CN104299880B - 等离子体处理装置及等离子体处理装置的运行方法 - Google Patents

等离子体处理装置及等离子体处理装置的运行方法 Download PDF

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Publication number
CN104299880B
CN104299880B CN201410341799.0A CN201410341799A CN104299880B CN 104299880 B CN104299880 B CN 104299880B CN 201410341799 A CN201410341799 A CN 201410341799A CN 104299880 B CN104299880 B CN 104299880B
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processing
plasma
detector
luminous intensity
noise
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Chinese (zh)
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CN104299880A (zh
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户上真人
臼井建人
广田侯然
井上智己
中元茂
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
CN201410341799.0A 2013-07-18 2014-07-17 等离子体处理装置及等离子体处理装置的运行方法 Active CN104299880B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013149020A JP6239294B2 (ja) 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理装置の運転方法
JP2013-149020 2013-07-18

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CN104299880A CN104299880A (zh) 2015-01-21
CN104299880B true CN104299880B (zh) 2017-11-10

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US (2) US9767997B2 (enExample)
JP (1) JP6239294B2 (enExample)
KR (1) KR101656745B1 (enExample)
CN (1) CN104299880B (enExample)
TW (1) TWI564956B (enExample)

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JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6523732B2 (ja) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6650258B2 (ja) * 2015-12-17 2020-02-19 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
BE1025251B1 (nl) * 2017-05-22 2018-12-18 Soleras Advanced Coatings Bvba Feedback systeem
EP3424433A1 (en) * 2017-07-06 2019-01-09 Koninklijke Philips N.V. Methods and systems for processing an ultrasound image
JP7096079B2 (ja) * 2018-06-15 2022-07-05 キオクシア株式会社 プラズマ処理装置の再生装置
US11239097B2 (en) 2019-02-08 2022-02-01 Hitachi High-Tech Corporation Etching apparatus and etching method and detecting apparatus of film thickness
JP7094377B2 (ja) 2019-12-23 2022-07-01 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理に用いる波長選択方法
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
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Also Published As

Publication number Publication date
JP6239294B2 (ja) 2017-11-29
US20150021294A1 (en) 2015-01-22
CN104299880A (zh) 2015-01-21
KR101656745B1 (ko) 2016-09-12
TW201511128A (zh) 2015-03-16
US11424110B2 (en) 2022-08-23
TWI564956B (zh) 2017-01-01
JP2015023104A (ja) 2015-02-02
US20170372878A1 (en) 2017-12-28
KR20150010627A (ko) 2015-01-28
US9767997B2 (en) 2017-09-19

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