JP2000075497A - Aligner - Google Patents

Aligner

Info

Publication number
JP2000075497A
JP2000075497A JP10254649A JP25464998A JP2000075497A JP 2000075497 A JP2000075497 A JP 2000075497A JP 10254649 A JP10254649 A JP 10254649A JP 25464998 A JP25464998 A JP 25464998A JP 2000075497 A JP2000075497 A JP 2000075497A
Authority
JP
Japan
Prior art keywords
photomask
exposure
cylindrical
pattern
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10254649A
Other languages
Japanese (ja)
Inventor
Ryoichi Ida
Katsuya Sannomiya
宮 勝 也 三
田 良 一 井
Original Assignee
Adtec Engineeng Co Ltd
株式会社アドテックエンジニアリング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adtec Engineeng Co Ltd, 株式会社アドテックエンジニアリング filed Critical Adtec Engineeng Co Ltd
Priority to JP10254649A priority Critical patent/JP2000075497A/en
Publication of JP2000075497A publication Critical patent/JP2000075497A/en
Application status is Pending legal-status Critical

Links

Abstract

PROBLEM TO BE SOLVED: To provide an aligner capable of realizing consecutive exposure. SOLUTION: A cylindrical photomask 1 is rotated, and a work W is carried in synchronization with the rotation of the photomask 1 and exposed at an exposing position E by an exposing light source 2 provided in the photomask 1. The pattern pitch of a film mask 10 is previously measured and the rotation of a cylindrical body 11 is controlled in according with the pattern pitch.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この発明は、露光装置に関する。 BACKGROUND OF THE INVENTION The present invention relates to an exposure apparatus.

【0002】 [0002]

【従来の技術】プリント回路基板などを作成する際に、 Such as when you create the Background of the printed circuit board,
回路パターン等を描いたフォトマスクを用い、ワーク側に回路パターンを焼き付けて回路基板を作成する方法が普及しており、そのための露光装置が種々使用されている。 Using a photomask depicting a circuit pattern or the like, a method of creating a circuit board by baking the circuit pattern on the workpiece side is spread, the exposure apparatus for have been variously used.

【0003】 [0003]

【発明が解決しようとする課題】上記した従来の露光装置において、例えばフープ材のような長尺の連続的なワークに連続的なパターンを形成する際には、フォトマスクに描かれた或一定のエリア毎に露光とワーク搬送を繰り返しながら全体の露光を行うことになる。 In conventional exposure apparatus described above in which THE INVENTION An object you try solving], for example, in forming a continuous pattern in the continuous work long as hoops are certain constant drawn on the photomask It will perform overall exposure while repeating areas exposed and workpiece transfer for each. しかし、上記した方法による露光の場合、隣同士の露光エリアの境目のパターンの精度に問題が生じる。 However, in the case of exposure by the method described above, a problem with the accuracy of the pattern of the boundary between the exposure area next to each other occurs. 即ち、露光エリアがわずかに重なったり、ギャップが生じた状態で露光が行われることがあり、これがパターンの寸法的な不具合として表れる問題がある。 That, or slightly overlap the exposure area, may exposure in a state in which the gap has occurred is made, this is a problem that appears as dimensional glitch patterns. 隣同士の露光エリアが重ならないよう或いはギャップが生じないように露光する事は従来の装置では不可能であり、この点の改善が望まれていた。 That is, or gaps so that the exposure area next to each other do not overlap exposed so as not to cause is not possible with conventional apparatus, improvement of this point has been desired. 本発明は上記従来技術の欠点を改善することを目的とする。 The present invention aims to remedy the drawbacks of the prior art.

【0004】 [0004]

【課題を解決するための手段】上記目的を達成するために、本発明の露光装置は、円筒状のフォトマスクと、露光対象物を所定方向に搬送する手段と、前記円筒状のフォトマスクを該露光対象物の搬送と同期させて回転させる手段と、前記フォトマスクのパターンピッチに対応して、前記フォトマスクの回転と露光対象物の搬送の中の1又は両方を制御する制御手段と、前記円筒状のフォトマスクを透過して前記露光対象物に光を照射する光源と、を備えたことを特徴とする。 To achieve the above object, according to the Invention The exposure apparatus of the present invention includes a cylindrical photomask, and means for conveying the object to be exposed in a predetermined direction, said cylindrical photomask and means for rotating in synchronization with the conveyance of the exposure object, and a control means corresponding to the pattern pitch of the photo mask, which controls one or both in the transport of the rotation and the exposure object of the photomask, characterized by comprising a light source for irradiating light to the object of exposure is transmitted through the cylindrical photomask. 該円筒状のフォトマスクは、フォトマスク自体を円筒状としても良いし、或いは露光波長透過性の材質で円筒を形成し、該円筒にフィルム状のマスクを張り付ける等種々の態様が可能である。 The cylindrical photomask, to a photomask itself may be cylindrical, or to form a cylinder of a material having an exposure wavelength transparency, and the like are possible, as the various aspects pasting film-like mask on the cylinder . フォトマスクと露光対象物は接触させても良いし、 The photomask and the exposure object may be brought into contact,
或いは非接触でも良い。 Or it may be in a non-contact manner. 該光源は円筒内に設けるのが望ましく、また遮光カバーと光学系を設け、前記円筒状のフォトマスクの側周面内側に向けて円筒長さ方向に平行な線に沿って光を照射する、ように構成することが望ましい。 The light source is desirably provided in the cylinder, also provided a light shielding cover and the optical system, for irradiating light along a line parallel to the cylindrical longitudinally inward side peripheral surface of the cylindrical photomask, it is desirable to configure such. フォトマスクのパターンピッチには種々の理由により誤差が生じ、これを希望の寸法精度に納めることは非常に難しい。 Error occurs for a variety of reasons in the pattern pitch of the photo mask, it is very difficult to fit it to the desired dimensional accuracy. そのため、この発明においては、パターンピッチに対応してフォトマスクの回転或いは露光対象物の搬送を制御するように構成し、この制御によりパターンピッチの誤差を補償するように構成されている。 Therefore, in the present invention, corresponding to the pattern pitch configured to control the conveyance of the rotation or the exposure object photomask, and is configured to compensate for errors in the pattern pitch by this control. 具体的な例として、例えばフォトマスクが円筒体とそこに装着されたフィルムマスクを有する場合、前記フィルムマスクの繋ぎ目におけるパターンピッチに基づいて、該繋ぎ目部分において該フォトマスクの回転制御を行う。 As a specific example, for example, when the photomask has a film mask mounted therein and the cylindrical body, on the basis of the pattern pitch in the joints of the film mask, controls the rotation of the photomask in 該繋 technique th portion .

【0005】 [0005]

【発明の実施の形態】以下本発明の実施の形態を図面に基づいて説明する。 It is described with reference to the embodiment of the DETAILED DESCRIPTION OF THE INVENTION Hereinafter the present invention with reference to the drawings. 図1及び図2において、円筒状フォトマスク1は矢印方向に回転可能になっており、表面に所定のマスクパターンが描かれている。 1 and 2, the cylindrical photomask 1 is is rotatable in the arrow direction, a predetermined mask pattern is drawn on the surface. 円筒状の露光波長透過材にフィルムマスクを張り付けても良い。 A cylindrical exposure wavelength transmission member may be affixed to the film mask. 円筒状フォトマスク1の下側にワークWが矢印方向に搬送されるようになっている。 Workpiece W on the lower side of the cylindrical photomask 1 is adapted to be conveyed in the arrow direction. ワークW表面には感光レジストが塗布されており、円筒状フォトマスク1のマスクパターンに応じて感光されるようになっている。 The workpiece W surface and the photosensitive resist is coated, and is sensitive in accordance with the mask pattern of the cylindrical photomask 1. 円筒状フォトマスク1とワークWとは接触させても良いし、非接触としても良い。 May be contacted to the cylindrical photomask 1 and the workpiece W, may be non-contact. 円筒状フォトマスク1とワークWとは制御装置20、駆動装置21、22から成るサーボ駆動機構により高精度に同期させて駆動されるように構成されている。 Cylindrical photomask 1 and the control device and the workpiece W 20, and is configured to be driven in synchronization with high accuracy by a servo drive mechanism consisting of the driving devices 21 and 22.

【0006】円筒状フォトマスク1の内部には露光光源2が設けられ、露光周波数の光を照射するように構成されている。 [0006] Inside the cylindrical photomask 1 is provided an exposure light source 2, and is configured to irradiate light of the exposure frequency. 露光光源2は円筒状フォトマスク1の回転軸を通る径線上に円筒長さ方向ほぼ全体にわたって設けられている。 The exposure light source 2 is provided over substantially the entire cylindrical length direction on a longitude line passing through the rotation axis of the cylindrical photomask 1. 露光光源2には反射板3が設けられ、露光光源2の下側(ワークW側)に設けられたレンズ6へ光を反射して平行光とするようになっている。 The exposure light source 2 is provided reflecting plate 3, so as to parallel light by reflecting the light to the lens 6 provided on the lower side of the exposure light source 2 (workpiece W side). レンズ6は露光光源2の光路途中に設けられており、円筒状フォトマスク1の円筒長さ方向ほぼ全体にわたって設けられており、円筒長さ方向に所定の面積を有する線条の光を照射するようになっている。 Lens 6 is provided on the way of the light path of the exposure light source 2 is provided over the cylindrical entire length direction substantially cylindrical photomask 1 is irradiated with light of a filament having a predetermined area in the cylindrical length direction It has become way. レンズ6は露光光源2の下側から円筒状フォトマスク1とワークWが接触或いは最も近接する位置の円筒状フォトマスク1内壁側の位置に達するように設けられており、該位置まで露光光源2からの光を伝播するようになっている。 Lens 6 is provided so as to reach the cylindrical photomask 1 of the inner wall position of the cylindrical photomask 1 and the workpiece W from the lower side of the exposure light source 2 is in contact or closest, exposure to the position light source 2 It is adapted to propagate the light from. この位置が露光位置E This position is the exposure position E
となり、この露光位置Eに円筒状フォトマスク1の円筒長さに応じた線条の露光部が形成されるようになっている。 Next, the exposed portions of the filament in accordance with the cylinder length of the cylindrical photomask 1 is adapted to be formed on the exposing position E. レンズ6は円筒状フォトマスク1の内壁に非接触に近接するように構成されている。 Lens 6 is configured so as to approach the non-contact with the inner wall of the cylindrical photomask 1. 遮光カバー4は露光光源2と反射板3を覆い、遮光カバー5はレンズ6を覆うようになっており、露光を露光位置E以外に漏洩させないように構成されている。 Shielding cover 4 covers the reflector 3 as an exposure light source 2, the light-shielding cover 5 is adapted to cover the lens 6, and is configured so as not to leak the exposure in addition to the exposure position E. 遮光カバー5は円筒状フォトマスク1の内壁に出来る限り近接させて非接触とし、ノイズ光の侵入を防ぐと共に円筒状フォトマスク1の回転を阻害しないように構成している。 Shielding cover 5 is not in contact as close as possible to the inner wall of the cylindrical photomask 1, is configured not to inhibit rotation of the cylindrical photomask 1 prevents the entry of noise light.

【0007】円筒状フォトマスク1にはゴミ取りローラ7が接触し、またワークWにはゴミ取りローラ8が接触してゴミ取りを行うようになっている。 [0007] The cylindrical photomask 1 in contact dust removing roller 7, also the workpiece W is adapted to perform up dust in contact with the dust removal roller 8.

【0008】以上の構成において、ワークWは矢印方向に搬送し、これに同期して円筒状フォトマスク1が矢印方向に回転する。 [0008] In the above configuration, the workpiece W is conveyed in the arrow direction, which in synchronism with the cylindrical photomask 1 is rotated in the arrow direction. そして、露光位置Eにおいて露光光源2からの光により線条の露光が行われる。 Then, exposure of the striations is performed by light from the exposure light source 2 at the exposure position E. 円筒状フォトマスク1が1回転した後も連続的に次の回転が行われるから、円筒状フォトマスク1に描かれたマスクパターンを連続的にワークW上に焼き付けることが可能であり、 Since the cylindrical photomask 1 is also rotated continuously follows after one rotation is performed, it is possible to burn drawn mask pattern to a cylindrical photomask 1 continuously on the workpiece W,
パターンとパターンのつなぎ目にギャップや重なりが生ずることがなく、高精度に連続的なパターン形成が可能である。 Pattern and the pattern without gaps or overlap occurs in the joint of, it is possible to continuously pattern formed with high precision.

【0009】なお、上記では、ワークWの片面にのみ露光する装置を説明したが、同一の構成をワークWの表裏に設けてワークWの表裏に同時に露光を行うように構成することも可能である。 [0009] In the above description, apparatus for exposing only one surface of the workpiece W, it is also possible to configure to perform simultaneous exposure to both sides of the workpiece W by providing the same structure on both sides of the workpiece W is there.

【0010】制御装置20にはパターンピッチ入力装置19が接続され、適宜円筒状フォトマスク1のパターンピッチを入力できるようになっている。 [0010] The control unit 20 is connected to the pattern pitch input device 19, it has been able to enter the pattern pitch of the appropriate cylindrical photomask 1. このパターンピッチは予め測定した値でも良いし、或いは自動的にピッチを測定して入力するようにしても良い。 The pattern pitch may be a previously measured value, or may be automatically input by measuring the pitch.

【0011】図3と図4によりパターンピッチの誤差について説明する。 [0011] described error pattern pitch by Figure 3 and Figure 4. 前述したように、円筒状フォトマスク1には露光波長透過材料を使用した円筒の外周に直接パターンを描いたものや、パターンが描かれたフィルムマスクを露光波長透過性の円筒の外周に密着固定したものが使用可能である。 As described above, the cylindrical photomask 1 that depicts the direct pattern on the outer circumference of the cylindrical using exposure wavelength transmissive material and, tightly fixed a film mask having a pattern drawn on the outer periphery of the exposure wavelength permeable cylinder what was is available. ここでは、円筒状フォトマスク1がフィルムマスク10と円筒体11を有し、該円筒体11 Here, the cylindrical photomask 1 having a film mask 10 and the cylindrical body 11, cylindrical body 11
上にフィルムマスク10を装着した場合について説明する。 Description will be given of a case where the film mask 10 is mounted on top. 図示するようにフィルムマスク10を装着する場合、その端部と端部の間で繋ぎ目が発生する。 When mounting the film mask 10 as shown, the joint is produced between the end portion and the end portion. この時、 At this time,
始点付近のパターンと終点付近のパターンの両者のピッチを希望の寸法精度に納めることは非常に困難であり、 Possible to arrange the pitch of both the pattern in the vicinity of the pattern and end in the vicinity of the starting point to the desired dimensional accuracy is very difficult,
このピッチが正確に出来てないと露光対象物への露光パターンは不正確なものとなる。 The pitch is the exposure pattern to the object of exposure not be exactly will be inaccurate. 図3の〜はフィルムマスク10に描かれた各パターンの中心位置を示す。 ~ In FIG. 3 indicates the center position of each pattern drawn in the film mask 10. ここでは円筒体11を半径方向8分割しており、との間に繋ぎ目12が発生する。 This has a cylindrical body 11 radially divided into eight parts, the joint 12 is produced between the. この繋ぎ目12は構造上重ね合わせることができず、通常は空隙となる。 The joint 12 can not be superimposed on the structure, usually a void. 上記した例において、各中心位置を通る半径の角度はθ1からθ In the example above, the radius of the angle through each center position from .theta.1 theta
8まで等角度であることが望ましい。 It is desirable that the equiangular to 8. θ1からθ7間での精度は、フィルムマスク10の作画精度でほぼ決定されるため、図4に示すからまでのピッチは希望の寸法を確保するのが容易である。 Accuracy between θ1 from θ7 is because it is substantially determined by the drawing accuracy of the film mask 10, the pitch between and shown in FIG. 4 is easy to ensure the desired dimensions. しかし、θ8をθ1〜θ However, θ1~θ the θ8
7と同等に合わせるのは非常に困難である。 Equally to match the 7 is very difficult. 何故ならば、〜の累積精度や円筒体11へのフィルムマスク10の密着固定精度或いは円筒体11の外周長さの精度等の各誤差が累積されるからである。 Since the error of the accuracy and the like periphery length of the contact fixing accuracy or cylindrical body 11 of the film mask 10 to the cumulative accuracy and cylindrical body 11 - is because accumulated. そのため、単純に円筒体11とワークWとを同期させて運転させると、ピッチP8が他のピッチPと異なる現象が生じることになる。 Therefore, simply if synchronously be operated with the cylindrical body 11 and the workpiece W, so that the phenomenon that the pitch P8 is different from the other pitches P occurs.

【0012】この実施形態では、パターンピッチ入力装置19を備えており、予めフィルムマスク10を円筒体11に装着した状態でピッチを測定し、これを入力できるように構成されている。 [0012] In this embodiment, provided with a pattern pitch input device 19 is configured to advance the film mask 10 to measure the pitch while wearing the cylindrical body 11, you can enter it. 自動的にピッチ測定を及び入力を行うようにしても良い。 Automatically may be performed Oyobi enter the pitch measurement. 図4ではピッチP8のみ他と異なるので、このピッチだけを入力し、駆動装置21 Since Figure 4 differs in the other only pitch P8, enter this pitch only drive 21
にのθ8分だけ回転させるように制御する。 Controlled to rotate by Nino θ8 minutes. ワークW The workpiece W
は通常通り搬送する。 To transport as usual. このように、フィルムマスク10 In this way, the film mask 10
のパターンピッチを事前に測定し、そのピッチに対応して円筒体11の回転制御を行うことにより、ワークWに正確なピッチの露光が行える。 Of the pattern pitch is measured in advance, by controlling the rotation of the cylindrical body 11 in correspondence with the pitch, allows exposure of the precise pitch workpiece W. そのため、フィルムマスク10を円筒体11に装着する際に精度を気にしなくて良く、操作性が向上する。 Therefore, better not have to worry about the precision when mounting the film mask 10 to the cylinder 11, the operability is improved.

【0013】なお、上記では円筒体11側の回転制御のみを行うようにしているが、ワークWの搬送制御を行っても良い。 [0013] In the above have to perform only rotation control of the cylinder 11 side, but may be carried out conveyance control of the work W. また回転制御と搬送制御を両方行っても良い。 Or it may be performed both conveyance control and rotation control. また、パターンピッチ入力装置19からは予め測定したピッチを入力するようなっているが、露光継続中に露光完成品のピッチ誤差を測定して、制御装置20にフィードバックすることなども可能である。 Further, although it to enter the pitch measured in advance from the pattern pitch input device 19 measures the pitch error of the exposure finished during exposure continues, it is also such that the feedback to the controller 20.

【0014】図5に上記した動作のフローチャートを示す。 [0014] shows a flow chart of the operation described above in FIG. 図中ステップS4とS5は露光完成品のピッチの誤差測定に係るものであって、必ずしも行う必要はない。 Drawing steps S4 and S5 is a one according to the error measurement of the pitch of the exposure finished, is not necessarily performed.

【0015】 [0015]

【発明の効果】以上説明したように本発明の露光装置によれば、パターンの連続的な露光を行え、従来のように露光とワークWの搬送を間欠的に行うことがなく、そのためパターンとパターンの間にギャップを生じたり、重なりを生じることがない。 According to the exposure apparatus of the present invention as described above, according to the present invention, it performed continuous exposure pattern, intermittently without performing transportation of conventional manner exposing the workpiece W, and therefore the pattern or cause a gap between the pattern, it does not occur overlap. その結果高精度の連続露光が可能になる。 As a result successive exposures of high accuracy become possible. また、フィルムマスクを用いる場合でも、 In addition, even in the case of using the film mask,
その装着が容易であり、装着精度に高いものを要求されないから、操作性が良い等の効果がある。 Its mounting is easy, since not required to higher in the mounting accuracy, the effect of the operation is good and the like.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施形態を示す概略正面図。 Schematic front view showing an embodiment of the present invention; FIG.

【図2】本発明の一実施形態を示す概略斜視図。 Schematic perspective view showing an embodiment of the present invention; FIG.

【図3】本発明の一実施形態におけるフィルムマスク1 Film mask in an embodiment of the present invention; FIG 1
0の円筒体11への装着状態の説明図。 Illustration of the mounting state of the cylindrical body 11 0.

【図4】本発明の一実施形態におけるパターンピッチの説明図。 Figure 4 is an illustration of a pattern pitch in an embodiment of the present invention.

【図5】本発明の一実施形態の動作を説明するフローチャート図。 Flowchart illustrating the operation of one embodiment of the present invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

1:円筒状フォトマスク、2:露光光源、3:反射板、 1: cylindrical photomask, 2: an exposure light source, 3: reflector,
4:遮光カバー、5:遮光カバー、6:レンズ、7:ゴミ取りローラ、8:ゴミ取りローラ、10:フィルムマスク、11:円筒体、12:繋ぎ目、19:パターンピッチ入力装置、20:制御装置、21:駆動装置、2 4: shielding cover, 5: light shielding cover, 6: Lens 7: dust removal roller, 8: dust removal roller, 10: film mask, 11: cylinder, 12: joint, 19: pattern pitch input device, 20: controller, 21: driving device, 2
2:駆動装置。 2: drive.

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 円筒状のフォトマスクと、 露光対象物を所定方向に搬送する手段と、 前記円筒状のフォトマスクを該露光対象物の搬送と同期させて回転させる手段と、 前記フォトマスクのパターンピッチに対応して、前記フォトマスクの回転と露光対象物の搬送の中の1又は両方を制御する制御手段と、 前記円筒状のフォトマスクを透過して前記露光対象物に光を照射する光源と、を備えたことを特徴とする露光装置。 And 1. A cylindrical photomask, and means for conveying the object to be exposed in a predetermined direction, means for rotating said cylindrical photomask in synchronization with conveyance of the exposure object, the photomask corresponding to the pattern pitch, irradiated and control means for controlling one or both in the transport of the rotation and the exposure object of the photomask, the light to the object of exposure is transmitted through the cylindrical photomask exposure apparatus comprising: the light source.
  2. 【請求項2】 前記円筒状のフォトマスクが円筒体とそこに装着されたフィルムマスクを有し、 前記フィルムマスクの繋ぎ目におけるパターンピッチに基づいて、該繋ぎ目部分において該フォトマスクの回転制御を行う、 ことを特徴とする請求項1に記載の露光装置。 2. A has a film mask mounted therein and the cylindrical photomask cylindrical body, the film based on the pattern pitch in the joint of the mask, the rotation control of the photo-mask in 該繋 technique th portion It is carried out, the exposure apparatus according to claim 1, characterized in that.
JP10254649A 1998-08-26 1998-08-26 Aligner Pending JP2000075497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10254649A JP2000075497A (en) 1998-08-26 1998-08-26 Aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10254649A JP2000075497A (en) 1998-08-26 1998-08-26 Aligner

Publications (1)

Publication Number Publication Date
JP2000075497A true JP2000075497A (en) 2000-03-14

Family

ID=17267959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10254649A Pending JP2000075497A (en) 1998-08-26 1998-08-26 Aligner

Country Status (1)

Country Link
JP (1) JP2000075497A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065215A2 (en) * 2001-02-15 2002-08-22 Sipix Imaging, Inc. Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
US6751008B2 (en) 2000-03-03 2004-06-15 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6784953B2 (en) 2001-01-11 2004-08-31 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
US6795229B2 (en) 2001-08-28 2004-09-21 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US6829078B2 (en) 2000-03-03 2004-12-07 Sipix Imaging Inc. Electrophoretic display and novel process for its manufacture
US6831770B2 (en) 2000-03-03 2004-12-14 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6833943B2 (en) 2000-03-03 2004-12-21 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6947202B2 (en) 2000-03-03 2005-09-20 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US7158282B2 (en) 2000-03-03 2007-01-02 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
FR2922330A1 (en) * 2007-10-15 2009-04-17 Commissariat Energie Atomique Process for manufacturing a mask for high resolution lithography
US7525645B2 (en) 2005-06-29 2009-04-28 Samsung Electronics Co., Ltd. Exposure apparatus and method, and mask stage therefor
US7715088B2 (en) 2000-03-03 2010-05-11 Sipix Imaging, Inc. Electrophoretic display
US8023071B2 (en) 2002-11-25 2011-09-20 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display
WO2011129369A1 (en) * 2010-04-13 2011-10-20 株式会社ニコン Exposure apparatus, substrate processing apparatus, and device manufacturing method
US8282762B2 (en) 2001-01-11 2012-10-09 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and process for its manufacture
JP2012248864A (en) * 2012-07-19 2012-12-13 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
JP2013207060A (en) * 2012-03-28 2013-10-07 Sony Corp Structure forming apparatus, structure manufacturing method, and structure
US8582197B2 (en) 2000-03-03 2013-11-12 Sipix Imaging, Inc. Process for preparing a display panel
WO2013191255A1 (en) * 2012-06-21 2013-12-27 株式会社ニコン Illumination apparatus, processing apparatus, and method for manufacturing device
JP2016191937A (en) * 2012-01-12 2016-11-10 株式会社ニコン Substrate treatment apparatus, substrate treatment method, and cylindrical mask
JP2016197241A (en) * 2011-11-04 2016-11-24 株式会社ニコン Pattern forming method and device
TWI640838B (en) * 2012-03-15 2018-11-11 尼康股份有限公司 A cylindrical mask unit and its manufacturing method, substrate processing apparatus, and a substrate processing method

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7715088B2 (en) 2000-03-03 2010-05-11 Sipix Imaging, Inc. Electrophoretic display
US8520292B2 (en) 2000-03-03 2013-08-27 Sipix Imaging, Inc. Electrophoretic display and process for its manufacture
US6751008B2 (en) 2000-03-03 2004-06-15 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US8582197B2 (en) 2000-03-03 2013-11-12 Sipix Imaging, Inc. Process for preparing a display panel
US9081250B2 (en) 2000-03-03 2015-07-14 E Ink California, Llc Electrophoretic display and process for its manufacture
US7158282B2 (en) 2000-03-03 2007-01-02 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6829078B2 (en) 2000-03-03 2004-12-07 Sipix Imaging Inc. Electrophoretic display and novel process for its manufacture
US6831770B2 (en) 2000-03-03 2004-12-14 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6833943B2 (en) 2000-03-03 2004-12-21 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6859302B2 (en) 2000-03-03 2005-02-22 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6947202B2 (en) 2000-03-03 2005-09-20 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US6795138B2 (en) 2001-01-11 2004-09-21 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
US6784953B2 (en) 2001-01-11 2004-08-31 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
US8282762B2 (en) 2001-01-11 2012-10-09 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and process for its manufacture
WO2002065215A3 (en) * 2001-02-15 2003-10-09 Sipix Imaging Inc Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
WO2002065215A2 (en) * 2001-02-15 2002-08-22 Sipix Imaging, Inc. Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
US6795229B2 (en) 2001-08-28 2004-09-21 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US8023071B2 (en) 2002-11-25 2011-09-20 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display
US7525645B2 (en) 2005-06-29 2009-04-28 Samsung Electronics Co., Ltd. Exposure apparatus and method, and mask stage therefor
WO2009050141A1 (en) * 2007-10-15 2009-04-23 Commissariat A L'energie Atomique High-resolution lithography mask, apparatus and process for manufacture thereof, and lithography apparatus and process using such a mask
FR2922330A1 (en) * 2007-10-15 2009-04-17 Commissariat Energie Atomique Process for manufacturing a mask for high resolution lithography
JPWO2011129369A1 (en) * 2010-04-13 2013-07-18 株式会社ニコン An exposure device, a substrate processing apparatus and device manufacturing method
WO2011129369A1 (en) * 2010-04-13 2011-10-20 株式会社ニコン Exposure apparatus, substrate processing apparatus, and device manufacturing method
JP2016197241A (en) * 2011-11-04 2016-11-24 株式会社ニコン Pattern forming method and device
CN106919003A (en) * 2011-11-04 2017-07-04 株式会社尼康 Pattern forming method and pattern forming apparatus, pattern exposure method, and element manufacturing method
JP2016191937A (en) * 2012-01-12 2016-11-10 株式会社ニコン Substrate treatment apparatus, substrate treatment method, and cylindrical mask
TWI640838B (en) * 2012-03-15 2018-11-11 尼康股份有限公司 A cylindrical mask unit and its manufacturing method, substrate processing apparatus, and a substrate processing method
JP2013207060A (en) * 2012-03-28 2013-10-07 Sony Corp Structure forming apparatus, structure manufacturing method, and structure
CN104380204A (en) * 2012-06-21 2015-02-25 株式会社尼康 Illumination apparatus, processing apparatus, and method for manufacturing device
WO2013191255A1 (en) * 2012-06-21 2013-12-27 株式会社ニコン Illumination apparatus, processing apparatus, and method for manufacturing device
JP2012248864A (en) * 2012-07-19 2012-12-13 Nikon Corp Exposure equipment, exposure method, and device manufacturing method

Similar Documents

Publication Publication Date Title
KR100256619B1 (en) Method of forming resist pattern and photomask thereor
JP3711586B2 (en) Scanning exposure apparatus
JP3237522B2 (en) Wafer peripheral exposure method and apparatus
US5982474A (en) Periphery exposing apparatus and method
JPH10207038A (en) Reticle and pattern forming method
KR100558560B1 (en) Exposure apparatus for fabricating semiconductor device
NL186353B (en) An apparatus for imaging a mask pattern on a substrate provided with an opto-electronic detection system for determining a deviation between the image plane of a projection lens system and the substrate plane.
JP2004521376A (en) Structure and method for correcting the proximity effect in birds tone attenuated phase shift mask
CN101300528B (en) Pattern exposure method and pattern exposure apparatus
EP0920053A2 (en) Device for exposing the peripheral area of a semiconductor wafer
JP3556591B2 (en) Defect correction method of the gray-tone portion in the gray-tone mask
JP2003005296A (en) Photographic processing device
US5760881A (en) Exposure apparatus with light shielding portion for plotosensitive elements
JPH0950951A (en) Lithography method and lithography apparatus
JP5662741B2 (en) Method for manufacturing an imprint apparatus and an article
KR100203524B1 (en) Laser apparatus and method of manufacturing lcd element using the same
JPH0622192B2 (en) Display panel manufacturing method
CN86100939A (en) Process a device for making a printing screen
GB2316768A (en) Alignment mask
US5015553A (en) Method of patterning resist
US4582768A (en) Method for forming register marks
JPH0729454B2 (en) Printer of writing position adjustment mechanism
JP4861778B2 (en) Pattern exposure method and apparatus
JP2938439B2 (en) Method of manufacturing a phase shift mask
CN1073718C (en) Method for changing guide width and mechanism for the same