KR101441720B1 - 유전체 커버를 갖는 에지 전극 - Google Patents

유전체 커버를 갖는 에지 전극 Download PDF

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Publication number
KR101441720B1
KR101441720B1 KR1020097018600A KR20097018600A KR101441720B1 KR 101441720 B1 KR101441720 B1 KR 101441720B1 KR 1020097018600 A KR1020097018600 A KR 1020097018600A KR 20097018600 A KR20097018600 A KR 20097018600A KR 101441720 B1 KR101441720 B1 KR 101441720B1
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South Korea
Prior art keywords
edge electrode
substrate
lower edge
electrode
dielectric layer
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KR1020097018600A
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Korean (ko)
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KR20090129417A (ko
KR101441720B9 (ko
Inventor
그레고리 에스 섹스턴
앤드류 디 베일리
안드라스 커티
윤상 김
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램 리써치 코포레이션
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
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Publication of KR101441720B9 publication Critical patent/KR101441720B9/ko
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    • H10P50/242—
    • H10P70/54—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H10P50/267—
    • H10P50/283—
    • H10P50/287—
    • H10P70/20—
    • H10P72/50—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
KR1020097018600A 2007-03-05 2008-02-14 유전체 커버를 갖는 에지 전극 Ceased KR101441720B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US89306907P 2007-03-05 2007-03-05
US89307407P 2007-03-05 2007-03-05
US60/893,074 2007-03-05
US60/893,069 2007-03-05
US11/758,584 US9184043B2 (en) 2006-05-24 2007-06-05 Edge electrodes with dielectric covers
US11/758,584 2007-06-05
PCT/US2008/054027 WO2008109240A1 (en) 2007-03-05 2008-02-14 Edge electrodes with dielectric covers

Publications (3)

Publication Number Publication Date
KR20090129417A KR20090129417A (ko) 2009-12-16
KR101441720B1 true KR101441720B1 (ko) 2014-09-17
KR101441720B9 KR101441720B9 (ko) 2024-03-25

Family

ID=39738668

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018600A Ceased KR101441720B1 (ko) 2007-03-05 2008-02-14 유전체 커버를 갖는 에지 전극

Country Status (6)

Country Link
US (2) US9184043B2 (enExample)
JP (1) JP4975113B2 (enExample)
KR (1) KR101441720B1 (enExample)
SG (1) SG179482A1 (enExample)
TW (1) TWI443737B (enExample)
WO (1) WO2008109240A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121732A (ko) * 2019-04-15 2020-10-26 도쿄엘렉트론가부시키가이샤 클리닝 처리 방법 및 플라즈마 처리 장치
WO2024219650A1 (ko) * 2023-04-18 2024-10-24 피에스케이 주식회사 기판 처리 장치

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9184043B2 (en) * 2006-05-24 2015-11-10 Lam Research Corporation Edge electrodes with dielectric covers
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
US20080156772A1 (en) * 2006-12-29 2008-07-03 Yunsang Kim Method and apparatus for wafer edge processing
US8398778B2 (en) * 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
KR100801711B1 (ko) * 2007-02-27 2008-02-11 삼성전자주식회사 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
KR101039587B1 (ko) 2010-01-05 2011-06-09 (주)케이에스텍 웨이퍼 에지 식각장치
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
GB2480873B (en) * 2010-06-04 2014-06-11 Plastic Logic Ltd Reducing defects in electronic apparatus
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
SG193614A1 (en) * 2011-05-10 2013-10-30 Lam Res Corp Semiconductor processing system having multiple decoupled plasma sources
US9293303B2 (en) 2013-08-30 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Low contamination chamber for surface activation
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TWI486996B (zh) * 2013-12-04 2015-06-01 Ind Tech Res Inst 電漿裝置及電漿裝置的操作方法
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
KR101722382B1 (ko) * 2016-01-08 2017-04-03 주식회사 윈텔 플라즈마 처리 장치
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
CN111095523A (zh) * 2018-01-22 2020-05-01 应用材料公司 利用经供电的边缘环的处理
JP7502039B2 (ja) * 2019-03-28 2024-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置
US11676804B2 (en) 2019-07-01 2023-06-13 Semes Co., Ltd. Apparatus and method for treating substrate
US11081643B1 (en) 2020-01-21 2021-08-03 International Business Machines Corporation Bevel metal removal using ion beam etch
US12272545B2 (en) 2020-03-19 2025-04-08 International Business Machines Corporation Embedded metal contamination removal from BEOL wafers
JP2021197244A (ja) * 2020-06-11 2021-12-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2021197524A (ja) 2020-06-18 2021-12-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI888680B (zh) * 2020-12-18 2025-07-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102767880B1 (ko) 2021-11-02 2025-02-17 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP2025068434A (ja) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090125084A (ko) * 2007-03-05 2009-12-03 램 리써치 코포레이션 가변 전력을 갖는 에지 전극
KR20090129417A (ko) * 2007-03-05 2009-12-16 램 리써치 코포레이션 유전체 커버를 갖는 에지 전극

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
KR100276736B1 (ko) * 1993-10-20 2001-03-02 히가시 데쓰로 플라즈마 처리장치
JPH07142449A (ja) * 1993-11-22 1995-06-02 Kawasaki Steel Corp プラズマエッチング装置
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2001044147A (ja) 1999-08-04 2001-02-16 Mitsubishi Materials Silicon Corp 半導体ウェーハの面取り面の形成方法
US20010042513A1 (en) 1999-10-13 2001-11-22 Chien-Teh Kao Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6646857B2 (en) * 2001-03-30 2003-11-11 Lam Research Corporation Semiconductor wafer lifting device and methods for implementing the same
KR100442194B1 (ko) 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
KR100447891B1 (ko) * 2002-03-04 2004-09-08 강효상 반도체 웨이퍼의 건식 식각 방법
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US20040137745A1 (en) * 2003-01-10 2004-07-15 International Business Machines Corporation Method and apparatus for removing backside edge polymer
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
JP4122004B2 (ja) * 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US6869895B1 (en) * 2003-09-30 2005-03-22 International Business Machines Corporation Method for adjusting capacitance of an on-chip capacitor
KR100532354B1 (ko) 2004-05-31 2005-11-30 삼성전자주식회사 식각 영역 조절 장치 및 웨이퍼 에지 식각 장치 그리고웨이퍼 에지 식각 방법
JP4502198B2 (ja) 2004-10-21 2010-07-14 ルネサスエレクトロニクス株式会社 エッチング装置およびエッチング方法
JP4566789B2 (ja) * 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7535688B2 (en) * 2005-03-25 2009-05-19 Tokyo Electron Limited Method for electrically discharging substrate, substrate processing apparatus and program
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
KR20070001493A (ko) 2005-06-29 2007-01-04 주식회사 하이닉스반도체 웨이퍼 베벨 식각용 디에프브이 장치
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
US20070068623A1 (en) * 2005-09-27 2007-03-29 Yunsang Kim Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
WO2009085238A1 (en) * 2007-12-27 2009-07-09 Lam Research Corporation Copper discoloration prevention following bevel etch process
US8414790B2 (en) * 2008-11-13 2013-04-09 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090125084A (ko) * 2007-03-05 2009-12-03 램 리써치 코포레이션 가변 전력을 갖는 에지 전극
KR20090129417A (ko) * 2007-03-05 2009-12-16 램 리써치 코포레이션 유전체 커버를 갖는 에지 전극

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121732A (ko) * 2019-04-15 2020-10-26 도쿄엘렉트론가부시키가이샤 클리닝 처리 방법 및 플라즈마 처리 장치
KR102751423B1 (ko) * 2019-04-15 2025-01-07 도쿄엘렉트론가부시키가이샤 클리닝 처리 방법 및 플라즈마 처리 장치
WO2024219650A1 (ko) * 2023-04-18 2024-10-24 피에스케이 주식회사 기판 처리 장치

Also Published As

Publication number Publication date
US9184043B2 (en) 2015-11-10
KR20090129417A (ko) 2009-12-16
US20160064215A1 (en) 2016-03-03
JP2010520646A (ja) 2010-06-10
TWI443737B (zh) 2014-07-01
SG179482A1 (en) 2012-04-27
US9564308B2 (en) 2017-02-07
US20090166326A1 (en) 2009-07-02
WO2008109240A1 (en) 2008-09-12
TW200901311A (en) 2009-01-01
JP4975113B2 (ja) 2012-07-11
KR101441720B9 (ko) 2024-03-25

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