KR101597866B1 - 패턴 결정 방법, 패턴 결정 장치, 및 저장 매체 - Google Patents

패턴 결정 방법, 패턴 결정 장치, 및 저장 매체 Download PDF

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KR101597866B1
KR101597866B1 KR1020120141155A KR20120141155A KR101597866B1 KR 101597866 B1 KR101597866 B1 KR 101597866B1 KR 1020120141155 A KR1020120141155 A KR 1020120141155A KR 20120141155 A KR20120141155 A KR 20120141155A KR 101597866 B1 KR101597866 B1 KR 101597866B1
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South Korea
Prior art keywords
pattern
mask
value
evaluation function
condition
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Korean (ko)
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KR20130064029A (ko
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유이치 교다
고지 미카미
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020120141155A 2011-12-07 2012-12-06 패턴 결정 방법, 패턴 결정 장치, 및 저장 매체 Active KR101597866B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011268368A JP5988569B2 (ja) 2011-12-07 2011-12-07 決定方法、決定装置およびプログラム
JPJP-P-2011-268368 2011-12-07

Publications (2)

Publication Number Publication Date
KR20130064029A KR20130064029A (ko) 2013-06-17
KR101597866B1 true KR101597866B1 (ko) 2016-02-25

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US (1) US8839169B2 (enExample)
JP (1) JP5988569B2 (enExample)
KR (1) KR101597866B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102029645B1 (ko) * 2013-01-14 2019-11-18 삼성전자 주식회사 맞춤형 마스크의 제조 방법 및 맞춤형 마스크를 이용한 반도체 장치의 제조 방법
TWI675259B (zh) 2014-05-30 2019-10-21 日商尼康股份有限公司 微影系統、模擬裝置、及圖案形成方法
KR20170097133A (ko) * 2014-12-17 2017-08-25 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법
TWI745351B (zh) * 2017-02-24 2021-11-11 聯華電子股份有限公司 半導體佈局圖案分割方法
CN108196422B (zh) * 2017-12-14 2021-05-11 中国电子科技集团公司第四十七研究所 一种提高分步重复精缩机制作4寸版曝光面积的方法
CN113495435B (zh) * 2021-05-26 2023-08-08 暨南大学 一种数字掩模投影光刻优化方法及系统
JP2023045120A (ja) * 2021-09-21 2023-04-03 キオクシア株式会社 マスク設計方法及びその記録媒体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011095729A (ja) * 2009-10-30 2011-05-12 Canon Inc 記録媒体及び決定方法

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JP3445045B2 (ja) 1994-12-29 2003-09-08 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
JP2001318455A (ja) * 2000-05-12 2001-11-16 Hitachi Ltd 半導体集積回路装置の製造方法
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
US6792592B2 (en) 2002-08-30 2004-09-14 Numerical Technologies, Inc. Considering mask writer properties during the optical proximity correction process
JP2004288694A (ja) * 2003-03-19 2004-10-14 Renesas Technology Corp 半導体装置の製造方法およびそのシステム
US6931617B2 (en) * 2003-04-21 2005-08-16 Synopsys, Inc. Mask cost driven logic optimization and synthesis
JP2004361507A (ja) * 2003-06-02 2004-12-24 Renesas Technology Corp フォトマスクの製造方法およびフォトマスク描画システム
CN101258498B (zh) * 2005-08-08 2011-04-13 Asml荷兰有限公司 用于形成光刻工艺的焦点曝光模型的系统和方法
JP2008233355A (ja) * 2007-03-19 2008-10-02 Renesas Technology Corp フォトマスクの製造方法
JP5149719B2 (ja) * 2007-09-14 2013-02-20 ルネサスエレクトロニクス株式会社 フォトマスクの製造方法
US8390781B2 (en) * 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8584056B2 (en) * 2008-11-21 2013-11-12 Asml Netherlands B.V. Fast freeform source and mask co-optimization method
JP5182641B2 (ja) * 2008-12-01 2013-04-17 凸版印刷株式会社 フォトマスクのパターンデータ生成方法、フォトマスクのパターンデータ生成装置、およびプログラム
KR101198348B1 (ko) * 2009-10-28 2012-11-06 에이에스엠엘 네델란즈 비.브이. 풀-칩 소스 및 마스크 최적화를 위한 패턴 선택
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011095729A (ja) * 2009-10-30 2011-05-12 Canon Inc 記録媒体及び決定方法

Also Published As

Publication number Publication date
US20130149636A1 (en) 2013-06-13
JP5988569B2 (ja) 2016-09-07
KR20130064029A (ko) 2013-06-17
JP2013120290A (ja) 2013-06-17
US8839169B2 (en) 2014-09-16

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