CN101796658B - 半导体发光器件及其制造方法 - Google Patents

半导体发光器件及其制造方法 Download PDF

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Publication number
CN101796658B
CN101796658B CN200880105858.7A CN200880105858A CN101796658B CN 101796658 B CN101796658 B CN 101796658B CN 200880105858 A CN200880105858 A CN 200880105858A CN 101796658 B CN101796658 B CN 101796658B
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CN
China
Prior art keywords
layer
nitride
type semiconductor
light emitting
emitting device
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Expired - Fee Related
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CN200880105858.7A
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English (en)
Chinese (zh)
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CN101796658A (zh
Inventor
孙孝根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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Publication of CN101796658A publication Critical patent/CN101796658A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
CN200880105858.7A 2007-09-06 2008-09-05 半导体发光器件及其制造方法 Expired - Fee Related CN101796658B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2007-0090685 2007-09-06
KR1020070090685A KR101459754B1 (ko) 2007-09-06 2007-09-06 반도체 발광소자 및 그 제조방법
PCT/KR2008/005266 WO2009031858A2 (en) 2007-09-06 2008-09-05 Semiconductor light emitting device and method of fabricating the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310022156.5A Division CN103050590B (zh) 2007-09-06 2008-09-05 半导体发光器件

Publications (2)

Publication Number Publication Date
CN101796658A CN101796658A (zh) 2010-08-04
CN101796658B true CN101796658B (zh) 2013-03-13

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN200880105858.7A Expired - Fee Related CN101796658B (zh) 2007-09-06 2008-09-05 半导体发光器件及其制造方法
CN201310022156.5A Expired - Fee Related CN103050590B (zh) 2007-09-06 2008-09-05 半导体发光器件

Family Applications After (1)

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CN201310022156.5A Expired - Fee Related CN103050590B (zh) 2007-09-06 2008-09-05 半导体发光器件

Country Status (6)

Country Link
US (1) US8299493B2 (enExample)
EP (1) EP2195862B1 (enExample)
JP (1) JP2010538491A (enExample)
KR (1) KR101459754B1 (enExample)
CN (2) CN101796658B (enExample)
WO (1) WO2009031858A2 (enExample)

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US8994052B2 (en) * 2008-03-04 2015-03-31 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
US8860183B2 (en) * 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
KR101220433B1 (ko) * 2009-06-10 2013-02-04 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
EP2472604B1 (en) 2009-08-26 2020-09-09 Seoul Viosys Co., Ltd Method for manufacturing a light-emitting device
US8597961B2 (en) * 2009-10-20 2013-12-03 Walsin Lihwa Corporation Method for improving internal quantum efficiency of group-III nitride-based light emitting device
KR100999684B1 (ko) * 2009-10-21 2010-12-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
KR20120092325A (ko) 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법
WO2013063020A1 (en) * 2011-10-24 2013-05-02 The Regents Of The University Of California SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N
WO2013133593A1 (ko) * 2012-03-08 2013-09-12 서울옵토디바이스주식회사 광추출 효율이 개선된 발광다이오드 및 그 제조방법
CN102738334B (zh) * 2012-06-19 2015-07-08 厦门市三安光电科技有限公司 具有电流扩展层的发光二极管及其制作方法
JP6181661B2 (ja) * 2012-10-22 2017-08-16 シャープ株式会社 窒化物半導体発光素子
TWI539625B (zh) * 2013-10-22 2016-06-21 璨圓光電股份有限公司 半導體發光元件及其製造方法
CN113363358B (zh) * 2021-05-31 2022-06-03 厦门乾照光电股份有限公司 一种led芯片

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CN1881630A (zh) * 2005-05-24 2006-12-20 Lg电子株式会社 杆型发光器件及其制造方法
TW200705706A (en) * 2005-07-25 2007-02-01 Formosa Epitaxy Inc Light emitting diode structure
CN101009342A (zh) * 2006-01-26 2007-08-01 璨圆光电股份有限公司 发光二极管结构

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CN1461499A (zh) * 2001-03-09 2003-12-10 索尼公司 显示装置及其制造方法
CN1881630A (zh) * 2005-05-24 2006-12-20 Lg电子株式会社 杆型发光器件及其制造方法
TW200705706A (en) * 2005-07-25 2007-02-01 Formosa Epitaxy Inc Light emitting diode structure
CN101009342A (zh) * 2006-01-26 2007-08-01 璨圆光电股份有限公司 发光二极管结构

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Also Published As

Publication number Publication date
EP2195862A2 (en) 2010-06-16
EP2195862A4 (en) 2014-01-08
KR101459754B1 (ko) 2014-11-13
WO2009031858A3 (en) 2009-05-14
KR20090025670A (ko) 2009-03-11
CN103050590A (zh) 2013-04-17
US8299493B2 (en) 2012-10-30
CN101796658A (zh) 2010-08-04
US20100252859A1 (en) 2010-10-07
WO2009031858A2 (en) 2009-03-12
EP2195862B1 (en) 2017-01-18
JP2010538491A (ja) 2010-12-09
CN103050590B (zh) 2016-06-29

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Effective date of registration: 20210811

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130313