KR101454063B1 - 리소그래피 장치 및 물품의 제조 방법 - Google Patents

리소그래피 장치 및 물품의 제조 방법 Download PDF

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KR101454063B1
KR101454063B1 KR1020110048447A KR20110048447A KR101454063B1 KR 101454063 B1 KR101454063 B1 KR 101454063B1 KR 1020110048447 A KR1020110048447 A KR 1020110048447A KR 20110048447 A KR20110048447 A KR 20110048447A KR 101454063 B1 KR101454063 B1 KR 101454063B1
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detection unit
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KR20110132238A (ko
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신이찌로 고가
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
KR1020110048447A 2010-05-31 2011-05-23 리소그래피 장치 및 물품의 제조 방법 Active KR101454063B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-124614 2010-05-31
JP2010124614A JP5597031B2 (ja) 2010-05-31 2010-05-31 リソグラフィ装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
KR20110132238A KR20110132238A (ko) 2011-12-07
KR101454063B1 true KR101454063B1 (ko) 2014-10-27

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KR1020110048447A Active KR101454063B1 (ko) 2010-05-31 2011-05-23 리소그래피 장치 및 물품의 제조 방법

Country Status (4)

Country Link
US (1) US20110290136A1 (https=)
JP (1) JP5597031B2 (https=)
KR (1) KR101454063B1 (https=)
TW (1) TWI447536B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5938218B2 (ja) 2012-01-16 2016-06-22 キヤノン株式会社 インプリント装置、物品の製造方法およびインプリント方法
JP6066565B2 (ja) * 2012-01-31 2017-01-25 キヤノン株式会社 インプリント装置、および、物品の製造方法
NL2010166A (en) * 2012-02-22 2013-08-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5868215B2 (ja) * 2012-02-27 2016-02-24 キヤノン株式会社 インプリント装置およびインプリント方法、それを用いた物品の製造方法
JP6029495B2 (ja) * 2012-03-12 2016-11-24 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
JP6180131B2 (ja) * 2012-03-19 2017-08-16 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP6188382B2 (ja) 2013-04-03 2017-08-30 キヤノン株式会社 インプリント装置および物品の製造方法
JP5989610B2 (ja) 2013-08-05 2016-09-07 株式会社東芝 マスクセット設計方法およびマスクセット設計プログラム
CA2933789C (en) 2014-03-06 2020-02-25 Cnh Industrial Canada, Ltd. Apparatus and method for removing holes in production of biocomposite materials
JP6401501B2 (ja) 2014-06-02 2018-10-10 キヤノン株式会社 インプリント装置、および物品の製造方法
US10331027B2 (en) 2014-09-12 2019-06-25 Canon Kabushiki Kaisha Imprint apparatus, imprint system, and method of manufacturing article
JP6506521B2 (ja) 2014-09-17 2019-04-24 キヤノン株式会社 インプリント方法、インプリント装置、および物品の製造方法
JP6555868B2 (ja) 2014-09-30 2019-08-07 キヤノン株式会社 パターン形成方法、および物品の製造方法
JP6457773B2 (ja) 2014-10-07 2019-01-23 キヤノン株式会社 インプリント方法、インプリント装置及び物品製造方法
JP6799397B2 (ja) * 2015-08-10 2020-12-16 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6726987B2 (ja) * 2016-03-17 2020-07-22 キヤノン株式会社 インプリント装置および物品製造方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN113608418B (zh) * 2016-09-30 2023-12-15 株式会社尼康 测量系统及基板处理系统、及元件制造方法
JP7088552B2 (ja) * 2016-12-08 2022-06-21 株式会社ブイ・テクノロジー 近接露光装置及び近接露光方法
JP2019102537A (ja) * 2017-11-29 2019-06-24 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP7116605B2 (ja) * 2018-06-28 2022-08-10 キヤノン株式会社 インプリント材のパターンを形成するための方法、インプリント装置、インプリント装置の調整方法、および、物品製造方法
US10901327B2 (en) 2018-12-20 2021-01-26 Canon Kabushiki Kaisha Automatic defect analyzer for nanoimprint lithography using image analysis
JP7324051B2 (ja) * 2019-05-28 2023-08-09 キヤノン株式会社 リソグラフィ装置、物品の製造方法及び制御方法
JP7433925B2 (ja) * 2020-01-20 2024-02-20 キヤノン株式会社 インプリント方法、インプリント装置、および物品製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007509769A (ja) 2003-10-02 2007-04-19 モレキュラー・インプリンツ・インコーポレーテッド 単一位相流体インプリント・リソグラフィ法
KR20070103316A (ko) * 2006-04-18 2007-10-23 캐논 가부시끼가이샤 패턴전사장치, 임프린트 장치 및 패턴전사방법
JP2009266841A (ja) 2008-04-21 2009-11-12 Toshiba Corp ナノインプリント方法
JP2010080631A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法

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JPH04237112A (ja) * 1991-01-22 1992-08-25 Nec Corp 露光装置における位置合わせ方法
JPH08330214A (ja) * 1995-06-01 1996-12-13 Nikon Corp アライメント精度評価方法
JP4109736B2 (ja) * 1997-11-14 2008-07-02 キヤノン株式会社 位置ずれ検出方法
JP2004006527A (ja) * 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
CN101427185B (zh) * 2006-04-18 2013-03-20 佳能株式会社 对准方法、压印方法、对准设备和压印设备
JP2010080630A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007509769A (ja) 2003-10-02 2007-04-19 モレキュラー・インプリンツ・インコーポレーテッド 単一位相流体インプリント・リソグラフィ法
KR20070103316A (ko) * 2006-04-18 2007-10-23 캐논 가부시끼가이샤 패턴전사장치, 임프린트 장치 및 패턴전사방법
JP2009266841A (ja) 2008-04-21 2009-11-12 Toshiba Corp ナノインプリント方法
JP2010080631A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法

Also Published As

Publication number Publication date
JP5597031B2 (ja) 2014-10-01
TWI447536B (zh) 2014-08-01
JP2011253839A (ja) 2011-12-15
KR20110132238A (ko) 2011-12-07
TW201142549A (en) 2011-12-01
US20110290136A1 (en) 2011-12-01

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