JP4975113B2 - 誘電体カバーを伴うエッジ電極 - Google Patents

誘電体カバーを伴うエッジ電極 Download PDF

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Publication number
JP4975113B2
JP4975113B2 JP2009552790A JP2009552790A JP4975113B2 JP 4975113 B2 JP4975113 B2 JP 4975113B2 JP 2009552790 A JP2009552790 A JP 2009552790A JP 2009552790 A JP2009552790 A JP 2009552790A JP 4975113 B2 JP4975113 B2 JP 4975113B2
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edge electrode
processing chamber
substrate
bottom edge
plasma processing
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Japanese (ja)
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JP2010520646A (ja
JP2010520646A5 (enExample
Inventor
セクストン・グレゴリー・エス．
ベイリー・アンドリュー・ディー．
クシ・アンドラス
キム・ユンサン
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Lam Research Corp
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Lam Research Corp
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    • H10P50/242—
    • H10P70/54—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H10P50/267—
    • H10P50/283—
    • H10P50/287—
    • H10P70/20—
    • H10P72/50—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
JP2009552790A 2007-03-05 2008-02-14 誘電体カバーを伴うエッジ電極 Active JP4975113B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US89306907P 2007-03-05 2007-03-05
US89307407P 2007-03-05 2007-03-05
US60/893,074 2007-03-05
US60/893,069 2007-03-05
US11/758,584 US9184043B2 (en) 2006-05-24 2007-06-05 Edge electrodes with dielectric covers
US11/758,584 2007-06-05
PCT/US2008/054027 WO2008109240A1 (en) 2007-03-05 2008-02-14 Edge electrodes with dielectric covers

Publications (3)

Publication Number Publication Date
JP2010520646A JP2010520646A (ja) 2010-06-10
JP2010520646A5 JP2010520646A5 (enExample) 2011-04-14
JP4975113B2 true JP4975113B2 (ja) 2012-07-11

Family

ID=39738668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009552790A Active JP4975113B2 (ja) 2007-03-05 2008-02-14 誘電体カバーを伴うエッジ電極

Country Status (6)

Country Link
US (2) US9184043B2 (enExample)
JP (1) JP4975113B2 (enExample)
KR (1) KR101441720B1 (enExample)
SG (1) SG179482A1 (enExample)
TW (1) TWI443737B (enExample)
WO (1) WO2008109240A1 (enExample)

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US8398778B2 (en) * 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
KR100801711B1 (ko) * 2007-02-27 2008-02-11 삼성전자주식회사 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
KR101039587B1 (ko) 2010-01-05 2011-06-09 (주)케이에스텍 웨이퍼 에지 식각장치
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
GB2480873B (en) * 2010-06-04 2014-06-11 Plastic Logic Ltd Reducing defects in electronic apparatus
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
SG193614A1 (en) * 2011-05-10 2013-10-30 Lam Res Corp Semiconductor processing system having multiple decoupled plasma sources
US9293303B2 (en) 2013-08-30 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Low contamination chamber for surface activation
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TWI486996B (zh) * 2013-12-04 2015-06-01 Ind Tech Res Inst 電漿裝置及電漿裝置的操作方法
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
KR101722382B1 (ko) * 2016-01-08 2017-04-03 주식회사 윈텔 플라즈마 처리 장치
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
CN111095523A (zh) * 2018-01-22 2020-05-01 应用材料公司 利用经供电的边缘环的处理
JP7502039B2 (ja) * 2019-03-28 2024-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置
JP7462383B2 (ja) * 2019-04-15 2024-04-05 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
US11676804B2 (en) 2019-07-01 2023-06-13 Semes Co., Ltd. Apparatus and method for treating substrate
US11081643B1 (en) 2020-01-21 2021-08-03 International Business Machines Corporation Bevel metal removal using ion beam etch
US12272545B2 (en) 2020-03-19 2025-04-08 International Business Machines Corporation Embedded metal contamination removal from BEOL wafers
JP2021197244A (ja) * 2020-06-11 2021-12-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2021197524A (ja) 2020-06-18 2021-12-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI888680B (zh) * 2020-12-18 2025-07-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102767880B1 (ko) 2021-11-02 2025-02-17 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
KR20240154309A (ko) * 2023-04-18 2024-10-25 피에스케이 주식회사 기판 처리 장치
JP2025068434A (ja) * 2023-10-16 2025-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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Also Published As

Publication number Publication date
KR101441720B1 (ko) 2014-09-17
US9184043B2 (en) 2015-11-10
KR20090129417A (ko) 2009-12-16
US20160064215A1 (en) 2016-03-03
JP2010520646A (ja) 2010-06-10
TWI443737B (zh) 2014-07-01
SG179482A1 (en) 2012-04-27
US9564308B2 (en) 2017-02-07
US20090166326A1 (en) 2009-07-02
WO2008109240A1 (en) 2008-09-12
TW200901311A (en) 2009-01-01
KR101441720B9 (ko) 2024-03-25

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