JP5529134B2 - アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 - Google Patents

アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 Download PDF

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JP5529134B2
JP5529134B2 JP2011525115A JP2011525115A JP5529134B2 JP 5529134 B2 JP5529134 B2 JP 5529134B2 JP 2011525115 A JP2011525115 A JP 2011525115A JP 2011525115 A JP2011525115 A JP 2011525115A JP 5529134 B2 JP5529134 B2 JP 5529134B2
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precursor
aluminum
metal carbonitride
substrate
carbonitride
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JP2012501093A5 (enExample
JP2012501093A (ja
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敏夫 長谷川
ジェイ ルーシンク，ヘリット
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2011525115A 2008-08-25 2009-08-22 アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 Expired - Fee Related JP5529134B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/197,756 2008-08-25
US12/197,756 US7985680B2 (en) 2008-08-25 2008-08-25 Method of forming aluminum-doped metal carbonitride gate electrodes
PCT/US2009/054707 WO2010027715A1 (en) 2008-08-25 2009-08-22 Method for forming aluminum-doped metal carbonitride gate electrodes

Publications (3)

Publication Number Publication Date
JP2012501093A JP2012501093A (ja) 2012-01-12
JP2012501093A5 JP2012501093A5 (enExample) 2012-06-21
JP5529134B2 true JP5529134B2 (ja) 2014-06-25

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JP2011525115A Expired - Fee Related JP5529134B2 (ja) 2008-08-25 2009-08-22 アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法

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Country Link
US (1) US7985680B2 (enExample)
JP (1) JP5529134B2 (enExample)
KR (1) KR101503969B1 (enExample)
CN (1) CN102132389B (enExample)
DE (1) DE112009002118B4 (enExample)
TW (1) TWI438832B (enExample)
WO (1) WO2010027715A1 (enExample)

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Also Published As

Publication number Publication date
CN102132389B (zh) 2013-07-10
US7985680B2 (en) 2011-07-26
CN102132389A (zh) 2011-07-20
WO2010027715A1 (en) 2010-03-11
DE112009002118B4 (de) 2013-03-07
DE112009002118T5 (de) 2011-07-28
KR101503969B1 (ko) 2015-03-24
KR20110069015A (ko) 2011-06-22
TW201021099A (en) 2010-06-01
US20100048009A1 (en) 2010-02-25
TWI438832B (zh) 2014-05-21
JP2012501093A (ja) 2012-01-12

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