382A (en) * 1998-02-11 2000-05-30 Cypress Semiconductor Corp. Non-volatile memory cell having a high coupling ratio
US6373095B1 (en) * 1998-02-25 2002-04-16 International Business Machines Corporation NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area
US6272050B1 (en) * 1999-05-28 2001-08-07 Vlsi Technology, Inc. Method and apparatus for providing an embedded flash-EEPROM technology
JP3594550B2 (ja) * 2000-11-27 2004-12-02 シャープ株式会社 半導体装置の製造方法
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
US6887758B2 (en) 2002-10-09 2005-05-03 Freescale Semiconductor, Inc. Non-volatile memory device and method for forming
US7154779B2 (en) 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
TWI226683B (en) * 2004-02-10 2005-01-11 Powerchip Semiconductor Corp Method of fabricating a flash memory
US7087950B2 (en) * 2004-04-30 2006-08-08 Infineon Technologies Ag Flash memory cell, flash memory device and manufacturing method thereof
KR100644405B1 (ko) * 2005-03-31 2006-11-10 삼성전자주식회사 불휘발성 메모리 장치의 게이트 구조물 및 이의 제조 방법
KR100674971B1 (ko) * 2005-04-27 2007-01-26 삼성전자주식회사 Ｕ자형 부유 게이트를 가지는 플래시 메모리 제조방법
US7416940B1 (en) * 2006-05-03 2008-08-26 Spansion Llc Methods for fabricating flash memory devices
US7851848B2 (en) 2006-11-01 2010-12-14 Macronix International Co., Ltd. Cylindrical channel charge trapping devices with effectively high coupling ratios
US7939861B2 (en) 2007-02-02 2011-05-10 Synopsys, Inc. Non-volatile memory devices having floating-gates FETs with different source-gate and drain-gate border lengths
JP2009141218A (ja) * 2007-12-07 2009-06-25 Toshiba Corp 半導体装置
KR101274202B1 (ko) * 2007-12-17 2013-06-14 삼성전자주식회사 웰 전위 제어용 콘택을 가지는 ｎａｎｄ 플래시 메모리소자
US8193575B2 (en) * 2008-02-07 2012-06-05 International Business Machines Corporation Flash memory structure with enhanced capacitive coupling coefficient ratio (CCCR) and method for fabrication thereof
KR100972862B1 (ko) * 2008-04-07 2010-07-28 주식회사 하이닉스반도체 불휘발성 메모리 소자의 형성방법
EP2308080A1 (en) * 2008-07-09 2011-04-13 Sandisk Corporation Dielectric cap above floating gate
JP2009060125A (ja) * 2008-10-23 2009-03-19 Toshiba Corp 半導体装置およびその製造方法
US20100227460A1 (en) 2009-03-06 2010-09-09 Eon Silicon Solutions Inc. Method of manufacturing nor flash memory
DE102010002455B4 (de) * 2010-02-26 2017-06-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Nichtflüchtiger Speichertransistor und Verfahren zu dessen Herstellung
US8933500B2 (en) * 2010-09-15 2015-01-13 Aplus Flash Technology, Inc. EEPROM-based, data-oriented combo NVM design
US9029227B2 (en) * 2011-03-01 2015-05-12 Globalfoundries Singapore Pte. Ltd. P-channel flash with enhanced band-to-band tunneling hot electron injection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353912A (ja) * 2004-06-11 2005-12-22 Renesas Technology Corp 半導体記憶装置
US20060284242A1 (en) * 2005-06-07 2006-12-21 Jo Sang-Youn Non-volatile memory device having floating gate and methods forming the same
US20100252874A1 (en) * 2009-04-06 2010-10-07 Thomas Schulz Memory Device

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Publication number Publication date
KR20140051330A (ko) 2014-04-30
US8829588B2 (en) 2014-09-09
EP2737485A4 (en) 2015-02-25
TWI502688B (zh) 2015-10-01
EP2737485A1 (en) 2014-06-04
JP5740051B2 (ja) 2015-06-24
JP2014522114A (ja) 2014-08-28
TW201308522A (zh) 2013-02-16
EP2737485B1 (en) 2021-03-17
US20130026553A1 (en) 2013-01-31
CN103782343B (zh) 2016-11-09
CN103782343A (zh) 2014-05-07
WO2013016078A1 (en) 2013-01-31

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