JP2012501093A5 - - Google Patents
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- Publication number
- JP2012501093A5 JP2012501093A5 JP2011525115A JP2011525115A JP2012501093A5 JP 2012501093 A5 JP2012501093 A5 JP 2012501093A5 JP 2011525115 A JP2011525115 A JP 2011525115A JP 2011525115 A JP2011525115 A JP 2011525115A JP 2012501093 A5 JP2012501093 A5 JP 2012501093A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- metal carbonitride
- aluminum
- substrate
- carbonitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 claims 35
- 238000000034 method Methods 0.000 claims 33
- 229910052751 metal Inorganic materials 0.000 claims 30
- 239000002184 metal Substances 0.000 claims 30
- 238000000151 deposition Methods 0.000 claims 26
- 239000007789 gas Substances 0.000 claims 21
- 229910052782 aluminium Inorganic materials 0.000 claims 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 18
- 230000008021 deposition Effects 0.000 claims 17
- 238000001179 sorption measurement Methods 0.000 claims 14
- 229910052715 tantalum Inorganic materials 0.000 claims 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 10
- 239000010936 titanium Substances 0.000 claims 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 7
- 229910052719 titanium Inorganic materials 0.000 claims 7
- 238000000197 pyrolysis Methods 0.000 claims 6
- 230000002123 temporal effect Effects 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims 2
- 229910011208 Ti—N Inorganic materials 0.000 claims 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 claims 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/197,756 | 2008-08-25 | ||
| US12/197,756 US7985680B2 (en) | 2008-08-25 | 2008-08-25 | Method of forming aluminum-doped metal carbonitride gate electrodes |
| PCT/US2009/054707 WO2010027715A1 (en) | 2008-08-25 | 2009-08-22 | Method for forming aluminum-doped metal carbonitride gate electrodes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012501093A JP2012501093A (ja) | 2012-01-12 |
| JP2012501093A5 true JP2012501093A5 (enExample) | 2012-06-21 |
| JP5529134B2 JP5529134B2 (ja) | 2014-06-25 |
Family
ID=41696772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011525115A Expired - Fee Related JP5529134B2 (ja) | 2008-08-25 | 2009-08-22 | アルミニウムがドープされた金属炭窒化物ゲート電極の作製方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7985680B2 (enExample) |
| JP (1) | JP5529134B2 (enExample) |
| KR (1) | KR101503969B1 (enExample) |
| CN (1) | CN102132389B (enExample) |
| DE (1) | DE112009002118B4 (enExample) |
| TW (1) | TWI438832B (enExample) |
| WO (1) | WO2010027715A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102393A1 (en) * | 2008-10-29 | 2010-04-29 | Chartered Semiconductor Manufacturing, Ltd. | Metal gate transistors |
| JP2014222723A (ja) * | 2013-05-14 | 2014-11-27 | 独立行政法人産業技術総合研究所 | 電界効果型半導体装置及びその製造方法 |
| US9552979B2 (en) * | 2013-05-31 | 2017-01-24 | Asm Ip Holding B.V. | Cyclic aluminum nitride deposition in a batch reactor |
| US9224594B2 (en) | 2013-11-18 | 2015-12-29 | Intermolecular, Inc. | Surface preparation with remote plasma |
| US9607888B2 (en) | 2014-02-03 | 2017-03-28 | Tokyo Electron Limited | Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling |
| US10163644B2 (en) | 2014-02-07 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company | Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same |
| DE102014119644B4 (de) | 2014-07-10 | 2024-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metalgatestapel mit TiAICN als Arbeitsfunktionsschicht und/oder Sperr/Benetzungsschicht und Verfahren |
| TWI556429B (zh) | 2014-07-10 | 2016-11-01 | 台灣積體電路製造股份有限公司 | 積體電路裝置與其形成方法 |
| US10002936B2 (en) * | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
| CN109285879B (zh) * | 2017-07-20 | 2021-06-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US10665685B2 (en) | 2017-11-30 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication method thereof |
| JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー．ブイ． | 選択的パッシベーションおよび選択的堆積 |
| US12482648B2 (en) | 2018-10-02 | 2025-11-25 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
| US11251261B2 (en) * | 2019-05-17 | 2022-02-15 | Micron Technology, Inc. | Forming a barrier material on an electrode |
| US11456177B2 (en) | 2020-09-22 | 2022-09-27 | Nanya Technology Corporation | Method of manufacturing semiconductor device |
| TW202248447A (zh) * | 2021-03-08 | 2022-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成包含有鋁、鈦、與碳之層的方法及系統 |
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| US7645484B2 (en) * | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
| US8153271B2 (en) | 2006-09-13 | 2012-04-10 | Ormecon Gmbh | Article with a coating of electrically conductive polymer and precious/semiprecious metal and process for production thereof |
| US20080132050A1 (en) * | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
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| EP1942528A1 (en) * | 2007-01-04 | 2008-07-09 | Interuniversitair Microelektronica Centrum | Electronic device and process for manufacturing the same |
| JP2008205012A (ja) * | 2007-02-16 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US7829158B2 (en) * | 2007-05-07 | 2010-11-09 | Tokyo Electron Limited | Method for depositing a barrier layer on a low dielectric constant material |
| JP5513767B2 (ja) * | 2008-06-25 | 2014-06-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置 |
| US8557702B2 (en) * | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
-
2008
- 2008-08-25 US US12/197,756 patent/US7985680B2/en not_active Expired - Fee Related
-
2009
- 2009-08-22 WO PCT/US2009/054707 patent/WO2010027715A1/en not_active Ceased
- 2009-08-22 CN CN2009801335090A patent/CN102132389B/zh not_active Expired - Fee Related
- 2009-08-22 KR KR1020117006359A patent/KR101503969B1/ko not_active Expired - Fee Related
- 2009-08-22 DE DE112009002118T patent/DE112009002118B4/de not_active Expired - Fee Related
- 2009-08-22 JP JP2011525115A patent/JP5529134B2/ja not_active Expired - Fee Related
- 2009-08-25 TW TW098128486A patent/TWI438832B/zh not_active IP Right Cessation
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