JP6069941B2 - Projection exposure apparatus and device manufacturing method - Google Patents

Description

  The present invention relates to a projection exposure apparatus and a device manufacturing method.

In a large screen display element such as a liquid crystal display element, a transparent electrode such as ITO or a semiconductor substance such as Si is deposited on a flat glass substrate, a metal material is evaporated, a photoresist is applied, and a circuit pattern is formed. The circuit pattern is formed by transferring, developing the photoresist after the transfer, and then etching. However, since the glass substrate is enlarged with an increase in the screen size of the display element, it is difficult to carry the substrate. Therefore, it is called a roll-to-roll method (hereinafter simply referred to as “roll method”) in which a display element is formed on a flexible substrate (for example, a film member such as polyimide, PET, or metal foil). A process technique has been proposed (for example, Patent Document 1).
In the process disclosed in Patent Document 1, a series of patterning steps are realized by a printing method (a droplet method such as inkjet), but the required patterning fineness (line width, etc.) is several tens of μm to several When the thickness is increased to about μm, it is expected that optical patterning (exposure technology) is required even in a roll process.
In this case, a mask pattern for a display device (display panel) made of organic EL or the like is repeatedly and faithfully transferred onto the photosensitive layer of a flexible long film or sheet sent at a constant speed. An exposure technique using a cylindrical transmissive mask has been proposed as such an exposure apparatus (see Patent Document 2).
An exposure apparatus that scans and exposes a plurality of shot areas on a semiconductor wafer using a reflective cylindrical mask for continuous repeated exposure has also been proposed (see Patent Document 3).

International Publication No. 2008/1229819 International Publication No. 2011/129369 International Publication No. 2008/029917

However, the following problems exist in the conventional technology as described above.
In the case of a transmission type cylindrical mask, as disclosed in Patent Document 2, the inside of the cylindrical mask is hollowed, and exposure light (illumination light or imaging light from a mask pattern) is sent to the outer periphery of the cylindrical mask. Since the direction needs to be directed, the structure of the cylindrical mask and the configuration on the exposure apparatus side tend to be complicated. On the other hand, when a reflective cylindrical mask is used, the illumination optical system that irradiates the illumination light for exposure to the outer peripheral space of the mask and the reflected light from the pattern formed on the outer peripheral surface of the substrate (film or sheet) In order to satisfy the required resolution and transfer fidelity, there is a concern that the configuration on the apparatus side will be complicated as well.

  The present invention has been made in consideration of the above points, and an object thereof is to provide a projection exposure apparatus and a device manufacturing method capable of simplifying the configuration of the apparatus.

  According to a first aspect of the present invention, there is provided a projection exposure apparatus for projecting and exposing a pattern formed on a reflective mask onto a sensitive substrate, wherein the pattern of the reflective mask is formed between the reflective mask and the sensitive substrate. A projection optical system having a first imaging optical system for forming an intermediate image and a second imaging optical system for re-imaging the intermediate image on the sensitive substrate, and illumination light for illuminating the pattern of the reflective mask Is arranged in a space where an intermediate image is formed between the first imaging optical system and the second imaging optical system, and the illumination light from the illumination system passes through the first imaging optical system. An optical splitter that guides the imaging light from the reflection mask pattern to the second imaging optical system through the first imaging optical system, and guides the imaging light from the reflection mask pattern to the second imaging optical system. A projection exposure apparatus is provided.

  According to the second aspect of the present invention, the reflective pattern for the display device formed along the peripheral surface of the rotatable cylindrical mask is continuously formed on the sensitive surface of the flexible long sheet substrate. A projection exposure apparatus that repeatedly performs projection exposure, having an outer peripheral surface curved with a predetermined radius of curvature, a substrate support member that supports the sheet substrate following the outer peripheral surface, and between the cylindrical mask and the substrate support member, A first imaging optical system that forms an intermediate image of a reflective pattern; a second imaging optical system that re-images the intermediate image on a sensitive surface of a sheet substrate supported by a substrate support member; and a cylindrical mask And an illumination system for generating illumination light for illuminating the reflection type pattern, and a space in which an intermediate image is formed between the first imaging optical system and the second imaging optical system. Light is directed to the cylindrical mask through the first imaging optical system. Together, the reflection-type projection exposure apparatus the reflected light from the pattern and a light splitter directing to face the second imaging optical system through the first imaging optical system is provided.

  According to a third aspect of the present invention, there is provided a device manufacturing method comprising: exposing a substrate using the projection exposure apparatus according to the first or second aspect of the present invention; and developing the exposed substrate. Is provided.

  According to the present invention, it is possible to provide a projection exposure apparatus and a device manufacturing method capable of simplifying the configuration of the apparatus even when a reflective mask is used.

1 is a schematic block diagram of a projection exposure apparatus according to a first embodiment. FIG. 6 is a schematic block diagram of a projection exposure apparatus according to a second embodiment. FIG. 10 is a schematic block diagram of a projection exposure apparatus according to a third embodiment. The schematic block diagram which shows the other Example of 3rd Embodiment. Schematic block diagram of the projection exposure apparatus according to the fourth embodiment FIG. 10 is a schematic plan view of a projection exposure apparatus according to a fifth embodiment. The schematic front view of the projection exposure apparatus which concerns on 5th Embodiment. The figure which shows the structure of a part of device manufacturing system SYS.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a projection exposure apparatus and a device manufacturing method according to the present invention will be described below with reference to FIGS.

(First embodiment)
First, a first embodiment of a projection exposure apparatus will be described with reference to FIG.
FIG. 1 is a schematic block diagram showing the principle of a projection exposure apparatus.

The projection exposure apparatus EX transfers the pattern of the mask M to the sensitive substrate P, and includes an illumination system IL, a projection optical system PL, a mask holding unit MU, a substrate holding unit PU, a light splitter DL, and a control unit CONT. I have.
In the present embodiment, the vertical direction is the Z direction, the direction parallel to the rotation axis of the mask holding unit MU and the substrate holding unit PU is the Y direction, and the direction perpendicular to the Z direction and the Y direction is the X direction. .

  The mask holding unit MU holds the pattern of the reflective mask M along the cylindrical surface and rotates around a rotation axis parallel to the Y axis. Examples of the pattern include patterns for electrodes, light emitting layers, and the like for driving display devices such as liquid crystal display devices, organic EL display devices, and plasma display devices. For example, a configuration in which a pattern is formed directly on the outer peripheral surface of a cylindrical body as the mask M, and the like. The mask holding unit MU (mask M) is rotationally driven by the driving device DM under the control of the control unit CONT.

  The substrate holding unit PU includes a rotating drum (substrate support member) PUa that holds the long sheet-like sensitive substrate P by following a part of the outer peripheral surface. The rotating drum PUa is a cylindrical drum having a cylindrical surface with a constant radius from a central axis parallel to the rotational axis of the mask holding unit MU as an outer peripheral surface, and rotatable about the central axis. The substrate holding unit PU (the rotating drum PUa and the sensitive substrate P) is rotationally driven by the driving device DP under the control of the control unit CONT.

  The illumination system IL forms a surface light source of illumination light for illuminating the mask M on the separation surface DLa in the light splitter DL using light emitted from the light source LS under the control of the control unit CONT.

  The light splitter DL includes the above-described separation surface DLa that reflects, for example, S-polarized light and transmits P-polarized light in the incident illumination light EL. A phase adjusting unit 10 for changing the polarization state is provided on the first imaging optical system PF1 side (mask M side) of the light splitter DL. For example, a λ / 4 plate is provided as the phase adjusting unit 10.

  The projection optical system PL includes a first imaging optical system PF1 provided on the mask M side with respect to the light divider DL, and a second imaging optical system PF2 disposed on the substrate P side with respect to the light divider DL. Have. The first imaging optical system PF1 illuminates the mask M with the illumination light EL separated by the separation surface DLa, and an intermediate image of the pattern of the mask M illuminated by the illumination light EL is positioned on the separation surface DLa. Formed on the image plane Df. The second imaging optical system PF2 re-images the intermediate image transmitted through the light splitter DL on the sensitive substrate P.

  The control unit CONT rotates the mask holding unit MU and the substrate holding unit PU synchronously at a predetermined rotation speed ratio via the driving devices DM and DP, thereby forming a pattern formed on the outer periphery of the cylindrical mask M. The image is continuously and repeatedly exposed to projection on the surface of the sensitive substrate P (surface curved along the cylindrical surface) wound around a part of the outer peripheral surface of the rotating drum PUa.

  In the projection exposure apparatus EX configured as described above, in the illumination light EL emitted from the light source LS, S-polarized light is reflected by the separation surface DLa of the light splitter DL, and passes through the phase adjustment unit 10 and the first imaging optical system PF1. Then, the pattern of the mask M is illuminated. The pattern image illuminated by the illumination light EL enters the light splitter DL via the first imaging optical system PF1 and the phase adjustment unit 10, and an intermediate image is formed on the separation surface DLa. At this time, since the illumination light EL is transmitted twice through the phase adjusting unit 10, the phase shifts by λ / 2 and reaches the separation surface DLa (intermediate image surface Df) as P-polarized light.

  The P-polarized light reaching the separation surface DLa passes through the light splitter DL and then reaches the sensitive substrate P by the second imaging optical system PF2, whereby an image of the pattern of the mask M is projected onto the sensitive substrate P. Is transcribed.

  Then, the mask holding unit MU and the substrate holding unit PU rotate synchronously, and the mask M and the sensitive substrate P move, for example, at the same peripheral speed, so that the pattern of the mask M is continuously on the sensitive substrate P. Transcribed.

  As described above, in the present embodiment, the light divider DL is disposed between the first and second imaging optical systems PF1 and PF2 disposed between the mask holding unit MU and the substrate holding unit PU, and the mask M Since the illumination light for illuminating the pattern is incident from the light splitter DL, it is not necessary to provide an illumination optical system in the outer peripheral space of the mask, and the apparatus configuration can be simplified. In this embodiment, since the mask holding unit MU holds the mask M along the cylindrical surface, the pattern of the mask M can be continuously transferred to the sensitive substrate P, and an efficient exposure process is performed. It becomes possible to do.

(Second Embodiment)
Next, a second embodiment of the projection exposure apparatus will be described with reference to FIG.
In this figure, the same reference numerals are given to the same elements as those of the first embodiment shown in FIG. 1, and the description thereof is omitted.
In the first embodiment, the projection exposure apparatus EX has been described in principle. In the second embodiment, a specific configuration of the projection exposure apparatus EX will be described.

  The illumination system IL in the projection exposure apparatus EX shown in FIG. 2 includes a relay optical system 21, a bundle fiber 22, a relay optical system 23, an integrator rod 24, and relay optical systems 25 and 26 that are sequentially arranged along the optical path of the illumination light EL. It has. An aperture stop 27 is disposed between the relay optical systems 25 and 26. The bundle fiber 22 forms a surface light source similar to the illumination area of the mask M (for example, a rectangular surface light source extending in the Y direction) by light incident from the light source LS via the relay optical system 21. The surface light source formed by the bundle fiber 22 is incident on the integrator rod 24 via the relay optical system 23 to improve the uniformity.

  The surface light source formed at the exit end of the integrator rod 24 with improved uniformity is formed on the separation surface DLa of the light splitter DL via the telecentric relay optical systems 25 and 26.

  The light splitter DL guides the s-polarized light out of the incident light so as to guide the illumination light EL from the illumination system IL toward the pattern of the mask M via the first imaging optical system PF1. A polarization beam splitter that reflects at DLa and transmits P-polarized light through separation surface DLa is used. The separation surface DLa is disposed at the position of the intermediate image surface Df formed by the first imaging optical system PF1.

  The first imaging optical system PF1 includes a first deflection member 50, a first lens group 51, a first concave mirror 52, and an adjustment unit 53. Near the pupil in the vicinity of the first concave mirror 52 in the first lens group 51, a phase adjustment unit 54 for changing the polarization state is provided. As the phase adjustment unit 54, for example, a λ / 8 plate is provided.

  The S-polarized illumination light EL that is incident and reflected on the separation surface DLa of the light splitter DL is reflected by the reflection surface 50b of the first deflecting member 50, passes through the first lens group 51 and the phase adjustment unit 54, and is reflected. The light is reflected by one concave mirror 52, passes through the first lens group 51 and the phase adjustment unit 54 again, is reflected by the reflection surface 50 a of the first deflection member 50, and enters the adjustment unit 53. The adjustment unit 53 corrects the image plane shape of the pattern of the mask M in accordance with the shape of the cylindrical surface of the mask holding unit MU. An aspherical surface is formed so as to be incident toward the center of curvature of M. The illumination light EL reflected by the reflecting surface 50a of the first deflecting member 50 and corrected in the incident direction to the mask M by the adjusting unit 53 illuminates the mask M with circularly polarized light.

  The imaging light from the pattern of the mask M is reflected by the reflecting surface 50a of the first deflecting member 50 through the adjusting unit 53, and is reflected by the first concave mirror 52 through the first lens group 51 and the phase adjusting unit 54. The light passes through the first lens group 51 and the phase adjustment unit 54 again, is reflected by the reflecting surface 50b of the first deflecting member 50, enters the light splitter DL, and forms an intermediate image on the intermediate image surface Df. In addition, the illumination light EL (imaging light) from the illumination system IL that has passed through the first imaging optical system PF1 passes through the phase adjusting unit 54 four times, so that the polarization state changes from S-polarized light to P-polarized light. Therefore, the light passes through the separation surface DLa.

  The second imaging optical system PF2 includes a second deflection member 60, a second lens group 61, a second concave mirror 62, and an adjustment unit 63. A phase adjustment unit 64 for changing the polarization state is provided near the pupil in the vicinity of the second concave mirror 62 in the second lens group 61. As the phase adjustment unit 64, for example, a λ / 8 plate is provided.

  The imaging light from the pattern of the mask M that has passed through the separation surface DLa is reflected by the reflection surface 60a of the second deflection member 60, is reflected by the second concave mirror 62 through the second lens group 61 and the phase adjustment unit 64. The light passes through the second lens group 61 and the phase adjustment unit 64 again, is reflected by the reflection surface 50 b of the second deflection member 60, and enters the adjustment unit 63. The adjusting unit 63 corrects the shape of the image plane formed on the sensitive substrate P according to the shape of the cylindrical surface of the substrate holding unit PU. The image of the pattern is re-imaged on the sensitive substrate P by allowing the imaging light to pass through the separation surface DLa and the adjustment unit 63.

  As described above, in this embodiment, in addition to obtaining the same operation and effect as those in the first embodiment, the image planes are adjusted along the surface of the mask M and the surface of the sensitive substrate P by the adjusting units 53 and 63. Since the adjustment is performed so that a large illumination area is set in the circumferential direction of the cylindrical mask holding unit MU and the substrate holding unit PU, it is possible to suppress the occurrence of an error in the focal position. The pattern M can be projected and exposed on the sensitive substrate P with high accuracy. In addition, since the so-called catadioptric projection optical system PL is used in the present embodiment, the configuration can be made compact, and as a result, various aberrations can be suppressed to be small.

(Third embodiment)
Next, a third embodiment of the projection exposure apparatus will be described with reference to FIG.
In this figure, the same reference numerals are given to the same elements as those of the second embodiment shown in FIG. 2, and the description thereof is omitted.
In the second embodiment, the mask holding unit MU is configured to hold the reflective mask M along the cylindrical surface. In the third embodiment, a configuration in which the endless belt-shaped reflective mask M is circulated will be described.

  As shown in FIG. 3, the mask holding unit MU in the projection exposure apparatus EX of the present embodiment includes circulation holding units MUa and MUb. The circulation holding portions MUa and MUb have outer peripheral surfaces having the same outer diameter, and are each formed in a cylindrical shape that rotates around an axis parallel to the Y axis. Further, the circulation holding units MUa and MUb are arranged with an interval in the X direction across the illumination area of the illumination light EL.

  The mask M is formed in an endless belt shape and is held on the outer peripheral surface which is a mask holding surface in the circulation holding portions MUa and MUb. Accordingly, the mask M is configured to move across the illumination area of the illumination light EL in the X direction on a plane when the circulation holding units MUa and MUb rotate synchronously.

In addition, since the illumination area of the mask M has a planar shape, the adjustment unit between the mask M and the first imaging optical system PF1 is not provided in the present embodiment.
Other configurations are the same as those of the second embodiment.

  In the projection exposure apparatus EX having the above-described configuration, the orbiting holding units MUa and MUb rotate in the same direction synchronously, so that the mask M held by the orbiting holding units MUa and MUb rotates around an axis parallel to the Y axis. As in the first embodiment, the pattern moved to the illumination area of the illumination light EL emitted from the light source LS and guided through the illumination system IL, the light splitter DL, and the first imaging optical system PF1 is sequentially illuminated. The The illuminated pattern image is formed on the intermediate image plane Df by the first imaging optical system PF1, and then the pattern image is sequentially applied to the sensitive substrate P by the second imaging optical system PF2 and the adjusting unit 63. Re-imaged.

  As described above, in this embodiment, in addition to obtaining the same operation and effect as those of the second embodiment, the pattern of the mask M has a planar shape in the illumination area. There is no need to provide an adjustment section.

In the third embodiment, the mask M is arranged in a planar shape by using the circulation holding portions MUa and MUb. For example, as shown in FIG. 4, the sensitive substrate P is arranged along the XY plane. A stage ST having a flat support surface (a radius of curvature of 1 m to infinity) that is supported in a non-contact (low friction state) by the air bearing layer is disposed, and a pattern of the mask M is formed on the planar sensitive substrate P. A configuration in which projection exposure is continuously performed may be employed.
By adopting this configuration, an adjustment unit for correcting the image plane shape with respect to the sensitive substrate P can be made unnecessary.

In the present embodiment, the mask M is configured in an endless belt shape using two roller-like orbiting holding portions MUa and MUb, and the flat support surface of the stage ST is used for pattern projection exposure in a flat portion. The curvature radius is preferably infinite in terms of optical characteristics. However, in consideration of applying a certain tension to the sensitive substrate P in order to suppress the occurrence of surface distortion and slight unevenness due to wrinkles of the sensitive substrate P, the depth of focus of the projection optical system PL and the exposure width in the scanning direction are considered. In consideration of resolution (minimum line width that can be transferred) and the like, the radius of curvature of the flat support surface of the stage ST may be a curved surface of 0.5 m or more from a practical viewpoint. That is, the flat support surface of the stage ST (for example, the outer peripheral surface having an air pad surface) can arbitrarily set the radius of curvature in the transport direction of the sensitive substrate P within a range of 0.5 m to ∞ (infinity).
Such a stage ST is obtained when the endless belt-like mask M in FIG. 4 is replaced with the cylindrical mask M shown in FIGS. 1 and 2 (when the pattern on the cylindrical surface is projected and exposed). However, it can be similarly applied.

(Fourth embodiment)
Next, a fourth embodiment of the projection exposure apparatus will be described with reference to FIG.
In this figure, the same reference numerals are given to the same elements as those of the second embodiment shown in FIG. 2, and the description thereof is omitted.
In the second embodiment, of the light emitted from the light source LS, the pattern of the mask M is projected and exposed onto the sensitive substrate P using S-polarized light. However, in the present embodiment, the S-polarized light and P-polarized light are emitted from the light source LS. A configuration in which projection light is emitted and each projection light is used for projection exposure will be described.

  As shown in FIG. 5, the projection exposure apparatus EX of the present embodiment includes a first exposure unit EX1 and a second exposure unit EX2. The first exposure unit EX has the same configuration as the projection exposure apparatus EX in the second embodiment (illumination system IL, light splitter DL, first and second imaging optical systems PF1, PF2, adjustment units 53, 63, Mask holding unit MU, substrate holding unit PU, etc.).

  The second exposure unit EX2 projects and exposes the second pattern of the mask (second reflective mask) M2 held by the mask holding unit MU2 onto the sensitive substrate (second sensitive substrate) P2 held by the substrate holding unit PU2. Relay optical system 11, optical splitter DL2, third and fourth imaging optical systems PF3, PF4, mask holding unit MU2, substrate holding unit PU2, adjustment units 53, 63, polarization conversion unit 12, etc. It has.

  The relay optical system 11 introduces P-polarized light transmitted through the separation surface DLa without going to the mask M out of the light incident on the light splitter DL from the illumination system IL in the first exposure unit EX1, and the mask M2 Which functions as a second illumination system for generating the second illumination light EL2 for illuminating the second pattern of the light, and the introduced P-polarized light is separated into the separation surface of the light splitter DL2 in the second exposure unit EX2 The image is formed on DLb. The light splitter DL2 guides the light incident via the relay optical system 11 to the pattern of the mask M2 via the third imaging optical system PF3 as illumination light EL2. The light splitter DL2 reflects S-polarized light of the incident light on the separation surface DLb and transmits P-polarized light on the separation surface DLb. The separation surface DLb is disposed at the position of the intermediate image surface Df2 formed by the third imaging optical system PF3.

  The polarization conversion unit 12 includes a collimator 13 that converts P-polarized light transmitted through the separation surface DLb into parallel light, a phase adjustment unit 14 including a λ / 4 plate, and a reflection plate 15. The P-polarized light that has passed through the separation surface DLb is reflected by the reflection plate 15, and is adjusted to S-polarized light by passing through the phase adjusting unit 14 twice, and is incident on the separation surface DLb again.

  The third imaging optical system PF3 includes a first deflection member 50, a first lens group 51, a first concave mirror 52, and an adjustment unit 53, like the first imaging optical system PF1 in the first exposure unit EX1. . Near the pupil in the vicinity of the first concave mirror 52 in the first lens group 51, a phase adjustment unit 54 for changing the polarization state is provided. As the phase adjustment unit 54, for example, a λ / 8 plate is provided.

  The fourth imaging optical system PF4 includes a second deflection member 60, a second lens group 61, a second concave mirror 62, and an adjustment unit 63, like the second imaging optical system PF2 in the first exposure unit EX1. . A phase adjustment unit 64 for changing the polarization state is provided near the pupil in the vicinity of the second concave mirror 62 in the second lens group 61. As the phase adjustment unit 64, for example, a λ / 8 plate is provided.

  The mask holding unit MU2 is arranged in parallel with the mask holding unit MU and the rotation axis, with a predetermined interval in the X direction. Further, the substrate holding part PU2 is arranged in parallel with the substrate holding part PU and the rotation axis and at a predetermined interval in the X direction.

  In the projection exposure apparatus EX configured as described above, both S-polarized light and P-polarized light are emitted from the light source LS. As described in the second embodiment, the first exposure unit EX1 includes a light source. Of the light emitted from the LS, S-polarized light is incident on the light splitter DL, reflected by the separation surface DLa, and directed to the mask M. The pattern of the mask M is changed to the sensitive substrate P using the S-polarized light. Is exposed to projection. On the other hand, the P-polarized light out of the light emitted from the light source LS is incident on the light splitter DL, but after passing through the separation surface DLa without going to the mask M, the light splitter via the relay optical system 11. It enters DL2 and passes through the separation surface DLb.

  The P-polarized light transmitted through the separation surface DLb is incident on the polarization conversion unit 12 and is emitted from the polarization conversion unit 12 in a state adjusted to S-polarized light by passing through the phase adjustment unit 14 twice. Re-enters DLb. The S-polarized light re-entering the separation surface DLb is reflected by the separation surface DLb, enters the adjustment unit 53 via the third imaging optical system PF3, and enters according to the shape of the cylindrical surface of the mask holding unit MU2. With the direction corrected, the second pattern of the mask M2 is illuminated with circularly polarized light.

  The imaging light from the second pattern of the mask M2 enters the light splitter DL2 via the adjustment unit 53 and the third imaging optical system PF3, and an intermediate image is formed on the intermediate image plane Df2. Further, the imaging light passing through the third imaging optical system PF3 passes through the separation surface DLb because the polarization state changes from S-polarized light to P-polarized light by passing through the phase adjusting unit 54 four times. . The imaging light from the second pattern of the mask M2 that has passed through the separation surface DLb is incident on the adjustment unit 63 via the fourth imaging optical system PF4, and the image plane shape that is imaged on the second sensitive substrate P2 is The image of the second pattern is re-imaged on the second sensitive substrate P2 in a state corrected according to the shape of the cylindrical surface of the second substrate holding unit PU2.

  As described above, in the present embodiment, in addition to the same operations and effects as those of the second embodiment, the first exposure unit among the S-polarized light and the P-polarized light emitted from the light source LS. Since the P-polarized light that was not used in EX1 is used in the exposure process for the second sensitive substrate P2 in the second exposure unit EX2, the light emitted from the light source LS can be used without waste, contributing to an improvement in throughput. .

(Fifth embodiment)
Next, a fifth embodiment of the projection exposure apparatus will be described with reference to FIGS.
In these drawings, the same reference numerals are given to the same elements as those of the fourth embodiment shown in FIG. 5, and the description thereof is omitted.
In the fourth embodiment, the first exposure unit EX1 projects and exposes the pattern of the mask M onto the sensitive substrate P, and the second exposure unit EX2 projects and exposes the second pattern of the second mask M2 onto the second sensitive substrate P2. In this embodiment, the case where the pattern of the mask M is projected and exposed to the sensitive substrate P in the second exposure unit EX2 will be described.

FIG. 6 is a plan view (Z-axis arrow view) schematically showing a projection exposure apparatus EX according to the fifth embodiment, and FIG. 7 is a front view.
As shown in FIGS. 6 and 7, the projection exposure apparatus EX in the present embodiment has circular holding units MUa and MUb that circulate an endless belt-shaped (endless track-shaped) reflective mask M and a sensitive substrate P on the XY plane. A stage ST that is supported in a non-contact manner, two first exposure parts EX1, and two second exposure parts EX2 are provided.
In addition, as a configuration for supporting the sensitive substrate P, similarly to the mask M, a configuration may be provided in which a circulation holding portion that rotates the endless belt-shaped (infinite track shape) sensitive substrate P is provided.

  The circulation holding portions MUa and MUb have outer peripheral surfaces having the same outer diameter, and are each formed in a cylindrical shape that rotates around an axis parallel to the Y axis. Further, the circulation holding units MUa and MUb are arranged with an interval in the X direction. The mask M is formed in an endless belt shape and is held on the outer peripheral surface which is a mask holding surface in the circulation holding portions MUa and MUb.

  Accordingly, in the mask M, a plane part MF parallel to the XY plane is formed between the circulation holding units MUa and MUb on the side facing the stage ST, and the rotation holding units MUa and MUb rotate synchronously, thereby illuminating light EL. , EL2 (described later) is configured to move so that the plane portion MF crosses the X direction in the X direction.

  Also on the stage ST, the sensitive substrate P is supported in a planar shape with the same size as the planar portion MF of the mask M.

  Each first exposure unit EX1 includes an illumination unit IU, a first imaging optical system PF1, a second imaging optical system PF2, a light splitter DL, and light guide mirrors LM1 and LM2. Each second exposure unit EX2 includes a third imaging optical system PF3, a fourth imaging optical system PF4, a light splitter DL2, and a polarization conversion unit 12.

  The illumination unit IU includes the light source LS and the illumination system IL described above. As shown in FIG. 6, illumination areas IA and IA2 on a mask M, which will be described later, and projection areas PA and PA2 on a sensitive substrate P are in the Y direction, respectively. The illumination light EL shaped so as to have an extending trapezoidal shape is emitted toward the light splitter DL. The illumination area IA and the illumination area IA2 in the mask M are arranged with an interval in the X direction so that the projection optical system PL and the projection optical system PL2 do not interfere with each other. The illumination areas IA and IA2 are arranged so that the triangular portions of the hypotenuses of the trapezoidal illumination areas adjacent in the Y direction overlap (overlapping). Therefore, for example, a part of the pattern of the mask M that passes through the illumination areas IA and IA2 due to the movement of the mask M overlaps.

  The light guide mirrors LM1 and LM2 bend the P-polarized light transmitted through the separation surface DLa of the divider DL out of the S-polarized light and the P-polarized light emitted from the illumination unit IU, so that the second exposure unit EX2 The light is guided to the light splitter DL2. The P-polarized light incident on the light splitter DL2 passes through the separation surface DLb, is converted into S-polarized light by the polarization conversion unit 12, and is incident on the separation surface DLb again.

  The S-polarized light re-incident on the separation surface DLb is reflected by the separation surface DLb and guided by the third imaging optical system PF3 as the second illumination light EL2 for illuminating the illumination area IA2 on the mask M. The second pattern of the illumination area IA2 is illuminated. Accordingly, the mask M holds both the pattern illuminated with the illumination light EL in the first exposure unit EX1 and the second pattern illuminated with the second illumination light EL2 in the second exposure unit EX2.

  The imaging light from the second pattern enters the light splitter DL2 via the third imaging optical system PF3 and passes through the separation surface DLb. The imaging light from the second pattern of the mask M that has passed through the separation surface DLb reaches the projection area PA2 on the sensitive substrate P via the fourth imaging optical system PF4. Thereby, the image of the second pattern of the mask M illuminated with the second illumination light EL2 is the same sensitive substrate P (pattern image) as the image of the pattern of the mask M illuminated with the illumination light EL in the first exposure unit EX1. Is re-imaged in the projection area PA and the second pattern image is re-imaged in the second projection area PA2).

  As described above, in the present embodiment, in addition to obtaining the same operation and effect as the fourth embodiment, both the first exposure unit EX1 and the second exposure unit EX2 are used to form one mask M. Since the pattern and the second pattern are projected onto the sensitive substrate P, it is not necessary to use a large projection optical system when forming a pattern with a large area on the sensitive substrate P, and high-precision exposure processing with little influence of aberration is performed. It can be realized.

(Device manufacturing system)
Next, a device manufacturing system including the projection exposure apparatus EX will be described with reference to FIG.
FIG. 8 is a diagram showing a partial configuration of a device manufacturing system (flexible display manufacturing line) SYS. Here, the flexible substrate P (sheet, film, etc.) drawn out from the supply roll FR1 is sequentially passed through n processing devices U1, U2, U3, U4, U5,... Un to the collection roll FR2. An example of winding up is shown. The host control device CONT performs overall control of the processing devices U1 to Un constituting the production line.

  In FIG. 8, the orthogonal coordinate system XYZ is set so that the front surface (or back surface) of the substrate P is perpendicular to the XZ plane, and the width direction orthogonal to the transport direction (long direction) of the substrate P is set to the Y direction. Shall be. The substrate P may be activated by modifying the surface in advance by a predetermined pretreatment, or may have a fine partition structure (uneven structure) for precise patterning formed on the surface.

  The substrate P wound around the supply roll FR1 is pulled out by the nipped drive roller DR1 and conveyed to the processing device U1, and the center of the substrate P in the Y direction (width direction) is set by the edge position controller EPC1. Servo control is performed so as to be within a range of about ± 10 μm to several tens μm with respect to the position.

  The processing device U1 continuously applies a photosensitive functional liquid (photoresist, photosensitive silane coupling material, UV curable resin liquid, etc.) to the surface of the substrate P by a printing method with respect to the transport direction (long direction) of the substrate P or This is a coating apparatus for selectively coating. In the processing apparatus U1, a coating mechanism including a pressure drum DR2 around which the substrate P is wound, and a coating roller for uniformly coating the photosensitive functional liquid on the surface of the substrate P on the pressure drum DR2. Gp1, a drying mechanism Gp2 for rapidly removing a solvent or moisture contained in the photosensitive functional liquid applied to the substrate P, and the like are provided.

  The processing device U2 heats the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, about several tens to 120 ° C.), and stabilizes the photosensitive functional layer applied to the surface. It is. In the processing apparatus U2, a plurality of rollers and an air turn bar for returning and conveying the substrate P, a heating chamber HA1 for heating the substrate P that has been carried in, and the temperature of the heated substrate P are as follows: A cooling chamber HA2 and a nipped drive roller DR3 are provided for lowering the temperature so as to match the ambient temperature of the post-process (processing device U3).

  The processing apparatus U3 as the projection exposure apparatus EX emits ultraviolet patterning light corresponding to a circuit pattern or a wiring pattern for display to the photosensitive functional layer of the substrate (sensitive substrate) P transported from the processing apparatus U2. An exposure apparatus for irradiation. In the processing apparatus U3, an edge position controller EPC that controls the center of the substrate P in the Y direction (width direction) to a fixed position, the nipped drive roller DR4, and the substrate P are partially wound with a predetermined tension, and the substrate A rotating drum DR5 (pressure drum 30) for supporting a pattern exposed portion on P in a uniform cylindrical surface, and two sets of driving rollers DR6 for giving a predetermined slack (play) DL to the substrate P, DR7 etc. are provided.

  Further, in the processing apparatus U3, a reflective mask pattern M formed on the outer peripheral surface of the cylindrical mask holding unit MU as shown in FIG. 2 and the outer peripheral surface of the mask holding unit MU are formed. The projection optical system PL that projects a part of the mask pattern M onto the substrate P supported by the rotary drum DR5, and the illumination light toward the mask pattern M from the position of the intermediate imaging plane in the projection optical system PL And an alignment microscope AM for detecting alignment marks and the like formed on the periphery of the substrate P in the Y direction (width direction).

  The processing device U4 is a wet processing device that performs wet development processing, electroless plating processing, and the like on the photosensitive functional layer of the substrate P conveyed from the processing device U3. In the processing apparatus U4, there are provided three processing tanks BT1, BT2, and BT3 layered in the Z direction, a plurality of rollers for bending and transporting the substrate P, a nip driving roller DR8, and the like.

  The processing apparatus U5 is a heating and drying apparatus that warms the substrate P conveyed from the processing apparatus U4 and adjusts the moisture content of the substrate P wetted by the wet process to a predetermined value, but the details are omitted. After that, the substrate P that has passed through several processing devices and passed through the last processing device Un in the series of processes is wound up on the collection roll FR2 via the nipped drive roller DR1. Also during the winding, the edge position controller EPC2 controls the Y of the drive roller DR1 and the recovery roll FR2 so that the center in the Y direction (width direction) of the substrate P or the substrate end in the Y direction does not vary in the Y direction. The relative position in the direction is successively corrected and controlled.

In the device manufacturing system SYS, the projection exposure apparatus EX as shown in FIG. 2 is used as the processing apparatus U3. However, it is needless to say that the exposure apparatus in the form of FIGS. 3 to 7 can be used. .
As described above, in the exposure apparatus as in each embodiment of the present invention, it is not necessary to provide an illumination optical system in the outer peripheral space of the cylindrical or endless belt-like mask or in the inner space, and the apparatus configuration is simplified. can do.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

  For example, in the embodiment, the mask M of the sheet material having a pattern is held on the outer peripheral surface of the mask holding unit, but the present invention is not limited to this, and the outer peripheral surface of the mask holding unit is made of an aluminum layer or the like. A high reflection film may be formed, and a pattern serving as a mask may be drawn and etched thereon to form a high reflection portion and a base light absorption portion (ultra low reflection portion).

  Moreover, in the said embodiment (for example, FIG. 6, FIG. 7), it was set as the structure which uses the 1st exposure part EX1 and the 2nd exposure part EX2, but it is not limited to this, Y direction (sensitive board | substrate) It goes without saying that three or more of them may be used in the width direction of P).

  11, 21, 23, 25, 26 ... relay optical system, DL ... light splitter (polarization beam splitter), DL2 ... light splitter (second light splitter), EX ... projection exposure apparatus, IL ... illumination system, M ... Mask (reflection type mask), M2 ... Mask (second reflection type mask), MU, MU2 ... Mask holding part, MUa, MUb ... Circumference holding part, P ... Sensing board, P2 ... Second sensing board, PF1 ... No. 1 imaging optical system, PF2 ... 2nd imaging optical system, PF3 ... 3rd imaging optical system, PF4 ... 4th imaging optical system, PL ... projection optical system, PU ... substrate holding part, PUa ... rotating drum ( Substrate support member)

Claims (7)

A projection exposure apparatus that projects and exposes a pattern formed on a reflective mask onto a sensitive substrate,
A first imaging optical system for forming an intermediate image of the pattern of the first reflective mask between the first reflective mask and the first sensitive substrate, re-imaging the intermediate image on the first photosensitive substrate A first projection optical system having a second imaging optical system,
A first illumination system for generating illumination light directed to the first reflective mask;
Illumination light that is disposed at a position where the intermediate image is formed between the first imaging optical system and the second imaging optical system and is generated by the first illumination system is used as the first imaging optical. It guides to face the first reflective mask through the system, the imaging light from the first reflective mask, toward the second imaging optical system through the first imaging optical system A first light splitter that guides
A third imaging optical system for forming an intermediate image of the pattern of the second reflective mask between the second reflective mask and the second sensitive substrate; and re-imaging the intermediate image on the second sensitive substrate. A second projection optical system having a fourth imaging optical system that
Of the illumination light from the first illumination system that has entered the first light splitter, illumination light that is not directed to the first reflective mask is introduced to generate illumination light directed to the second reflective mask. A second illumination system to
Illumination light that is disposed at a position where the intermediate image is formed between the third imaging optical system and the fourth imaging optical system and is generated by the second illumination system is used as the third imaging optical. And directing the imaging light from the second reflective mask to the fourth imaging optical system via the third imaging optical system, and directing the imaging light from the second reflection mask to the fourth imaging optical system via the third imaging optical system. A second light splitter leading to
A projection exposure apparatus. A mask holding part for holding the first reflective mask and the second reflective mask together;
The first sensitive substrate and the second sensitive substrate are two portions separated in the moving direction of one sensitive substrate,
  The projection area of the first projection optical system and the projection area of the second projection optical system are spaced apart in the moving direction of the one sensitive substrate and are partially overlapped with respect to the direction orthogonal to the moving direction. The projection exposure apparatus according to claim 1. 2. The projection exposure apparatus according to claim 1, further comprising a mask holding unit that is rotatable by holding the first reflective mask and the second reflective mask in a cylindrical surface around a predetermined axis. The first projection optical system includes a first adjustment unit that adjusts an image plane shape of the pattern of the first reflective mask held in a cylindrical surface shape by the mask holding unit according to the shape of the cylindrical surface. ,
The second projection optical system includes a second adjustment unit that adjusts an image surface shape of the pattern of the second reflective mask held in a cylindrical shape by the mask holding unit according to the shape of the cylindrical surface. The projection exposure apparatus according to claim 3 . The first sensitive substrate and the second sensitive substrate are long sheet substrates having flexibility,
5. The projection exposure apparatus according to claim 1, further comprising a rotating drum that supports and rotates the sheet substrate following a cylindrical outer peripheral surface curved with a predetermined radius of curvature. Each of the first optical splitter and the second optical splitter includes a polarization beam splitter,
The projection exposure apparatus according to any one of claims 1 to 5 . A device manufacturing method comprising: exposing a substrate using the projection exposure apparatus according to any one of claims 1 to 6 ; and developing the exposed substrate.

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