KR101402205B1 - 비휘발성 메모리의 계층적 교차 어레이 - Google Patents

비휘발성 메모리의 계층적 교차 어레이 Download PDF

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KR101402205B1
KR101402205B1 KR1020127003807A KR20127003807A KR101402205B1 KR 101402205 B1 KR101402205 B1 KR 101402205B1 KR 1020127003807 A KR1020127003807 A KR 1020127003807A KR 20127003807 A KR20127003807 A KR 20127003807A KR 101402205 B1 KR101402205 B1 KR 101402205B1
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block
memory cells
selection
selection element
global
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KR20120026635A (ko
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철민 정
루 용
인식 진
영필 김
리우 해리
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시게이트 테크놀로지 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020127003807A 2009-07-13 2010-07-09 비휘발성 메모리의 계층적 교차 어레이 Expired - Fee Related KR101402205B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/502,199 US8098507B2 (en) 2009-07-13 2009-07-13 Hierarchical cross-point array of non-volatile memory
US12/502,199 2009-07-13
PCT/US2010/041552 WO2011008652A1 (en) 2009-07-13 2010-07-09 Hierarchical cross-point array of non-volatile memory

Publications (2)

Publication Number Publication Date
KR20120026635A KR20120026635A (ko) 2012-03-19
KR101402205B1 true KR101402205B1 (ko) 2014-05-30

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Country Status (5)

Country Link
US (1) US8098507B2 (enExample)
JP (1) JP5531099B2 (enExample)
KR (1) KR101402205B1 (enExample)
CN (1) CN102473456B (enExample)
WO (1) WO2011008652A1 (enExample)

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US8169811B2 (en) * 2010-07-13 2012-05-01 Nxp B.V. Non-volatile re-programmable memory device
JP5802625B2 (ja) * 2012-08-24 2015-10-28 株式会社東芝 不揮発性半導体記憶装置
KR101998673B1 (ko) 2012-10-12 2019-07-11 삼성전자주식회사 저항성 메모리 장치 및 그것의 구동방법
US8982647B2 (en) * 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
US10157669B2 (en) 2013-04-02 2018-12-18 Micron Technology, Inc. Method of storing and retrieving information for a resistive random access memory (RRAM) with multi-memory cells per bit
US10049730B2 (en) 2014-07-31 2018-08-14 Hewlett Packard Enterprise Development Lp Crossbar arrays with shared drivers
US10134470B2 (en) 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
CN107086202A (zh) * 2016-02-14 2017-08-22 复旦大学 一种可抑制三维水平交叉点式电阻转换存储器漏电流的集成结构
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
US11221974B2 (en) * 2020-02-12 2022-01-11 Alibaba Group Holding Limited Device and method for low latency memory access
CN111724847A (zh) * 2020-06-03 2020-09-29 厦门半导体工业技术研发有限公司 一种半导体集成电路器件及其使用方法

Citations (4)

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EP0104120A2 (en) 1982-09-20 1984-03-28 Fairchild Semiconductor Corporation Redundant columns for byte wide memories
JP2004186553A (ja) 2002-12-05 2004-07-02 Sharp Corp 不揮発性メモリセル及び不揮発性半導体記憶装置
JP2006302407A (ja) 2005-04-20 2006-11-02 Nippon Telegr & Teleph Corp <Ntt> メモリ装置
JP2009004725A (ja) 2007-09-25 2009-01-08 Panasonic Corp 抵抗変化型不揮発性記憶装置

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DE19813504A1 (de) * 1998-03-26 1999-09-30 Siemens Ag Schaltungsanordnung und Verfahren zur automatischen Erkennung und Beseitigung von Wortleitungs-Bitleitungs-Kurzschlüssen
DE10032274A1 (de) * 2000-07-03 2002-01-24 Infineon Technologies Ag Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP3737403B2 (ja) * 2000-09-19 2006-01-18 Ｎｅｃエレクトロニクス株式会社 メモリセルアレイ、不揮発性記憶ユニットおよび不揮発性半導体記憶装置
KR20030060327A (ko) * 2002-01-08 2003-07-16 삼성전자주식회사 고집적 자성체 메모리 소자 및 그 구동 방법
US6686624B2 (en) * 2002-03-11 2004-02-03 Monolithic System Technology, Inc. Vertical one-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region
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JP4177818B2 (ja) * 2004-01-29 2008-11-05 シャープ株式会社 半導体記憶装置
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Publication number Priority date Publication date Assignee Title
EP0104120A2 (en) 1982-09-20 1984-03-28 Fairchild Semiconductor Corporation Redundant columns for byte wide memories
JP2004186553A (ja) 2002-12-05 2004-07-02 Sharp Corp 不揮発性メモリセル及び不揮発性半導体記憶装置
JP2006302407A (ja) 2005-04-20 2006-11-02 Nippon Telegr & Teleph Corp <Ntt> メモリ装置
JP2009004725A (ja) 2007-09-25 2009-01-08 Panasonic Corp 抵抗変化型不揮発性記憶装置

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Publication number Publication date
US20110007548A1 (en) 2011-01-13
JP2012533143A (ja) 2012-12-20
WO2011008652A1 (en) 2011-01-20
JP5531099B2 (ja) 2014-06-25
CN102473456A (zh) 2012-05-23
KR20120026635A (ko) 2012-03-19
US8098507B2 (en) 2012-01-17
CN102473456B (zh) 2014-12-17

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