KR101656745B1 - 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 Download PDF

Info

Publication number
KR101656745B1
KR101656745B1 KR1020140090166A KR20140090166A KR101656745B1 KR 101656745 B1 KR101656745 B1 KR 101656745B1 KR 1020140090166 A KR1020140090166 A KR 1020140090166A KR 20140090166 A KR20140090166 A KR 20140090166A KR 101656745 B1 KR101656745 B1 KR 101656745B1
Authority
KR
South Korea
Prior art keywords
change
intensity
light emission
noise
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020140090166A
Other languages
English (en)
Korean (ko)
Other versions
KR20150010627A (ko
Inventor
마사히토 도가미
다테히토 우스이
고사 히로타
사토미 이노우에
시게루 나카모토
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20150010627A publication Critical patent/KR20150010627A/ko
Application granted granted Critical
Publication of KR101656745B1 publication Critical patent/KR101656745B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020140090166A 2013-07-18 2014-07-17 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 Active KR101656745B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-149020 2013-07-18
JP2013149020A JP6239294B2 (ja) 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理装置の運転方法

Publications (2)

Publication Number Publication Date
KR20150010627A KR20150010627A (ko) 2015-01-28
KR101656745B1 true KR101656745B1 (ko) 2016-09-12

Family

ID=52319558

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140090166A Active KR101656745B1 (ko) 2013-07-18 2014-07-17 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법

Country Status (5)

Country Link
US (2) US9767997B2 (enExample)
JP (1) JP6239294B2 (enExample)
KR (1) KR101656745B1 (enExample)
CN (1) CN104299880B (enExample)
TW (1) TWI564956B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6523732B2 (ja) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6650258B2 (ja) * 2015-12-17 2020-02-19 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
BE1025251B1 (nl) * 2017-05-22 2018-12-18 Soleras Advanced Coatings Bvba Feedback systeem
EP3424433A1 (en) * 2017-07-06 2019-01-09 Koninklijke Philips N.V. Methods and systems for processing an ultrasound image
JP7096079B2 (ja) * 2018-06-15 2022-07-05 キオクシア株式会社 プラズマ処理装置の再生装置
US11239097B2 (en) 2019-02-08 2022-02-01 Hitachi High-Tech Corporation Etching apparatus and etching method and detecting apparatus of film thickness
JP7094377B2 (ja) 2019-12-23 2022-07-01 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理に用いる波長選択方法
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US12381071B2 (en) * 2020-09-17 2025-08-05 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319924A (ja) * 2000-05-12 2001-11-16 Tokyo Ohka Kogyo Co Ltd プラズマ処理の終点検出方法及びその装置
JP2010251813A (ja) * 2003-05-09 2010-11-04 Unaxis Usa Inc 時分割多重プロセスにおける包絡線フォロア終点検出

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238312A (en) * 1979-07-23 1980-12-09 International Business Machines Corporation Sputtering system for optimizing quartz deposition uniformity
JPS6153728A (ja) 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
JPS62165920A (ja) 1986-01-17 1987-07-22 Hitachi Ltd エツチング終点判定装置
JPH0773105B2 (ja) 1987-02-16 1995-08-02 日電アネルバ株式会社 プラズマ処理装置
JPH07114195B2 (ja) 1987-04-13 1995-12-06 株式会社日立製作所 エッチング終点判定方法
JPH0457092A (ja) 1990-06-27 1992-02-24 Kawai Musical Instr Mfg Co Ltd 自動演奏装置
US5664066A (en) * 1992-11-09 1997-09-02 The United States Of America As Represented By The United States Department Of Energy Intelligent system for automatic feature detection and selection or identification
US5841651A (en) * 1992-11-09 1998-11-24 The United States Of America As Represented By The United States Department Of Energy Closed loop adaptive control of spectrum-producing step using neural networks
JP3195695B2 (ja) 1993-08-23 2001-08-06 東京エレクトロン株式会社 プラズマ処理方法
US5565114A (en) 1993-03-04 1996-10-15 Tokyo Electron Limited Method and device for detecting the end point of plasma process
FR2704111B1 (fr) * 1993-04-16 1995-05-24 Sextant Avionique Procédé de détection énergétique de signaux noyés dans du bruit.
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes
JPH1050662A (ja) * 1996-07-29 1998-02-20 Hitachi Ltd 半導体製造方法及び装置及びそれを用いて製造された半導体素子
JP3872879B2 (ja) * 1996-11-11 2007-01-24 東京エレクトロン株式会社 プラズマ処理の終点検出方法およびその装置
US5991525A (en) * 1997-08-22 1999-11-23 Voyan Technology Method for real-time nonlinear system state estimation and control
JP2000012527A (ja) * 1998-06-25 2000-01-14 Sumitomo Metal Ind Ltd エッチング終点判定方法及びエッチング終点判定装置
JP3383236B2 (ja) 1998-12-01 2003-03-04 株式会社日立製作所 エッチング終点判定方法及びエッチング終点判定装置
JP3116949B2 (ja) * 1999-01-22 2000-12-11 日本電気株式会社 加工プロセス終了点実時間判定方法
US6609947B1 (en) * 2000-08-30 2003-08-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates
US6447369B1 (en) * 2000-08-30 2002-09-10 Micron Technology, Inc. Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
GB0026868D0 (en) * 2000-11-03 2000-12-20 Isis Innovation Control of deposition and other processes
TWI246725B (en) * 2002-10-31 2006-01-01 Tokyo Electron Ltd Method and apparatus for detecting endpoint
US7158851B2 (en) * 2003-06-30 2007-01-02 Tokyo Electron Limited Feedforward, feedback wafer to wafer control method for an etch process
KR100578135B1 (ko) * 2003-12-19 2006-05-10 삼성전자주식회사 식각 중단점을 결정하는 방법
US7328418B2 (en) * 2005-02-01 2008-02-05 Tokyo Electron Limited Iso/nested control for soft mask processing
US7723120B2 (en) * 2005-10-26 2010-05-25 General Electric Company Optical sensor array system and method for parallel processing of chemical and biochemical information
US7567700B2 (en) * 2006-03-28 2009-07-28 Tokyo Electron Limited Dynamic metrology sampling with wafer uniformity control
US20070238201A1 (en) * 2006-03-28 2007-10-11 Merritt Funk Dynamic metrology sampling with wafer uniformity control
US7502709B2 (en) * 2006-03-28 2009-03-10 Tokyo Electron, Ltd. Dynamic metrology sampling for a dual damascene process
US7623978B2 (en) * 2006-03-30 2009-11-24 Tokyo Electron Limited Damage assessment of a wafer using optical metrology
US7619731B2 (en) * 2006-03-30 2009-11-17 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US8284401B2 (en) * 2007-07-10 2012-10-09 Nanolambda, Inc. Digital filter spectrum sensor
US20090089024A1 (en) * 2007-09-28 2009-04-02 Chung-Ho Huang Methods and arrangement for creating models for fine-tuning recipes
US7967995B2 (en) * 2008-03-31 2011-06-28 Tokyo Electron Limited Multi-layer/multi-input/multi-output (MLMIMO) models and method for using
CN101801839B (zh) 2008-04-03 2012-12-19 Snu研发业务基金会 导电纳米膜及使用该导电纳米膜的微机电系统传感器
US8019458B2 (en) * 2008-08-06 2011-09-13 Tokyo Electron Limited Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures
US7894927B2 (en) * 2008-08-06 2011-02-22 Tokyo Electron Limited Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models for metal-gate structures
JP5383265B2 (ja) 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP5458693B2 (ja) 2009-06-26 2014-04-02 凸版印刷株式会社 終点検出装置
EP2465050A4 (en) * 2009-09-03 2014-01-29 Wallace E Larimore METHOD AND SYSTEM FOR THE EMPIRICAL MODELING OF NONLINEAR SYSTEMS WITH TIME AND PARAMETER VARIATIONS THROUGH REPEATED LINEAR SURFACE CALCULATION
US8877080B2 (en) * 2010-10-18 2014-11-04 Tokyo Electron Limited Using vacuum ultra-violet (VUV) data in microwave sources
US8501499B2 (en) * 2011-03-28 2013-08-06 Tokyo Electron Limited Adaptive recipe selector
US8532796B2 (en) * 2011-03-31 2013-09-10 Tokyo Electron Limited Contact processing using multi-input/multi-output (MIMO) models
US20130246006A1 (en) * 2012-03-13 2013-09-19 King Fahd University Of Petroleum And Minerals Method for kalman filter state estimation in bilinear systems
JP6002487B2 (ja) 2012-07-20 2016-10-05 株式会社日立ハイテクノロジーズ 分析方法、分析装置、及びエッチング処理システム
US10043224B2 (en) * 2012-08-10 2018-08-07 Itron, Inc. Unified framework for electrical load forecasting
JP6088867B2 (ja) 2013-03-15 2017-03-01 株式会社日立ハイテクノロジーズ プラズマ処理装置及び分析装置
WO2014176436A1 (en) * 2013-04-24 2014-10-30 The General Hospital Corporation System and method for estimating high time-frequency resolution eeg spectrograms to monitor patient state
US20140367260A1 (en) * 2013-06-14 2014-12-18 Nanophoretics Llc Method and Apparatus for Identifying Objects in a Plurality of Objects Using Dielectrophoresis
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
US9774613B2 (en) * 2014-12-15 2017-09-26 Sophos Limited Server drift monitoring
US9865439B2 (en) 2015-01-19 2018-01-09 Hitachi High-Technologies Corporation Plasma processing apparatus
JP6553398B2 (ja) * 2015-05-12 2019-07-31 株式会社日立ハイテクノロジーズ プラズマ処理装置、データ処理装置およびデータ処理方法
JP6504915B2 (ja) 2015-05-25 2019-04-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6650258B2 (ja) * 2015-12-17 2020-02-19 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
US20180275621A1 (en) * 2017-03-24 2018-09-27 Mitsubishi Electric Research Laboratories, Inc. Model Predictive Control with Uncertainties
JP7094377B2 (ja) 2019-12-23 2022-07-01 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理に用いる波長選択方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319924A (ja) * 2000-05-12 2001-11-16 Tokyo Ohka Kogyo Co Ltd プラズマ処理の終点検出方法及びその装置
JP2010251813A (ja) * 2003-05-09 2010-11-04 Unaxis Usa Inc 時分割多重プロセスにおける包絡線フォロア終点検出

Also Published As

Publication number Publication date
JP6239294B2 (ja) 2017-11-29
US20150021294A1 (en) 2015-01-22
CN104299880A (zh) 2015-01-21
TW201511128A (zh) 2015-03-16
US11424110B2 (en) 2022-08-23
TWI564956B (zh) 2017-01-01
JP2015023104A (ja) 2015-02-02
US20170372878A1 (en) 2017-12-28
CN104299880B (zh) 2017-11-10
KR20150010627A (ko) 2015-01-28
US9767997B2 (en) 2017-09-19

Similar Documents

Publication Publication Date Title
KR101656745B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법
JP6650258B2 (ja) プラズマ処理装置及びプラズマ処理装置の運転方法
CN104078375B (zh) 等离子处理装置以及等离子处理方法
JP6875224B2 (ja) プラズマ処理装置及び半導体装置製造システム
JP6804694B1 (ja) エッチング処理装置、エッチング処理方法および検出器
JP2011258967A (ja) プラズマ処理装置
JP2016136607A (ja) プラズマ処理方法およびプラズマ処理装置
KR102429079B1 (ko) 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법
US12074076B2 (en) Plasma processing apparatus and plasma processing method
JP6177513B2 (ja) プラズマ処理装置
US12381071B2 (en) Plasma processing method and plasma processing apparatus
JP2005340547A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20140717

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150618

Patent event code: PE09021S01D

AMND Amendment
PE0601 Decision on rejection of patent

Patent event date: 20160331

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20150618

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20160331

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20150918

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20160617

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20160609

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20160331

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20150918

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160906

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160907

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20190819

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20200821

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20210823

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20220819

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20230821

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20240821

Start annual number: 9

End annual number: 9