KR101459754B1 - 반도체 발광소자 및 그 제조방법 - Google Patents

반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
KR101459754B1
KR101459754B1 KR1020070090685A KR20070090685A KR101459754B1 KR 101459754 B1 KR101459754 B1 KR 101459754B1 KR 1020070090685 A KR1020070090685 A KR 1020070090685A KR 20070090685 A KR20070090685 A KR 20070090685A KR 101459754 B1 KR101459754 B1 KR 101459754B1
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KR
South Korea
Prior art keywords
semiconductor layer
layer
conductive
nonconductor
semiconductor
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Expired - Fee Related
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KR1020070090685A
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English (en)
Korean (ko)
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KR20090025670A (ko
Inventor
손효근
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엘지이노텍 주식회사
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Priority to KR1020070090685A priority Critical patent/KR101459754B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN201310022156.5A priority patent/CN103050590B/zh
Priority to US12/676,785 priority patent/US8299493B2/en
Priority to EP08829429.3A priority patent/EP2195862B1/en
Priority to JP2010523955A priority patent/JP2010538491A/ja
Priority to CN200880105858.7A priority patent/CN101796658B/zh
Priority to PCT/KR2008/005266 priority patent/WO2009031858A2/en
Publication of KR20090025670A publication Critical patent/KR20090025670A/ko
Application granted granted Critical
Publication of KR101459754B1 publication Critical patent/KR101459754B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
KR1020070090685A 2007-09-06 2007-09-06 반도체 발광소자 및 그 제조방법 Expired - Fee Related KR101459754B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020070090685A KR101459754B1 (ko) 2007-09-06 2007-09-06 반도체 발광소자 및 그 제조방법
US12/676,785 US8299493B2 (en) 2007-09-06 2008-09-05 Semiconductor light emitting device and method of fabricating the same
EP08829429.3A EP2195862B1 (en) 2007-09-06 2008-09-05 Semiconductor light emitting device and method of fabricating the same
JP2010523955A JP2010538491A (ja) 2007-09-06 2008-09-05 半導体発光素子及びその製造方法
CN201310022156.5A CN103050590B (zh) 2007-09-06 2008-09-05 半导体发光器件
CN200880105858.7A CN101796658B (zh) 2007-09-06 2008-09-05 半导体发光器件及其制造方法
PCT/KR2008/005266 WO2009031858A2 (en) 2007-09-06 2008-09-05 Semiconductor light emitting device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070090685A KR101459754B1 (ko) 2007-09-06 2007-09-06 반도체 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20090025670A KR20090025670A (ko) 2009-03-11
KR101459754B1 true KR101459754B1 (ko) 2014-11-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070090685A Expired - Fee Related KR101459754B1 (ko) 2007-09-06 2007-09-06 반도체 발광소자 및 그 제조방법

Country Status (6)

Country Link
US (1) US8299493B2 (enExample)
EP (1) EP2195862B1 (enExample)
JP (1) JP2010538491A (enExample)
KR (1) KR101459754B1 (enExample)
CN (2) CN101796658B (enExample)
WO (1) WO2009031858A2 (enExample)

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US8994052B2 (en) * 2008-03-04 2015-03-31 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
US8481411B2 (en) * 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
US8860183B2 (en) * 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
WO2010143778A1 (ko) * 2009-06-10 2010-12-16 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
CN104795313B (zh) 2009-08-26 2017-12-08 首尔伟傲世有限公司 制造半导体基底的方法和制造发光装置的方法
US8597961B2 (en) * 2009-10-20 2013-12-03 Walsin Lihwa Corporation Method for improving internal quantum efficiency of group-III nitride-based light emitting device
KR100999684B1 (ko) * 2009-10-21 2010-12-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
KR20120092325A (ko) * 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법
WO2013063020A1 (en) * 2011-10-24 2013-05-02 The Regents Of The University Of California SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N
WO2013133593A1 (ko) * 2012-03-08 2013-09-12 서울옵토디바이스주식회사 광추출 효율이 개선된 발광다이오드 및 그 제조방법
CN102738334B (zh) * 2012-06-19 2015-07-08 厦门市三安光电科技有限公司 具有电流扩展层的发光二极管及其制作方法
US9450150B2 (en) * 2012-10-22 2016-09-20 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element
TWI539625B (zh) * 2013-10-22 2016-06-21 璨圓光電股份有限公司 半導體發光元件及其製造方法
CN113363358B (zh) * 2021-05-31 2022-06-03 厦门乾照光电股份有限公司 一种led芯片

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US20040159843A1 (en) * 2003-02-14 2004-08-19 Edmond John Adam Inverted light emitting diode on conductive substrate

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JPH08335684A (ja) * 1995-06-08 1996-12-17 Toshiba Corp 半導体装置
JP2000101135A (ja) * 1998-09-24 2000-04-07 Toshiba Corp 化合物半導体素子
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
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US7768024B2 (en) * 2005-12-02 2010-08-03 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
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KR100580751B1 (ko) 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
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Also Published As

Publication number Publication date
CN103050590B (zh) 2016-06-29
EP2195862A2 (en) 2010-06-16
CN103050590A (zh) 2013-04-17
CN101796658B (zh) 2013-03-13
CN101796658A (zh) 2010-08-04
WO2009031858A2 (en) 2009-03-12
US20100252859A1 (en) 2010-10-07
EP2195862A4 (en) 2014-01-08
JP2010538491A (ja) 2010-12-09
KR20090025670A (ko) 2009-03-11
WO2009031858A3 (en) 2009-05-14
EP2195862B1 (en) 2017-01-18
US8299493B2 (en) 2012-10-30

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