KR101404511B1 - 식각액 조성물, 및 다중금속막 식각 방법 - Google Patents

식각액 조성물, 및 다중금속막 식각 방법 Download PDF

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Publication number
KR101404511B1
KR101404511B1 KR1020120080621A KR20120080621A KR101404511B1 KR 101404511 B1 KR101404511 B1 KR 101404511B1 KR 1020120080621 A KR1020120080621 A KR 1020120080621A KR 20120080621 A KR20120080621 A KR 20120080621A KR 101404511 B1 KR101404511 B1 KR 101404511B1
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KR
South Korea
Prior art keywords
etchant composition
etching
weight
copper
chlorine
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KR1020120080621A
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English (en)
Korean (ko)
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KR20140014506A (ko
Inventor
서종현
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플란제 에스이
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Application filed by 플란제 에스이 filed Critical 플란제 에스이
Priority to KR1020120080621A priority Critical patent/KR101404511B1/ko
Priority to CN201310311074.2A priority patent/CN103572292B/zh
Priority to JP2013153020A priority patent/JP5867930B2/ja
Priority to TW102126565A priority patent/TWI500819B/zh
Publication of KR20140014506A publication Critical patent/KR20140014506A/ko
Application granted granted Critical
Publication of KR101404511B1 publication Critical patent/KR101404511B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Weting (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020120080621A 2012-07-24 2012-07-24 식각액 조성물, 및 다중금속막 식각 방법 KR101404511B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020120080621A KR101404511B1 (ko) 2012-07-24 2012-07-24 식각액 조성물, 및 다중금속막 식각 방법
CN201310311074.2A CN103572292B (zh) 2012-07-24 2013-07-23 蚀刻剂组合物以及用于蚀刻多层金属膜的方法
JP2013153020A JP5867930B2 (ja) 2012-07-24 2013-07-23 エッチング液組成物、及び多重金属膜のエッチング方法｛ｅｔｃｈａｎｔｃｏｍｐｏｓｉｔｉｏｎ、ａｎｄｍｅｔｈｏｄｆｏｒｅｔｃｈｉｎｇａｍｕｌｔｉ−ｌａｙｅｒｅｄｍｅｔａｌｆｉｌｍ｝
TW102126565A TWI500819B (zh) 2012-07-24 2013-07-24 蝕刻劑組合物以及用於蝕刻多層金屬膜的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120080621A KR101404511B1 (ko) 2012-07-24 2012-07-24 식각액 조성물, 및 다중금속막 식각 방법

Publications (2)

Publication Number Publication Date
KR20140014506A KR20140014506A (ko) 2014-02-06
KR101404511B1 true KR101404511B1 (ko) 2014-06-09

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KR1020120080621A KR101404511B1 (ko) 2012-07-24 2012-07-24 식각액 조성물, 및 다중금속막 식각 방법

Country Status (4)

Country Link
JP (1) JP5867930B2 (zh)
KR (1) KR101404511B1 (zh)
CN (1) CN103572292B (zh)
TW (1) TWI500819B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106170869B (zh) * 2014-03-07 2020-01-10 H.C.施塔克公司 用于电子装置中的金属化的蚀刻化学成份
CN104060267A (zh) * 2014-07-17 2014-09-24 深圳市卓力达电子有限公司 一种用于金属钼片的化学蚀刻方法
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
CN104498952B (zh) * 2014-11-24 2017-03-08 模德模具(东莞)有限公司 一种立体纹理氧化药水
KR102245660B1 (ko) * 2014-12-19 2021-04-28 동우 화인켐 주식회사 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 및 그 조성물을 사용하는 액정표시장치용 어레이 기판의 제조방법
CN106460150B (zh) * 2015-02-10 2020-01-10 大日本印刷株式会社 蒸镀掩模的制造方法、用于制作蒸镀掩模的金属板及其制造方法
CN108491103B (zh) * 2018-02-28 2021-09-17 信利半导体有限公司 一种双面ito产品的制作方法和双面ito产品
IL281436B2 (en) * 2018-09-12 2024-05-01 Fujifilm Electronic Mat Usa Inc Etching mixes
JP7398969B2 (ja) * 2019-03-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR20210088290A (ko) * 2020-01-06 2021-07-14 주식회사 이엔에프테크놀로지 식각액 조성물
CN114293160A (zh) * 2021-12-20 2022-04-08 洛阳高新四丰电子材料有限公司 一种钼合金溅射靶材的制备工艺
CN114457335B (zh) * 2022-02-15 2023-10-27 江西省科学院应用物理研究所 一种铜铁碳合金金相浸蚀剂及其使用方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070017762A (ko) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법
KR20120019196A (ko) * 2010-08-25 2012-03-06 플란제 에스이 다중막의 식각액 조성물 및 그 식각방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
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JPH0541512A (ja) * 1991-08-06 1993-02-19 Fuji Xerox Co Ltd イメージセンサの製造方法
JP2005163070A (ja) * 2003-11-28 2005-06-23 Sharp Corp エッチング液およびエッチング方法
KR101154244B1 (ko) * 2005-06-28 2012-06-18 주식회사 동진쎄미켐 알루미늄, 몰리브덴, 인듐-틴-옥사이드를 식각하기 위한 식각액
TW200702493A (en) * 2005-07-13 2007-01-16 Basf Ag Copper etchant and method of etching copper
CN101139713B (zh) * 2006-09-07 2010-06-09 台湾薄膜电晶体液晶显示器产业协会 蚀刻液以及使用此蚀刻液的图案化导电层的制造方法
JP2009093145A (ja) * 2007-09-20 2009-04-30 Mitsubishi Electric Corp 表示装置及び表示装置の製造方法
KR101805187B1 (ko) * 2009-10-30 2017-12-06 동우 화인켐 주식회사 식각액 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070017762A (ko) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법
KR20120019196A (ko) * 2010-08-25 2012-03-06 플란제 에스이 다중막의 식각액 조성물 및 그 식각방법

Also Published As

Publication number Publication date
TW201404938A (zh) 2014-02-01
TWI500819B (zh) 2015-09-21
JP2014027274A (ja) 2014-02-06
KR20140014506A (ko) 2014-02-06
CN103572292A (zh) 2014-02-12
CN103572292B (zh) 2016-12-28
JP5867930B2 (ja) 2016-02-24

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