KR101623666B1 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

A substrate processing apparatus for carrying a substrate in a first direction and processing a surface to be processed of the substrate, comprising: a first guide member for guiding the substrate in a first direction; and a second guide member for guiding the substrate guided from the first guide member A tension applying mechanism for applying a tension to the substrate between the first guide member and the second guide member to reduce the dimension of the substrate in the second direction crossing the first direction, And a processing device for processing the surface to be treated of the substrate with the second guide member.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus,

The present invention relates to a substrate processing apparatus and a web substrate transfer apparatus for performing high-precision processing such as patterning on a web substrate such as a film or a sheet. It is another object of the present invention to provide a substrate processing method for performing high-precision machining.

The present application claims priority based on Japanese Patent Application No. 2011-242788 filed on November 4, 2011, the contents of which are incorporated herein by reference.

2. Description of the Related Art As a display device constituting a display device such as a display device, for example, a liquid crystal display device, an organic electro luminescence (organic EL) device, and an electrophoretic device used for electronic paper are known. As a method for manufacturing these devices, a technique called a roll-to-roll method (hereinafter simply referred to as a "roll method") is known (see, for example, Patent Document 1 Reference).

In the roll method, a single sheet-like substrate (web) wound on a roller on a substrate feed side is fed, a substrate is fed while the fed substrate is wound around rollers on a substrate return side, A pattern such as a display circuit or a driver circuit is sequentially formed on a substrate. Recently, a processing apparatus for forming a high-precision pattern has been proposed.

Patent Document 1: International Publication No. 2006/100868

However, in the case of coping with higher precision, it may be insufficient to require only the patterning accuracy (high resolution, lowering of the transfer pattern, etc.) of the processing apparatus.

It is an object of the present invention to provide a substrate processing apparatus capable of high-precision processing, or an apparatus for accurately conveying a web substrate. Another aspect of the present invention is to provide a substrate processing method capable of high-precision processing.

According to a first aspect of the present invention, there is provided a substrate processing apparatus for carrying a substrate formed in a strip shape in a first direction and processing a surface to be processed of the substrate, the substrate processing apparatus comprising: a first guide member for guiding the substrate in a first direction; A second guide member for guiding the substrate guided from the first guide member; a second guide member for applying tension to the substrate between the first guide member and the second guide member, And a processing device for processing the surface to be treated of the substrate between the first guide member and the second guide member.

According to a second aspect of the present invention, there is provided a substrate processing method for transferring a sheet-like long substrate in a long direction and successively forming a predetermined pattern on the substrate, And a step of obtaining information on the degree of shrinkage when the partial region of the substrate is contracted in the width direction orthogonal to the longitudinal direction, And a step of applying tension in the longitudinal direction to the substrate based on information about the degree of contraction.

According to the aspect of the present invention, it is possible to provide a substrate processing apparatus capable of high-precision processing. According to another aspect of the present invention, a substrate processing method capable of high-precision processing can be provided.

Fig. 1 is a schematic diagram showing the overall configuration of a substrate processing apparatus according to the embodiment.
2 is a front view showing a first configuration of the processing apparatus according to the embodiment.
FIG. 3 is a plan view of the first configuration of FIG. 2 as seen from above.
Fig. 4 is a diagram showing the expansion and contraction of the substrate according to the embodiment. Fig.
5 is a graph showing changes in substrate shrinkage by the first simulation.
6 is a graph showing changes in substrate shrinkage by the second simulation.
7 is a graph showing changes in substrate shrinkage by the third simulation.
Fig. 8 is a graph showing conditions of substrate contraction obtained from the simulation result. Fig.
9 is a plan view showing a second configuration of the processing apparatus according to the present embodiment.
10 is a front view showing a third configuration of the processing apparatus according to the present embodiment.
Fig. 11 is a plan view of the third configuration of Fig. 10 as viewed from above.
12 is a diagram showing a fourth configuration of the processing apparatus according to the present embodiment.
13 is a view showing a state of the substrate processed by the fourth structure of Fig.
14 is a plan view showing a fifth configuration of the processing apparatus according to the present embodiment.
15 is a plan view showing a sixth configuration of the processing apparatus according to the present embodiment.
16 is a front view of the sixth configuration of Fig. 15 viewed from the side.

Hereinafter, the present embodiment will be described with reference to the drawings.

1 is a schematic diagram showing the configuration of a substrate processing apparatus 100 according to the embodiment.

1, the substrate processing apparatus 100 includes a substrate supply unit 2 for supplying a strip-shaped substrate (for example, a strip-shaped film member) S, A substrate processing section (pattern forming apparatus) 3 for carrying out processing with respect to the substrate S to be processed (hereinafter referred to as the substrate S), a substrate collecting section 4 for collecting the substrate S and a control section CONT for controlling these sections . The substrate processing section 3 is provided on the surface of the substrate S after the substrate S is fed from the substrate feeding section 2 and the substrate S is collected by the substrate collecting section 4 And executes various processes.

This substrate processing apparatus 100 can be used in the case of forming a display element (electronic device) such as an organic EL element or a liquid crystal display element on a substrate S, for example.

In the present embodiment, an XYZ coordinate system is set as shown in Fig. 1, and an explanation will be given below using this XYZ coordinate system as appropriate. In the XYZ coordinate system, for example, the X axis and the Y axis are set along the horizontal plane, and the Z axis is set upward along the vertical direction. The substrate processing apparatus 100 carries the substrate S from the minus side (-X axis side) to the plus side (+ X axis side) along the X axis as a whole. At this time, the width direction (short-length direction) of the band-shaped substrate S is set in the Y-axis direction.

As the substrate S to be processed in the substrate processing apparatus 100, for example, a foil (foil) such as a resin film or stainless steel can be used. For example, the resin film may be formed of a resin such as polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, A resin or the like can be used.

It is preferable that the substrate S has a small coefficient of thermal expansion so that the dimension does not change even if it receives heat of about 200 캜, for example. For example, an inorganic filler may be mixed with a resin film to reduce the thermal expansion coefficient. Examples of the inorganic filler include titanium oxide, zinc oxide, alumina, silicon oxide and the like. The substrate S may be a single piece of very thin glass having a thickness of about 100 占 퐉 manufactured by a float method or a laminate obtained by bonding the resin film or the aluminum foil to the very thin glass.

The dimension of the substrate S in the width direction (short direction) is, for example, about 1 m to 2 m, and the dimension in the longitudinal direction (long direction) is, for example, 10 m or more . Of course, this dimension is merely an example, and the present invention is not limited thereto. For example, the dimension of the substrate S in the Y-axis direction may be 1 m or less, or 50 cm or less, or 2 m or more. The dimension of the substrate S in the X-axis direction may be 10 m or less.

The substrate S is formed to have flexibility. Here, the flexibility refers to the property that the substrate can be warped without applying shearing force or breaking force to the substrate even when applying a force of about its own weight. Also, the property of flexing by the force of the degree of self weight is included in flexibility. The flexibility varies depending on the material, size, thickness, temperature, etc. of the substrate. As the substrate S, a single strip-shaped substrate may be used, but a plurality of unit substrates may be connected to form a strip.

The substrate feeding section 2 feeds the substrate S wound, for example, in the form of a roll to the substrate processing section 3 for supply. In this case, the substrate supply unit 2 is provided with a shaft portion around which the substrate S is wound, a rotation driving device for rotating the shaft portion, and the like. In addition, a cover portion for covering the substrate S wound, for example, in the form of a roll may be provided.

The substrate feeding section 2 is not limited to the mechanism for feeding the substrate S rolled up in roll form but may be a mechanism for sequentially delivering the band-like substrate S in the longitudinal direction thereof (for example, nip type) drive roller, and the like).

The substrate collecting unit 4 collects the substrate S having passed through the substrate processing apparatus 100, for example, in the form of a roll. Like the substrate supply unit 2, the substrate recovery unit 4 includes a shaft for winding the substrate S, a rotation drive source for rotating the shaft, and a cover unit for covering the recovered substrate S, and the like. When the substrate S is cut into a panel shape in the substrate processing section 3, the substrate S is cut in a state different from the rolled state, for example, May be recovered.

The substrate processing section 3 transports the substrate S supplied from the substrate supply section 2 to the substrate collection section 4 and performs processing on the processed surface Sa of the substrate S in the course of transport I do. The substrate processing section 3 includes a processing apparatus (pattern forming section) 10 for performing a processing process on an object surface Sa of a substrate S and a processing section (Substrate carrying section) 20 including a driving roller R for transferring a recording medium.

The processing apparatus 10 has various apparatuses for forming, for example, an organic EL element with respect to the target surface Sa of the substrate S. Such devices include, for example, a barrier-forming device such as an imprint method for forming barrier ribs on an object side surface Sa, an electrode forming device for forming electrodes, a light-emitting layer forming device for forming a light- .

More specifically, it is possible to use a liquid droplet application device (e.g., an inkjet type application device), a film formation device (e.g., a plating device, a vapor deposition device, a sputtering device, A surface modifying apparatus, and a cleaning apparatus. Each of these devices is suitably provided along the transport path of the substrate S, and a flexible display panel or the like can be produced by a so-called roll-to-roll method. In this embodiment, as the processing apparatus 10, an exposure apparatus is provided, and an apparatus for performing processes before and after the processing (the photosensitive layer forming process, the photosensitive layer developing process, etc.) is also in- line).

The substrate processing section 3 is provided with an alignment camera 5 cooperating with the processing apparatus 10 as an exposure apparatus. The alignment camera 5 detects the alignment mark ALM (see FIG. 3) formed along each of the -Y axis side end and the + Y axis side of the substrate S individually do. The result of detection by the alignment camera 5 is transmitted to the control unit CONT.

Fig. 2 and Fig. 3 are views showing the configuration of a part of the substrate processing section 3 according to the first configuration of the present embodiment. 2 is a front view of the configuration of the substrate processing section 3 according to the first configuration. 3 is a plan view of the configuration of the substrate processing section 3 according to the first configuration.

2 and 3, the substrate processing section 3 includes a first roller 11 (rotating roller), a nip roller 11a (rotating roller), a second roller 12 (rotating roller) A roller 12a (rotating roller), a case 13, and an exposure apparatus EX as a processing apparatus 10.

The first roller 11 is a first guide member (substrate guide member) for guiding the substrate S in the + X axis direction toward the case 13 side. The first roller 11 is provided parallel to the Y axis on the upstream side (-X axis side) with respect to the carrying direction of the substrate S with respect to the case 13, As shown in Fig. The substrate S is sandwiched between the first roller 11 and the nip roller 11a and is supported so as to be transported in the + X axis direction as indicated by the arrow Dx.

The second roller 12 is a second guide member (substrate guide member) for guiding the substrate S from the case 13 to the + X axis side.

The second roller 12 is disposed parallel to the Y axis on the downstream side (+ X axis side) of the substrate S in the carrying direction of the substrate S with respect to the case 13, And is rotatably provided. The substrate S is sandwiched between the second roller 12 and the nip roller 12a and supported to be transported in the + X axis direction as indicated by the arrow Dx.

The case 13 is disposed between the first roller 11 and the second roller 12. The case 13 is formed, for example, in a rectangular parallelepiped shape. The case 13 has a bottom portion 13B and a wall portion 13W. The bottom portion 13B constitutes the end face of the case 13 on the -Z axis side. The wall portion 13W is constituted by a cross section (end face 13Wa) on the -X axis side, an end face 13Wb on the + X axis side, an end face 13Wc on the + Y axis side and an end face 13Wd on the -Y axis side do.

The projection optical system PL is arranged in the case of the projection exposure system and the mask stage MST is arranged in the case of the proximity exposure system on the + Z-axis side of the case 13. [

A substrate stage mechanism (substrate supporting portion) 14 is provided within the containing chamber 13R enclosed by the wall portions 13Wa to 13Wd and the bottom portion 13B for performing a processing operation (exposure in this case) on the substrate S do. An opening 13m through which the substrate S carried in from the first roller 11 passes is formed in the end face 13Wa of the case 13 on the -X axis side. An opening 13n for discharging the substrate S from the accommodating chamber 13R (substrate stage mechanism 14) to the second roller 12 is formed in the end surface 13Wb on the + X axis side of the case 13, Respectively.

On the -Z axis side of the bottom portion 13B, a moving roller 17 is formed. The moving roller 17 is placed on the guide rail 16. The guide rail 16 is supported on a support portion (not shown) of the substrate processing portion 3, for example, a floor of a factory. The guide rails 16 are formed along the X-axis direction (or the Y-axis direction). The case 13 is provided so as to be movable in the X-axis direction (or the Y-axis direction) along the guide rail 16 by a drive mechanism (not shown). The movement of the case 13 by the moving roller 17 and the guide rail 16 is not necessarily required.

A substrate stage mechanism 14 and an alignment camera 18 (corresponding to the alignment camera 5 in Fig. 1) are provided in the accommodating portion 13R. The substrate stage mechanism 14 holds the part of the substrate S between the first roller 11 and the second roller 12 (hereinafter referred to as " inter-roller part Sr " The outer circumferential surface 14a is formed of a pad member (porous air pad or the like) for forming a fluid bearing layer between the outer circumferential surface 14a and the substrate S do.

The substrate stage mechanism 14 is provided with a fluid control section 115 for sucking the ejected fluid while ejecting fluid (air, nitrogen, etc.) from the pad member constituting the outer peripheral surface 14a.

The driving unit 15 including a driving source such as a plurality of motors changes the position and attitude of the substrate stage mechanism 14 (outer circumferential surface 14a) in a small amount. The driving unit 15 mainly changes the Z-, X-, and Y- (Z-axis rotation) and? X (X-axis rotation), respectively. The driving unit 15 synchronously controls the conveyance of the substrate S by the first roller 11 and the second roller 12 under the control of the control unit CONT in Fig. Timing and so on.

The two alignment cameras 18 respectively detect alignment marks ALM formed on both ends of the substrate S in the Y-axis direction (width direction) as shown in Fig. A plurality of alignment marks ALM are formed so as to follow the short side of the + Y side of the substrate S and the short side of the -Y side. The plurality of alignment marks ALM are arranged at equal pitches in the X-axis direction. The alignment camera 18 is directed toward a portion of the substrate S supported by the substrate stage mechanism 14 and is positioned in front of the projection area EA (see FIG. 3) in a slit shape by the exposure apparatus EX -X-axis direction) of the alignment mark ALM. That is, the alignment camera 18 individually detects the alignment mark ALM at a position upstream of the position of the projection area EA with respect to the carrying direction of the substrate S. The result of detection by the alignment camera 18 is transmitted to the control unit CONT.

The alignment camera 18 is a microscope imaging system that receives an image of an alignment mark ALM magnified by a microscope by a solid-state imaging device such as a CCD or CMOS. The observation area on the substrate S of the microscope imaging system is in the range of several tens of micrometers to several hundreds micrometers in the vertical and horizontal directions. Therefore, the alignment mark ALM is formed so as to be reliably observed in such a narrow observation area, for example, a line-shaped pattern having a line width of several mu m to 20 mu m or a plurality of such line- And is formed on the substrate S as an arrayed lattice pattern.

Incidentally, as shown in Fig. 2, the exposure apparatus EX has an illumination unit IL and a mask stage MST. The illumination unit IL irradiates a slit-shaped illumination light (illumination light) toward the substrate S in the -Z-axis direction. The mask stage MST holds a mask M on which a predetermined pattern P is formed. The mask stage MST is provided with a mask holding portion MH capable of holding a mask M having a different dimension. The mask stage MST is movable in the X-axis direction by a driving device (not shown) and moves at a speed synchronized with the transfer speed of the substrate S in the X-axis direction.

The movement of the mask stage MST can be controlled by the control unit CONT. The exposure apparatus EX is an exposure apparatus for projecting an image of an exposure light irradiated from the illumination unit IL and passed through the mask M (in the case of the projection exposure system, (In the case of a proximity exposure method, an image), and a projection area EA (see FIG. 3). In the present embodiment, the shape of the projection area EA is a slit shape elongated in parallel with the ridgeline of the cylindrical outer circumferential face 14a of the substrate stage mechanism 14.

2, after the substrate S is nipped by the first roller 11, the substrate S is wound in a non-contact manner by a predetermined angle of the outer peripheral surface 14a of the substrate stage mechanism 14, 12 and is conveyed as indicated by an arrow Dx. In this embodiment, as shown in Fig. 3, a conveyance is performed to give a tension F in the conveying direction to the substrate S between the first roller 11 and the second roller 12. Fig.

More specifically, the controller CONT controls the rotation speed of the second roller 12 to be slightly higher with respect to the rotation speed of the first roller 11 (the peripheral speed) And controls the motor. In this configuration, the first roller 11 and the second roller 12, a drive motor for precisely controlling the peripheral speed (or torque) of the rollers, and an electric control system ) Corresponds to the tension applying mechanism.

3, the dimension (width) in the Y-axis direction of the substrate S before entering the first roller 11 is set to be smaller than the dimension (width) in the Y- (Width) in the Y-axis direction between the first roller 11 and the second roller 12 is shrunk to become TD1. That is, when the substrate S is pulled by the tension F between the first roller 11 and the second roller 12 which are separated by a distance L (mounting of the substrate S) in the X-axis direction, Is elongated in the X-axis direction and tends to contract in the Y-axis direction.

When the distance L is sufficiently large with respect to the initial width TD0 of the substrate S as shown in Fig. 3, the range from the first roller 11 to the distance As in the + X axis direction and the range from the second roller 12 (The amount of shrinkage in the Y-axis direction (degree of shrinkage) per unit length in the X-axis direction) in the range from the first roller 11 to the distance Ae in front of the first roller 11 A range in which the rate of shrinkage change (degree of shrinkage) remains substantially unchanged is obtained in a range between the range up to the distance As in the axial direction and the range from the second roller 12 to the distance Ae in the -X axis direction It was learned by simulation. Thus, in this embodiment, a stable region in which the rate of shrinkage change in the Y-axis direction of the substrate S is substantially constant (almost zero) is created, and the projection region EA is set in the stable region to perform exposure.

4 is a view for exaggerating the expansion and contraction state of the substrate for the simulation and shows a case where the distance L of the substrate S between the first roller 11 and the second roller 12 nipped is smaller than the distance L S is larger than the initial width TD0. When the substrate S is pulled in the X-axis direction with the tension F, the edges Es1 and Es2 of the substrate S are positioned at the initial stage of the substrate S in the range of the distance As from the first roller 11 in the + The edges Ee1 and Ee2 of the substrate S are deformed to be distanced inward from the width TD0 and in the range from the second roller 12 to the distance Ae in the -X axis direction, And is deformed to return.

In the range of the distance Wx between the range of the distance As in the + X axis direction from the first roller 11 and the range of the distance Ae in the -X axis direction from the second roller 12, the substrate S is almost constant A stable region shrunk by the width TD1 is obtained.

The stable region is determined in accordance with the pattern transfer accuracy (relative magnification error and allowable range of overlap error) in the projection area EA. In the present embodiment, as an example of the simulation, it is assumed that precision exposure in which a fine pattern with a dimension of several micrometers or less is transferred with the dimension of the projection area EA in the Y-axis direction being 80 to 90% of the initial width TD0 of the substrate S, As shown in Fig.

For example, when the initial width TD0 is 300 mm and the dimension in the Y-axis direction in the design area of the projection area EA is 260 mm, when the substrate S is extended by about 50 ppm as a whole by the wet process or the drying process in the previous process , The dimension in the Y-axis direction corresponding to the projection area EA on the substrate S is elongated by 13.0 占 퐉. This value means that a position error (fitting error) of a maximum of 13.0 占 퐉 is caused when the pattern of a few 탆 size is highly precisely positioned and overlapped with each other to expose it, resulting in difficulty in precise exposure processing.

In the case of the PET film, which is a typical web substrate, there is a process that stretches by about 100 ppm. The initial width TD0 and the projection area EA of the substrate S are made large for manufacturing a large display and the dimensions of the projection area EA in the Y axis direction are set to 520 mm (TD0 = 600 mm) If the overall elongation is 100 ppm, the maximum elongation in the Y-axis direction exceeds 50 탆.

In general, the permissible range of the overlapping error and the positional error in the exposure apparatus is a fraction of the pattern size (or line width) to be transferred. Therefore, assuming that the minimum dimension (line width) of the pattern to be transferred is 3 mu m, for example, the allowable range of the overlapping error and the position error is 0.6 mu m. That is, at the actual exposure, it is necessary to set the overlapping error and the position error to 0.6 mu m or less at any point (point) in the Y axis direction in the projection area EA.

Thus, in the present embodiment, the distance L between the two rollers 11 and 12, the initial width TD0 of the substrate S, the thickness t of the substrate, the tension F, the Poisson ratio, (Young's modulus) was varied, and a range satisfying the following two conditions was defined as a stable region.

(1) From the two rollers 11 and 12 toward the center of the substrate S, the amount of shrinkage in the Y-axis direction is calculated at intervals of 30 mm in the X-axis direction, and the change is 0.3 탆 or less (shrinkage change rate is almost zero).

(2) The variation width of the absolute value of the width TD1 of the contracted substrate S is within 1.5 占 퐉 in the entire range in which the variation is 0.3 占 퐉 or less.

These numerical conditions are examples of simulation, and the actual numerical values are appropriately determined depending on the elongation of the substrate S by the process, the minimum dimension of the pattern to be transferred, the tolerance of overlapping error and positional error, and the like.

5 shows a PET film (Poisson's ratio: 0.35, Young's modulus: 4 GPa) having a distance L of the substrate S between two rollers 11 and 12 of 100 cm, an initial width TD0 of 30 cm, (Degree of shrinkage and degree of shrinkage) when the tension F is changed to 20 N, 50 N, 100 N, and 150 N, respectively. The positions 0 cm and 100 cm of the abscissa are nip positions by the first roller 11 and the second roller 12, respectively.

As shown in Fig. 5, the maximum amount of shrinkage varies substantially in proportion to the size of the tension F. Further, the range in which the amount of shrinkage is almost constant, that is, the width of the stable region becomes narrower as the tension F increases. When the tension F is about 20N, nonlinear shrinkage occurs from both ends to about 10 cm, and the width of the stable region is about 80 cm. When the tension F is 150 N, non-linear shrinkage occurs from both ends to about 20 cm, and the width of the stable region is about 60 cm.

6 is different from the case of FIG. 5 only in that the distance L between the two rollers 11 and 12 is narrowed to 40 cm, and the other conditions are the same, to be. The width of the stable region obtained for each tension F is correspondingly narrowed as the distance L is reduced to 40% as compared with the case of Fig. In addition, in the simulation, the range of nonlinear shrinkage on both sides tends to increase as the distance L decreases.

For example, in the case of the tension F of 20N, the range from the ends to 10 cm was nonlinear under the condition of FIG. 5, but in the case of FIG. 6, the range from 14 to 15 cm from both ends was nonlinear.

7 is a graph showing the relationship between the distance L and the thickness t of the substrate S between the two rollers 11 and 12 when the distance L is 100 cm and the thickness t of the substrate S is 100 탆 (Poisson's ratio: 0.35, (Degree of shrinkage and degree of shrinkage) when the initial width TD0 was changed to 40 cm, 60 cm, and 100 cm with the tension F set at 100 N and the initial width TD0 at 40 cm, 60 cm, and 100 cm.

When the initial width is 100 cm (i.e., L = TD0), a stable region satisfying the condition is not obtained, and nonlinear shrinkage is exhibited over the entire distance L. [ As the initial width TD0 decreased to 60cm and 40cm, the stable region appeared. The width Wx1 of the stable region at TD0 = 60 cm is slightly smaller than 30 cm, and the width Wx2 of the stable region at TD0 = 40 cm is about 60 cm.

Simulation was also performed on the difference in Poisson's ratio, Young's modulus and thickness t of the substrate S, but there was no significant difference in appearance of the stable region. From the simulation results shown in Figs. 5 to 7, It was found that the ratio of the distance L to the initial width TD0 is a main factor contributing to the appearance.

8 is a graph showing the relationship between the ratio (TD0 / L) of the initial width TD0 to the distance L between the nips and the width Wx of the stable region with respect to the distance L Wx / L) is plotted on the abscissa, and some of the simulation results are plotted.

The plotted simulation results show a case where the tension F is 100 N, and the line BS connecting 1.0 of the vertical axis and 1.0 of the horizontal axis represents the theoretical boundary, and in the case of a resin web such as a PET film, Appears on the lower left of the line BS and does not appear on the upper right.

Line Sim1 in FIG. 8 represents the average of simulation results obtained when the thickness t is 200 m, the Poisson's ratio is 0.3, and the Young's modulus is 6 GPa, and the line Sim2 shows the average thickness t of 100 m, the Poisson's ratio of 0.4 and the Young's modulus of 4 GPa Is the average of the simulation results obtained. For a typical PET film, the results are generally distributed between the lines Sim1 and Sim2 in the simulation.

However, when the thickness t is extremely thin or any thin film is laminated on the surface, the result may appear on the lower left of the line Sim2, but does not appear on the right side of the boundary line BS.

From the tendency of the simulation result as described above, it is possible to obtain the specifications of the device structure shown in Figs. 2 and 3, for example, the shape of the substrate S in the Y-axis direction required in the projection area EA Since the three-way relationship of the minimum stable region width, the distance L, and the initial width TD0 to be ensured by the tension F can be obtained in advance by knowing the amount of shrinkage (shrinkage percentage, degree of shrinkage) (Distance L) from the first roller 11 to the second roller 12 can be optimized.

Next, a step of manufacturing a display element (electronic device) such as an organic EL element or a liquid crystal display element by using the substrate processing apparatus 100 configured as described above will be described. The substrate processing apparatus 100 manufactures the display element according to control of a recipe (processing conditions, timing, drive parameters, and the like) set in the control unit CONT.

First, a substrate S wound on a roller (not shown) is mounted on the substrate supply unit 2. Then, The control unit CONT rotates a roller (not shown) so that the substrate S is fed from the substrate supply unit 2 from this state. Then, the substrate S having passed through the substrate processing section 3 is wound by a roller (not shown) provided in the substrate recovery section 4. Then,

The control section CONT controls the substrate transfer section 20 to transfer the substrate S from the substrate supply section 2 to the substrate transfer section 20 until the substrate S is fed out from the substrate supply section 2 and then wound up in the substrate return section 4. [ S are appropriately transported in the substrate processing section 3.

The control unit CONT controls the first roller 11 and the nip roller 11a in the case of performing exposure processing using the exposure apparatus EX with respect to the substrate S conveyed in the substrate processing unit 3. [ The portion of the substrate S closer to the -X axis than the first roller 11 is loosened while the substrate S is sandwiched therebetween. The control section CONT controls the position of the substrate S on the + X axis side relative to the second roller 12 of the substrate S while the substrate S is sandwiched between the second roller 12 and the nip roller 12a . By this operation, the tension (tension F) of the portion between the rollers Sr can be adjusted independently of the other portions of the substrate S. [

Thereafter, the control portion CONT applies a predetermined tension to the inter-roller portion Sr by means of the first roller 11, the nip roller 11a, the second roller 12 and the nip roller 12a , And conveys the substrate S in the + X-axis direction at a predetermined conveying speed.

The control unit CONT irradiates exposure light from the illumination unit IL while moving the substrate S and moves the mask stage MST in the + X axis direction. At this time, the control unit CONT synchronizes the moving speed of the mask stage MST and the conveying speed of the substrate S.

With this operation, exposure light that has passed through the mask M is projected onto the projection area EA (see Fig. 3) with respect to the surface Sa of the substrate S moving in the + X axis direction, An image of the pattern P of the mask M is formed on the rear surface Sa by a scanning exposure method.

When performing such an exposure operation, the control unit CONT gives a slight rotation speed difference to the first roller 11 and the second roller 12, thereby obtaining a tension F in the X axis direction necessary for the substrate S The initial width TD0 of the substrate S is contracted so that the dimension in the Y axis direction of the pattern area on the mask M and the dimension of the pattern area to be transferred onto the target surface Sa of the substrate S (Relative magnification error) with respect to the dimension in the Y-axis direction.

In the present embodiment, the projection area EA is a slit-like shape elongated in the Y-axis direction and scanning exposure is performed in the X-axis direction. Therefore, Which is a substantial image area on the image plane. Therefore, the dimension adjustment (shrinkage correction) of the substrate S in the Y-axis direction may be performed at least in the region of the substrate (partial region of the substrate) It is not necessary to adjust the dimension of the substrate S in the Y-axis direction (shrinkage correction).

In the present embodiment, as shown in Fig. 3, since the lower side of the inter-roller portion Sr is supported by the fluid bearing layer on the outer peripheral surface 14a of the substrate stage mechanism 14, there is practically no friction therebetween . Accordingly, the inter-roller portion Sr of the substrate S is elongated in the X-axis direction as the weighting direction, and the initial width TD0 is contracted as TD1 in the Y-axis direction crossing the weighting direction.

3 shows an exaggerated shrinkage in the Y axis direction of the inter-roller portion Sr of the substrate S. The outer circumferential surface 14a of the substrate stage mechanism 14 is formed of a stable region As shown in FIG.

Further, after passing through the second roller 12, the tension F acting on the substrate S is eliminated, so that the substrate S returns to the shape before the application of the tension by elasticity. That is, the substrate S extends in the Y-axis direction from the state of FIG. 3 and contracts in the X-axis direction. Therefore, when the pattern P of the mask M is transferred to the substrate S in a contracted state in the Y-axis direction as shown in Fig. 3 and then the tension F is eliminated, The pattern area (partial area of the substrate) extends in the Y-axis direction at the same rate as the substrate S, and contracts in the X-axis direction.

In the present embodiment, the projection area EA is formed into an elongated slit shape extending in the Y-axis direction, and scanning exposure is performed in the X-axis direction. Therefore, the relative magnification error (scaling error) in the X-axis direction can be synchronized with the original synchronization (synchronization) between the conveying speed Sv of the substrate S in the projection area EA and the moving speed Mv of the mask M ), Sv = k · Mv (where k is 1 for the near exposure system and the projection system for the projection exposure system) to give a slight difference in speed (corresponding to the extension of the substrate S in the X axis direction) .

A pattern area (a partial area of the substrate) composed of a base layer is formed by a wet process (a plating process, an etching process, or the like) on the surface S of the substrate S, The substrate S may be relatively elongated in the wet process.

In such a case, particularly in the conventional proximity exposure method, the pattern area on the mask M and the pattern area (partial area of the substrate) already formed on the substrate S are moved at least in the Y-axis direction ), That is, it is difficult to correct the scaling error in the Y-axis direction.

In this embodiment, a tension in the carrying direction (X-axis direction) is given to the substrate S by the first roller 11 and the second roller 12, The dimension in the Y-axis direction can be contracted to the extent of the elastic deformation, and the correction of the scaling error in the Y-axis direction, which has been difficult, can be realized with a simple structure.

Therefore, the control unit CONT adjusts the amount of shrinkage of the substrate S in the Y-axis direction by changing the size of the tension F applied to the substrate S while securing the stable region, Direction and the dimension in the Y-axis direction of the work surface Sa of the substrate S can be adjusted. Therefore, the relative magnification in the Y-axis direction of the mask pattern image transferred onto the substrate S can be substantially adjusted.

The amount of shrinkage of the substrate S in the Y-axis direction becomes a value corresponding to the tension F in the X-axis direction with respect to the substrate S. Therefore, in the case of controlling the amount of shrinkage of the substrate S in the Y-axis direction, the tension F in the X-axis direction and the tension F in the Y-axis direction with respect to the substrate S by simulation or experiment as shown in FIGS. And the operation of the first roller 11 and the second roller 12 is controlled so that the tension F corresponding to the required amount of shrinkage is applied to the substrate S. [

In carrying out the above operation, the control unit CONT obtains the shrinkage amount (or shrinkage rate, shrinkage degree) of the substrate S as follows. First, the control unit CONT uses the alignment camera 18 to align the alignment mark ALM formed on the end side of the -Y axis side of the substrate S and the alignment mark ALM formed on the end side of the + (ALM). The control unit CONT calculates the distance in the Y-axis direction of the alignment mark ALM based on the detection result of the alignment camera 18 and calculates the distance in the Y-axis direction of the inter- (Width after shrinkage TD1) is calculated. Thereafter, the control unit CONT calculates the shrinkage amount (or shrinkage rate, shrinkage degree) of the substrate S by using the calculation result and the previously recorded distance dimension in the Y-axis direction of the alignment mark ALM .

In the above experiments and simulations, the amount of elongation in the X-axis direction corresponding to the amount of shrinkage of the substrate S in the Y-axis direction is obtained as data, and the moving speed of the mask stage MST, (Scaling error) in the X-axis direction of the mask pattern image (image) can be substantially adjusted by adjusting the conveying speed of the mask S.

When controlling the moving speed of the mask stage MST and the conveying speed of the substrate S, the control unit CONT sets the moving speed of the mask stage MST in the + X-axis direction to Mv, Sv and the scaling error (elongation) in the X-axis direction is A (ppm), the transfer speed (the speed in the peripheral direction of the outer peripheral surface 14a of the substrate stage 14) (1).

Sv = k · Mv · (1 + A) or Sv · (1-A) = k · Mv ... (One)

Where k is 1 for the near exposure system and 1 for the projection exposure system.

The control unit CONT controls the driving unit 15 in Fig. 2 so that the gap and the parallelism between the projection area EA on the substrate S and the mask M are set within a constant range in the case of the proxy- The posture and position of the substrate stage mechanism 14 (outer peripheral surface 14a) are appropriately adjusted.

As described above, according to the present embodiment, in the substrate processing section 3 for processing the surface S to be processed of the substrate S, the first roller 11 and the second roller 12, which carry the substrate S in the X- Since the exposure process can be performed in a state in which the dimension of the substrate S in the Y axis direction is stably contracted with respect to the roller 12, relative magnification (scaling error) can be easily adjusted and patterning with high accuracy can be performed It becomes.

In addition, even when a different apparatus than the exposure apparatus EX is used as the processing apparatus 10, the inter-roller portion Sr of the substrate S on the transfer side for transferring the substrate S, And the range to be processed by the microcomputer can be adjusted.

Examples of the processing apparatus 10 other than the exposure apparatus EX using a mask include a maskless exposure apparatus using an inkjet printer, a DMD or the like, a laser using a laser spot for drawing a laser spot, The present embodiment can be applied to a beam printer or the like as well.

The technical scope of the present invention is not limited to the above-described embodiment, but can be appropriately changed within a range not departing from the gist of the present invention.

For example, in the configurations of Figs. 2 and 3 described above, the alignment camera 18 has only one set in the position in the -X-axis direction of the projection area EA. However, as shown in Fig. 9, a pair of alignment cameras 18a and 18d arranged at positions in the -X-axis direction of the projection area EA and a 1 The alignment cameras 18b and 18e arranged in the projection area EA and the position 1 in the rear of the projection area EA (the position in the + X axis direction or the downstream position in the projection area EA with respect to the transport direction of the substrate S) A total of six alignment cameras (microscope imaging systems), which are the alignment cameras 18c and 18f, may be provided.

As shown in Fig. 9, when a plurality of alignment cameras 18a to 18f are arranged, the local planar deformation (minute deformation in the XY plane) of the substrate S including the projection area EA is corrected It becomes possible to continuously measure in real time every pitch of the mark ALM in the X-axis direction. Therefore, the size of the tension F applied to the substrate S and the size of the substrate stage S are determined so as to reliably determine a slight deformation error and a magnification error of the substrate S in the projection area EA, It is also possible to finely adjust the position and posture of the mechanism 14 in real time.

In this way, even when a plurality of alignment cameras 18a to 18f are arranged, it is preferable that the mark detection position by each camera is contained in the stable region Wx of the substrate S.

As a drive mechanism for driving the mask stage MST of the exposure apparatus EX, a linear motor mechanism LM as shown in Figs. 10 and 11 may be used.

10 and 11 show the structure of a scanning exposure apparatus based on a proximity system. The mask stage MST is precisely driven by a linear motor mechanism LM having a stator LMa and a mover LMb do.

The stator LMa extends along the X-axis direction. A plurality of coils, not shown along the X-axis direction, are arranged in the stator LMa. A pair of stator LMa is provided in the Y-axis direction with a mask stage MST therebetween. The pair of stator LMa has a groove portion on the side of the mask stage MST. The groove portion is formed along the X-axis direction.

The mover LMb is provided on the side of the + Y axis side and the side of the -Y axis side of the mask stage MST, respectively. Each of the mover LMb has a magnet. The mover LMb is inserted into the groove of the corresponding stator LMa. The movable element (LMb) is movable in the X-axis direction along the groove portion. A pair of guide surfaces 13g (13g) for supporting the mask stage (MST) are formed on the upper part of the case (13) so that the movable stage (LMb) moves in the X- ).

The substrate S is set so that the substrate S is conveyed substantially horizontally between the first roller 11 and the second roller 12 and the outer peripheral surface 14a of the substrate stage mechanism 14 configured as a rotary drum 14a Contact with the back surface of the substrate S in a very small area. That is, the width of the projection area EA in the X-axis direction is made very small and the width of the contact area between the outer circumferential surface 14a and the substrate S in the X- To the same extent as the width of

In the present embodiment, the peripheral speed of the outer peripheral surface of the substrate stage mechanism 14 (rotating cylindrical body) is set so that the peripheral speed of the substrate stage mechanism 14 (rotating cylindrical body) And is controlled by the driving unit 15 so as to synchronize with the conveying speed.

In this case, the contact area between the outer peripheral surface 14a of the substrate stage mechanism 14 and the substrate S is a slit-like shape elongated in the Y-axis direction and the width in the X-axis direction is sufficiently narrow. Since the mechanism 14 (rotating cylindrical body) rotates synchronously with the conveying speed of the substrate S, the substrate S is held between the first roller 11 and the second roller 12 in the X- When the tension F is applied, the substrate S contracts in the Y-axis direction as shown in Fig.

Of course, friction occurs in the slit-shaped region where the substrate S and the outer peripheral surface 14a of the substrate stage mechanism 14 are in contact with each other. However, if the width of the region in the X-axis direction is sufficiently small, the substrate S shrinks substantially as shown in Fig. 4 without much effect from the friction.

10 and 11, it is possible to shrink the width (Y-axis direction) of the substrate S by controlling the tension F (X-axis direction) at the time of carrying the substrate S, (In particular, the relative scaling error in the Y-axis direction).

The width of the stable area Wx shown in Figs. 4 and 5 to 8 can be narrowed, and the width of the projection area EA in the X- (Distance L) between the first roller 12 and the second roller 12 can be shortened, so that the entire device can be made compact.

As shown in Fig. 12, a plurality of processing devices may be provided in the X-axis direction. In Fig. 12, processing apparatuses 10A and 10B having the same configuration as the exposure apparatus EX (the apparatuses of Figs. 2 and 3 or the apparatuses of Figs. 10 and 11) described in the above- Respectively. A tension cutoff mechanism (insulating portion) 60 for cutting the tension of the substrate S is provided between the processing apparatus 10A provided with the mask M1 and the processing apparatus 10B provided with the mask M2 Lt; / RTI >

When the substrate S is subjected to the exposure process using the two processing apparatuses 10A and 10B as shown in Fig. 13, the pattern area exposed by the mask M1 of the processing apparatus 10A (A partial area of the substrate) PA and a pattern area (partial area of the substrate) PB exposed by the mask M2 of the processing apparatus 10B are alternately arranged in the X-axis direction 10A and 10B can be subjected to exposure processing at regular intervals.

In this case, for example, it is possible to secure a time from the time when the mask stage MST reciprocating in the X-axis direction moves in the + X-axis direction in the exposure process to the time when the mask stage MST returns in the -X-axis direction.

In addition, in this configuration, the patterns P of the masks M1 and M2 mounted on each of the processing apparatuses 10A and 10B are not necessarily the same. For example, the processing apparatus 10A may expose a 36-inch display panel pattern, and the processing apparatus 10B may expose a 40-inch display panel pattern.

In the above embodiment, the case where the projection area EA has one slit shape is described as an example, but the present invention is not limited to this. For example, a configuration in which a plurality of slit-shaped exposure areas are formed in a plurality of lines in the Y-axis direction, and the exposure areas are alternately shifted in the X-axis direction, or in a so-called zigzag configuration.

In this case, the entirety of a plurality of exposure regions (corresponding to the partial regions of the substrate) arranged in a zigzag pattern is set to be within the stable region Wx defined by the maximum tension F to be considered.

Incidentally, as described above, the configuration of the substrate transport for shrinking the Y-axis direction of the substrate S shown in each of the above embodiments is not limited to the precise patterning such as photo exposure, inkjet printing, laser imaging, electrostatic transfer, And can be applied as a transport mechanism for various kinds of processing apparatuses required. However, from the perspective of mass production, optical exposure using a cylindrical mask is promising.

Fig. 14 is an example of a proximity exposure apparatus in which a transmission type cylindrical mask MD is combined with a substrate transport mechanism according to the embodiments of Figs. 2 and 3 described above.

In Fig. 14, the cylindrical mask MD is a hollow cylinder made of quartz (made of quartz) having a thickness of several milli or more, and a pattern P is formed on the surface of the cylinder. The cylindrical mask MD is held in the apparatus by an air bearing support pad CR or the like, and rotates in the XZ plane about an axis CC extending in the Y axis direction. The rotation speed is set so that the peripheral speed of the outer peripheral surface of the cylindrical mask MD (the surface of the pattern P) is synchronized with the conveyance speed of the substrate S. In the interior of the cylindrical mask MD, an illumination system IL for projecting slit-shaped illumination light that is elongated in the Y-axis direction in the pattern P is disposed.

The substrate S is supported by the supporting surface 14a (convex cylindrical surface) via a base layer (air bearing) 116 by the same substrate stage mechanism 14 as in Fig. 2, The support surface 14a of the substrate stage mechanism (supporting pad 14a) is held so as to maintain a predetermined proximity gap (several tens of microns to several hundreds of microns) on the lower surface of the outer peripheral surface of the substrate S 14) or the position of the cylindrical mask MD in the Z-axis direction is finely adjusted.

In the present embodiment, the substrate stage mechanism 14 includes a gas supply device, a gas supply path, and a plurality of supply ports (supply ports) and the like as a gas layer formation portion.

The transport mechanism of the substrate S is constituted by a non-contact air / turn bar (ATB), a first roller 11, a nip roller 11a, a second roller 12 and a nip roller 12a In this embodiment as well, the substrate S is tensioned in the X-axis direction between the first roller 11 and the second roller 12 to shrink the substrate S in the Y-axis direction. Therefore, the drive motor of each roller is controlled so that the peripheral speed (torque) of the second roller 12 becomes larger by a predetermined amount than the peripheral speed (torque) of the first roller 11.

14, the curvature (radius) of the outer circumferential surface of the cylindrical mask MD does not necessarily match the curvature of the cylindrical support surface 14a of the substrate stage mechanism 14, The curvature of the support surface 14a is determined so as to achieve stable support and conveyance of the substrate S, and the diameter of the cylindrical mask MD is determined according to the size of the display panel to be exposed.

In each of the embodiments described so far, a scanning exposure apparatus using a plane mask M or a cylindrical mask MD as the processing apparatus 10 has been taken as an example. However, the transport mechanism according to the present embodiment can also be applied to an apparatus in which an entire area on a substrate S on which a display panel is formed is temporarily attracted to a planar holder for exposure.

15 and 16 show an example of an apparatus for performing exposure processing by sucking a substrate S onto a plane holder. As shown in the plan view of Fig. 15, a plurality of panel regions (Partial regions of the substrate) PD are formed at regular intervals. The width of the one panel area PD in the X axis direction is within the stable area Wx of the shrinkage of the Y axis direction of the substrate S. In this embodiment, The distance in the X-axis direction (distance L) is set.

In the nonlinear region from the first roller 11 to the distance As in the backward direction (+ X axis direction) of the substrate S and the nonlinear region from the second roller 12 to the distance Ae in the -X axis direction, The panel region PD is arranged with a gap Np (Np> As, Ae) in the X-axis direction so that the region PD is not disposed.

In the present embodiment, when the substrate S is sent in the X-axis direction and the substrate S is positioned in the stable state Wx in a state as shown in Fig. 15, that is, one panel region PD to be exposed or drawn, The driving by the first roller 11 and the second roller 12 is stopped and the conveyance of the substrate S is temporarily stopped.

16, the substrate S is conveyed in the X-axis direction substantially parallel to the flat adsorbing surface of the upper surface of the flat holder 120, between the first roller 11 and the second roller 12 .

In this state, as shown in Fig. 16, the width in the X-axis direction of the plane holder 120 (adsorption face) is set to be included in the stable region Wx, and the entire panel region PD is set to be adsorbed .

When the panel area PD is positioned on the upper surface of the flat holder 120, the base member 113 supporting the flat holder 120 is moved in the Z-axis direction by the driving mechanism 122 in the Z- , And when the back surface of the substrate S uniformly contacts the attracting surface of the flat holder 120, the driving in the Z axis direction is stopped.

The back surface portion corresponding to the panel region PD of the substrate S is temporarily held in the flat holder 120 by vacuum adsorption or electrostatic adsorption. The substrate S is given a tension F in the X-axis direction until just before the adsorption / holding, and the state in which the stable region Wx of the substrate S contracts in the Y-axis direction by a predetermined amount is maintained.

When the entire panel region PD of the substrate S is uniformly attracted to the planar holder 120, it is supported by the guide rails 113g provided at both ends in the Y-axis direction of the base member 113, Y axis direction) moves in a one-dimensional or two-dimensional manner on the panel area PD to perform necessary exposure processing and imaging processing.

As the processing head (HD), a maskless light pattern generator by DMD, a head for an ink jet printer, a small mask pattern projector by a microlens array, a scan by a laser spot Scanning) plotter and the like can be used.

In order to optimally set the gap in the Z-axis direction or the relative inclination between the head surface and the surface of the substrate S, the micrometer order is set in the leg portion 126 for supporting the machining head HD from the base member 113 (a piezo motor, a voice coil motor, or the like) that moves up and down in the Z-axis direction in the micron order, and the positions of the machining heads HD in the X- and Y- It is precisely measured by a laser interferometer (IFM) for measurement (length measurement), or a linear encoder.

An alignment camera 18 for optically detecting a specific pattern shape in the alignment mark ALM and the panel area PD on the substrate S and other alignment sensors can be provided in the processing head HD .

15, the panel area PD on the substrate S is arranged along the clearance (blank) Np in the X-axis direction, but the nip position by the first roller 11 and the nip position by the first roller 11, The distance from the nip position by the two rollers 12 is L and the width in the X-axis direction of the panel area PD is Xpd. If the relationship is given by the following formula (2) Each of the first roller 11 and the second roller 12 is caught on the adjacent panel area PD and does not stop when the conveyance of the first roller 11 and the second roller 12 is temporarily stopped. It is possible to reduce the possibility of leaving an unnecessary defect or the like.

Xpd < L < (Xpd + 2 Np) ... (2)

15 and 16, in the case where the whole of the panel area PD on the substrate S can be sucked precisely in a plane, a large mask covering the entire panel area PD is prepared, May be subjected to a batch static exposure.

In the above embodiments, the exposure process is performed in the stable region Wx shown in Fig. 4 (or Figs. 9 and 15). However, the slit-shaped exposure region (projection region EA) It is also possible to perform exposure in a nonlinear region of the distance As or the distance Ae in Fig. 4, as long as the width in the X-axis direction of the exposure apparatus can be sufficiently narrowed.

In the treatment apparatus (exposure apparatus) shown in Figs. 2, 10, 12, 14 and 15, the first roller 11 (and the nip roller 11a ) And the second roller 12 (and the nip roller 12a) as the second guide member (substrate guide member) are slightly different from each other. However, in the case of the stationary substrate processing apparatus (exposure apparatus) shown in Fig. 15, a tension applied without using the difference in the peripheral speed between the first roller 11 and the second roller 12 Appliances can also be applied.

Specifically, in Fig. 15 and Fig. 16, when the substrate S is conveyed, the first and second rollers 11 and 12 cause the substrate S to have loose tension (for example, 10 to 20 N The panel area PD of the substrate S is positioned in the upper space of the planar holder 120 and is stopped so that the first roller 11 is rotated while maintaining the nip state, A driving system that moves either one of the jaws so that the distance between the pair of the nip rollers 11a and the nip roller 12a by the second roller 12 becomes wider .

15, the substrate S is placed in each of the position immediately after the first roller 11 and the position immediately before the second roller 12 with respect to the carrying direction (+ X axis direction) of the substrate S, Shaped nip member for firmly holding the substrate S therebetween is provided over the entire width in the Y-axis direction of the substrate S, and when the substrate S is positioned and stopped, (Space) Np of the substrate S, and thereafter, a configuration in which one of the nip members is finely moved in the X-axis direction so as to widen the interval in the X-axis direction of the both nip members .

In this case, a drive mechanism for changing the distance in the X-axis direction between the two nip members and both nip members constitutes a tension applying mechanism.

In each of the above embodiments, the alignment mark ALM (for example, a crossbar shape) on the substrate S is detected by using a microscopic image pickup system (alignment camera 5, 18, etc.) . Therefore, when the image of the mark ALM is detected while the substrate S is being transported at a constant speed, the image of the picked-up mark ALM becomes a problem. Therefore, a mark detection system that does not use an image pickup element (camera) such as a CCD or CMOS may be used.

One example is to form a laser beam in a wavelength range where the photosensitivity layer of the substrate S does not have a sensitivity to a slit shape or an interference fringe shape, (S), and diffracted light generated when the diffraction grating-like alignment mark formed on the substrate S traverses the beam of the slit shape or the interference fringe pattern is photoelectrically detected . The position where the diffracted light is generated is obtained by the rollers 11 and 12 for conveying the substrate S or the rotary encoders provided for the rollers 14 in Fig. In the case of the embodiment as shown in Fig. 16, the position where the diffraction light is generated by the interferometer IFM including the mark detection system for photoelectrically detecting diffracted light on the head HD can be obtained.

S ... PCB CONT ... The control unit
Sa ... ALM ... Alignment mark
EX ... Exposure device EA ... Projection area
Sr ... Part between rollers MST ... Mask stage
P ... Pattern M ... Mask
MD ... Cylindrical mask MH ... The mask-
PA, PB ... Pattern area 5 ... Alignment camera
10, 10A, 10B ... The processing device 11 ... The first roller
12 ... The second roller 14 ... The substrate stage mechanism
14a ... The outer circumferential surface 15 ... The driving unit
18 ... Alignment camera Wx ... Stable area

Claims (18)

A substrate processing apparatus for carrying a substrate in a first direction and processing a surface to be processed of the substrate,
A first guide member for guiding the substrate in the first direction,
A second guide member disposed apart from the first guide member and guiding the substrate guided by the first guide member,
A portion where the dimension of the substrate with respect to the second direction intersecting with the first direction is most shrunk between the first guide member and the second guide member and a portion where the shrinkage amount changes are obtained, A tension applying mechanism for applying a tension in the first direction,
And a processing device for processing the surface to be treated of the substrate corresponding to any of the most contracted portion or the portion where the amount of shrinkage varies between the first guide member and the second guide member . The method according to claim 1,
Further comprising a substrate supporting portion for supporting a portion of the substrate conveyed between the first guide member and the second guide member. The method of claim 2,
Wherein the substrate supporting portion is formed in a shape having a cylindrical surface or a convex surface. The method of claim 3,
Wherein the substrate supporting portion is constituted by a rotating cylindrical body. The method of claim 4,
Further comprising a driving unit for rotating the rotating cylindrical body at a peripheral speed corresponding to a conveying speed of the substrate. The method according to any one of claims 2 to 5,
Wherein the substrate supporting section has a substrate layer forming section for forming a substrate layer for supporting the substrate with the substrate. The method according to claim 1,
Further comprising: a detection section for detecting a predetermined reference pattern. The method of claim 7,
Wherein the predetermined reference pattern is provided on the substrate. The method of claim 7,
Wherein the tension imparting mechanism controls a magnitude of a tension applied to the substrate in accordance with a detection result by the detecting section. The method according to any one of claims 7 to 9,
The processing apparatus has an exposure apparatus that irradiates exposure light having passed through a mask onto the substrate,
The exposure apparatus has a mask stage for moving the mask,
And a stage driving unit for moving the mask stage in accordance with the detection result. The method according to any one of claims 7 to 9,
Wherein the detecting section is capable of detecting a reference pattern provided at a plurality of locations. The method according to any one of claims 1 to 5,
The processing apparatus has an exposure apparatus that irradiates exposure light having passed through a mask onto the substrate,
The exposure apparatus has a mask stage for moving the mask,
Wherein the mask stage has a mask holding portion capable of holding a plurality of types of masks having different shapes or dimensions. The method according to any one of claims 1 to 5,
Wherein the first guide member and the second guide member each include a drive roller which is disposed apart from the substrate by a distance L in terms of the transport direction of the substrate and guides the guide roller in frictional contact with the substrate, And applies a tension in the first direction by a roller. The method according to any one of claims 1 to 5,
Wherein the plurality of processing apparatuses are provided in the first direction. A substrate processing method for transferring a long sheet-like substrate in a long direction and sequentially forming a predetermined pattern on the substrate,
Acquiring information about a degree of shrinkage when a partial region of the substrate on which the pattern is formed is contracted in a width direction orthogonal to the longitudinal direction;
And applying a tensile force in the longitudinal direction to the substrate based on information about the degree of the shrinkage between two specific positions between the partial regions of the substrate in the longitudinal direction. 16. The method of claim 15,
Wherein the substrate processing method is carried out in a pattern forming apparatus having a pattern forming section for forming the pattern on the substrate and a substrate carrying section for carrying the substrate in the longitudinal direction with respect to the pattern forming section,
Wherein the pattern forming section forms the pattern in a partial area of the substrate in the step of applying the tension. 18. The method of claim 16,
Wherein the substrate carrying section is provided at each of two specific positions at which the partial area of the substrate is placed in the longitudinal direction and has a substrate guide member for holding the substrate in contact with it,
Wherein the step of applying the tensile force applies tension in the longitudinal direction to the substrate between the two substrate guide members. 18. The method of claim 17,
Wherein each of the two substrate guide members is constituted by a pair of rotating rollers for feeding the substrate in the longitudinal direction by frictional contact, and the step of imparting the tension includes a step of changing the rotational torque of the pair of rotating rollers To the substrate processing apparatus.

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