KR101503969B1 - 반도체 디바이스 형성 방법 - Google Patents

반도체 디바이스 형성 방법 Download PDF

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Publication number
KR101503969B1
KR101503969B1 KR1020117006359A KR20117006359A KR101503969B1 KR 101503969 B1 KR101503969 B1 KR 101503969B1 KR 1020117006359 A KR1020117006359 A KR 1020117006359A KR 20117006359 A KR20117006359 A KR 20117006359A KR 101503969 B1 KR101503969 B1 KR 101503969B1
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precursor
aluminum
carbonitride
substrate
metal
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KR20110069015A (ko
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도시오 하세가와
게릿 제이 로이싱크
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020117006359A 2008-08-25 2009-08-22 반도체 디바이스 형성 방법 Expired - Fee Related KR101503969B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/197,756 US7985680B2 (en) 2008-08-25 2008-08-25 Method of forming aluminum-doped metal carbonitride gate electrodes
US12/197,756 2008-08-25
PCT/US2009/054707 WO2010027715A1 (en) 2008-08-25 2009-08-22 Method for forming aluminum-doped metal carbonitride gate electrodes

Publications (2)

Publication Number Publication Date
KR20110069015A KR20110069015A (ko) 2011-06-22
KR101503969B1 true KR101503969B1 (ko) 2015-03-24

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Country Link
US (1) US7985680B2 (enExample)
JP (1) JP5529134B2 (enExample)
KR (1) KR101503969B1 (enExample)
CN (1) CN102132389B (enExample)
DE (1) DE112009002118B4 (enExample)
TW (1) TWI438832B (enExample)
WO (1) WO2010027715A1 (enExample)

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US9224594B2 (en) 2013-11-18 2015-12-29 Intermolecular, Inc. Surface preparation with remote plasma
US9607888B2 (en) 2014-02-03 2017-03-28 Tokyo Electron Limited Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling
US10163644B2 (en) 2014-02-07 2018-12-25 Taiwan Semiconductor Manufacturing Company Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same
TWI556429B (zh) 2014-07-10 2016-11-01 台灣積體電路製造股份有限公司 積體電路裝置與其形成方法
DE102014119644B4 (de) 2014-07-10 2024-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Metalgatestapel mit TiAICN als Arbeitsfunktionsschicht und/oder Sperr/Benetzungsschicht und Verfahren
US10002936B2 (en) * 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
CN109285879B (zh) * 2017-07-20 2021-06-08 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10665685B2 (en) 2017-11-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication method thereof
US12482648B2 (en) 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US11251261B2 (en) * 2019-05-17 2022-02-15 Micron Technology, Inc. Forming a barrier material on an electrode
US11456177B2 (en) 2020-09-22 2022-09-27 Nanya Technology Corporation Method of manufacturing semiconductor device
TW202248447A (zh) * 2021-03-08 2022-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成包含有鋁、鈦、與碳之層的方法及系統

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JP2008172227A (ja) * 2007-01-04 2008-07-24 Interuniv Micro Electronica Centrum Vzw 電子デバイスおよびその製造プロセス

Also Published As

Publication number Publication date
JP5529134B2 (ja) 2014-06-25
WO2010027715A1 (en) 2010-03-11
CN102132389A (zh) 2011-07-20
US20100048009A1 (en) 2010-02-25
CN102132389B (zh) 2013-07-10
TWI438832B (zh) 2014-05-21
JP2012501093A (ja) 2012-01-12
DE112009002118B4 (de) 2013-03-07
TW201021099A (en) 2010-06-01
KR20110069015A (ko) 2011-06-22
DE112009002118T5 (de) 2011-07-28
US7985680B2 (en) 2011-07-26

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