KR101457882B1 - 안트라센 유도체, 및 안트라센 유도체를 사용한 발광 소자,발광 장치, 전자 기기 - Google Patents
안트라센 유도체, 및 안트라센 유도체를 사용한 발광 소자,발광 장치, 전자 기기 Download PDFInfo
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- KR101457882B1 KR101457882B1 KR1020070106689A KR20070106689A KR101457882B1 KR 101457882 B1 KR101457882 B1 KR 101457882B1 KR 1020070106689 A KR1020070106689 A KR 1020070106689A KR 20070106689 A KR20070106689 A KR 20070106689A KR 101457882 B1 KR101457882 B1 KR 101457882B1
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- 0 C*(*)**1c2ccc(**)cc2-c2cc(*)ccc12 Chemical compound C*(*)**1c2ccc(**)cc2-c2cc(*)ccc12 0.000 description 12
- KUBSCXXKQGDPPD-UHFFFAOYSA-N Brc(cc1)cc(c2c3cccc2)c1[n]3-c1ccccc1 Chemical compound Brc(cc1)cc(c2c3cccc2)c1[n]3-c1ccccc1 KUBSCXXKQGDPPD-UHFFFAOYSA-N 0.000 description 1
- YGJUMOILDARSAT-UHFFFAOYSA-N CC1(C=CC=NC1C=C1)C=C1c(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2-c(cc2)cc3c2nccc3)c2c1c(N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc3)c3c3ccccc13)ccc2 Chemical compound CC1(C=CC=NC1C=C1)C=C1c(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2-c(cc2)cc3c2nccc3)c2c1c(N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc3)c3c3ccccc13)ccc2 YGJUMOILDARSAT-UHFFFAOYSA-N 0.000 description 1
- XPNZWCHRDXLMTQ-UHFFFAOYSA-N CCCc(cc1)cc(c2cc(C(C)CC)ccc22)c1[n]2-c(cc1)ccc1N(C)c1ccccc1 Chemical compound CCCc(cc1)cc(c2cc(C(C)CC)ccc22)c1[n]2-c(cc1)ccc1N(C)c1ccccc1 XPNZWCHRDXLMTQ-UHFFFAOYSA-N 0.000 description 1
- BOFWNORMXBYWPM-UHFFFAOYSA-N CCCc(cc1c2c3ccc(N(C)c4ccccc4)c2)ccc1[n]3-c1ccccc1 Chemical compound CCCc(cc1c2c3ccc(N(C)c4ccccc4)c2)ccc1[n]3-c1ccccc1 BOFWNORMXBYWPM-UHFFFAOYSA-N 0.000 description 1
- FXMHZQLQHDHPKF-UHFFFAOYSA-N CN(c1ccccc1)c(cc1)cc(c2ccccc22)c1[n]2-c1cc(cccc2)c2cc1 Chemical compound CN(c1ccccc1)c(cc1)cc(c2ccccc22)c1[n]2-c1cc(cccc2)c2cc1 FXMHZQLQHDHPKF-UHFFFAOYSA-N 0.000 description 1
- UWMBBWFVTORMHI-UHFFFAOYSA-N COC(c(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2C(OC)=O)c2c1ccc(N(c1ccccc1)c(cc1)ccc1N(c1ccccc1)c1ccccc1)c2)=O Chemical compound COC(c(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2C(OC)=O)c2c1ccc(N(c1ccccc1)c(cc1)ccc1N(c1ccccc1)c1ccccc1)c2)=O UWMBBWFVTORMHI-UHFFFAOYSA-N 0.000 description 1
- KBHNRSXWGATCNU-UHFFFAOYSA-N COc(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2OC)c2c1ccc(N(c1ccccc1)c(cc1)ccc1N(c1ccccc1)c1ccccc1)c2 Chemical compound COc(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2OC)c2c1ccc(N(c1ccccc1)c(cc1)ccc1N(c1ccccc1)c1ccccc1)c2 KBHNRSXWGATCNU-UHFFFAOYSA-N 0.000 description 1
- GLCVZTFXHIGXHI-UHFFFAOYSA-N FC(c(cccc1)c1-c(c1ccc2)c(cccc3)c3c(-c3c(C(F)(F)F)cccc3)c1c2N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc2)c2c2c1cccc2)(F)F Chemical compound FC(c(cccc1)c1-c(c1ccc2)c(cccc3)c3c(-c3c(C(F)(F)F)cccc3)c1c2N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc2)c2c2c1cccc2)(F)F GLCVZTFXHIGXHI-UHFFFAOYSA-N 0.000 description 1
- QGAPTSUSBRNRQX-UHFFFAOYSA-N Fc(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2F)c2c1cccc2N(c1ccccc1)c(cc1)ccc1-[n]1c2ccccc2c2c1cccc2 Chemical compound Fc(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2F)c2c1cccc2N(c1ccccc1)c(cc1)ccc1-[n]1c2ccccc2c2c1cccc2 QGAPTSUSBRNRQX-UHFFFAOYSA-N 0.000 description 1
- VREMYNVVGUXHBU-UHFFFAOYSA-N Fc1cc(-c(c2ccc3)c(cccc4)c4c(-c4cc(F)ccc4)c2c3N(c2ccccc2)c(cc2)cc(c3c4cccc3)c2[n]4-c2ccccc2)ccc1 Chemical compound Fc1cc(-c(c2ccc3)c(cccc4)c4c(-c4cc(F)ccc4)c2c3N(c2ccccc2)c(cc2)cc(c3c4cccc3)c2[n]4-c2ccccc2)ccc1 VREMYNVVGUXHBU-UHFFFAOYSA-N 0.000 description 1
- VRJNSVHDFCZWGR-UHFFFAOYSA-N OC(c(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2C(O)=O)c2c1cccc2N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc2)c2c2c1cccc2)=O Chemical compound OC(c(cc1)ccc1-c1c(cccc2)c2c(-c(cc2)ccc2C(O)=O)c2c1cccc2N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc2)c2c2c1cccc2)=O VRJNSVHDFCZWGR-UHFFFAOYSA-N 0.000 description 1
- QKVDQLAWOPFNCG-UHFFFAOYSA-N OC(c(cccc1)c1-c1c(cccc2)c2c(-c(cccc2)c2C(O)=O)c2c1ccc(N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc3)c3c3c1cccc3)c2)=O Chemical compound OC(c(cccc1)c1-c1c(cccc2)c2c(-c(cccc2)c2C(O)=O)c2c1ccc(N(c1ccccc1)c(cc1)ccc1-[n]1c(cccc3)c3c3c1cccc3)c2)=O QKVDQLAWOPFNCG-UHFFFAOYSA-N 0.000 description 1
- AKFQJTNMUYFFSM-UHFFFAOYSA-N OC(c(cccc1)c1-c1c(cccc2)c2c(-c(cccc2)c2C(O)=O)c2c1ccc(N(c1ccccc1)c(cc1c3c4cccc3)ccc1[n]4-c1ccccc1)c2)=O Chemical compound OC(c(cccc1)c1-c1c(cccc2)c2c(-c(cccc2)c2C(O)=O)c2c1ccc(N(c1ccccc1)c(cc1c3c4cccc3)ccc1[n]4-c1ccccc1)c2)=O AKFQJTNMUYFFSM-UHFFFAOYSA-N 0.000 description 1
- BPDQKFCZDKRFTG-UHFFFAOYSA-N OC(c1ccccc1)(c1ccccc1C1(C2=CCCC=C2)O)c2c1cccc2 Chemical compound OC(c1ccccc1)(c1ccccc1C1(C2=CCCC=C2)O)c2c1cccc2 BPDQKFCZDKRFTG-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N c(cc1)ccc1-c1c(ccc(c2ncc3)c3-c3ccccc3)c2ncc1 Chemical compound c(cc1)ccc1-c1c(ccc(c2ncc3)c3-c3ccccc3)c2ncc1 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N c(cc1)ccc1-c1c(cccc2)c2c(-c2ccccc2)c2c1cccc2 Chemical compound c(cc1)ccc1-c1c(cccc2)c2c(-c2ccccc2)c2c1cccc2 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- LNVYXJAEJXMDMD-UHFFFAOYSA-N c(cc1)ccc1N(c(cc1c2c3cccc2)ccc1[n]3-c1ccccc1)c(cc1)cc2c1c(-c(cc1)ccc1-c1cc3ccncc3cc1)c(cccc1)c1c2-c(cc1)ccc1-c1cc2ccncc2cc1 Chemical compound c(cc1)ccc1N(c(cc1c2c3cccc2)ccc1[n]3-c1ccccc1)c(cc1)cc2c1c(-c(cc1)ccc1-c1cc3ccncc3cc1)c(cccc1)c1c2-c(cc1)ccc1-c1cc2ccncc2cc1 LNVYXJAEJXMDMD-UHFFFAOYSA-N 0.000 description 1
- OHIXUDPNDXVAIT-UHFFFAOYSA-N c(cc1)ccc1N(c1ccccc1)c(cc1)ccc1N(c1ccccc1)c(cc1)cc2c1c(-c(cc1)ccc1-c1ncccc1)c(cccc1)c1c2-c(cc1)ccc1-c1ncccc1 Chemical compound c(cc1)ccc1N(c1ccccc1)c(cc1)ccc1N(c1ccccc1)c(cc1)cc2c1c(-c(cc1)ccc1-c1ncccc1)c(cccc1)c1c2-c(cc1)ccc1-c1ncccc1 OHIXUDPNDXVAIT-UHFFFAOYSA-N 0.000 description 1
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JPJP-P-2006-00288924 | 2006-10-24 | ||
JP2006288924 | 2006-10-24 |
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KR20080036934A KR20080036934A (ko) | 2008-04-29 |
KR101457882B1 true KR101457882B1 (ko) | 2014-11-04 |
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KR1020070106689A KR101457882B1 (ko) | 2006-10-24 | 2007-10-23 | 안트라센 유도체, 및 안트라센 유도체를 사용한 발광 소자,발광 장치, 전자 기기 |
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US7540978B2 (en) * | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
DE502005009802D1 (de) * | 2005-11-10 | 2010-08-05 | Novaled Ag | Dotiertes organisches Halbleitermaterial |
US7919010B2 (en) * | 2005-12-22 | 2011-04-05 | Novaled Ag | Doped organic semiconductor material |
EP1837927A1 (de) * | 2006-03-22 | 2007-09-26 | Novaled AG | Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern |
ES2310380T3 (es) | 2006-03-21 | 2009-01-01 | Novaled Ag | Radical o dirradical heterociclicos, sus dimeros, oligomeros, polimeros, compuestos diespiro y policiclos, su utilizacion, material semiconductor organico asi como componente electronico. |
CN103396324B (zh) | 2006-04-28 | 2015-10-21 | 株式会社半导体能源研究所 | 蒽衍生物以及使用蒽衍生物的发光元件、发光器件和电子设备 |
US7935854B2 (en) * | 2006-10-03 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Stilbene derivative, light-emitting element, display apparatus, and electronic appliance |
US7911135B2 (en) * | 2006-11-29 | 2011-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light emitting device, electronic appliance, and method of manufacturing the same |
TWI437075B (zh) | 2006-12-28 | 2014-05-11 | Semiconductor Energy Lab | 蒽衍生物及使用該蒽衍生物之發光裝置 |
DE102007012794B3 (de) * | 2007-03-16 | 2008-06-19 | Novaled Ag | Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial |
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- 2007-10-12 DE DE602007008337T patent/DE602007008337D1/de active Active
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JP2003313156A (ja) | 2002-04-19 | 2003-11-06 | Idemitsu Kosan Co Ltd | 新規アントラセン化合物及びそれを利用した有機エレクトロルミネッセンス素子 |
JP2004095850A (ja) | 2002-08-30 | 2004-03-25 | Mitsubishi Chemicals Corp | 有機トランジスタ |
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EP1918350A3 (en) | 2008-11-26 |
US8110980B2 (en) | 2012-02-07 |
EP1918350A2 (en) | 2008-05-07 |
EP1918350B1 (en) | 2010-08-11 |
US7674914B2 (en) | 2010-03-09 |
US20080103315A1 (en) | 2008-05-01 |
KR20080036934A (ko) | 2008-04-29 |
US20100164376A1 (en) | 2010-07-01 |
DE602007008337D1 (de) | 2010-09-23 |
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