KR101617231B1 - 전류 흐름에 대한 가요성 접속부의 불연속성을 검출하는 장치 및 그 방법 - Google Patents

전류 흐름에 대한 가요성 접속부의 불연속성을 검출하는 장치 및 그 방법 Download PDF

Info

Publication number
KR101617231B1
KR101617231B1 KR1020117025584A KR20117025584A KR101617231B1 KR 101617231 B1 KR101617231 B1 KR 101617231B1 KR 1020117025584 A KR1020117025584 A KR 1020117025584A KR 20117025584 A KR20117025584 A KR 20117025584A KR 101617231 B1 KR101617231 B1 KR 101617231B1
Authority
KR
South Korea
Prior art keywords
flexible connector
current flow
coil
current
connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117025584A
Other languages
English (en)
Korean (ko)
Other versions
KR20120020104A (ko
Inventor
세예드 자파르 자파리안-테라니
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20120020104A publication Critical patent/KR20120020104A/ko
Application granted granted Critical
Publication of KR101617231B1 publication Critical patent/KR101617231B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/54—Testing for continuity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
KR1020117025584A 2009-04-28 2010-04-26 전류 흐름에 대한 가요성 접속부의 불연속성을 검출하는 장치 및 그 방법 Active KR101617231B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/431,593 US8466697B2 (en) 2009-04-28 2009-04-28 Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof
US12/431,593 2009-04-28

Publications (2)

Publication Number Publication Date
KR20120020104A KR20120020104A (ko) 2012-03-07
KR101617231B1 true KR101617231B1 (ko) 2016-05-02

Family

ID=42991565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117025584A Active KR101617231B1 (ko) 2009-04-28 2010-04-26 전류 흐름에 대한 가요성 접속부의 불연속성을 검출하는 장치 및 그 방법

Country Status (7)

Country Link
US (1) US8466697B2 (enExample)
JP (1) JP5781064B2 (enExample)
KR (1) KR101617231B1 (enExample)
CN (2) CN104360211B (enExample)
SG (1) SG175164A1 (enExample)
TW (1) TWI489117B (enExample)
WO (1) WO2010129229A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102018733B1 (ko) 2013-06-13 2019-09-06 삼성디스플레이 주식회사 플렉서블 표시장치
CN105116271B (zh) * 2015-08-07 2019-04-26 深圳一电航空技术有限公司 桨叶检测装置及方法、桨叶组件、飞行器及其控制方法
KR102417178B1 (ko) * 2015-09-03 2022-07-05 삼성전자주식회사 마이크로파 탐침, 그 탐침을 구비한 플라즈마 모니터링 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법
US20210073610A1 (en) * 2017-12-27 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Thin film manufacturing apparatus and thin film manufacturing apparatus using neural network
CN115825529B (zh) * 2022-12-25 2023-11-17 北京屹唐半导体科技股份有限公司 射频探头、射频匹配器、射频电源及射频测量仪

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002202328A (ja) * 2000-12-28 2002-07-19 Japan System Engineering Kk 磁界型電流センサ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2100135C (en) * 1992-07-10 1997-11-04 Makoto Kawakami Dc current sensor
JPH09257861A (ja) * 1996-03-21 1997-10-03 Toshiba Corp 心線損傷検出装置
JPH1079350A (ja) 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US7271580B1 (en) * 2001-10-26 2007-09-18 Schweitzer Engineering Laboratories, Inc. Apparatus and method for programmable trip settings in a faulted circuit indicator
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
KR100483355B1 (ko) 2002-11-14 2005-04-15 학교법인 성균관대학 자장강화된 외장형 선형 안테나를 구비하는 대면적 처리용유도 결합 플라즈마 소오스
US6876205B2 (en) * 2003-06-06 2005-04-05 Advanced Energy Industries, Inc. Stored energy arc detection and arc reduction circuit
US7145345B2 (en) * 2003-12-23 2006-12-05 General Electric Company Current transformers for partial discharge detection on aircraft cables and wires
JP4359521B2 (ja) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 プラズマ処理装置及びその制御方法
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US8343305B2 (en) * 2007-09-04 2013-01-01 Lam Research Corporation Method and apparatus for diagnosing status of parts in real time in plasma processing equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002202328A (ja) * 2000-12-28 2002-07-19 Japan System Engineering Kk 磁界型電流センサ

Also Published As

Publication number Publication date
US8466697B2 (en) 2013-06-18
WO2010129229A3 (en) 2011-02-03
CN102415221B (zh) 2014-11-19
KR20120020104A (ko) 2012-03-07
TW201126179A (en) 2011-08-01
US20100271040A1 (en) 2010-10-28
CN102415221A (zh) 2012-04-11
TWI489117B (zh) 2015-06-21
JP5781064B2 (ja) 2015-09-16
CN104360211B (zh) 2017-11-24
CN104360211A (zh) 2015-02-18
SG175164A1 (en) 2011-11-28
WO2010129229A2 (en) 2010-11-11
JP2012525683A (ja) 2012-10-22

Similar Documents

Publication Publication Date Title
KR101617231B1 (ko) 전류 흐름에 대한 가요성 접속부의 불연속성을 검출하는 장치 및 그 방법
JP5296676B2 (ja) プラズマ非拘束状態の検出方法および前記方法を用いるプラズマ処理システム
TWI512864B (zh) 在電漿處理設備中即時診斷部件狀態之方法及裝置
JP5215942B2 (ja) 電子装置、および、雑音電流測定方法
US9030212B2 (en) Target sensor
US20140091785A1 (en) Target clearance measurement device
US7649200B1 (en) System and method of detecting IC die cracks
JP2005024518A (ja) 導電パターン検査装置
KR100897982B1 (ko) 프로브카드 니들과 패드간의 미스 얼라인 방지 패턴 및 그방법
US10712234B2 (en) Belt and pulley systems and methods of detecting belt damage
JP2003045846A (ja) 半導体製造装置の監視方法及びその制御方法
JP2016122003A (ja) 欠陥検出回路及びフレキシブル・プローブ・チップ中の潜在的な欠陥検出方法
JP4856120B2 (ja) 導電パターン検査装置
CN103930775B (zh) 磁性体评价装置及其评价方法
JP2007007848A (ja) ワイヤソーにおける機能障害の検出方法、およびこの方法を実施するための装置
JP2007248107A (ja) 電源ノイズ検出装置
JP2009115719A (ja) 基板検査装置及び基板検査方法
KR200480985Y1 (ko) 반도체 제조 장비용 세라믹 히터의 모니터 장치 및 상기 반도체 제조 장비용 세라믹 히터의 모니터 장치를 포함하는 반도체 제조 장비용 세라믹 히터
IT202300008100A1 (it) Testa di misura con sonde di contatto aventi una configurazione perfezionata
JP2000139059A (ja) 交流電動機の絶縁破壊検出装置
JP2004286664A (ja) 故障診断用コイルの設計方法、プリント基板、故障診断システム
JP2006303342A (ja) 半導体装置および半導体装置の製造方法
JP2005014750A (ja) トロリーの絶縁状況監視方法
JPH04217117A (ja) 近接スイッチの劣化診断方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190411

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000