KR20180087385A - EXPOSURE APPARATUS, EXPOSURE SYSTEM, SUBSTRATE PROCESSING METHOD, AND DEVICE DEVICE DEVICE - Google Patents

Abstract

An exposure apparatus (EX) for carrying a substrate (P) along a long longitudinal direction and exposing a pattern for an electronic device on a substrate (P) is provided with mark position information of a plurality of marks formed on a substrate A first pattern exposure section EXH1 for aligning and projecting an energy line corresponding to design information of a pattern on the basis of mark position information in order to expose a pattern to an exposure area on the substrate P and an alignment microscope ALG, , A control device (14) for outputting at least one of adjustment information and mark position information relating to the position adjustment of the energy line projected onto the exposure area (W) for the purpose of creating a mask pattern corresponding to the pattern to be exposed in the device formation area, Respectively. The exposure apparatus further includes a plurality of exposure units arranged along the transfer direction and configured to expose the pattern to the substrate in a different exposure system, the substrate support member having a support surface that is curvedly supported in the transfer direction .

Description

EXPOSURE APPARATUS, EXPOSURE SYSTEM, SUBSTRATE PROCESSING METHOD, AND DEVICE DEVICE DEVICE

The present invention relates to an exposure apparatus, an exposure system, a substrate processing method, and a device manufacturing apparatus for exposing a pattern for an electronic device to a sheet substrate.

Conventionally, in a photolithography process when an electronic device is formed on a semiconductor substrate (silicon substrate), for example, as disclosed in Japanese Patent Application Laid-Open No. 10-303125, Is transferred to a photosensitive layer (photoresist) on the surface of a substrate. Japanese Patent Laid-Open Publication No. 10-303125 discloses an optical stepper (exposure apparatus using a mask substrate) having a high throughput when transferring a device pattern onto a single substrate and an optical stepper A rough pattern portion of an electronic device is exposed with an optical stepper, and a fine pattern portion is exposed with an electron beam exposure device using both of the electron beam exposure devices having an electron beam exposure device.

In recent years, in the manufacture of a liquid crystal display device, an organic EL display device, a touch panel or a high density mounting device, an electronic device including a display device, a sensor electrode, a thin film transistor, an IC chip, A step of forming an element on a flexible substrate is used. Also in this process, there is a case where a lithography process for performing pattern transfer using an exposure apparatus on a photosensitive layer on a flexible substrate made of plastic, polymer resin or the like is included. However, in the pattern transfer using the flexible substrate as the object to be exposed, two-dimensional deformation due to expansion and contraction of the flexible substrate tends to occur. Therefore, in order to obtain a high throughput (mass productivity), even if an exposure process using a mask made based on design data is performed, even when a new pattern is superimposed on a basic pattern layer already formed on a flexible substrate for exposure There is a case where the overlapping accuracy is remarkably lowered.

A first aspect of the present invention is an exposure apparatus for exposing a pattern for an electronic device on a sheet substrate by transporting a sheet substrate of a long length with flexibility along a longitudinal direction, A mark detecting section for detecting mark position information of a plurality of marks formed on the sheet substrate; and a mark detection section for detecting mark position information of a plurality of marks formed on the sheet substrate, A first pattern exposure unit configured to position and project an energy ray on the basis of the mark position information; and a control unit configured to control at least one of adjustment information relating to the position adjustment of the energy ray projected onto the device formation region, And an output section for outputting for generating a mask pattern corresponding to the pattern to be exposed in the device formation region .

A second aspect of the present invention is an exposure system for carrying a flexible elongated sheet substrate along a long longitudinal direction to expose a pattern for an electronic device on the sheet substrate, wherein the exposure apparatus of the first aspect, Wherein the actual pattern information is generated for correcting the design information based on at least one of the adjustment information and the mark position information and outputting the mask pattern corresponding to the pattern to be exposed in the device formation area And a mask creating device for creating the mask pattern by using a third pattern exposure section for projecting an energy ray based on the design information, wherein the mask creating device includes a mask substrate on which the mask pattern is formed, And the actual pattern information is given to the third pattern exposure section as the design information, By projecting the energy radiation corresponding to the actual pattern for the information on the mask substrate, forming a said mask pattern corresponding to the real pattern on the information for the mask substrate.

A third aspect of the present invention is a substrate processing method for carrying a long elongated flexible substrate along an elongated longitudinal direction to expose a pattern for an electronic device on the sheet substrate, And a first pattern exposure section for projecting an energy ray according to design information to a device formation region on the sheet substrate on which the electronic device is to be formed, At least one of the adjustment information relating to the position adjustment of the energy ray projected on the device formation region and the mark position information and the mark position information, Provided for creating a mask pattern to be exposed in the device formation region based on the design information It comprises a generating process of generating the actual pattern information.

A fourth aspect of the present invention is a method for forming an electronic device on a substrate by using a plurality of exposure units for irradiating the sheet substrate with exposure light corresponding to the pattern of the electronic device while conveying the flexible long substrate in the longitudinal direction Wherein the plurality of exposure units are arranged along a conveying direction of the substrate, and each of the plurality of exposure units is configured to move the substrate, to which exposure light corresponding to a pattern of the electronic device is irradiated, And a substrate support member having a support surface for supporting the substrate by a plurality of exposure units, wherein the plurality of exposure units are configured to expose the pattern onto the substrate by different exposure methods.

1 is a schematic configuration diagram of a device manufacturing system including an exposure apparatus according to the first embodiment.
2 is a view showing the configuration of the first pattern exposure unit shown in Fig.
Fig. 3 is a diagram showing a marking line formed on the substrate and a drawing line of spot light projected onto the substrate by the first pattern exposure unit shown in Fig. 2; Fig.
Fig. 4 is a view showing an example of the configuration of the second pattern exposure unit shown in Fig. 1. Fig.
FIG. 5A is a plan view of the illumination area on the cylindrical mask held on the rotation holding drum and viewed from the -Z direction. FIG. 5B shows the projection area on the irradiated surface of the substrate supported by the rotary drum in the + Z direction Fig.
Fig. 6 is a view showing another example of the configuration of the second pattern exposure unit shown in Fig. 1. Fig.
7 is a view showing a configuration of an exposure system for mask formation according to the first embodiment.
8 is a view showing a configuration of an exposure apparatus according to Modification 1. Fig.
Fig. 9 shows the arrangement relationship of the exposed portion of the maskless mask and the exposed portion of the mask in the exposure apparatus according to the second embodiment, and shows the state at the time of maskless exposure.
10 is a view showing a state at the time of mask exposure in the exposure apparatus of FIG.
11 is a view showing a configuration of an exposure apparatus according to a first modification of the second embodiment.
12 is a view showing a configuration of an exposure apparatus according to a second modification of the second embodiment.
13 is a diagram showing the entire configuration of a device manufacturing apparatus according to the third embodiment.
14 is a view showing a configuration of an exposure unit incorporated in the device manufacturing apparatus of Fig.
Fig. 15 is a view for explaining the structure of a flexible sheet sensor suitable for pattern exposure in a roll-to-roll manner on a substrate by the exposure unit of Fig. 14;

BEST MODE FOR CARRYING OUT THE INVENTION Exemplary embodiments of an exposure apparatus, an exposure system, a substrate processing method, and a device manufacturing apparatus according to aspects of the present invention will be described in detail below with reference to the accompanying drawings. Further, aspects of the present invention are not limited to these embodiments, but may include various modifications or improvements. That is, the constituent elements described below include those which can be readily devised by those skilled in the art and substantially the same, and the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions or alterations of the constituent elements can be made without departing from the gist of the present invention.

[First Embodiment]

1 is a schematic configuration diagram of a device manufacturing system 10 including an exposure apparatus EX for performing exposure processing on a substrate (object to be inspected) P in the first embodiment. In the following description, X, Y, and Z directions will be described with the XYZ orthogonal coordinate system set, unless otherwise specified.

The device manufacturing system 10 is, for example, a manufacturing system that is assembled in a manufacturing line for manufacturing a flexible display as an electronic device. Examples of the flexible display include an organic EL display, a liquid crystal display, and the like. The device manufacturing system 10 is a system in which a substrate P is fed from a feed roll (not shown) having a flexible sheet-like substrate (sheet substrate) P wound in a roll shape, Called roll-to-roll system in which the substrate P after various treatments is continuously wound on a recovery roll (not shown). The substrate P has a band-like shape in which the carrying direction of the substrate P is long in the longitudinal direction (long) and the width direction is short in the longitudinal direction (short). The substrate P after various treatments is a so-called multi-surface mounting substrate in which the formation regions (exposure regions) of a plurality of electronic devices are continuous along the longitudinal direction. The substrate P sent from the supply roll is sequentially subjected to various treatments in the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, and the like, and is wound on the collecting roll. Here, one or a plurality of display panels are formed in one exposure area on the flexible substrate P, but other electronic devices may be used, such as a flexible body sensor for a living body, a flexible color filter for a liquid crystal display An orientation film, or a flexible multilayer wiring film (long wiring harness) may be formed.

The X direction is a direction from the process apparatus PR1 to the process apparatus PR2 via the exposure apparatus EX in the horizontal plane. The Y direction is the width direction of the substrate P in the direction orthogonal to the X direction in the horizontal plane. The Z direction is a direction orthogonal to the X direction and the Y direction (upward direction), and the -Z direction is parallel to the direction in which gravity acts.

As the substrate P, for example, a resin film, a foil (foil) made of a metal such as stainless steel or an alloy, or the like is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, Polystyrene resin, and vinyl acetate resin may be used. The thickness and the rigidity (Young's modulus) of the substrate P are set such that when the substrate P passes through the transport path of the exposure apparatus EX, the substrate P is folded by buckling It may be in a range in which irreversible wrinkles do not occur. As the base material of the substrate P, a film of PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 to 200 mu m is a typical example of a suitable sheet substrate.

Since the substrate P is sometimes subjected to heat in each processing performed in the processing apparatus PR1, the exposure apparatus EX and the processing apparatus PR2, the substrate P having a material having a significantly small coefficient of thermal expansion ) Is preferably selected. For example, the thermal expansion coefficient can be suppressed by mixing the inorganic filler with the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like. Alternatively, the substrate P may be a single layer of ultra-thin glass having a thickness of about 100 占 퐉 manufactured by a float method or the like, and a laminated body obtained by laminating the resin film, It may be.

By the way, the flexibility of the substrate P means that the substrate P is not sheared or broken even when a force of about its own weight is applied to the substrate P, and the substrate P can be bent It says nature. Also, the property of bending by the force of its own weight is included in the flexibility. The degree of flexibility changes depending on the material, size and thickness of the substrate P, the layer structure formed on the substrate P, the environment such as temperature and humidity, and the like. In any case, when the substrate P is correctly wound on the conveying direction switching member such as various conveying rollers, rotary drums, and the like provided in the conveying path in the device manufacturing system 10 according to the present embodiment, And if the substrate P can be smoothly transported without causing breakage (cracking or cracking), it can be said to be within the range of flexibility.

The process apparatus PR1 performs the process of the previous process with respect to the substrate P while continuously transferring the substrate P subjected to the exposure process in the exposure apparatus EX to the + X direction side along the long direction. The substrate P on which the previous process has been carried is transported toward the exposure apparatus EX. The substrate P to be sent to the exposure apparatus EX by the process of the previous step is a substrate (photosensitive substrate) P having a photosensitive functional layer (photosensitive layer) formed on its surface.

This photosensitive functional layer is applied as a solution onto the substrate P, and becomes a layer (film) by drying. A typical example of the photosensitive functional layer is a photoresist, but a material which does not require a developing treatment is a photosensitive silane coupling agent (SAM) in which the liquidity of the portion irradiated with ultraviolet rays is modified, or a plate- Photosensitive reducers, and the like. When a photosensitive silane coupling agent is used as the photosensitive functional layer, the pattern portion exposed by ultraviolet light on the substrate P is modified from lyophobic to lyophilic. Therefore, the pattern layer can be formed by selectively applying a conductive ink (ink containing conductive nanoparticles such as silver or copper) or a liquid containing a semiconductor material onto the lyophilic area. When a photosensitive reducer is used as the photosensitive functional layer, the plating reducer is exposed to a pattern portion exposed with ultraviolet rays on the substrate (P). Therefore, after the exposure, the substrate P is immediately dipped (immersed) in the plating solution containing palladium ions or the like for a predetermined time to form (precipitate) a pattern layer of palladium. This plating process is an additive process. However, in the case where the etching process as a subtractive process is premised, the substrate P to be sent to the exposure apparatus EX is a PET Or PEN and a metallic thin film such as aluminum (Al) or copper (Cu) is deposited on the entire surface or selectively on the surface thereof and a photoresist layer is further laminated thereon.

The exposure apparatus EX continuously conveys the substrate P conveyed from the process apparatus PR1 to the + X direction side along the longitudinal direction and conveys the substrate P on the irradiated surface (photosensitive surface) of the substrate P on which the photosensitive functional layer is formed , A circuit for display, a wiring, or the like. As a result, a latent image according to a predetermined pattern exposed is formed on the photosensitive functional layer of the substrate P. [ Since the substrate P is continuously transported along the transport direction, a plurality of exposure regions W, in which the pattern is exposed by the exposure apparatus EX, are provided at predetermined intervals along the longitudinal direction of the substrate P 3). Since the electronic device is formed in this exposure region W, the exposure region W is also a device formation region. Further, since the electronic device is constituted by overlapping a plurality of pattern layers (layers formed with patterns), a pattern corresponding to each layer is exposed by the exposure apparatus EX.

The processing apparatus PR2 continuously processes the substrate P subjected to exposure processing in the exposure apparatus EX to the + X direction side along the longitudinal direction, and performs post-processing (e.g., Development, etching, etc.). A pattern layer according to the latent image is formed on the substrate P by the subsequent process.

As described above, since the electronic device is constituted by overlapping a plurality of pattern layers, one pattern layer is formed through at least respective processes of the device manufacturing system 10. Therefore, in order to form the electronic device, each processing of the device manufacturing system 10 as shown in Fig. 1 must be performed at least twice. The pattern roll can be stacked by mounting the recovery roll on which the substrate P is wound to the other device manufacturing system 10 as a supply roll. Such an operation is repeated to form an electronic device. The processed substrate P is in a state in which a plurality of electronic devices or areas in which specific pattern layers of the electronic device are formed are continuous along the longitudinal direction of the substrate P at predetermined intervals.

The recovery roll recovering the substrate P formed with the electronic devices in a continuous state may be mounted on a dicing device (not shown). The dicing apparatus equipped with the recovery rolls divides (dices) the processed substrate P into individual electronic devices to obtain a plurality of electronic devices. The dimensions of the substrate P are, for example, about 10 cm to 2 m in the width direction (direction in which the substrate is shortened) and a dimension in the length direction (elongated direction) is 10 m or more. The dimensions of the substrate P are not limited to the above dimensions.

Next, the exposure apparatus EX will be described in detail. The exposure apparatus EX is stored in a temperature control chamber (ECV). The inside of the temperature-controlled chamber (ECV) is maintained at a predetermined temperature, thereby suppressing the shape change due to the temperature of the substrate (P) conveyed inside. The temperature control chamber (ECV) is disposed on the mounting surface (E) of the manufacturing plant through a passive or active vibration isolating unit (SU1, SU2). The vibration isolating units SU1 and SU2 reduce the vibration from the mounting surface E. The mounting surface E may be a surface on a mounting pedestal (pedestal), or may be a bottom surface. The exposure apparatus EX includes a substrate transport mechanism 12, a first pattern exposure unit (exposure unit) EXH1, a second pattern exposure unit (exposure unit) EXH2, a control device 14, (ALG (ALG1 to ALG4)). The control device 14 controls each part (substrate transport mechanism 12, first pattern exposure section EXH1, second pattern exposure section EXH2, alignment microscope (ALG), etc.) of the exposure apparatus EX will be. The control device 14 includes a computer and a storage medium in which programs and pattern data are stored. The computer 14 functions as the control device 14 of the present embodiment by executing the program. The first pattern exposure section EXH1 and the second pattern exposure section EXH2 are provided above the rotary drum DR of the substrate transport mechanism 12 (on the + Z direction side).

The substrate transport mechanism (transport apparatus) 12 transports the substrate P transported from the process apparatus PR1 to the process apparatus PR2 at a predetermined speed. The substrate transport mechanism 12 defines a transport path of the substrate P transported in the exposure apparatus EX. The substrate transport mechanism 12 includes an edge position controller EPC, a drive roller R1, a tension adjustment roller RT1, a rotary drum (cylindrical), and the like, in this order from the upstream side (-X direction side) Drum DR, a tension adjustment roller RT2, a drive roller R2, and a drive roller R3.

The edge position controller (EPC) adjusts the position in the width direction of the substrate P conveyed from the process apparatus PR1 (in the direction of the short side of the substrate P in the Y direction). That is, the edge position controller (EPC) controls the position of the edge of the substrate P in the width direction of the substrate P, which is being transported with a predetermined tension, in a range of about 占 퐉 to about 占 퐉 The substrate P is moved in the width direction to adjust the position of the substrate P in the width direction so as to enter the allowable range (allowable range). The edge position controller (EPC) has an edge sensor (edge detecting section) (not shown) for detecting the position of the edge (edge) in the width direction of the substrate P, and based on the detection signal detected by the edge sensor, In the width direction. The drive roller R1 rotates while holding both sides of the front and rear sides of the substrate P carried from the edge position controller EPC and conveys the substrate P toward the rotary drum DR. The edge position controller EPC determines the position in the width direction of the substrate P so that the longitudinal direction of the substrate P carried by the rotary drum DR is orthogonal to the central axis AXo of the rotary drum DR Adjust.

The rotary drum DR has a central axis AXo extending in the Y direction and extending in a direction intersecting the direction in which the gravity acts and a cylindrical outer peripheral surface (outer peripheral surface) having a certain radius from the central axis AXo, The substrate P is conveyed in the conveying direction (sub scanning direction) by rotating around the central axis AXo while supporting a part of the substrate P in the longitudinal direction along the main surface AX0. On both sides in the Y direction of the rotary drum DR, there is provided a shaft Sft supported by bearings to rotate around the central axis AXo. The shaft Sft rotates about the center axis AXo by giving a rotational torque from a rotation drive source (not shown) (for example, a motor or a deceleration mechanism) controlled by the control device 14. [

The drive rollers R2 and R3 are arranged at a predetermined interval along the + X direction to give a predetermined degree of looseness to the substrate P after exposure. The driving rollers R2 and R3 rotate while holding both the front and back surfaces of the substrate P in the same manner as the driving roller R1 to transport the substrate P toward the processing device PR2. The driving rollers R2 and R3 are provided on the downstream side (+ X direction side) in the carrying direction with respect to the rotary drum DR and the driving roller R2 is provided on the upstream side -X direction side). The tension adjusting rollers RT1 and RT2 are pressed in the -Z direction and give a predetermined tension to the substrate P wound and held on the rotary drum DR in the longitudinal direction. As a result, the tension in the longitudinal direction applied to the substrate P held by the rotary drum DR is stabilized within a predetermined range. It is possible to increase the contact angle of the substrate P to the rotary drum DR by shortening the distance between the tension adjusting rollers RT1 and RT2 with respect to the X direction. The control device 14 also rotates the drive rollers R1 to R3 by controlling a rotation drive source (not shown) (for example, a motor or a deceleration mechanism). The speed of the substrate P supported on the rotary drum DR, that is, the speed in the sub-scan direction of the substrate P, is determined by the rotation speeds of the drive rollers R1 and R2 and the rotary drum DR, Is defined.

Next, the configuration of the first pattern exposure unit EXH1 will be described with reference to Fig. The first pattern exposure unit EXH1 exposes a pattern by a straight drawing method that does not use a mask, that is, a so-called raster scanning method. The first pattern exposure unit EXH1 is configured to project the spot light SP of the beam LB, which is an energy beam for exposure, onto the exposure region W of the substrate P being supported by the rotary drum DR, Is scanned (main scanning) one-dimensionally in the main scanning direction (Y direction) on the substrate P (on the surface to be irradiated of the substrate P). The first pattern exposure section EXH1 modulates (turns on / off) the intensity of the spot light SP scanned in the main scanning direction at a high speed according to the pattern data (drawing data) which is the design information of the pattern to be drawn. Thus, a light pattern corresponding to a predetermined pattern such as a circuit for display or wiring is drawn on the surface to be irradiated on the substrate P. That is, the spot light SP is relatively two-dimensionally scanned on the surface to be irradiated of the substrate P by the auxiliary speck of the substrate P and the main speck of the spot light SP, and a predetermined pattern is drawn in the exposure area W of the substrate P Is exposed.

The first pattern exposure unit EXH1 includes a light source device 20, a plurality of light introducing optical systems BDU (BDU1 to BDU6), and a plurality of scanning units U (U1 to U6). The light source device 20 has a pulse light source and emits a pulsed beam (pulse light, laser) LB. This beam LB is ultraviolet light having a peak wavelength in a wavelength band of 370 nm or less, and the emission frequency of the beam LB is Fe. The light source device 20 can be a fiber amplifier laser light source capable of oscillating a pulse beam having an ultraviolet wavelength band and a high luminance with a high emission frequency Fe. A fiber amplifier laser light source includes a semiconductor laser having an infrared wavelength band that emits pulses at a high frequency of 100 MHz or more, a fiber amplifier that amplifies pulse light in an infrared wavelength band, and a pulse light in an amplified infrared wavelength band as pulse light in an ultraviolet wavelength band And a wavelength conversion element (a harmonic generation element) for converting. Pulsed light of an infrared wavelength band from a semiconductor laser is also called a seed light and it is possible to change the amplification efficiency in a fiber amplifier by changing the luminescence characteristics of a heptic pulse (pulse duration, steepness of rise and fall, (Amplification factor) can be changed, so that the intensity of the pulse beam in the ultraviolet wavelength band finally output can be modulated at high speed. In addition, the pulse beam in the ultraviolet wavelength band outputted from the fiber amplifier laser light source can have a very short emission duration of several picoseconds to several tens of picoseconds. Therefore, even in the raster scanning method, the spot light SP produced by the pulse light of the pulse beam hardly shakes on the surface to be irradiated on the substrate P, and the shape and the intensity distribution (for example, A circular Gaussian distribution).

The first pattern exposure unit EXH1 includes a plurality of scan units U (U1 to U6) having the same configuration, and is thus a so-called multi-beam pattern exposure unit. The plurality of scanning units U (U1 to U6) are arranged in two rows in the circumferential direction of the rotary drum DR with the center plane Poc1, which will be described later, interposed therebetween. The odd number of scanning units U1, U3 and U5 are arranged in one row along the Y direction on the upstream side in the carrying direction of the substrate P with respect to the center plane Poc1. The even number of scanning units U2, U4 and U6 are arranged in one line along the Y direction on the downstream side in the carrying direction of the substrate P with respect to the center plane Poc1. Each of the scanning units U (U1 to U6) projects the spot light SP onto the surface to be irradiated on the substrate P while irradiating the spot light SP onto a predetermined drawing line (Scanning line) SL. In order to distinguish the drawing lines SL of the respective scanning units U (U1 to U6), a drawing line SL in which the spot light SP is scanned by the scanning unit U1 is denoted by SL1, and scanning units U2 to U6 , The drawing line SL on which the spot light SP is scanned may be represented by SL2 to SL6.

The position of the spot light SP irradiated on the irradiated surface of the substrate P by the scanning units U1, U3 and U5 is the same for the conveying direction of the substrate P, that is, . The positions of the spot lights SP irradiated on the irradiated surface of the substrate P by the even number of the scanning units U2, U4 and U6 are the same at the same position in the carrying direction of the substrate P, Heat. The position of the spot light SP irradiated on the irradiated surface of the substrate P by the scanning units U1, U3 and U5 and the positions of the scanning units U2, U4 and U6, A plane passing through the central point of the spot SP irradiated on the irradiated surface of the substrate P and the central axis AXo of the rotary drum DR and extending in the Y direction is defined as the center plane Poc1. In Fig. 2, the direction perpendicular to the Y direction in the center plane Poc1 is Z1 ', and the direction perpendicular to the center plane Poc1 is X1'. -Z1 'direction is a direction side in which gravity acts and the + X1' direction is a side of the substrate P in the carrying direction. The odd number of scanning units U1, U3 and U5 and the even number of scanning units U2, U4 and U6 are arranged symmetrically with respect to the center plane Poc1 with respect to the X1 'direction.

Here, with reference to Fig. 3, the drawing lines SL (SL1 to SL6) of the respective scanning units U (U1 to U6) will be briefly described. The plurality of scanning units U (U1 to U6) are arranged so that the plurality of drawing lines SL (SL1 to SL6) are aligned with each other in the Y direction without being separated from each other as shown in Fig. Each of the scanning units U (U1 to U6) shares the scanning area so as to cover all of the widthwise direction of the exposure area W by all of the plurality of scanning units U (U1 to U6). As a result, each of the scanning units U (U1 to U6) can draw a pattern for each of a plurality of regions divided in the width direction of the substrate P. [ For example, when the scanning length in the Y direction (length of the rendering line SL) by one scanning unit U is about 20 to 50 mm, three of the odd number of scanning units U1, U3, U5, By arranging the three scanning units U in total of the units U2, U4 and U6 in the Y direction, the width in the Y direction to be rendered is widened to about 120 to 300 mm. The lengths of the rendering lines SL1 to SL6 are, in principle, the same. In other words, the scanning distance of the spot light SP of the beam LB scanned along each of the rendering lines SL1 to SL6 is, in principle, the same. When it is desired to increase the width of the exposure area W, it is possible to increase the length of the drawing line SL itself or to increase the number of the scanning units U arranged in the Y direction.

The drawing lines SL (SL1 to SL6) are arranged in two rows in the circumferential direction of the rotary drum DR with the center plane Poc1 therebetween. The odd number of drawing lines SL1, SL3 and SL5 are located on the irradiated surface of the substrate P on the upstream side (-X direction side) with respect to the center plane Poc1 in the transport direction of the substrate P The even number of drawing lines SL2, SL4 and SL6 are located on the surface to be irradiated to the substrate P on the downstream side (+ X direction side) in the carrying direction of the substrate P with respect to the center plane Poc1. The drawing lines SL1 to SL6 are substantially parallel to the width direction (Y direction) of the substrate P. [

The drawing lines SL1, SL3, and SL5 are arranged in a straight line at a predetermined interval along the width direction (scanning direction) of the substrate P. [ The drawing lines SL2, SL4 and SL6 are likewise arranged in a straight line at a predetermined interval along the width direction (scanning direction) of the substrate P. [ At this time, the drawing line SL2 is disposed between the drawing line SL1 and the drawing line SL3 with respect to the width direction of the substrate P. Similarly, the drawing line SL3 is disposed between the drawing line SL2 and the drawing line SL4 with respect to the width direction of the substrate P. The drawing line SL4 is arranged between the drawing line SL3 and the drawing line SL5 with respect to the width direction of the substrate P and the drawing line SL5 is arranged between the drawing line SL4 and the drawing line SL6 Respectively. In the present embodiment, the scanning direction of the spot light SP of the beam LB scanned along the drawing lines SL1, SL3, and SL5 is -Y direction, and the direction of the spot light SP of the beam LB scanned along the drawing lines SL2, SL4, The scanning direction is referred to as + Y direction.

Next, the configuration of the scanning units U (U1 to U6) will be described with reference to Fig. Since the scanning units U (U1 to U6) have the same configuration, only the scanning unit U1 will be described, and the description of the scanning units U2 to U6 will be omitted. The scanning unit U1 will be described using an XtYZt Cartesian coordinate system. The Zt direction is parallel to the traveling direction of the beam LB irradiated from the scanning unit U1 to the substrate P, and the Xt direction is orthogonal to the YZt plane. In addition, the -Zt direction is the side in which gravity acts and the + Xt direction is the side of the substrate P in the carrying direction.

The scanning unit U1 has cylindrical lenses CYa and CYb, a polygon mirror PM, an f? Lens FT and a light path defining member RG for appropriately bending the optical path of the beam LB. The light path defining member RG has a plurality of reflection mirrors and the like. The cylindrical lenses CYa and CYb, the polygon mirror PM and the f? Lens FT are provided on the optical path of the beam LB defined by the optical path defining members RG. The beam LB incident from the light introducing optical system BDU1 is incident on the polygon mirror PM. The polygon mirror PM reflects the incident beam LB toward the f? Lens FT. The polygon mirror PM deflects the incident beam LB to scan the spot light SP irradiated onto the surface to be irradiated on the substrate P and reflects it. The polygon mirror PM is a rotating polygon mirror having a plurality of reflection surfaces formed around the rotation axis AXp and the rotation axis AXp extending in the Zt direction, though not shown in detail. The reflection angle of the pulse-shaped beam LB incident on the reflection surface of the polygon mirror PM can be continuously changed by rotating the polygon mirror PM around the rotation axis AXp. As a result, the reflection direction (deflection direction) of the beam LB is continuously changed by one of the reflection surfaces, and the spot light SP of the beam LB irradiated on the irradiated surface of the substrate P is reflected by the imaging line SL1 Reference) image. The rotation of the polygon mirror PM is rotated at a constant speed by a polygonal drive unit (not shown) including a motor or the like under the control of the controller 14. [

With respect to the traveling direction of the beam LB, a cylindrical lens CYa is provided immediately before the polygon mirror PM. Therefore, the beam LB passes through the cylindrical lens CYa and is incident on the polygon mirror PM. In the case where the reflecting surface of the polygon mirror PM is inclined with respect to the Zt direction (inclination of the reflecting surface with respect to the normal line of the XtY plane) by the cylindrical lens CYa whose busbars are parallel to the Y direction, The influence thereof can be suppressed. For example, the irradiation position of the spot light SP of the beam LB irradiated on the irradiated surface of the substrate P is prevented from shifting in the Xt direction.

The f? lens FT is a telecentric scan lens that transmits the beam LB from the polygon mirror PM so as to be parallel to the optical axis of the f? lens FT in the XtY plane. The optical axis of the f? Lens FT is parallel to the Xt direction. The beam LB transmitted through the f? lens FT is transmitted through the cylindrical lens CYb and projected onto the surface to be irradiated of the substrate P. [ The beam LB projected onto the substrate P is projected onto the surface of the substrate P to have a diameter of about several micrometers (e.g., 3 占 퐉) on the surface to be irradiated with the substrate P by the cylindrical lens CYb, ) Of the beam spot SP. The spot light SP projected onto the irradiated surface of the substrate P is scanned by the polygon mirror PM along the imaging line SL1 extending in the main scanning direction. The rotational speed of the polygon mirror PM is controlled so that the spot light SP is irradiated along the drawing line SL1 while the spot light SP is overlapped by a predetermined amount (for example, 1/2 of the diameter of the spot light SP, The light emission frequency Fe of the light source device 20 is defined.

the incident angle [theta] b of the beam LB to the f [theta] lens FT changes in accordance with the rotational angle position (the range of [theta] b / 2) of the polygon mirror PM. The f? lens FT projects the spot light SP of the beam LB at the image height position on the irradiated surface of the substrate P proportional to the incident angle? b. Assuming that the focal length is f and the image height is y, the f? Lens FT has a relationship of y = f? B. Therefore, the spot light SP of the beam LB can be accurately scanned at the constant velocity (constant velocity) in the Y direction by the f? Lens FT. When the incident angle? b of the beam LB to the f? lens FT is 0 degree, the beam LB incident on the f? lens FT proceeds along the optical axis of the f? lens FT.

The optical axis of the beam LB irradiated from the scanning unit U1 to an arbitrary point (for example, the middle point) on the drawing line SL1 is referred to as an irradiation axis Le1. Similarly, the optical axes of the beams LB irradiated to arbitrary points (for example, the middle point) on the drawing lines SL2 to SL6 from the scanning units U2 to U6 are referred to as irradiation axes Le2 to Le6. Each of the irradiation axes Le (Le1 to Le6) is a line connecting the rendering lines SL (SL1 to SL6) and the central axis AXo in the X1'Z1 'plane (XZ plane). Therefore, each of the scanning units U (U1 to U6) irradiates the beam LB orthogonal to the surface to be irradiated on the substrate P with respect to the X1'Z1 'plane (XZ plane). That is, each of the scanning units U (U1 to U6) irradiates the beam LB toward the central axis AXo of the rotary drum DR with respect to the X1'Z1 'plane (XZ plane). The irradiation axes Le1, Le3 and Le5 are in the same direction in the X1'Z1 'plane (XZ plane), and the irradiation axes Le2, Le4 and Le6 are in the same direction in the X1'Z1' plane (XZ plane). In the X1'Z1 'plane (XZ plane), the irradiation axes Le1, Le3, and Le5 and the irradiation axes Le2, Le4, and Le6 are set so that the angle with respect to the center plane Poc1 is ± θ (see FIG. 2) .

The plurality of light introducing optical systems BDU (BDU1 to BDU6) guides the beam LB from the light source device 20 to the plurality of scanning units U (U1 to U6). The light introducing optical system BDU1 guides the beam LB to the scanning unit U1 and the light introducing optical system BDU2 guides the beam LB to the scanning unit U2. Similarly, the light introducing optical systems BDU3 to BDU6 guide the beam LB to the scanning units U3 to U6. The light introducing optical systems BDU (BDU1 to BDU6) irradiate the beam LB to the scanning units U (U1 to U6) along the irradiation axis Le (Le1 to Le6). That is, the beam LB guided from the light introducing optical system BDU1 to the scanning unit U1 passes through the irradiation axis Le1. Similarly, the beam LB guided from the light introducing optical systems BDU2 to BDU6 to the scanning units U2 to U6 passes through the irradiation axes Le2 to Le6. The beam LB from the light source device 20 is divided into six beams LB by a beam splitter or a reflecting mirror or the like (not shown), and is incident on each of the light introducing optical systems BDU (BDU1 to BDU6).

The plurality of light introducing optical systems BDU (BDU1 to BDU6) are used for drawing the light beam LB guided to the plurality of scanning units U (U1 to U6) at a high speed according to the pattern data And optical elements (AOM (AOM1 to AOM6)). The light introducing optical system BDU1 has the drawing optical element AOM1 and the light introducing optical systems BDU2 to BDU6 have the drawing optical elements AOM2 to AOM6. The optical elements for drawing (AOM (AOM1 to AOM6)) are acousto-optic modulators having transparency to the beam LB. The imaging optical elements AOM (AOM1 to AOM6) generate first-order diffracted light by diffracting the beam LB from the light source device 20 at a diffraction angle corresponding to the frequency of a high-frequency signal as a drive signal, And diffracted light is emitted as a beam LB directed to each of the scanning units U (U1 to U6). The imaging optical elements AOM (AOM1 to AOM6) turn on / off the generation of the first-order diffracted light by diffracting the incident beam LB in accordance with on / off of the drive signal (high-frequency signal) from the control device 14 .

When the driving signal (high frequency signal) from the control device 14 is in the OFF state, the imaging optical elements AOM (AOM1 to AOM6) transmit the incident beam LB without diffracting, BDU6), which are not shown in the drawing. Therefore, when the driving signal is in the OFF state, the beam LB transmitted through the imaging optical elements AOM (AOM1 to AOM6) is not incident on the scanning units U (U1 to U6). That is, the intensity of the beam LB passing through the scanning units U (U1 to U6) becomes low level (zero). This means that the intensity of the spot light SP of the beam LB irradiated on the surface to be irradiated is modulated at a low level (zero) when viewed from the surface to be irradiated on the substrate P. [ On the other hand, when the drive signal (high-frequency signal) from the control device 14 is on, the optical element for painting (AOM (AOM1 to AOM6)) diffracts the incident beam LB, And guides the beam LB to the unit U (U1 to U6). Therefore, when the driving signal is in the ON state, the intensity of the beam LB passing through the scanning units U (U1 to U6) becomes high. This means that the intensity of the spot light SP of the beam LB irradiated on the surface to be irradiated is modulated at a high level on the irradiated surface of the substrate P. [ As described above, by applying the on / off drive signals to the imaging optical elements AOM (AOM1 to AOM6), it is possible to switch on / off the imaging optical elements AOM (AOM1 to AOM6).

The pattern data is provided for each of the scanning units U (U1 to U6), and the control device 14 supplies pattern data of a pattern drawn by each of the scanning units U (U1 to U6) (AOM (AOM1 to AOM6)) on the basis of the unit of the writing optical element (AOM (AOM1 to AOM6) corresponding to one bit and the logical value "0" or "1" And switches the signal to the ON state / OFF state at high speed.

Here, the pattern data will be briefly described. The pattern data is obtained by dividing the pattern drawn by each scanning unit U by the pixels of the dimension set in accordance with the size of the spot light SP, (Pixel data) according to the pattern. That is, the direction along the scanning direction (main scanning direction, Y direction) of the spot light is referred to as a row direction and the direction along the carrying direction (sub scanning direction, X direction, X1 'direction) Column direction) of the pixel data in the two-dimensional direction. This pixel data is 1-bit data of "0" or "1". The pixel data of " 0 " means that the intensity of the spot light SP irradiated to the substrate P is made low, and the pixel data of " 1 " means that the intensity of the spot light SP irradiating the substrate P is high . Therefore, when the pixel data is " 0 ", the control device 14 turns off the driving signal to be applied to the drawing optical element AOM, and when the pixel data is " 1 & ) Is turned on. The pixel data for one column of the pattern data corresponds to one drawing line SL (SL1 to SL6), and the intensity of the spot light SP projected onto the substrate P along one drawing line SL (SL1 to SL6) Is modulated in accordance with pixel data for one column. This one-column pixel data is referred to as serial data DL. That is, the pattern data is bit map data in which the serial data DL in the first column, the serial data DL2 in the first and second columns, ..., and the serial data DLn in the nth column are arranged in the column direction.

The body frame UB of Fig. 2 holds a plurality of light introducing optical systems BDU (BDU1 to BDU6) and a plurality of scanning units U (U1 to U6). The main frame UB includes a first frame Ub1 for holding a plurality of light introducing optical systems BDU (BDU1 to BDU6) and a second frame Ub2 for holding a plurality of scanning units U (U1 to U6) ). The first frame Ub1 is provided above the plurality of light introducing optical systems BDU (BDU1 to BDU6) on the upper side (+ Z1 'direction side) of the plurality of scanning units U (U1 to U6) held by the second frame Ub2 ). The first frame Ub1 supports the plurality of light introducing optical systems BDU (BDU1 to BDU6) downward (on the -Z1 'direction side). The odd number of light-introducing optical systems BDU1, BDU3 and BDU5 correspond to the positions of the odd-numbered scanning units U1, U3 and U5 and are located on the upstream side (-X1 ') in the carrying direction of the substrate P with respect to the center plane Poc1. Direction side) of the first frame Ub1 so as to be arranged in one line along the Y direction. The even number of light-introducing optical systems BDU2, BDU4 and BDU6 correspond to the positions of the even-number scan units U2, U4 and U6 and are located on the downstream side in the conveying direction of the substrate P with respect to the center plane Poc1 ) Are supported on the first frame Ub1 so as to be arranged in one row along the Y direction. The first frame Ub1 is provided with a plurality of openings Hs (Hs1 to Hs6) corresponding to the plurality of light introducing optical systems BDU (BDU1 to BDU6). The beam LB emitted from each of the plurality of light introducing optical systems BDU (BDU1 to BDU6) is not blocked by the first frame Ub1 by the plurality of openings Hs (Hs1 to Hs6) (U (U1 to U6)).

The second frame Ub2 is provided in the scanning unit U (U1 to U6) so that each scanning unit U (U1 to U6) can be rotated by a small amount (for example, about 2 degrees) around the irradiation axis Le (U1 to U6) are rotatably held. Even when the scanning units U (U1 to U6) are rotated around the irradiation axis Le (Le1 to Le6), the position in the XtY plane in which the beam LB is incident on the scanning units U (U1 to U6) The relative positional relationship with the center position in the XtY plane of the drawing lines SL (SL1 to SL6) corresponding to the respective scanning units U (U1 to U6) does not change. Therefore, even when the scanning units U (U1 to U6) rotate, the scanning units U (U1 to U6) project the spot light SP of the beam LB onto the substrate P, SL (SL1 to SL6). The drawing lines SL (SL1 to SL6) rotate about the irradiation axes Le (Le1 to Le6) by rotation of the scanning units U (U1 to U6) And can be inclined within a small range (for example, +/- 2 DEG) with respect to the state parallel to the axis. The rotation of the scanning units U (U1 to U6) around the irradiation axis Le (Le1 to Le6) is performed by an actuator (not shown) under the control of the control device 14. [

The alignment microscope ALG (ALG1 to ALG4) of the exposure apparatus EX detects the position information (mark position information) of the alignment marks MK (MK1 to MK4) formed on the substrate P shown in Fig. 3 And is provided along the Y direction. The marks MK (MK1 to MK4) are formed on the substrate P in such a manner that a predetermined pattern to be drawn in the exposure area W on the irradiated surface of the substrate P and a pattern of the base pattern already formed on the substrate P or the substrate P And is a reference mark for alignment (alignment). The alignment microscope ALG (ALG1 to ALG4) picks up the marks MK (MK1 to MK4) on the substrate P supported on the circumferential surface of the rotary drum DR. The alignment microscope ALG (ALG1 to ALG4) is disposed on the upstream side (-) of the substrate P in the conveying direction of the substrate P with respect to the spot light SP of the beam LB projected on the irradiated surface of the substrate P from the first pattern exposure section EXH1. X direction side).

The alignment microscope ALG (ALG1 to ALG4) has a light source for projecting illumination light for alignment onto the substrate P, and an image pickup element such as a CCD or CMOS for picking up the reflected light. The image pickup signal picked up by the alignment microscope (ALG (ALG1 to ALG4)) is sent to the control device 14. [ The control device 14 detects the position information on the substrate P of the marks MK (MK1 to MK4) based on the image pickup signal. In general, the detection area (imaging range) on the substrate P by this kind of alignment microscope (ALG) is 1 mm (the length of one side of the square and square) or less and the position of the mark MK The measurement (the displacement amount of the mark, etc.) is limited within the detection area (imaging range). In order to specify the actual mark position on the substrate P, an encoder system for precisely measuring the rotational angle position (i.e., the moving position and the moving amount of the substrate P) of the rotating drum DR is provided, The measurement information output from the encoder system at the moment the image of the mark MK is captured within the detection area (imaging range) of the ALG is also sampled. Thus, the positions of the marks MK (MK1 to MK4) on the substrate P are obtained in association with the rotation angle position of the rotary drum DR. The alignment microscope (ALG), or the alignment microscope (ALG) and the encoder system correspond to the mark detection unit of the present invention. The alignment light for alignment is light in a wavelength band that has little sensitivity to the photosensitive functional layer of the substrate P, for example, light having a wavelength of about 500 to 800 nm.

Marks MK1 to MK4 are provided around the respective exposure regions W. [ These marks MK (MK1 to MK4) may be formed together at the time of forming the pattern of the first layer (base layer formed by the first exposure). For example, when the first layer pattern is exposed, a pattern for marks MK (MK1 to MK4) may also be exposed around the exposure region W where the pattern is exposed. The patterns for the marks MK (MK1 to MK4) may be formed on the substrate P before exposing the first layer pattern. In this case, from the step of exposing the pattern for the first layer, the alignment operation can be performed in consideration of the deformation of the substrate P or the like, using the marks MK (MK1 to MK4). Further, the mark MK may be formed in the exposure region W. [ For example, marks (MK (MK1 to MK4)) may be formed along the outline of the exposure area W as the exposure area W. [

The alignment microscope ALG1 picks up a mark (MK) 1 existing in the observation region (detection region) Vw1. Similarly, the alignment microscopes ALG2 to ALG4 pick up images of the marks MK2 to MK4 existing in the observation regions Vw2 to Vw4. Therefore, the plurality of alignment microscopes ALG1 to ALG4 are provided in the order from the -Y direction side of the substrate P to the alignment microscopes ALG1 to ALG4, corresponding to the positions of the plurality of marks MK1 to MK4. The alignment microscopes ALG (ALG1 to ALG4) are arranged in the circumferential direction of the observation regions Vw (Vw1 to Vw4) of the exposure positions (imaging lines SL1 to SL6) and the alignment microscopes (ALG1 to ALG4) The distance is set shorter than the length of the exposure area W in the X direction. The number and arrangement of the alignment microscopes ALG provided in the Y direction can be changed according to the number of the marks MK formed in the width direction of the substrate P or the arrangement thereof. The size of the observation area Vw1 to Vw4 on the irradiated surface of the substrate P is set in accordance with the size of the marks MK1 to MK4 and the alignment accuracy (position measurement precision), but is about 100 to 500 μm square .

The first pattern exposure unit EXH1 detects the positional information of the marks MK (MK1 to MK4) detected using the alignment microscope (ALG (ALG1 to ALG4)) under the control of the controller 14 (Pattern data) drawn by the scanning units U (U1 to U6) on the basis of the position information corresponding to the rotation angle position of the projection optical system DR do. In the case where the exposure area W is not inclined or there is no distortion, a plurality of marks MK (MK1 to MK4) are arranged in a rectangular shape as shown in Fig. 3. When the exposure area W is inclined or distorted, The arrangement of the marks MK (MK1 to MK4) also tilts or is distorted accordingly. Therefore, when the exposure region W is inclined or distorted, it is necessary to adjust the position of the spot light SP irradiated on the substrate P accordingly. For example, when a predetermined pattern is newly superimposed on the base pattern layer, it is necessary to tilt or distort a predetermined pattern to be drawn in accordance with the inclination or distortion of all or a part of the base pattern layer. Therefore, the control device 14 determines the position of the spot light SP projected onto the substrate P by the first pattern exposure section EXH1 in accordance with the design information, based on the positional information of the marks MK (MK1 to MK4) Adjust the position.

For example, the control device 14 rotates the scanning units U (U1 to U6) around the irradiation axis Le (Le1 to Le6) to adjust the tilt angles of the drawing lines SL (SL1 to SL6) The position of the spot light SP may be adjusted. If the inclination of the drawing lines SL (SL1 to SL6) is adjusted, the ends of the drawing lines SL (SL1 to SL6) neighboring to each other in the Y direction are separated or the end portions are overlapped. Y direction. Thus, the scanning length (magnification in the main scanning direction) of each of the drawing lines SL (SL1 to SL6) and the width of the main scanning direction of each of the drawing lines SL (SL1 to SL6) so that the ends of the neighboring drawing lines SL are aligned in the Y- It is necessary to correct at least one of the positions.

The scanning length of the drawing lines SL (SL1 to SL6) can be changed by adjusting the magnification in the main scanning direction of the drawing lines SL (SL1 to SL6). As a result, the position of the pulse-shaped spot light SP projected onto the substrate P in the Y direction is finely adjusted. The magnification adjustment in the main scanning direction can be performed by, for example, adjusting the light emission frequency Fe of the light source device 20. [ The number of spot lights SP (pulse light) irradiated along one drawing line SL (SL1 to SL6) is set to a constant relationship with the number of pixels arranged in the main scanning direction (for example, two pulses per pixel , The pulse interval of the spot light SP projected along the main scanning direction is shortened if the light emission frequency Fe is slightly increased. As a result, the pattern drawn in the drawing lines SL (SL1 to SL6) becomes shorter overall in the main-scan direction. On the other hand, if the emission frequency Fe is slightly lowered, the pulse interval of the spot light SP projected along the main scanning direction becomes longer, and as a result, the pattern drawn by the drawing lines SL (SL1 to SL6) becomes longer overall in the main scanning direction . In addition, by providing an optical member (not shown) for magnification correction by a lens element or the like for correcting the magnification in the scanning direction in the scanning units U (U1 to U6), the scanning of the imaging lines SL You can also change the length.

In addition, by slightly shifting each drawing line SL (SL1 to SL6) in the main scanning direction, the pattern exposed by the drawing lines SL (SL1 to SL6) can be corrected in the main scanning direction. An origin sensor that optically detects the scanning start timing of the spot light SP scanned by the polygon mirror PM of the scanning unit U (U1 to U6) is provided in each of the scanning units U (U1 to U6) (Not shown) are provided. The origin sensor is a detector that receives the reflected light of the measurement light projected onto the reflection surface of the polygon mirror PM and outputs the origin signal. The origin sensor outputs the origin signal when the angular position of the reflecting surface of the polygon mirror PM becomes a predetermined angular position before the spot light SP is projected at the scanning start point of the drawing line SL (SL1 to SL6). Normally, the drawing optical element (AOM (AOM1 to AOM6)) is switched based on the serial data DL of the pattern data to start drawing after a predetermined time Ts elapses from the output of the origin signal. However, by changing the time Ts from the output of the origin signal to the start timing of switching of the optical elements for drawing (AOM (AOM1 to AOM6) based on the serial data DL), each of the drawing lines SL (SL1 to SL6) Can be shifted in the main scanning direction.

For example, if the time Ts is shortened, the timing of starting the drawing operation by the spot light SP is advanced. Therefore, the drawing lines SL1, SL3, and SL5 are shifted toward the + Y direction and the drawing lines SL2, SL4, (See Fig. 3). Conversely, when the time Ts is elongated, the drawing lines SL1, SL3, and SL5 are shifted toward the -Y direction and the drawing lines SL2, SL4, and SL6 are shifted toward the + Y direction (see FIG. In this manner, the position of the spot light SP projected onto the substrate P in the main scanning direction is finely adjusted corresponding to the design information (pattern data). The position adjustment of each of the drawing lines SL (SL1 to SL6) in the main scanning direction is performed by shifting the beam LB passing through each of the scanning units U (U1 to U6) in a direction corresponding to the main scanning direction , An optical member for changing the angle (for example, a tilting parallel plate glass, an angle adjustable reflection mirror, or the like). The position adjustment of the drawing line SL in the main scanning direction is performed together with the correction of the tilt of each drawing line SL and the correction of the magnification of each drawing line SL in the main scanning direction so that the position of each of the drawing lines SL (SL1 to SL6) Deterioration of joint accuracy is suppressed. As described above, the position adjustment of the drawing lines SL (SL1 to SL6), which are the scanning trajectories of the spot light SP, is performed by correcting the inclination of the drawing line SL, the magnification correction in the main scanning direction of the drawing line SL, Correction, etc., and information about their position adjustment (error, correction amount, etc.) is referred to as adjustment information.

Next, the second pattern exposure section EXH2 will be described. 4 is a diagram showing an example of the configuration of the second pattern exposure unit EXH2. The second pattern exposure unit EXH2 is configured to expose the exposure region W of the substrate P supported while being transferred by the rotary drum DR by rotating a cylindrical reflective mask (hereinafter, a cylindrical mask) And an image of a pattern (mask pattern) of the cylindrical mask M is projected. An exposure apparatus using such a reflective mask is disclosed in, for example, International Publication No. 2013/094286 pamphlet, and will be briefly described below.

The second pattern exposure section EXH2 includes a light source device 22 and a plurality of illumination modules IL1 to IL6 constituting the illumination optical system and a rotary holding drum And a plurality of projection modules PL (PL1 to PL6) constituting a projection optical system. The cylindrical mask M is, for example, a reflective mask using a metal cylindrical body. The cylindrical mask M is formed on the surface of the base material of the cylindrical body which extends in the Y direction and has a central axis AX1 extending in a direction intersecting the direction of action of gravity and a cylindrical outer circumferential surface of a certain radius from the central axis AX1 . The peripheral surface of the cylindrical mask M is a mask surface P1 on which a predetermined mask pattern is formed. A mask pattern P1 is patterned in a high reflection area for reflecting the illumination light with high efficiency and a low reflection area for not reflecting the reflection light or reflecting it at a very low efficiency. Since the base material is a cylindrical body made of metal, such a cylindrical mask M can be produced at low cost. A mask pattern corresponding to all or a part of one pattern layer may be formed in the cylindrical mask M. A plurality of mask patterns corresponding to one pattern layer may be formed. That is, a plurality of mask patterns corresponding to one pattern layer in the circumferential direction may be repeatedly formed on the cylindrical mask M.

The rotation maintaining drum DR2 holds the cylindrical mask M so that the central axis AX1 of the cylindrical mask M becomes the center of rotation. The rotation maintaining drum DR2 rotates about the central axis AX1 by giving a rotational torque from a rotation drive source (not shown) (for example, a motor or a deceleration mechanism) controlled by the control device 14. [ Thereby, the cylindrical mask M is scanned. The rotation direction of the rotation maintaining drum DR2 is opposite to the rotation direction of the rotation drum DR and the rotation maintaining drum DR2 rotates in synchronization with the rotation of the rotation drum DR. That is, the rotational speed of the rotation maintaining drum DR2 is the same as the rotational speed of the rotary drum DR. A plane passing through the center axis AXo of the rotary drum DR and the center axis AX1 of the cylindrical mask M and extending in the Y direction is called a center plane Poc2. In Fig. 4, the direction orthogonal to the Y direction in the center plane Poc2 is referred to as Z2 ', and the direction orthogonal to the center plane Poc2 is referred to as X2'. -Z2 'direction is the direction side in which gravity acts and the + X2' direction is the side of the substrate P in the carrying direction (scanning direction).

The light source device 22 generates light (illumination light) EL such as ultraviolet light to be irradiated onto the substrate P. [ The light source device 22 includes, for example, a lamp light source such as a mercury lamp, a laser diode, and a solid light source such as a light emitting diode. The illumination light generated by the light source device 22 is guided to a plurality of illumination modules IL (IL1 to IL6) via a light guide member such as an optical fiber (not shown), for example. The illumination modules IL (IL1-IL6) include a plurality of optical members such as, for example, an integrator optical system, a rod lens, or a fly-eye lens. The illumination modules IL (IL1 to IL6) irradiate the illumination light EL (hereinafter referred to as illumination luminous flux EL1), which is an energy line of a uniform illumination distribution, to a plurality of illumination regions IR IR1 to IR6). The illumination module IL1 irradiates the illumination luminous flux EL1 to the illumination area IR1 on the cylindrical mask M. [ Similarly, the illumination modules IL2 to IL6 irradiate the illumination luminous flux EL1 to the illumination areas IR2 to IR6 on the cylindrical mask M. [ The plurality of illumination modules IL (IL1 to IL6) have the same configuration.

A plurality of polarization beam splitters PBS (PBS1 to PBS6) and a plurality of? / 4 wave plates QW (QW1 to QW6) are provided between a plurality of illumination modules IL (IL1 to IL6) ). The polarization beam splitter PBS (PBS1 to PBS6) reflects light of linearly polarized light (for example, P polarized light) polarized in a predetermined direction and forms a straight line polarized in a direction orthogonal to the predetermined direction And transmits the light of polarized light (for example, S polarized light). Therefore, the illumination luminous flux EL1 (for example, P-polarized light) from the illumination modules IL1 to IL6 reflects the polarizing beam splitters PBS (PBS1 to PBS6) QW (QW1 to QW6)) and is irradiated onto the cylindrical mask M. [ The reflected light of the illumination luminous flux EL1 reflected by the cylindrical mask M (hereinafter referred to as the imaging luminous flux EL2) is reflected by the quarter wave plates QW (QW1 to QW6) and the polarizing beam splitters PBS (PBS1 to PBS6) And is incident on the projection modules PL (PL1 to PL6). The plurality of projection modules PL1 to PL6 are arranged to project a plurality of projection areas PA (PA1 to PA6) on the surface to be irradiated on the substrate P supported by the rotary drum DR, Lt; / RTI > The illumination light flux EL1 from the illumination module IL and the imaging light flux EL2 which is the reflected light are incident on the polarization beam splitter PBS1 and the? / 4 wave plate QW1. Similarly, the illumination luminous flux EL1 from the illumination modules IL2 to IL6 and the imaging luminous flux EL2 which is the reflected light thereof are incident on the polarization beam splitters PBS2 to PBS6 and the? / 4 wave plates QW2 to QW6.

The plurality of illumination modules IL (IL1 to IL6) are arranged in two rows in the circumferential direction of the cylindrical mask M with the center plane Poc2 interposed therebetween. The odd number of illumination modules IL1, IL3 and IL5 are arranged in one row along the Y direction from the upstream side (-X2 'direction side) of the scanning direction (rotation direction) of the cylindrical mask M with respect to the center plane Poc2 . The even number of illumination modules IL2, IL4 and IL6 are arranged in one row along the Y direction from the downstream side (+ X2 'direction side) of the scanning direction (rotation direction) of the cylindrical mask M with respect to the center plane Poc2 .

5 (A) is a plan view of the illumination regions IR (IR1 to IR6) on the cylindrical mask M held by the rotation maintaining drum DR2 as seen from the -Z2 'direction side. As shown in Fig. 5 (A), the plurality of illumination regions IR (IR1 to IR6) are arranged in two rows in the circumferential direction (X2 'direction) of the cylindrical mask M with the center plane Poc2 interposed therebetween. The illumination regions IR1, IR3 and IR5 are arranged on the cylindrical mask M on the upstream side (-X2 'direction side) in the scanning direction of the cylindrical mask M and the downstream side (+ X2 The illumination regions IR2, IR4, and IR6 are disposed on the cylindrical mask M. The illumination regions IR1 to IR6 are elongated trapezoidal regions each having a parallel short side and a long side extending in the width direction (Y direction) of the cylindrical mask M. At this time, the odd-numbered illumination regions IR1, IR3, and IR5 and the even-numbered illumination regions IR2, IR4, and IR6 are disposed on the inner side so that their short sides face each other and the long side is located on the outer side.

The odd number of illumination regions IR1, IR3, and IR5 are arranged in one line at predetermined intervals along the Y direction. Likewise, the even-numbered illumination regions IR2, IR4, and IR6 are arranged in one line at predetermined intervals along the Y direction. At this time, the illumination region IR2 is arranged between the illumination region IR1 and the illumination region IR3 in the Y direction. The illumination region IR3 is arranged between the illumination region IR2 and the illumination region IR4 in the Y direction. The illumination region IR4 is disposed between the illumination region IR3 and the illumination region IR5 with respect to the Y direction, and the illumination region IR5 is disposed between the illumination region IR4 and the illumination region IR6 with respect to the Y direction.

Each of the illumination regions IR (IR1 to IR6) is arranged such that the triangular portions of the adjacent trapezoidal illumination regions IR overlap (overlap) with respect to the X2 'direction. Each of the illumination regions IR (IR1 to IR6) is a trapezoidal region, but may be a rectangular region. The cylindrical mask M has a pattern forming area A1 in which a mask pattern is formed and a pattern non-forming area A2 in which no mask pattern is formed. The pattern non-formation area A2 is a low reflection area for absorbing the illumination luminous flux EL1. In this manner, the plurality of illumination regions IR (IR1 to IR6) are arranged so as to cover the entire width (full width) in the Y direction of the pattern formation region A1. This pattern formation area A1 corresponds to the exposure area W of the substrate P. [

The plurality of projection modules PL (PL1 to PL6) project an imaging light beam EL2 from the cylindrical mask M onto a plurality of projection areas PA (PA1 to PA6) positioned on the irradiated surface of the substrate P. [ The projection module PL1 projects the imaging light flux EL2 from the illumination area IR1 of the cylindrical mask M onto the projection area PA1. Similarly, the projection modules PL2 to PL6 project the imaging light flux EL2, which is the reflection light from the illumination areas IR2 to IR6 of the cylindrical mask M, to the projection areas PA2 to PA6. Thus, the projection modules PL (PL1 to PL6) project the image of the mask pattern in the illumination areas IR (IR1 to IR6) on the cylindrical mask M onto the projection area PA (PA1 to PA6 ).

The plurality of projection modules PL are disposed corresponding to the plurality of illumination modules IL (IL1 to IL6). The plurality of projection modules PL (PL1 to PL6) are arranged in two rows in the circumferential direction of the rotary drum DR with the center plane Poc2 therebetween. The odd number of projection modules PL1, PL3 and PL5 correspond to the positions of the odd number of illumination modules IL1, IL3 and IL5 and are located on the upstream side in the conveying direction of the substrate P with respect to the center plane Poc2 ), They are arranged in one row along the Y direction. The even-numbered projection modules PL2, PL4 and PL6 correspond to the positions of the even-numbered illumination modules IL2, IL4 and IL6 and are located on the downstream side (+ X2 'direction side) in the conveying direction of the substrate P with respect to the center plane Poc2. In one row along the Y direction.

5B is a plan view of the projection areas PA (PA1 to PA6) on the surface to be irradiated of the substrate P supported on the rotary drum DR as viewed from the + Z direction. A plurality of projection areas PA (PA1 to PA6) on the substrate P are arranged so as to correspond to a plurality of illumination areas IR (IR1 to I6) on the cylindrical mask M. [ That is, the plurality of projection areas PA (PA1 to PA6) are arranged in two rows in the circumferential direction (X2 'direction) of the rotary drum DR with the center plane Poc2 therebetween. The projection areas PA1, PA3 and PA5 are arranged on the substrate P on the upstream side (-X2 'direction side) in the carrying direction of the substrate P and the downstream side (+ X2' direction side The projection areas PA2, PA4, and PA6 are disposed on the substrate P of the projection area PA. The projection areas PA (PA1 to PA6) are parallel to each other and extend in the width direction (Y direction) of the substrate P (rotary drum DR) and have an elongated trapezoidal shape having a long side. At this time, the odd-numbered projection areas PA1, PA3, and PA5 and the even-numbered projection areas PA2, PA4, and PA6 are disposed inside so that their short sides are opposed to each other.

The odd-numbered projection areas PA1, PA3, and PA5 are arranged in one line at predetermined intervals along the Y direction. Likewise, even-numbered projection areas PA2, PA4, and PA6 are arranged in one line at predetermined intervals along the Y direction. At this time, the projection area PA2 is disposed between the projection area PA1 and the projection area PA3 in the Y direction. The projection area PA3 is disposed between the projection area PA2 and the projection area PA4 with respect to the Y direction. The projection area PA4 is disposed between the projection area PA3 and the projection area PA5 with respect to the Y direction, and the projection area PA5 is disposed between the projection area PA4 and the projection area PA6 with respect to the Y direction.

Each projection area PA (PA1 to PA6) is arranged such that the triangular portions of the trapezoidal projection area PA adjacent to each other overlap (overlap) with respect to the X2 'direction. Each of the projection areas PA (PA1 to PA6) is a trapezoidal area, but it may be a rectangular area. In this manner, the plurality of projection areas PA (PA1 to PA6) are arranged so as to cover the entire width of the exposure area W set on the substrate P in the Y direction.

The illumination regions IR1 to IR6 on the mask surface P1 of the cylindrical mask M are scanned in the -X2 'direction by the scanning (rotation) of the cylindrical mask M, and by the rotation of the rotary drum DR The projection areas PA (PA1 to PA6) on the irradiated surface of the substrate P are scanned in the -X2 'direction. Therefore, the image forming beam EL2 on the mask pattern in the illumination regions IR (IR1 to IR6) scanned in the -X2 'direction is scanned in the -X2' direction by the projection modules PL (PL1 to PL6) To the projection area PA (PA1 to PA6) on the surface to be irradiated of the substrate (P). Thereby, the mask pattern formed on the mask surface P1 of the cylindrical mask M is exposed to the exposure region W of the substrate P.

Although not described in detail, each projection module PL (PL1 to PL6) is provided with a projection area PA (PA1 to PA6) projected onto the substrate P, a position (magnification) (Not shown) capable of adjusting at least one of a tilt and a tilt. This makes it possible to adjust at least one of the position, the magnification (magnification) and the slope with respect to the Y direction on the substrate P on the mask pattern in the illumination region IR (IR1 to IR6) on the cylindrical mask M . The pattern exposure unit of the multi-lens system for correcting the projected image of the mask pattern when the projection exposure using the cylindrical mask M is disclosed in the above-mentioned pamphlet of International Publication No. 2013/094286. The control device 14 controls the correction optical systems of the projection modules PL1 to PL6 based on the positional information of the marks MK (MK1 to MK4) detected using the alignment microscopes ALG (ALG1 to ALG4) The image of the mask pattern to be projected may be corrected. The correction optical system is driven by an actuator (not shown) under the control of the control device 14. [

Fig. 6 is a diagram showing an example of a configuration of the second pattern exposure unit EXH2 using the transmission type cylindrical mask by another method. The second pattern exposure unit EXH2 shown in Fig. 6 exposes a predetermined pattern to the substrate P by a so-called proximity method. The same components as those in Fig. 4 are denoted by the same reference numerals. The second pattern exposure unit EXH2 in Fig. 6 has a light source unit 24 and a rotation maintaining drum DR2 for holding a transmissive cylindrical mask M. Fig. In the case of Fig. 6, the rotation maintaining drum DR2 is made up of a circular tube made of quartz or the like having a constant thickness, and a mask pattern patterned with a light shielding layer (chromium or the like) is formed on the outer circumferential surface of the circular tube . The cylindrical mask M is provided so that the gap with the rotation maintaining drum DR2 is minute. The light source device 24 irradiates the illumination light (illumination light flux) EL, which is a direct energy ray, onto the substrate P supported by the rotary drum DR while rotating the cylindrical mask M in the scanning direction (rotation direction) The illumination luminous flux EL according to the image of the mask pattern formed on the cylindrical mask M is projected onto the irradiated surface of the substrate P. [ The illumination luminous flux EL emitted from the light source device 24 to the substrate P is irradiated in the -Z2 'direction on the center plane Poc2. The rotation maintaining drum DR2 rotates in a direction opposite to the rotation direction of the rotary drum DR and rotates in synchronization with the rotation of the rotary drum DR.

As described above, the two types of second pattern exposure units EXH2 have been described, but the method of the second pattern exposure units EXH2 is not limited to this. That is, the second pattern exposure section EXH2 is provided on an exposure area W of the substrate P in such a manner that the image of the mask pattern formed on the mask surface P1 of the cylindrical mask M (image due to reflected light or transmitted light) Type exposure apparatus that performs scanning exposure with respect to the exposure apparatus.

7 is a view showing the configuration of the exposure system 30 in the first embodiment. The exposure system 30 includes an exposure apparatus EX, an actual pattern information generation unit 32, and a mask generation apparatus 34. [ 7, the actual pattern information generating section 32 is shown as being separate from the exposure apparatus EX and the mask generating apparatus 34. However, the actual pattern information generating section 32 may be an exposure apparatus EX) or the mask creating device 34. [ Since the exposure system 30 according to the first embodiment is a method in which the tendency of the deformation of the exposure area W formed on the substrate P is detected by the marks MK (MK1 to MK4), since the substrate P is a flexible sheet substrate. And a mask having a new pattern to be exposed superimposed on the exposure region W in consideration of the tendency of the deformation of the exposure region W. In this system, 2 pattern exposure unit EXH2), the productivity of the substrate P is improved while increasing the overlapping accuracy of the substrate P during the overlap exposure.

7, the control device (output section) 14 of the exposure apparatus EX is sequentially detected by an alignment microscope (ALG) in order to create a mask pattern corresponding to a pattern to be exposed in the exposure region W The position information of the marks MK (MK1 to MK4) and adjustment information (tilt correction of the drawing line SL, correction of magnification in the main scanning direction of the drawing line SL, shift correction in the main scanning direction of the drawing line SL Adjustment amount) to the actual pattern information generation unit 32. The actual pattern information generation unit 32 generates the actual pattern information. The "pattern to be exposed in the exposure area W" is a pattern actually exposed by the first pattern exposure unit EXH1, that is, a pattern after the projection position (imaging position) of the spot light SP is adjusted. That is, in order to create a mask pattern corresponding to a pattern actually exposed by the first pattern exposure section EXH1, the control device 14 sets at least one of positional information and adjustment information of the marks MK (MK1 to MK4) . The adjustment information is obtained by adjusting the position of the spot light SP projected onto the substrate P corresponding to the design information (pattern data) based on the positional information of the marks MK (MK1 to MK4) (Inclination angle of the drawing line SL, magnification in the scanning direction of the drawing line SL, shift amount in the scanning direction of the drawing line SL, and the like). When outputting the adjustment information, the control device 14 outputs information on the position adjustment of the spot light SP of each of the scanning units U (U1 to U6).

The actual pattern information generating section 32 includes a computer, a storage medium storing a program or the like, and the computer functions as an actual pattern information generating section 32 of the present embodiment by executing the program. The actual pattern information generating section 32 corrects the design information (pattern data) based on at least one of the position information and the adjustment information of the transmitted marks MK (MK1 to MK4) (Pattern data) for creating a mask pattern corresponding to a pattern to be exposed in the W is generated. That is, the actual pattern information generating section 32 corrects the design information (pattern data) based on at least one of the position information and the adjustment information of the marks MK (MK1 to MK4) and outputs the pattern information to the first pattern exposure section EXH1 To generate actual pattern information (pattern data) for creating a mask pattern for obtaining a pattern actually exposed. Design information " is design information (pattern data) used in the first pattern exposure section EXH1 of the exposure apparatus EX. The pattern data (design information) is stored in the storage medium of the actual pattern information generating section 32. [ The actual pattern information generating section 32 outputs the generated actual pattern information to the mask generating apparatus 34. [ The actual pattern information generating unit 32 generates actual pattern information which is obtained by correcting design information (pattern data) of each of the scanning units U (U1 to U6).

The mask preparing device 34 forms a mask pattern corresponding to the actual pattern information on the mask substrate MP by exposing a pattern corresponding to the actual pattern information to the cylindrical mask substrate MP. The mask substrate MP on which the mask pattern corresponding to the actual pattern information is formed becomes the cylindrical mask M used for the second pattern exposure section EXH2. The mask preparing device 34 is provided with an exposure apparatus EX2. The exposure apparatus EX2 includes a third pattern exposure unit EXH3 and a rotation maintenance drum DR3 for holding a cylindrical mask substrate MP having a photosensitive functional layer (e.g., a photoresist layer) And a control device 36. [ The control device 36 is a computer for controlling the exposure by the third pattern exposure section EXH3 and the rotation of the rotation maintaining drum DR3. The third pattern exposure section EXH3 has the same configuration as the first pattern exposure section EXH1. Therefore, the third pattern exposure section EXH3 will be described by properly designating the reference numerals assigned to the structures of the first pattern exposure section EXH1. The rotation maintaining drum DR3 has the same configuration as that of the rotation maintaining drum DR2 and holds the substrate for mask MP so that the central axis AX1 of the substrate MP for mask becomes the center of rotation.

Each of the scanning units U (U1 to U6) of the third pattern exposure unit EXH3 is controlled by the control unit 36 so that the mask substrate MP held by the rotation holding drum DR3 and rotating (Main scanning) the spot light SP in one dimension in the main scanning direction (Y direction) on the mask substrate MP while projecting the spot light SP of the energy beam LB onto the mask substrate MP. At this time, the control device 36 gives the actual pattern information (pattern data) sent from the actual pattern information generating section 32 to the third pattern exposure section EXH3, The pattern corresponding to the pattern information is exposed on the irradiated surface of the substrate for mask MP. That is, under the control of the control device 36, the third pattern exposure section EXH3 modulates (turns on / off) the intensity of the spot light SP scanned in the main scanning direction on the basis of the actual pattern information at high speed, And exposes a pattern corresponding to the pattern information. In the third pattern exposure section EXH3, this actual pattern information becomes design information for exposing the pattern to the mask substrate MP. Modulation of the intensity of the spot light SP is performed in the third pattern exposure section EXH3 by using the imaging optical elements AOM (AOM1 to AOM1) of the light introducing optical systems BDU (BDU1 to BDU6) provided in the same manner as the first pattern exposure section EXH1, AOM6)). The pulsed beam LB emitted by the light source device 20 of the third pattern exposure section EXH3 may be an electron beam or a light beam such as ultraviolet rays.

Thus, the third pattern exposure section EXH3 modulates the intensity of the spot light SP projected on the irradiated surface of the mask substrate MP, based on the actual pattern information. Therefore, the third pattern exposure section EXH3, Is a mask pattern for obtaining a pattern actually exposed by the first pattern exposure section EXH1.

Here, although not shown in the drawing, the mask creating apparatus 34 may be formed by a film forming apparatus and an exposure apparatus EX2 for forming a photosensitive functional layer (for example, a photoresist layer) on the surface of a substrate MP for a mask A developing device for performing development with respect to the mask substrate MP subjected to the exposure process, and an etching device for etching the mask substrate on which development has been performed. A film forming apparatus, an exposure apparatus EX2, a developing apparatus, and an etching apparatus perform processing on the mask substrate MP to form a cylindrical mask M on which a mask pattern corresponding to actual pattern information is formed. That is, the mask substrate MP becomes a cylindrical mask in which the mask pattern is held in a cylindrical shape. When the mask substrate MP is made of a flexible transparent resin sheet or sheet glass or the like, it is preferable that the sheet-like mask substrate MP is placed on the cylindrical rotary holding drum DR2 in the exposure apparatus EX Attach to the outer surface. When the mask substrate MP is directly formed on the outer peripheral surface of the cylindrical base material to form a cylindrical mask, the entire rotation maintaining drum DR2 is exchanged.

The control device 14 of the exposure apparatus EX is required to perform the superimposing exposure for the first time on the substrate P sent from the supply roll mounted on the device manufacturing system 10, It is possible to perform exposure of a pattern to be superimposed by the first pattern exposure unit EXH1 capable of flexibly deforming the pattern to be imaged. That is, based on the positional information of the marks MK (MK1 to MK4) detected using the alignment microscopes ALG (ALG1 to ALG4), the spot (s) projected onto the substrate P The position of the light SP is finely adjusted to draw the pattern. The control device 14 sequentially stores at least one of the adjustment information on the position adjustment of the spot light SP and the position information of the detected marks MK (MK1 to MK4).

Thereafter, when it is determined that the exposure area W has a certain deformation tendency based on the positional information of the marks MK (MK1 to MK4), the control device 14 displays a series of marks MK (MK1 to MK4), and the adjustment information of the spot light SP which is position-adjusted based on the position information, to the actual pattern information generating section 32. [ When the positional information of the marks MK (MK1 to MK4) reflects a certain tendency of the exposure region W over a plurality of exposure regions W arranged in the longitudinal direction, the marks MK across the plurality of exposure regions W, At least one of the position information and the adjustment information of the pattern information is output to the actual pattern information generating section 32. [ When a certain error tendency is shown in the positional information of the marks MK (MK1 to MK4), the exposure region W also has a certain deformation (distortion) tendency.

Then, the actual pattern information generation section 32 generates actual pattern information based on at least one of the position information and the adjustment information of the mark MK. The mask creating device 34 creates a cylindrical mask M having a mask pattern corresponding to the actual pattern information. That is, when a certain tendency (regularity) is seen in the deformation of the exposure area W (linear distortion, high order distortion of the second to third order), the mask preparing device 34 applies the mask pattern reflecting the regularity to the cylindrical mask (M). At this time, the third pattern exposure section EXH3 of the mask producing apparatus 34 is formed by the exposure apparatus. The intensity of the spot light SP being scanned in the main scanning direction is modulated based on the actual pattern information, thereby exposing the mask substrate MP to a pattern corresponding to the actual pattern information.

The cylindrical mask M created by the exposure system 30 is attached to the second pattern exposure section EXH2 and the second pattern exposure section EXH2 is mounted under the control of the control device 14, And pattern exposure is performed on the substrate P using the prepared cylindrical mask M. [ That is, the mask pattern formed on the cylindrical mask M is projected onto the surface to be irradiated of the substrate P. [ The control device 14 stops the exposure by the first pattern exposure section EXH1 before the exposure by the second pattern exposure section EXH2 is started. Thereby, after the cylindrical mask M is mounted on the second pattern exposure section EXH2, exposure is performed only by the second pattern exposure section EXH2, so that the conveyance speed of the substrate P can be made faster And the processing time of the pattern exposure can be shortened (productivity can be improved). As a result, the formation time of the pattern layer is shortened.

The control device 14 also detects the positional information of the marks MK (MK1 to MK6) by using the alignment microscope (ALG (ALG1 to ALG4)) during the exposure of the second pattern exposure section EXH2 do. When the scanning type exposure apparatus shown in FIG. 4 is used as the second pattern exposure section EXH2, the control device 14 controls the exposure of the marks MK (MK1 to MK4) during the exposure of the second pattern exposure section EXH2. The image of the mask pattern projected onto the substrate P may be corrected by driving the correction optical system provided in the projection modules PL (PL1 to PL6) of the second pattern exposure section EXH2 based on the positional information of the substrate P . In this step, the mask pattern formed on the cylindrical mask M mounted on the second pattern exposure section EXH2 is formed so as to be substantially superposed on the two-dimensional deformation of the base pattern layer in the exposure region W on the substrate P (Corrected) from the design pattern. Therefore, a small amount of driving amount of the correction optical system provided in each of the projection modules PL (PL1 to PL6) is sufficient, which also contributes to raising the conveyance speed of the substrate P. [

In addition, the control device 14 determines whether or not the position of the mark MK (MK1 to MK4) detected in turn in the exposure operation of the second pattern exposure section EXH2 (during the scanning exposure of the substrate P) (The correction limit by the correction optical system of the second pattern exposure section EXH2, or the like), the exposure by the second pattern exposure section EXH2 is stopped do. That is, when the tendency of the deformation of the exposure region W exceeds the permissible range, the mask pattern formed on the cylindrical mask M can no longer be dealt with. Thus, the control device 14 resumes the exposure by the first pattern exposure section EXH1. Thereby, the pattern to be drawn can be flexibly deformed in accordance with the conveying state of the substrate P and the deformation of the exposure region W, and the exposure processing of the substrate P can be continued. When the exposure is performed in the first pattern exposure section EXH1, the control device 14 lowers the transfer speed of the substrate P to a speed at which the pattern can be drawn in the first pattern exposure section EXH1 .

However, the exposure processing in the second pattern exposure section EXH2 using the cylindrical mask M is completed for one exposure region W, and the second exposure through the first pattern exposure section EXH1 In the arrangement of the first pattern exposure section EXH1 and the second pattern exposure section EXH2 shown in Fig. 1, when the exposure process is started, the front end portion of the next exposure area W is exposed to the outside of the first pattern exposure section (The positions of the drawing lines SL1 to SL6) by the exposure unit EXH1. Therefore, when the exposure processing in the second pattern exposure section EXH2 is completed, the rotation of the rotary drum DR and the conveying operation of the substrate conveying mechanism 12 are performed so that the substrate P does not slide on the rotary drum DR Lt; / RTI > Thereafter, the rotation of the rotary drum DR or the operation of the substrate transport mechanism 12 is reversed so as to transport the substrate P by a predetermined distance in the reverse direction, and thereafter, the first pattern exposure section EXH1 (Forward direction) at a predetermined transporting speed suitable for the substrate P to be transported.

Thereafter, when the deformation of the exposure area W estimated based on the positional information of the marks MK (MK1 to MK4) detected using the alignment microscope ALG (ALG1 to ALG4) has a constant tendency , The control device 14 outputs at least one of the position information and adjustment information of the marks MK (MK1 to MK4) to the actual pattern information generating section 32. [ The actual pattern information generator 32 generates the actual pattern information again, and the mask generating device 34 generates the actual pattern information generated again as the design information on the other mask substrate MP, Thereby forming a mask pattern. The control device 14 stops the exposure by the first pattern exposure section EXH1 again and starts exposure using the mask substrate MP newly created in the second pattern exposure section EXH2.

Thus, the exposure apparatus EX according to the first embodiment has the alignment microscope ALG (ALG1 to ALG4) for detecting the position of the mark MK (MK1 to MK4) on the substrate P on which the electronic device is to be formed, And the spot light SP of the beam LB corresponding to the pattern data (design information) to the detected marks MK (MK1 to MK4) to expose the pattern on the exposure region (device formation region) W on the substrate P, (MK (MK1 to MK4)) and the position information of the adjustment information on the position adjustment and the marks (MK (MK1 to MK4)) on the basis of the positional information of the marks (Output unit) 14 for outputting a mask pattern corresponding to a pattern to be exposed. Therefore, it becomes possible to create a mask pattern reflecting the actually exposed pattern (the drawing pattern after being adjusted to correspond to the deformation of the exposure area W on the substrate P) by the first pattern exposure section EXH1.

The exposure apparatus EX also uses a mask pattern created based on at least one of the adjustment information output from the controller 14 and the position information of the marks MK (MK1 to MK4) And a second pattern exposure unit EXH2 for projecting an illumination luminous flux EL according to an image of the image. Thus, the second pattern exposure section EXH2 that performs exposure using the cylindrical mask M can expose a pattern actually exposed in the first pattern exposure section EXH1 of the maskless exposure. That is, even when the first pattern exposure section EXH1 is not used, the second pattern exposure section EXH2 can be exposed by a mask pattern adjusted (corrected) in the same manner as the pattern actually exposed in the first pattern exposure section EXH1 Processing can be executed.

The second pattern exposure section EXH2 deforms the image of the mask pattern to be projected based on the positional information of the detected marks MK (MK1 to MK4). Thus, even when the exposure region W is deformed due to a change in the conveying state of the substrate P during the exposure of the second pattern exposure unit EXH2, if the deformation is within the permissible range (within the correction limit) It becomes possible to expose the pattern in accordance with the modified exposure region W. [

When the tendency of deformation of the exposure area W estimated based on the positional information of the detected marks MK (MK1 to MK4) during exposure by the second pattern exposure section EXH2 is changed over a predetermined allowable range , The exposure operation by the second pattern exposure section EXH2 is stopped and the exposure operation is switched to the exposure operation by the first pattern exposure section EXH1. The timing of the switching is performed by using the function of reversing the substrate P , And one exposure area W may be under exposure processing in the second pattern exposure section EXH2.

The first pattern exposure unit EXH1 and the second pattern exposure unit EXH2 expose a pattern on a sheet-like substrate P supported on the outer peripheral surface of one rotary drum DR. Thus, the conveying state of the substrate P on which the pattern is exposed by the first pattern exposure section EXH1 and the second pattern exposure section EXH2 (the state in which the substrate P is held in tight contact with the rotary drum DR) is the same . Therefore, the overlapping accuracy between the pattern exposed by the first pattern exposure section EXH1 and the exposure area W (basic pattern) on the substrate P, the pattern exposed by the second pattern exposure section EXH2, P) on the exposure area W (base pattern) on the surface of the substrate W is substantially the same, and the quality deviation of the manufactured electronic device can be suppressed.

The actual pattern information generating section 32 generates the actual pattern information again if the tendency of deformation of the exposure region W estimated based on the positional information of the detected marks MK (MK1 to MK4) exceeds the allowable range , And the mask creating device 34 forms a mask pattern on the other mask substrate MP based on the actual pattern information generated again. Thus, pattern exposure by the second pattern exposure section EXH2 is continued by using the newly prepared mask substrate MP (cylindrical mask M). Therefore, even when the roll length (total length of the substrate P) reaches several Km, continuous exposure processing can be performed without substantially stopping the conveyance of the substrate P, and productivity is improved.

The first pattern exposure section EXH1 may be any one that exposes in a maskless manner. Therefore, the first pattern exposure unit EXH1 may be a device that exposes a predetermined pattern corresponding to the imaging data using a digital micromirror device (DMD).

[Modifications]

The first embodiment may be modified as follows.

Modified Example 1 In the first embodiment, the first pattern exposure section EXH1 and the second pattern exposure section EXH2 are configured to expose a pattern on the substrate P supported by the same rotary drum DR The rotary drum DR supporting the substrate P on which the exposure is performed by the first pattern exposure section EXH1 and the substrate P on which the exposure is performed by the second pattern exposure section EXH2 are supported The rotary drum DR may be different.

Fig. 8 is a diagram showing the configuration of the exposure apparatus EXa in Modification 1. Fig. The same components as those in the first embodiment are denoted by the same reference numerals, and a description thereof will be omitted, and only a part different from the above embodiment will be described. The substrate transport mechanism 12a of the exposure apparatus EXa includes an edge position controller EPC, a drive roller R1, a tension adjustment roller RT1 A rotary drum DR (DRa), a tension adjusting roller RT2, a rotary drum DR (DRa), a tension adjusting roller RT3, and a driving roller R3. The substrate P taken out from the edge position controller EPC is driven by the driving roller R1, the tension adjusting roller RT1, the rotary drum DRa, the tension adjusting roller RT2, the rotary drum DRb, (RT3), and the drive roller (R3), and then sent to the processing apparatus PR2.

The two rotary drums DRa and DRb have the same configuration as the rotary drum DR described in Figs. 1 to 6. 8, the rotary drum DRa is arranged on the upstream side (-X direction side) in the carrying direction of the substrate P, and the center axis AXo and the shaft Sft thereof are denoted by AXo1 and Sft1 . The rotary drum DRb is disposed on the downstream side (+ X direction side) in the conveying direction of the substrate P, and the center axis AXo and the shaft Sft thereof are represented by AXo2 and Sft2. Similarly to the tension adjustment rollers RT1 and RT2, the tension adjustment roller RT3 is also pressed in the -Z direction. The tension adjustment rollers RT1 and RT2 apply a predetermined tension to the substrate P wound on the rotary drum DRa in the longitudinal direction and the tension adjustment rollers RT2 and RT3 are wound on the rotary drum DRb A predetermined tension is applied to the substrate P in the longitudinal direction. Thus, the tension in the longitudinal direction applied to the substrate P held by the rotating drums DRa and DRb is stabilized within a predetermined range.

The first pattern exposure section EXH1 is provided above the rotary drum DRa (on the + Z direction side) and the second pattern exposure section EXH2 is provided above the rotary drum DRb (on the + Z direction side). Thus, the first pattern exposure section EXH1 can perform exposure to the substrate P supported by the rotary drum DRa, and the second pattern exposure section EXH2 can support the rotary drum DRb The substrate P can be exposed. In Fig. 8, Poc1 passes through the central axis AXo1 of the rotary drum DRa and is a surface extending in the Z direction. Poc2 passes through the central axis AXo2 of the rotary drum DRb and extends in the Z direction.

As described above, the rotary drum DR supporting the substrate P on which the exposure is performed by the first pattern exposure section EXH1 and the substrate P on which the exposure is performed by the second pattern exposure section EXH2 The degree of freedom in arrangement of the first pattern exposure section EXH1 and the second pattern exposure section EXH2 is improved.

The alignment microscopes ALGa (ALGa1 to ALGa4) capture the marks MK (MK1 to MK4) on the substrate P supported on the rotary drum DRa and the alignment microscopes ALGb (ALGb1 to ALGb4) And marks MK (MK1 to MK4) on the substrate P supported on the rotary drum DRb. The alignment microscopes (ALGa and ALGb) have the same configuration as the alignment microscope (ALG) of the first embodiment. The first pattern exposure unit EXH1 detects the position of the spot light SP corresponding to the design information on the basis of the positional information of the marks MK (MK1 to MK4) detected using the alignment microscopes ALGa (ALGa1 to ALGa4) And the pattern drawing is performed by the raster scanning method while adjusting. When the second pattern exposure section EXH2 is a scanning type exposure apparatus using the cylindrical mask M shown in Fig. 4, the second pattern exposure section EXH2 uses the alignment microscope (ALGb (ALGb1 to ALGb4) (MK (MK1 to MK4)) detected based on the position information of the mark (MK (MK1 to MK4)) detected by using the position information of the projected mask pattern and the shape of the projected image (Magnification, rotation). The determination as to whether or not the tendency of deformation of the exposure area W on the substrate P exceeds the permissible range can be made by checking the marks MK (MK1 to MK4) detected using the alignment microscope (ALGa (ALGa1 to ALGa4) And the positional information of the marks MK (MK1 to MK4) detected using the alignment microscope (ALGb (ALGb1 to ALGb4)).

Modified Example 2 In the first embodiment and the first modified example, the first pattern exposure section EXH1 is arranged on the upstream side (-X direction side) of the substrate P in the carrying direction, and the second pattern exposure section (The + X direction side) in the conveying direction of the substrate P, but the arrangement relationship may be reversed. That is, the first pattern exposure section EXH1 and the second pattern exposure section EXH2 (EXH2) are arranged so that the first pattern exposure section EXH1 is positioned on the downstream side in the carrying direction of the substrate P from the second pattern exposure section EXH2 ) May be disposed.

(Variation 3) In the first embodiment and each modified example described above, the first pattern exposure section EXH1 and the second pattern exposure section EXH2 are arranged on the outer peripheral surface of the rotary drum DR (DRa, DRb) Pattern exposure is performed on the substrate P which is curvedly supported along the direction of the substrate P. However, pattern exposure may be performed on the substrate P supported in a planar shape. The second pattern exposure unit EXH2 of Modification Example 3 may be a scanning type exposure apparatus (scanning stepper) using a planar mask, or a step-and-repeat type projection exposure apparatus (stepper). The scanning stepper synchronously moves the plane mask and the substrate P in the X direction to scan and expose the imaging light beam EL2 along the mask pattern of the plane mask with respect to the substrate P. [ The stepper exposes the mask pattern to the exposure area W in a state in which the plane mask and the substrate P are stationary, exposes the mask pattern in a batch state in a state where the substrate P is moved stepwise and is stopped again. In the case of using the second pattern exposure unit EXH2 in which the flat mask is mounted as described above, the substrate (blank) MP for the mask formed in the mask making apparatus 34 is formed by supporting the mask pattern in a planar shape It becomes a parallel flat plate of quartz or the like.

(Modification 4) In the first embodiment and each modification described above, in order to correspond to the deformation of the exposure area W (or the substrate P) estimated based on the positional information of the marks MK (MK1 to MK4) The drawing lines SL (SL1 to SL6) in the first pattern exposure section EXH1 are tilted with respect to the Y axis, the scanning length (magnification) of the drawing lines SL (SL1 to SL6) To SL6 in the main scanning direction, the scanning position of the spot light SP projected onto the substrate P is finely adjusted. In the modified example 4, in addition to these methods or alternatively, in correspondence with the deformation of the exposure area W (or the substrate P) estimated based on the positional information of the marks MK (MK1 to MK4) (Original design data of the pattern) may be corrected to generate pattern data (correction design information). The first pattern exposure section EXH1 uses the generated correction design information (bitmap data) to modulate the intensity of the spot light SP being scanned. By correcting the original design information (original pattern data) itself, the position of the pattern to be imaged on the substrate P by the scanning of the spot light SP is corrected as a result. In this case, the generated correction design information is also sent to the actual pattern information generating section 32. The actual pattern information generating section 32 generates correction pattern design information based on only the sent correction design information or the position of the marks MK (MK1 to MK4) And actual pattern information is generated using at least one of information and adjustment information and correction design information. At this time, the actual pattern information generating section 32 may generate actual pattern information by reordering the correction design information using at least one of the position information and the adjustment information of the marks MK (MK1 to MK4).

[Second Embodiment]

Figs. 9 and 10 are plan views of the configuration of the exposure apparatus EXb according to the second embodiment as viewed in the Z direction. The same components as those in the first embodiment are denoted by the same reference numerals, and a detailed description thereof will be omitted, and the differences from the first embodiment will be described. The exposure apparatus EXb is provided with a transfer device for transferring the substrate P in a predetermined tension state in the X direction. The substrate P is either curved or supported by the rotary drum DR at the exposure position, And is supported in a flat shape by a flat stage (for example, a flat holder that supports the substrate P by the fluid bearing layer). As shown in Fig. 9, the exposure apparatus EXb of the present embodiment has a maskless system first pattern exposure unit EXH1 in which six projection modules U1 'to U6' using a DMD are arranged in a staggered arrangement, And a second pattern exposing unit EXH2 using a transmissive cylindrical mask M (as shown in Fig. 6) in which a mask pattern is formed on the outer peripheral surface of a rotation sustaining drum DR2 that rotates around the axis AX1. The first pattern exposure section EXH1 and the second pattern exposure section EXH2 are arranged in the Y direction (the width direction orthogonal to the longitudinal direction of the substrate P) on the exposure section support frame 200, Are respectively guided to the linear guide portions 200a and 200b extending in the Y direction of the exposure section support frame 200 and are movable in the Y direction. As a configuration for supporting the substrate P in a flat shape by the flat stage, for example, the configuration disclosed in International Publication No. 2013/150677 may be used.

Therefore, in the present embodiment, either the first pattern exposure section EXH1 or the second pattern exposure section EXH2 is slid in the Y direction so as to face the substrate P, Exposure process can be selected. FIG. 9 shows a state at the time of maskless exposure in which the first pattern exposure section EXH1 is opposed to the substrate P, and FIG. 10 shows a state at the time of mask exposure when the second pattern exposure section EXH2 is opposed to the substrate P Lt; / RTI > The four alignment microscopes ALG1 to ALG4 are arranged on the upstream side in the carrying direction of the substrate P with respect to the exposure position on the substrate P and are provided with marks MK (MK1 to MK4). As the first pattern exposure unit EXH1 of the maskless type using the DMD, for example, the structure disclosed in International Publication No. 2008/090942 can be used, and the second patterned mask M using the transmissive cylindrical mask As the light portion EXH2, for example, a proximity type exposure mechanism disclosed in International Publication No. 2013/136834 can be used.

The first pattern exposure section EXH1 of the present embodiment is configured such that while the substrate P is being sent at a constant speed in the X direction (sub-scan direction), a two-dimensional distribution of locally projected light corresponding to a pattern to be drawn Are dynamically modulated in the DMD. At this time, a signal for driving each of the plurality of micromirrors of the DMD is made by correcting the original design information (CAD information) by the amount of distortion caused by the deformation of the exposure region W or the like estimated. Therefore, when the state change of the signal for driving each micromirror of the DMD and the movement position of the substrate P in the sub-scan direction (or the movement position of the mark MK) are stored in correspondence with each other, The actual pattern information generator 32 of FIG. 7 can generate the information (actual correction design information after correction) of the actual pattern actually superimposed and exposed in the exposure area W. FIG. Thus, like the first embodiment, the cylindrical mask M to be attached to the second pattern exposure section EXH2 can be immediately created by the mask creating device 34 in Fig.

According to the present embodiment, while the exposure processing of the substrate P is carried out by using either the first pattern exposure section EXH1 or the second pattern exposure section EXH2, the other is to carry the substrate P (Left) side of the path (left side). Therefore, maintenance (maintenance) of the pattern exposure units EXH1 and EXH2 is facilitated. In addition, in the second pattern exposure section EXH2, the mounting operation (replacement) of the cylindrical mask M is facilitated, and the mask changer mechanism for performing the automatic replacement of the mask can be easily assembled. In the first pattern exposure section EXH1, a calibration unit section for measuring and calibrating the mutual positional relationship of the light distributions projected from each of the six projection modules U1 'to U6' (On the -Z direction side) of the first pattern exposure unit EXH1 positioned as shown in FIG.

[Modifications]

The second embodiment may be modified as follows.

(Modification 1) Fig. 11 is a view showing a plane arrangement of the exposure apparatus EXb according to the modification 1 of the second embodiment. In Modification 1, the first pattern exposure section EXH1 and the second pattern exposure section EXH2 are integrally provided in the exposure section support turret 2100 rotatable about the axis 210a. When the first pattern exposure section EXH1 and the second pattern exposure section EXH2 are switched, the exposure section support turret 2100 is raised in the + Z direction by a predetermined distance (for example, about 1 cm) Clockwise or counterclockwise about the axis 210a by 180 degrees. Thus, in the case of the configuration in which the rotation is carried out by rotating the exposure support portion 2100, the first pattern exposure section EXH1 and the second pattern exposure section (with the accuracy of +/- 0.1 mu m) EXH2) can be mechanically set to a predetermined position. This modification 1 also facilitates the maintenance (maintenance) work of the pattern exposure sections EXH1 and EXH2 and the mounting (replacement) work of the cylindrical mask M, and the mask changer mechanism and the calibration unit section can be easily assembled .

(Modification 2) Fig. 12 is a front view of the schematic structure of the exposure apparatus EXb according to Modification 2 of the second embodiment. In the second modified example, the first pattern exposure section EXH1 and the second pattern exposure section EXH2 are supported by the guide section 220a of the exposure section support frame 220 extending linearly in the X direction. The guide portion 220a functions as a rail linearly formed in the X direction and each of the first pattern exposure section EXH1 and the second pattern exposure section EXH2 is movable in the X direction along the guide section 220a . In the case of Modification 2, the pattern exposure units EXH1 and EXH2 are moved in the carrying direction of the substrate P (the moving direction of the substrate P when the substrate P traverses the central face Poc2) I was able to switch the exposure mode. 9 to 11, either one of the first pattern exposure section EXH1 and the second pattern exposure section EXH2 is disposed outside the transfer path of the substrate P when viewed in the XY plane It is possible to reduce the footprint (installation area) as a whole of the exposure apparatus EXb.

[Third embodiment]

Fig. 13 shows the overall configuration of the device manufacturing apparatus according to the third embodiment, and Fig. 14 is a diagram showing the configuration of the exposure unit incorporated in the device manufacturing apparatus of Fig. The device manufacturing apparatus of the present embodiment is provided with a supply portion (SU) for taking out a flexible long substrate (P) wound around a supply roll (FR1) and supplying it to a process device (processing portion) An exposure apparatus EXC for exposing the substrate P processed in the processing apparatus PR1, a processing apparatus (processing section) PR2 for performing a post-process on the post-exposure substrate P, And a recovery unit PU for winding the substrate P on the recovery roll FR2. The exposure apparatus EXC includes, for example, three exposure units EXc1, EXc2 and EXc3 as shown in Fig. 14, and has an exposure control unit ECT for collectively controlling them.

The process apparatus PR1 includes a rotary drum RS1 for supporting the substrate P from the supply unit SU on the outer circumferential surface and moving the substrate P in the longitudinal direction and a rotary drum RS1 for supporting the substrate P supported on the rotary drum RS1 A die code head DH for applying a liquid photosensitive material (resist, photosensitive silane coupling material, etc.), a solvent removal HS1 for removing a solvent from the applied photosensitive material, ) Is heated and dried by a heater or hot air or the like. The substrate P having the photosensitive functional layer formed of the photosensitive material by the processing apparatus PR1 is subjected to exposure processing in the exposure apparatus EXC and then wet processing is performed on the photosensitive functional layer in the processing apparatus PR2. The process apparatus PR2 includes a liquid tank WB1 for wet chemical processing with respect to the photosensitive functional layer, a liquid tank WB2 for cleaning the chemically processed substrate P with pure water, And a drying unit HS3 for heating and drying the cleaned substrate P.

As shown in Fig. 14, the exposure apparatus EXC of the present embodiment has a proximity type exposure unit EXc1 similar to that of Fig. 6 using a transmission type cylindrical mask M1, Exposure section EXc3 of the projection system and exposure section EXc1, EXc2 and EXc3 in the same manner as in Fig. 4 using maskless exposure unit EXc2 and reflection type cylindrical mask M2, R12, R13, R14, R15, R16, R17 and R18 for conveying the substrate P from the carriage PR1. The exposure unit EXc1 includes a drive mechanism (not shown) that rotates the cylindrical mask M1 around the center axis AX1 and a driving mechanism that is disposed inside the cylindrical mask M1 to irradiate the substrate P with a light source A rotary drum (substrate support member) DRA rotatable about a central axis AXa while supporting the substrate P on the outer peripheral surface (support surface), a rotary drum And a scale original SD of an encoder system for measuring a rotation angle position (a movement amount of the substrate P) of the rotary drum DRa, a drive mechanism (not shown) for moving the substrate P in a longitudinal direction by rotating the rotary drum DRa, And an alignment system (ALGA) composed of the alignment microscopes (ALG1 to ALG4) shown in Fig. 1 or Fig. The exposure unit EXc1 is disclosed in, for example, the pamphlet of International Publication No. 2013/136834 and the pamphlet of International Publication No. 2013/146184, and a detailed description thereof will be omitted.

2, the exposure unit EXc2 rotates around the center axis AXb while supporting the substrate P from the exposure unit EXc1 via the rollers R13 and R14 of the carry unit on the outer peripheral surface (support surface) A driving mechanism (not shown) for moving the substrate P in the longitudinal direction by rotating the rotary drum DRB and a driving mechanism for rotating the rotary drum DRB at a rotation angle position (substrate P), an alignment system (ALGB) composed of the alignment microscopes (ALG1 to ALG4) shown in Figs. 1 and 3 and an alignment system (ALGB) of the encoder system for measuring the intensity And a plurality of scanning units U1 to U6 of a beam scanning system for condensing the imaging beam (exposure light) into spot light SP and scanning the substrate P by scanning the pattern. The exposure unit EXc2 is specifically described in, for example, the pamphlets of International Publication No. 2015/152217 and International Publication No. 2015/152218, so that detailed explanation is omitted here, U6 of the scanning units U1 to U6 are arranged in the order of the drawing positions of the patterns drawn by the scanning units U1 to U6 on the basis of the arrangement states of the marks MK1 to MK4 (see FIG. 3) measured by the alignment system ALGB, (Distortion) of the exposure area W on the substrate P by deforming or expanding the substrate P itself supported on the rotary drum DRb by correcting the imaging magnification High-precision patterning (superposing exposure, etc.) is possible.

Exposure section EXc3 is provided with a drive mechanism (not shown) that rotates reflective cylindrical mask M2 around the central axis AX1 and a roller R15 and R16 of the carry section, A rotary drum (substrate support member) DRC rotatable about a central axis AXc while supporting the substrate P sent from the rotary drum DRC on the outer peripheral surface (support surface) A scale original SD of an encoder system for measuring a rotation angle position (a movement amount of the substrate P) of the rotary drum DRC and a scale original SD of an encoder system for moving the rotary drum DRC in the longitudinal direction, An alignment system ALGC composed of microscopes ALG1 to ALG4 and a plurality of projection modules (projection systems) for projecting and exposing the imaging light (exposure light) reflected by the pattern formed on the cylindrical mask M2 onto the substrate P, (PL1 to PL6). Since the exposure unit EXc3 of the multi-lens projection type is disclosed in, for example, International Publication No. 2014/073535 pamphlet, a detailed description is omitted, but a plurality of Dimensional distortion of the substrate P (or the exposure area W) based on the arrangement state of the marks MK1 to MK4 of the projection modules PL1 to PL6 The shift correction system of the projected image, the micro-rotation correction system of the projected image, and the magnification correction system of the projected image are adjusted. Such a correction system is also disclosed in International Publication No. 2014/073535 pamphlet.

The rotary drums DRa, DRb, and DRC provided in the exposure units EXc1, EXc2, and EXc3 are made to have the same dimensions, and the optical characteristics of the outer peripheral surface as the surface characteristics, P) are considered to be coincident with each other. Any of the shape characteristics, optical characteristics, and friction characteristics as the surface characteristics may be the same. Here, the shape characteristic includes the curvature (diameter), roughness, hardness, and material of the outer peripheral surface, and the friction characteristic includes the friction coefficient of the outer peripheral surface. The optical characteristics include reflectance for exposure light (beam, illumination beam, imaging beam, etc.). The detection areas (Vw1 to Vw4 in Fig. 3) of the respective alignment systems (ALGA, ALGB, ALGC) from the position (contact start position) where the substrate P starts to be supported by the respective rotary drums DRa, DRb, The distance between the substrate P and the substrate P is set to be substantially the same. The same encoder system (scale original disc SD) for measuring the rotation angle of each rotary drum DRa, DRb, DRC is also used. The rollers R12, R14 and R16 are configured as tension rollers for setting the tension applied to the substrate P on the upstream side of each of the rotary drums DRa, DRb and DRC to be approximately equal. However, in the exposure unit in which the exposure processing of the substrate P is not performed among the exposure units EXc1, EXc2, EXc3, the tension imparted to the substrate P need not be set equal to the tension in the other exposure units.

The exposure apparatus EXC of the present embodiment is an exposure apparatus EXC according to the present embodiment which is optimized in consideration of the conveyance state of the substrate P, the deformation state of the exposure region W of the electronic device pattern set on the substrate P or the substrate P, Exposure processing of the substrate P is performed using at least one of the exposure units EXc1, EXc2, and EXc3 having different exposure methods (three in this example) so that good pattern exposure can be performed by the exposure method. For example, when the substrate P sent from the processing apparatus PR1 is a PET film on which a copper foil or an aluminum foil is vapor-deposited and is a first layer exposure (first exposure) substrate on which no pattern is formed, There is almost no deformation of the projection optical system P, so either the proximity EXc1 of the proximity system or the exposure unit EXc3 of the projection system is used in consideration of the productivity. In addition, when the base pattern layer is already formed in the exposure region W of the substrate P sent from the processing apparatus PR1, the overlapping exposure (second exposure) is performed. Therefore, The exposure unit EXc2 of the projection system or the exposure unit EXc3 of the projection system is selected. However, in the first exposure or the second exposure, it is possible to expose the substrate P using two of the exposure units EXc1, EXc2, and EXc3.

The proximity type exposure processing using the cylindrical mask M1 by the exposure unit EXc1 is advantageous in that the minimum dimension (minimum line width) of the pattern to be exposed is relatively large, not less than several tens of micrometers, There is an advantage that high productivity (tact) can be obtained. On the other hand, in the exposure processing by the exposure unit EXc3 of the multi-lens projection system using the cylindrical mask M2, a resolution (as small as several micrometers) as a minimum dimension (minimum line width) In addition to the load, high superposition precision can be obtained by correcting the projected image for each of the multiple lenses (projection modules PL), and there is an advantage that relatively high productivity (tact) can be obtained. On the other hand, in the exposure process by the maskless exposure unit EXc2, a high resolution of about several micrometers is obtained as the minimum dimension (minimum line width), and a high resolution of the substrate P (or the exposure region W) The productivity (tact) tends to be lower than that of the exposure unit EXc1 and the exposure unit EXc3, while the correction capability for deformation is higher than that of the exposure unit EXc3 of the projection system.

The exposure control section ECT shown in Fig. 13 takes into consideration the characteristics of the respective exposure sections EXc1, EXc2 and EXc3 as described above. In the exposure control section ECT shown in Fig. 13, . The first exposure mode simply uses one of the three exposure units EXc1, EXc2, and EXc3, the second exposure mode uses the two exposure units EXc1 and EXc2 in combination, and the third exposure mode uses two The exposure units EXc2 and EXc3 are used in combination. In the first exposure mode, when the substrate P is the first exposure, when the degree of fineness of the pattern to be exposed in the first exposure is high (minimum dimension is small), any one of the exposure unit EXc2 and the exposure unit EXc3 Lt; / RTI > When the fineness of the pattern to be exposed in the first exposure is low (minimum dimension is large), either the exposure unit EXc1 or the exposure unit EXc3 is used. However, when the exposure unit EXc1 or the exposure unit EXc3 is used, a cylindrical mask M1 or M2 provided with a pattern for first exposure is prepared. Further, in the first exposure mode, when the substrate P is the second exposure, when the overlapping accuracy is prioritized, either the exposure unit EXc2 or the exposure unit EXc3 is used. When the overlapping accuracy is not strict, either the exposure unit EXc1 or the exposure unit EXc3 is used in the case of the second exposure. However, when the exposure unit EXc1 or the exposure unit EXc3 is used, a cylindrical mask M1 or M2 on which a pattern for a second exposure is formed is prepared. The cylindrical mask M1 or M2 for second exposure can be formed in the same manner as in the first embodiment (Fig. 7) described above.

In the second exposure mode, a part of the pattern to be transferred to the exposure region W on the substrate P is exposed in a proximity manner by the exposure unit EXc1, and then another portion of the pattern to be transferred to the exposure region W is exposed to light And exposed by a maskless method by the light portion EXc2. The second exposure mode can be applied to both the first exposure and the second exposure. A part of the pattern exposed in the exposure unit EXc1 is a portion having a low degree of fineness (the minimum dimension is large) (The smallest dimension is small), or a portion in which a high superposition accuracy is required. That is, a cylindrical mask M1 is prepared by disposing a pattern for first exposure or second exposure into a portion having a low degree of fineness (or a superimposed precision) and a portion having a high degree of fineness (or overlapping accuracy) A pattern of a portion having a high degree of fine (or superimposed precision) is prepared as drawing data of the exposure unit EXc2. Therefore, in the second exposure mode, exposure is performed twice with respect to the exposure region W of the substrate P over time, and exposure is performed twice with the pattern first exposed in the exposure portion EXc1 and the second exposure in the exposure portion EXc2 The pattern is aligned with the necessary precision based on the positional information of the marks MK1 to MK4 on the substrate P detected in each of the alignment systems (ALGA and ALGB). In the case where the second exposure is performed in the second exposure mode, a second exposure pattern is formed on the cylindrical mask M1 mounted on the exposure unit EXc1. The cylindrical mask M1 is the same as the first embodiment ).

In the third exposure mode, a part of the pattern to be transferred to the exposure region W of the substrate P is exposed by the exposure unit EXc2 in a maskless manner, and then another portion of the pattern to be transferred to the exposure region W is exposed And is exposed by the projection optical system EXc3. The third exposure mode is also applicable to both the first exposure and the second exposure, but is particularly suitable for the second exposure. A portion of the exposure region W exposed in the exposure unit EXc2 is a portion with a large deformation and another portion of the exposure region W exposed in the exposure unit EXc3 is a portion with a small deformation. That is, the tendency of deformation of the exposure region W on the substrate P is estimated or measured in advance, and a pattern corresponding to a portion (region) having a high degree of deformation is exposed in a maskless manner, Is formed in the cylindrical mask M2 and is exposed by a projection method. Also, in the third exposure mode, the pattern for the second exposure (or the first exposure) is decomposed into a portion having a low degree of fineness and a portion having a high degree of fineness, a pattern having a portion having a low degree of fineness is formed in the cylindrical mask M2, The pattern of the high portion may be prepared as the drawing data of the exposure unit EXc2. The cylindrical mask M2 to be mounted on the exposure unit EXc3 in the third exposure mode can be formed by the first embodiment (Fig. 7).

As described above, according to the present embodiment, a plurality of exposure units (exposure units) having different exposure types are formed in accordance with the degree of fineness, productivity, or superposition accuracy of the pattern when transferring to a long substrate P (exposure region W) EXc1, EXc2, and EXc3 can be selected and subjected to continuous exposure processing, productivity can be ensured while maintaining the quality of the electronic device manufactured on the substrate P. Particularly, when the maskless exposure unit EXc2 is used in combination such as the second exposure mode or the third exposure mode, a part of the pattern in the exposure region W formed in the cylindrical masks M1 and M2 is exposed through the exposure unit EXc2 are set so as to be unexposed on the substrate P. In this case, Therefore, in the case where the portion on the substrate P exposed in the exposure portion EXc2 is limited to the tip end portion or the end portion in the transport direction in the exposure region W, the tip portion and the end portion thereof are exposed in the exposure portion EXc2 The conveying speed of the substrate P can be reduced to a speed suitable for the exposure unit EXc2. That is, the transfer speed of the substrate P in the exposure unit EXc2 is intermittently switched between a speed suitable for the exposure unit EXc2 and a speed suitable for the other exposure unit EXc1 (or EXc3). When the conveying speed of the substrate P in the exposure section EXc2 is intermittently changed as described above, it is possible to change the conveying speed of the substrate P between the roller R13 and the roller R14 shown in Fig. 14 or between the roller R15 and the roller R16 A buffer mechanism (accumulator) capable of accumulating the substrate P over a predetermined length is provided. In this way, even when the maskless exposure unit EXc2 is used in combination, as compared with the case where exposure is performed with the conveyance speed of the substrate P constant at a uniformly low speed suitable for the exposure unit EXc2, Can be improved.

In the present embodiment, the configuration and surface characteristics of the rotating drums DRa, DRb and DRC for supporting and transporting the substrate P at the exposure position, the transporting conditions of the substrate P (the tension of the substrate P The exposure units EXc1, EXc2 and EXc3 can be subjected to exposure processing while the substrate P is supported in the same state. This makes it possible to match the situation of slight deformation or deviation which may occur when the substrate P (or the exposure area W) is supported by the rotary drums DRa, DRb and DRC, The deviation of the quality of the electronic device can be suppressed.

[Modifications]

The third embodiment may be modified as follows.

(Modification Example 1) In the above embodiment, the substrate P (or the exposure region W) measured by the alignment system (ALGB (ALGC)) is exposed at the time of exposure processing of the exposure unit EXc2 (EXc3) (Third) exposure unit EXc2 (EXc3) on the basis of only the deformation information of the substrate (P) on the basis of the deformation information of the substrate (P). However, in the configuration of Fig. 14, for example, the substrate (substrate) P obtained based on the arrangement state of the marks MK1 to MK4 of the substrate P detected by the alignment system (ALGA) of the first exposure unit EXc1 P obtained on the basis of the alignment state of the marks MK1 to MK4 of the substrate P detected by the alignment system ALGB of the second exposure unit EXc2 The relative positional relationship between the imaging beam (exposure light) and the substrate P during the patterning of the substrate P by the second exposure unit EXc2 in addition to the deformation information of the substrate P . Thereby, the second exposure unit EXc2 can grasp the deformation state of the substrate P (exposure region W) before the measurement by the alignment system ALGB just before the exposure, and the correction amount There is a time margin for precise setting and precise modification of the drawing data, and it becomes possible to further reduce the overlapping error.

The deformation information of the substrate P (exposure region W) acquired based on the positional relationship of the marks MK1 to MK4 of the substrate P detected in the alignment system ALGB of the second exposure unit EXc2 (Exposure region W) acquired based on the positional relationship of the marks MK1 to MK4 of the substrate P detected by the alignment system ALGC of the third exposure unit EXc3 to the deformation information of the substrate P The relative positional relationship between the projected image (exposure light) and the substrate P may be corrected when the pattern is projected onto the substrate P by the third exposure unit EXc3. Also in this case, the third exposure unit EXc3 can grasp the deformation state of the substrate P (exposure region W) before the measurement by the alignment system ALGC immediately before the exposure, There is a time margin to be precisely set, and it becomes possible to further reduce the overlapping error. The management of the deformation information and the correction control as described above are instructed by the exposure control unit (ECT) shown in Fig.

(Modification 2) In Fig. 14, the exposure units EXc1, EXc2, and EXc3 constituting the exposure apparatus EXC are arranged in the order of the proximity system, the maskless system, and the projection system , But the order may be any. The cylindrical mask M1 or M2 mounted on the exposure unit EXc1 of the proximity system or the exposure unit EXc3 of the projection system may be formed in the same manner as in the first embodiment (FIG. 7). Only the two exposure units EXc1 and EXc2 with different exposure methods or only the two exposure units EXc2 and EXc3 with different exposure methods are used as in the first embodiment, But may be arranged along the conveying direction of the substrate P. The quality (overlapping accuracy, reproducibility of pattern dimensions, and the like) of the electronic device formed on the sheet-like substrate P by the roll-to-roll method is stable by the manufacturing line The fourth exposure mode in which the exposure unit EXc1 of the proximity system and the exposure unit EXc3 of the projection system are used in combination may be applied. At this time, a pattern portion having a low degree of fineness is formed on the cylindrical mask M1 mounted on the exposure portion EXc1 of the proximity type and a cylindrical mask M2 mounted on the exposure portion EXc3 of the projection system has a fine pattern May be formed and the exposure region W may be exposed by overlapping the two portions. The maskless exposure unit EXc2 includes a digital micromirror device DMD for controlling the posture and position of each of a plurality of micromirrors two-dimensionally arranged based on pattern design information (CAD data, etc.) A method of generating exposure light in which the intensity distribution is modulated according to a pattern and projecting the exposure light onto the substrate P through a projection system, or a so-called maskless method using DMD.

(Modification 3) In the step of pattern exposure (first exposure or second exposure) of a sheet-like substrate P in a roll-to-roll system, a solution (a photoresist liquid, a UV- A sheet film on which a dry film resist layer is formed and a substrate P are passed through a laminator or the like in addition to the substrate P on which the photosensitive layer is formed by applying and drying the photosensitive layer, , And a substrate P on which a dry film resistor layer is electrodeposited is sometimes used. Since the dry film resist layer (hereinafter also referred to as a DFR layer) has a characteristic that when exposed to exposure light in an ultraviolet wavelength band of about 400 nm to 300 nm, transparency is lowered and discolored, It becomes possible to detect the alignment marks as latent images by the alignment systems (ALGB and ALGC) shown in Fig. 14, for example, a part of the pattern exposed on the DRF layer of the substrate P in the exposure section EXc1 provided on the upstream side in the carrying direction of the substrate P, or the alignment mark, Can be detected by the alignment system ALGB of the exposure unit EXc2 on the side of the exposure unit EXc2 or the alignment system ALGC of the exposure unit EXc3. Therefore, by detecting the position of a part of the pattern (or the image of the mark) actually exposed in the exposure area W on the substrate P by the exposure unit EXc1 with the alignment system ALGB (or ALGC) A fine pattern portion exposed to the substrate P by the exposure unit EXc1 and a pattern portion with a high degree of fine exposure exposed to the substrate P by the exposure unit EXc2 (or EXc3) (Can be followed).

The light source apparatuses 20, 22, and 24 provided for each of the exposure units EXc1 to EXc3 described in the third embodiment of FIG. 14 and the modified embodiments described above can be a gas or solid laser light source, a mercury discharge lamp, A high-brightness LED, or the like, or may be a light source of the same type. In the case where a light source device of the same kind or a completely same light source device can be used, the adjustment operation of the light source device, the maintenance operation for maintenance or the replacement (replacement) operation are made common, so that the running cost is suppressed. The alignment system (ALGA) of the exposure unit EXc1, the alignment system ALGB of the exposure unit EXc2, and the alignment system ALGC of the exposure unit EXc3 shown in FIG. 14 are all shown in FIG. 3 And a plurality of alignment microscopes ALG1 to ALG4 arranged at predetermined intervals in the direction of the short side (Y direction) of the substrate P as shown in Fig. In this case, the arrangement relationship of the observation regions (detection regions) Vw1 to Vw4 of the alignment microscopes (ALG1 to ALG4) in the Y direction is set to be the same among the alignment systems (ALGA, ALGB and ALGC) . The arrangement number of the alignment microscope ALG in the Y direction is not limited to four points as shown in Fig. 3, but may be a different arrangement number (at least two points) between the alignment systems (ALGA, ALGB and ALGC).

(Modification 4) As one of electronic devices suitable for manufacturing by the roll-to-roll method, there is a long flexible sheet sensor. Fig. 15 is a schematic view showing a state in which four sheet sensors RSS1, RSS2, and RSS3 are formed on a sheet-like substrate P (PET or PEN) extending in the X direction over a length of several meters to several tens meters or more in the X- RSS3, and RSS4). Each of the four sheet sensors RSS1 to RSS4 includes a plurality of power supply lines Vdd, Vss (GND), and signal lines CBL formed on a substrate P and various sensors, When a device such as a computer chip, a TFT (thin film transistor), a capacitor, or a resistor is formed, it is cut in the Y direction (the width direction of the substrate P) by a cutter device called a slitter. Since each of the sheet sensors RSS1 to RSS4 has the same configuration, the sheet sensor RSS1 will be described in detail.

The sheet sensor RSS1 is embedded in a soil (package) for cultivating crops, for example, and is provided with various sensors such as a water amount, a pH value, a temperature, a nutrient amount (nitrogen component, phosphorus component, etc.) And the measured value is converted into digital data in an electronic device (microcomputer chip or the like) formed in the fine pattern area FPA to provide an information collecting device (data relaying device) mounted at the end of the sheet sensor RSS1 Serial communication is performed through line CBL. By changing the types of sensors formed in the fine pattern area FPA and the measurement algorithms (measurement software) by the microcomputer chip, the sheet sensors RSS1 to RSS4 can detect not only the soil for crops but also the depth ) Direction, the temperature, the flow velocity of the seawater, the seawater component, and the like.

15, the power line Vdd of the positive polarity, the power line Vss (GND) of the negative pole (ground), and the signal line CBL are connected by a copper foil layer having a thickness of several mu m to several tens of mu m The distance from the information collecting device connected to one end of the sheet sensor RSS1 to the other end may reach several tens of meters or more. The width of each line of the power supply lines Vdd, Vss, and signal line CBL may be , So as to reduce the voltage drop (signal loss). On the other hand, the thickness of the electronic circuit wiring pattern formed in the fine pattern area FPA varies depending on the shape and density of the electronic component to be mounted, but is at least several tens of microns to several hundreds of microns. When it is necessary to directly form a plurality of TFTs in the fine pattern area FPA, the line width of the gate lines and the source / drain lines of the TFTs is not more than several tens of microns, preferably not more than 20 microns, ) Is also required.

In this modification, when the sheet sensors RSS1 to RSS4 as shown in Fig. 15 are formed on the substrate P, for example, the length in the X direction arranged at the interval Lsp is Lfa (Lfa < Lsp) A fine pattern in the pattern area FPA is exposed in the exposure part EXc2 (or EXc3) in Fig. 14, and a thick pattern (rough pattern) of the signal line CBL between the fine pattern areas FPA and the power supply lines Vdd, Vss, Is shared by the exposure unit EXc1 in Fig. In this case, a buffer mechanism (accumulator) is provided between the roller R13 and the roller R14 in Fig. V1 represents a conveying speed of the substrate P when the exposure section EXc1 exposes a rough pattern and V2 represents a conveying speed of the substrate P when the exposure section EXc2 performs pattern exposure on the fine pattern area FPA V2 < V1), when the exposure unit EXc2 completes the pattern exposure for one fine pattern area FPA, the rotation speed of the rotary drum DRb of the exposure unit EXc2 is raised, May be sent to the speed V3 which is higher than the conveying speed V1 and lowered to the original conveying speed V2 before the pattern exposure for the next fine pattern area FPA is started. By changing the conveyance speed of the substrate P (the rotation speed of the rotary drum DRb) in this manner, the accumulation length of the substrate P accumulated in the buffer mechanism is suppressed from increasing (or decreasing) with time. On the substrate P, the interval Lsp is about 1 m to several m, and the length Lfa of the fine pattern area FPA is about several centimeters to about ten centimeters.

The sheet sensors RSS1 to RSS4 formed on the substrate P have a multilayer interconnection structure of two or more layers, and a pattern in which a high overlapping accuracy is required between the layers and a part in which overlapping accuracy is low may be exposed (Two of the exposure units EXc1 and EXc2, two of the exposure units EXc2 and EXc3) of the three exposure units EXc1 to EXc3 shown in FIG. 14 , Or the exposure unit EXc1 and the exposure unit EXc3), thereby enabling efficient production. It is necessary to prepare the cylindrical masks M1 and M2 in the production line in which two exposure units EXc1 and EXc3 are arranged in the three exposure units EXc1 to EXc3 shown in Fig. There is a case in which the cost for manufacturing the mask increases, thereby increasing the running cost (production cost). However, since the cylindrical masks M1 and M2 are used, it is possible to increase the conveying speed of the substrate P, and also to superimpose the pattern portion with a fine pattern portion and the coarse and coarse line width, or a pattern portion requiring high overlapping accuracy It is possible to sequentially expose the pattern portion, which may have a low precision, in the exposure region W during one conveyance of the substrate P, so that the productivity (tact) can be increased and the total production cost can be suppressed.

10 ... Device manufacturing systems 12, 12a ... The substrate-
14, 36 ... The control devices 20, 22, 24 ... Light source device
30 ... Exposure system 32 ... The actual pattern information generating unit
34 ... Mask preparation device
ALG, ALG1 to ALG4, ALGa, ALGb ... Alignment microscope
ALGA, ALGB, ALGC ... Alignment system
AX1, AXo, AXo1, AXo2, AXa, AXb, AXc ... Center axis
DR, DRa, DRb, DRA, DRB, DRC, RS1 ... Rotary drum
DR2, DR3 ... The rotation holding drum EL, EL1 ... Illumination beam
EL2 ... Imaging beam
EX, EX2, EXa, EXb, EXC ... Exposure devices EXc1, EXc2, EXc3 ... Exposure
EXH1 ... The first pattern exposure section EXH2 ... The second pattern exposure section
EXH3 ... The third pattern exposure section LB ... beam
MK, MK1 ~ MK4 ... Marks M, M1, M2 ... Cylindrical mask
MP ... Substrate for mask P ... Board
PL, PL1 to PL6 ... Projection module
RSS1, RSS2, RSS3, RSS4 ... Seat Sensor SP ... Spot light
W ... An exposure region (device formation region) Vdd, Vss (GND) ... Power line
CBL ... Signal line FPA ... Fine pattern area

Claims (24)

An exposure apparatus for carrying a flexible long sheet substrate along a long longitudinal direction to expose a pattern for an electronic device on the sheet substrate,
A mark detection unit for detecting mark position information of a plurality of marks formed on the sheet substrate;
A first pattern exposure unit for aligning and projecting an energy line corresponding to design information of the pattern based on the mark position information in order to expose the pattern to a device formation area on the sheet substrate on which the electronic device is to be formed, Wow,
An output unit for outputting at least one of the adjustment information on the position adjustment of the energy line projected onto the device formation region and the mark position information for the purpose of creating a mask pattern corresponding to the pattern to be exposed in the device formation region . The method according to claim 1,
A second pattern for projecting an energy line along an image of the mask pattern to the device formation region using the mask pattern created based on at least one of the adjustment information and the mark position information output from the output unit, An exposure apparatus comprising an exposure unit. The method of claim 2,
And the second pattern exposure unit deforms the image of the mask pattern to be projected based on the mark position information. The method according to claim 2 or 3,
Wherein the second pattern exposure unit starts exposure by an energy line corresponding to the mask pattern when the mask having the mask pattern is formed,
Wherein the first pattern exposure section stops exposure by an energy line corresponding to design information of the pattern before the exposure of the image of the mask pattern by the second pattern exposure section is started. The method of claim 4,
When the tendency of the mark position information detected by the mark detecting unit is changed beyond the allowable range, the first pattern exposure unit resumes the exposure by the energy line corresponding to the design information of the pattern,
Wherein the second pattern exposure unit stops exposure by the energy line corresponding to the mask pattern before the exposure of the pattern by the first pattern exposure unit is resumed. The method according to any one of claims 2 to 5,
A center axis extending in a width direction orthogonal to the longitudinal direction of the sheet substrate and a cylindrical outer circumferential surface having a predetermined radius from the center axis, And a rotary drum for supporting the sheet substrate by rotating the center shaft about the central axis while supporting the sheet substrate in a curved shape in the longitudinal direction,
Wherein the first pattern exposure section and the second pattern exposure section project the energy ray onto the sheet substrate supported on the outer circumferential surface of the rotary drum. The method according to any one of claims 2 to 5,
A central axis extending in a width direction orthogonal to the longitudinal direction of the sheet substrate and a cylindrical outer circumferential surface having a predetermined radius from the central axis and having a portion of the sheet substrate curved in the long- A first rotary drum which rotates about the central axis and conveys the sheet substrate to convey the sheet substrate,
And a second rotary drum provided on a downstream side or an upstream side of the first rotary drum and having the same configuration as the first rotary drum,
Wherein one of the first pattern exposure unit and the second pattern exposure unit projects the energy ray onto the sheet substrate supported on the outer circumferential surface of the first rotary drum, And the energy ray is projected onto the sheet substrate supported on the outer peripheral surface. An exposure system which conveys a flexible long sheet substrate along a long longitudinal direction and exposes a pattern for an electronic device on the sheet substrate,
An exposure apparatus comprising: the exposure apparatus according to any one of claims 1 to 7;
Corrects the design information based on at least one of the adjustment information and the mark position information outputted by the output unit and generates actual pattern information for creating a mask pattern corresponding to the pattern to be exposed in the device formation area An actual pattern information generating unit,
And a mask creating device for creating the mask pattern by using a third pattern exposure section that projects an energy ray based on the design information,
Wherein the mask forming apparatus holds a mask substrate on which the mask pattern is formed and gives the actual pattern information to the third pattern exposure section as the design information to form an energy corresponding to the actual pattern information on the mask substrate The mask pattern corresponding to the actual pattern information is formed on the mask substrate. The method of claim 8,
Wherein the actual pattern information generating unit generates the actual pattern information again when the tendency of the mark position information detected by the mark detecting unit exceeds the allowable range,
Wherein the mask creating device forms the mask pattern on another mask substrate based on the actual pattern information generated again. There is provided a substrate processing method for carrying an elongated flexible sheet substrate along a long longitudinal direction to expose a pattern for an electronic device on the sheet substrate,
A detecting step of detecting mark position information of a plurality of marks formed on the sheet substrate;
An energy line corresponding to the design information of the pattern is formed in the device formation area on the sheet substrate on which the electronic device is to be formed by the first pattern exposure section projecting the energy line according to the design information, A first exposure step of adjusting the position and projecting,
The actual pattern information to be provided for creation of a mask pattern to be exposed in the device formation region based on at least one of the adjustment information on the position adjustment of the energy ray projected onto the device formation region and the mark position information, The substrate processing method comprising: The method of claim 10,
And a mask forming step of forming the mask pattern corresponding to the actual pattern information on the mask substrate by projecting an energy line corresponding to the actual pattern information on the mask substrate held in the second pattern exposure section Lt; / RTI > The method of claim 11,
And a second exposure step of projecting the energy ray according to the mask pattern onto the device formation region using the mask substrate on which the mask pattern is formed. The method of claim 12,
The second exposure process is started after the mask substrate on which the mask pattern has been formed is mounted on the second pattern exposure section,
Wherein the first exposure step stops the exposure of the pattern by the first pattern exposure part before the exposure of the mask pattern by the second exposure step is started. 14. The method of claim 13,
The first exposure process is resumed when the tendency of the mark position information detected in the detection process is changed beyond the allowable range,
Wherein the second exposure step is stopped before the exposure of the pattern by the first exposure step is resumed. 15. The method of claim 14,
The generating step generates the actual pattern information again when the tendency of the mark position information detected in the detecting step is changed beyond the allowable range,
Wherein the mask creating step creates the mask pattern corresponding to the actual pattern information on another mask substrate based on the actual pattern information generated again. The method according to any one of claims 11 to 15,
Wherein the mask substrate is in the form of at least one of a planar mask for supporting the mask pattern in a planar shape or a cylindrical mask for supporting the mask pattern in a cylindrical shape. There is provided a device manufacturing apparatus for forming an electronic device on a substrate by using a plurality of exposure units for irradiating a sheet substrate with exposure light corresponding to a pattern of an electronic device while conveying a long flexible substrate in a long direction,
Wherein the plurality of exposure units are arranged along the transport direction of the substrate,
Wherein each of said plurality of exposure units includes a substrate support member having a support surface for supporting the substrate irradiated with the exposure light according to the pattern of the electronic device in a curved manner in the conveying direction,
Wherein the plurality of exposures are configured to expose the pattern to the substrate in a different exposure scheme. 18. The method of claim 17,
And the surface characteristics of the supporting surface of the substrate supporting member of each of the plurality of exposure units are made to coincide with each other. 19. The method of claim 18,
Wherein the surface characteristics include at least one of a shape characteristic, an optical characteristic, and a friction characteristic of the support surface of the substrate support member. The method of claim 19,
Wherein the shape characteristic includes a curvature and a roughness of the supporting surface, the optical characteristic includes a reflectance for the exposure light, and the frictional characteristic includes a coefficient of friction of the supporting surface. The method according to any one of claims 17 to 20,
The plurality of exposure units of different exposures may include an exposure unit that exposes a pattern formed on the mask to the substrate in a proximity manner, an exposure unit that exposes a pattern formed on the mask to the substrate by a projection system by a projection optical system, And a maskless exposure unit for exposing the substrate with the exposure light modulated based on the data. 23. The method of claim 21,
Wherein each of the plurality of exposure sections includes an alignment system for detecting position information of a plurality of marks formed along the longitudinal direction on the substrate,
Wherein the first exposure unit located on the downstream side in the conveying direction of the sheet substrate among the plurality of exposure units includes the positional information detected by the alignment system of the second exposure unit located on the upstream side and the positional information detected by the alignment unit of the alignment unit of the first exposure unit, And corrects a relative positional relationship between the exposure light and the substrate in accordance with the pattern of the electronic device based on the positional information detected by the system. 23. The method of claim 22,
Wherein the first exposure portion exposes a portion of the pattern of the electronic device on the substrate and the second exposure portion selectively exposes another portion of the pattern of the electronic device to a pattern exposed on the substrate by the first exposure portion A device manufacturing apparatus for aligning and exposing. The method of any one of claims 21 to 23,
Wherein the mask is a transmissive or reflective cylindrical mask rotated in synchronism with movement of the substrate in the longitudinal direction,
Wherein the maskless exposure unit projects the exposure light modulated by the digital micromirror device onto the substrate according to the data of the pattern and a method of scanning the beam modulated according to the data of the pattern with a rotating polygon mirror, And projecting the pattern onto a substrate.

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