KR101414091B1 - 전극용 글래스 조성물, 및 그것을 이용한 전극용 페이스트, 및 그것을 적용한 전자 부품 - Google Patents
전극용 글래스 조성물, 및 그것을 이용한 전극용 페이스트, 및 그것을 적용한 전자 부품 Download PDFInfo
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- KR101414091B1 KR101414091B1 KR1020137000407A KR20137000407A KR101414091B1 KR 101414091 B1 KR101414091 B1 KR 101414091B1 KR 1020137000407 A KR1020137000407 A KR 1020137000407A KR 20137000407 A KR20137000407 A KR 20137000407A KR 101414091 B1 KR101414091 B1 KR 101414091B1
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- South Korea
- Prior art keywords
- electrode
- glass composition
- weight
- electrodes
- particles
- Prior art date
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- 239000011521 glass Substances 0.000 title claims abstract description 371
- 239000000203 mixture Substances 0.000 title claims abstract description 276
- 239000002003 electrode paste Substances 0.000 claims abstract description 89
- 239000010949 copper Substances 0.000 claims abstract description 77
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011733 molybdenum Substances 0.000 claims abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 5
- 239000010937 tungsten Substances 0.000 claims abstract description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000002245 particle Substances 0.000 claims description 158
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 35
- 239000011230 binding agent Substances 0.000 claims description 33
- 239000011347 resin Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 33
- 239000002923 metal particle Substances 0.000 claims description 31
- 239000002904 solvent Substances 0.000 claims description 31
- 229910052723 transition metal Inorganic materials 0.000 claims description 24
- 150000003624 transition metals Chemical class 0.000 claims description 24
- 238000000605 extraction Methods 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical group CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 13
- 239000001856 Ethyl cellulose Substances 0.000 claims description 13
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical group CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 13
- 229920001249 ethyl cellulose Polymers 0.000 claims description 13
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000020 Nitrocellulose Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229920001220 nitrocellulos Polymers 0.000 claims description 5
- 229940116411 terpineol Drugs 0.000 claims description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N Vanadium(V) oxide Inorganic materials O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 3
- 229910003069 TeO2 Inorganic materials 0.000 claims 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 abstract description 22
- 239000011572 manganese Substances 0.000 abstract description 9
- 229910052748 manganese Inorganic materials 0.000 abstract description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 51
- 238000010304 firing Methods 0.000 description 46
- 239000000956 alloy Substances 0.000 description 41
- 229910045601 alloy Inorganic materials 0.000 description 41
- 229910016570 AlCu Inorganic materials 0.000 description 37
- 239000010410 layer Substances 0.000 description 28
- 239000010419 fine particle Substances 0.000 description 24
- 229910052745 lead Inorganic materials 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 22
- 238000001035 drying Methods 0.000 description 21
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 20
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 18
- 238000007639 printing Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000000843 powder Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- 230000007613 environmental effect Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 238000002845 discoloration Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000004455 differential thermal analysis Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000012798 spherical particle Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 101100000419 Autographa californica nuclear polyhedrosis virus AC41 gene Proteins 0.000 description 2
- 229910018565 CuAl Inorganic materials 0.000 description 2
- 102100039851 DNA-directed RNA polymerases I and III subunit RPAC1 Human genes 0.000 description 2
- 101710112289 DNA-directed RNA polymerases I and III subunit RPAC1 Proteins 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 101100408296 Autographa californica nuclear polyhedrosis virus AC24 gene Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- AAOVKJBEBIDNHE-UHFFFAOYSA-N diazepam Chemical compound N=1CC(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 AAOVKJBEBIDNHE-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- -1 that is Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 229940072690 valium Drugs 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010179919 | 2010-08-11 | ||
| JPJP-P-2010-179919 | 2010-08-11 | ||
| PCT/JP2011/067881 WO2012020694A1 (ja) | 2010-08-11 | 2011-08-04 | 電極用ガラス組成物、及びそれを用いた電極用ペースト、並びにそれを適用した電子部品 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20130041076A KR20130041076A (ko) | 2013-04-24 |
| KR101414091B1 true KR101414091B1 (ko) | 2014-07-02 |
Family
ID=45567663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137000407A KR101414091B1 (ko) | 2010-08-11 | 2011-08-04 | 전극용 글래스 조성물, 및 그것을 이용한 전극용 페이스트, 및 그것을 적용한 전자 부품 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5826178B2 (zh) |
| KR (1) | KR101414091B1 (zh) |
| CN (1) | CN103052605B (zh) |
| TW (1) | TWI448444B (zh) |
| WO (1) | WO2012020694A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200000317A (ko) * | 2018-06-22 | 2020-01-02 | 알무스이앤티 주식회사 | Arche glass를 이용한 태양전지 전극용 페이스트 조성물 및 이를 사용한 태양전지 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012106891A (ja) * | 2010-11-18 | 2012-06-07 | Asahi Glass Co Ltd | 封着用無鉛ガラス、封着材料、封着材料ペースト |
| US8691119B2 (en) | 2011-08-11 | 2014-04-08 | E I Du Pont De Nemours And Company | Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices |
| JP5816565B2 (ja) * | 2012-01-26 | 2015-11-18 | 株式会社日立産機システム | インク、被印字基材、印字装置、印字方法、被印字基材の製造方法 |
| JP5732414B2 (ja) | 2012-01-26 | 2015-06-10 | 株式会社日立製作所 | 接合体および半導体モジュール |
| US20150047700A1 (en) * | 2012-02-28 | 2015-02-19 | Kyocera Corporation | Conductive paste for solar cell electrodes, solar cell, and method for manufacturing solar cell |
| CN103377751B (zh) * | 2012-04-17 | 2018-01-02 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于太阳能电池触点的导电厚膜膏 |
| SG194313A1 (en) * | 2012-04-17 | 2013-11-29 | Heraeus Precious Metals North America Conshohocken Llc | Inorganic reaction system for electroconductive paste composition |
| JPWO2014102915A1 (ja) * | 2012-12-26 | 2017-01-12 | 株式会社日立製作所 | 低融点ガラス樹脂複合材料と、それを用いた電子・電気機器、アキシャルギャップモータ |
| KR102143417B1 (ko) * | 2013-02-01 | 2020-08-11 | 나믹스 가부시끼가이샤 | 유리 프릿 |
| TWI493729B (zh) * | 2013-02-08 | 2015-07-21 | Giga Solar Materials Corp | 用於太陽能電池正面電極之導電漿及其製造方法 |
| US9373558B2 (en) * | 2013-02-22 | 2016-06-21 | Hitachi, Ltd. | Resin-sealed electronic control device |
| KR101882525B1 (ko) * | 2013-04-11 | 2018-07-26 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| KR101590227B1 (ko) * | 2013-06-05 | 2016-01-29 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| CN105474408B (zh) * | 2013-08-30 | 2018-01-02 | 京瓷株式会社 | 太阳能电池元件及其制造方法 |
| JP6204172B2 (ja) * | 2013-12-03 | 2017-09-27 | 株式会社ノリタケカンパニーリミテド | 放熱性基板 |
| TWI652694B (zh) * | 2014-01-17 | 2019-03-01 | 日商納美仕有限公司 | 導電性糊及使用該導電性糊製造半導體裝置之方法 |
| JP5687369B1 (ja) * | 2014-01-29 | 2015-03-18 | 保雄 寺谷 | 空気清浄機 |
| KR102004792B1 (ko) * | 2014-06-24 | 2019-07-29 | 삼성전기주식회사 | 적층 전자부품 및 내부전극용 도전성 페이스트 조성물 |
| WO2016017240A1 (ja) * | 2014-07-28 | 2016-02-04 | 株式会社村田製作所 | 導電性ペースト、及びガラス物品 |
| WO2016043095A1 (ja) * | 2014-09-19 | 2016-03-24 | 株式会社日立製作所 | 放熱構造体及びそれを利用した半導体モジュール |
| KR101696985B1 (ko) * | 2014-12-30 | 2017-01-17 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| CN107360731B (zh) * | 2015-02-02 | 2019-08-09 | 京瓷株式会社 | 太阳能电池元件及其制造方法 |
| JP2018109073A (ja) * | 2015-03-31 | 2018-07-12 | 株式会社日立製作所 | 複合材組成物、及びそれを用いたペースト剤 |
| KR20170108577A (ko) * | 2016-03-18 | 2017-09-27 | 대주전자재료 주식회사 | 태양전지용 무연 도전 페이스트 |
| CN107633894A (zh) * | 2016-07-19 | 2018-01-26 | 翌骅实业股份有限公司 | 具改质金属粒子的导电胶及其制造方法及太阳能电池组件 |
| JP6246877B1 (ja) * | 2016-09-08 | 2017-12-13 | Ｄｏｗａエレクトロニクス株式会社 | 導電性ペーストおよびその製造方法、ならびに太陽電池の製造方法 |
| DE102017111942A1 (de) * | 2017-05-31 | 2018-12-06 | Epcos Ag | Hybride Energieversorgungsschaltung, Verwendung einer hybriden Energieversorgungsschaltung und Verfahren zur Herstellung einer hybriden Energieversorgungsschaltung |
| JP2019021816A (ja) * | 2017-07-19 | 2019-02-07 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
| JP7172209B2 (ja) * | 2018-07-13 | 2022-11-16 | 日本電気硝子株式会社 | 封着材料 |
| US11177072B2 (en) * | 2019-08-16 | 2021-11-16 | Samsung Electro-Mechanics Co., Ltd. | Multilayer capacitor and board having the same mounted thereon |
| CN115038672A (zh) * | 2020-02-18 | 2022-09-09 | 日本电气硝子株式会社 | 玻璃组合物以及密封材料 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900016060A (ko) * | 1989-04-19 | 1990-11-12 | 허버트 제이. 범가튼 | 전자용도의 저연화점산화금속유리 |
| KR20080022088A (ko) * | 2005-06-03 | 2008-03-10 | 훼로코오포레이션 | 무연 태양 전지 컨택트 |
| JP2009209032A (ja) * | 2008-02-08 | 2009-09-17 | Hitachi Powdered Metals Co Ltd | ガラス組成物 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162147A (ja) * | 1983-03-03 | 1984-09-13 | Takeshi Nomura | ガラス |
| US5076876A (en) * | 1989-06-21 | 1991-12-31 | Diemat, Inc. | Method of attaching an electronic device to a substrate |
| JPH06121800A (ja) * | 1992-10-08 | 1994-05-06 | Olympus Optical Co Ltd | 歯科補綴物の製造方法 |
| US5334558A (en) * | 1992-10-19 | 1994-08-02 | Diemat, Inc. | Low temperature glass with improved thermal stress properties and method of use |
| JPH11349347A (ja) * | 1998-06-08 | 1999-12-21 | Asahi Glass Co Ltd | 結晶性低融点ガラス組成物 |
| JP2000265144A (ja) * | 1999-03-16 | 2000-09-26 | Sumitomo Bakelite Co Ltd | ダイアタッチペースト |
| JP3469168B2 (ja) * | 2000-07-05 | 2003-11-25 | 新光電気工業株式会社 | 配線基板及び半導体装置 |
| US6322620B1 (en) * | 2000-11-16 | 2001-11-27 | National Starch And Chemical Investment Holding Corporation | Conductive ink composition |
-
2011
- 2011-08-03 TW TW100127610A patent/TWI448444B/zh not_active IP Right Cessation
- 2011-08-04 JP JP2012528656A patent/JP5826178B2/ja not_active Expired - Fee Related
- 2011-08-04 CN CN201180037099.7A patent/CN103052605B/zh not_active Expired - Fee Related
- 2011-08-04 WO PCT/JP2011/067881 patent/WO2012020694A1/ja active Application Filing
- 2011-08-04 KR KR1020137000407A patent/KR101414091B1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900016060A (ko) * | 1989-04-19 | 1990-11-12 | 허버트 제이. 범가튼 | 전자용도의 저연화점산화금속유리 |
| KR20080022088A (ko) * | 2005-06-03 | 2008-03-10 | 훼로코오포레이션 | 무연 태양 전지 컨택트 |
| JP2009209032A (ja) * | 2008-02-08 | 2009-09-17 | Hitachi Powdered Metals Co Ltd | ガラス組成物 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200000317A (ko) * | 2018-06-22 | 2020-01-02 | 알무스이앤티 주식회사 | Arche glass를 이용한 태양전지 전극용 페이스트 조성물 및 이를 사용한 태양전지 |
| KR102122607B1 (ko) * | 2018-06-22 | 2020-06-12 | 에어티앤에스 주식회사 | Arche glass를 이용한 태양전지 전극용 페이스트 조성물 및 이를 사용한 태양전지 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103052605B (zh) | 2016-01-20 |
| JP5826178B2 (ja) | 2015-12-02 |
| TWI448444B (zh) | 2014-08-11 |
| CN103052605A (zh) | 2013-04-17 |
| KR20130041076A (ko) | 2013-04-24 |
| TW201213268A (en) | 2012-04-01 |
| JPWO2012020694A1 (ja) | 2013-10-28 |
| WO2012020694A1 (ja) | 2012-02-16 |
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