KR101391082B1 - 구속된 층의 제조 공정 및 이에 의해 제조된 소자 - Google Patents

구속된 층의 제조 공정 및 이에 의해 제조된 소자 Download PDF

Info

Publication number
KR101391082B1
KR101391082B1 KR1020087027338A KR20087027338A KR101391082B1 KR 101391082 B1 KR101391082 B1 KR 101391082B1 KR 1020087027338 A KR1020087027338 A KR 1020087027338A KR 20087027338 A KR20087027338 A KR 20087027338A KR 101391082 B1 KR101391082 B1 KR 101391082B1
Authority
KR
South Korea
Prior art keywords
layer
rsa
radiation
organic
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087027338A
Other languages
English (en)
Korean (ko)
Other versions
KR20090034804A (ko
Inventor
다니엘 디. 레클룩스
에릭 엠. 스미쓰
게리 에이. 조한슨
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20090034804A publication Critical patent/KR20090034804A/ko
Application granted granted Critical
Publication of KR101391082B1 publication Critical patent/KR101391082B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
KR1020087027338A 2006-04-10 2007-04-10 구속된 층의 제조 공정 및 이에 의해 제조된 소자 Expired - Fee Related KR101391082B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/401,151 2006-04-10
US11/401,151 US8124172B2 (en) 2006-03-02 2006-04-10 Process for making contained layers and devices made with same
PCT/US2007/008830 WO2007120654A2 (en) 2006-04-10 2007-04-10 Process for making contained layers and devices made with same

Publications (2)

Publication Number Publication Date
KR20090034804A KR20090034804A (ko) 2009-04-08
KR101391082B1 true KR101391082B1 (ko) 2014-04-30

Family

ID=38610130

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087027338A Expired - Fee Related KR101391082B1 (ko) 2006-04-10 2007-04-10 구속된 층의 제조 공정 및 이에 의해 제조된 소자

Country Status (6)

Country Link
US (3) US8124172B2 (enExample)
EP (1) EP2005498A4 (enExample)
JP (1) JP2009533251A (enExample)
KR (1) KR101391082B1 (enExample)
CN (1) CN101416327B (enExample)
WO (1) WO2007120654A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080286487A1 (en) * 2007-05-18 2008-11-20 Lang Charles D Process for making contained layers
JP2011501360A (ja) * 2007-10-15 2011-01-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 溶液処理された電子デバイス
JP2011501472A (ja) * 2007-10-23 2011-01-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 発光用途の3成分発光層
KR20100094475A (ko) * 2007-10-26 2010-08-26 이 아이 듀폰 디 네모아 앤드 캄파니 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자
US20090142556A1 (en) * 2007-11-29 2009-06-04 E. I. Du Pont De Nemours And Company Process for forming an organic electronic device including an organic device layer
US8040048B2 (en) * 2007-12-12 2011-10-18 Lang Charles D Process for forming an organic electronic device including an organic device layer
JP2011509498A (ja) 2007-12-14 2011-03-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 電子デバイス用のバックプレーン構造体
KR20100111315A (ko) * 2008-02-01 2010-10-14 이 아이 듀폰 디 네모아 앤드 캄파니 용액 처리된 전자 소자를 제조하기 위한 구조물
TW201005813A (en) * 2008-05-15 2010-02-01 Du Pont Process for forming an electroactive layer
KR20110014653A (ko) * 2008-05-19 2011-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 전자 소자에서 증기 코팅 장치 및 방법
US8759818B2 (en) 2009-02-27 2014-06-24 E I Du Pont De Nemours And Company Deuterated compounds for electronic applications
WO2010102272A2 (en) 2009-03-06 2010-09-10 E. I. Du Pont De Nemours And Company Process for forming an electroactive layer
WO2010104857A2 (en) 2009-03-09 2010-09-16 E. I. Du Pont De Nemours And Company Process for forming an electroactive layer
EP2406813A4 (en) 2009-03-09 2012-07-25 Du Pont METHOD FOR FORMING AN ELECTROACTIVE LAYER
US8497495B2 (en) * 2009-04-03 2013-07-30 E I Du Pont De Nemours And Company Electroactive materials
GB0912034D0 (en) * 2009-07-10 2009-08-19 Cambridge Entpr Ltd Patterning
TW201104357A (en) * 2009-07-27 2011-02-01 Du Pont Process and materials for making contained layers and devices made with same
TWI385185B (zh) * 2009-07-29 2013-02-11 Ind Tech Res Inst 聚合物及包含其之光學元件及光電裝置
GB0913456D0 (en) 2009-08-03 2009-09-16 Cambridge Entpr Ltd Printed electronic device
TW201111326A (en) 2009-09-29 2011-04-01 Du Pont Deuterated compounds for luminescent applications
WO2011059463A1 (en) 2009-10-29 2011-05-19 E. I. Du Pont De Nemours And Company Deuterated compounds for electronic applications
KR101547410B1 (ko) 2010-12-20 2015-08-25 이 아이 듀폰 디 네모아 앤드 캄파니 전자적 응용을 위한 조성물
US9444050B2 (en) 2013-01-17 2016-09-13 Kateeva, Inc. High resolution organic light-emitting diode devices, displays, and related method
US9614191B2 (en) 2013-01-17 2017-04-04 Kateeva, Inc. High resolution organic light-emitting diode devices, displays, and related methods
KR102472642B1 (ko) 2015-06-16 2022-11-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102431626B1 (ko) 2015-10-06 2022-08-11 삼성디스플레이 주식회사 발광 표시 장치 및 그 제조 방법
CN111081901A (zh) * 2018-11-26 2020-04-28 中国科学院苏州纳米技术与纳米仿生研究所 印刷电子器件的制备方法
EP4166580A4 (en) * 2020-06-10 2024-06-12 Daikin Industries, Ltd. FLUORINE-CONTAINING COMPOUND

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010022497A1 (en) * 2000-02-23 2001-09-20 Dai Nippon Printing Co., Electroluminescent device and process for producing the same

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416203A (en) * 1977-07-07 1979-02-06 Nippon Paint Co Ltd Dry making method of photosensitive resin plate
US5435887A (en) 1993-11-03 1995-07-25 Massachusetts Institute Of Technology Methods for the fabrication of microstructure arrays
DE19500912A1 (de) 1995-01-13 1996-07-18 Basf Ag Elektrolumineszierende Anordnung
JPH09203803A (ja) * 1996-01-25 1997-08-05 Asahi Glass Co Ltd カラーフィルタの製造方法及びそれを用いた液晶表示素子
US6495624B1 (en) 1997-02-03 2002-12-17 Cytonix Corporation Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same
JP4413035B2 (ja) * 1997-08-08 2010-02-10 大日本印刷株式会社 パターン形成体およびパターン形成方法
US6303238B1 (en) 1997-12-01 2001-10-16 The Trustees Of Princeton University OLEDs doped with phosphorescent compounds
US6736985B1 (en) * 1999-05-05 2004-05-18 Agere Systems Inc. High-resolution method for patterning a substrate with micro-printing
EP2306495B1 (en) 1999-05-13 2017-04-19 The Trustees of Princeton University Very high efficiency organic light emitting devices based on electrophosphorescence
JP3980801B2 (ja) * 1999-09-16 2007-09-26 株式会社東芝 三次元構造体およびその製造方法
AU1807201A (en) 1999-12-01 2001-06-12 Trustees Of Princeton University, The Complexes of form L2MX as phosphorescent dopants for organic leds
JP2001237069A (ja) * 2000-02-23 2001-08-31 Dainippon Printing Co Ltd El素子およびその製造方法
US7074640B2 (en) * 2000-06-06 2006-07-11 Simon Fraser University Method of making barrier layers
US6670645B2 (en) 2000-06-30 2003-12-30 E. I. Du Pont De Nemours And Company Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
JP4442533B2 (ja) * 2000-08-29 2010-03-31 ダイキン工業株式会社 含フッ素不飽和化合物
US6875523B2 (en) 2001-07-05 2005-04-05 E. I. Du Pont De Nemours And Company Photoactive lanthanide complexes with phosphine oxides, phosphine oxide-sulfides, pyridine N-oxides, and phosphine oxide-pyridine N-oxides, and devices made with such complexes
US6924047B2 (en) 2001-07-18 2005-08-02 E.I. Du Pont De Nemours And Company Luminescent lanthanide complexes with imine ligands and devices made with such complexes
US6656611B2 (en) 2001-07-20 2003-12-02 Osram Opto Semiconductors Gmbh Structure-defining material for OLEDs
EP1411088B1 (en) 2001-07-26 2013-08-21 Nissan Chemical Industries, Ltd. Polyamic acid resin composition
US7166368B2 (en) 2001-11-07 2007-01-23 E. I. Du Pont De Nemours And Company Electroluminescent platinum compounds and devices made with such compounds
JP4231645B2 (ja) 2001-12-12 2009-03-04 大日本印刷株式会社 パターン形成体の製造方法
JP4299144B2 (ja) 2001-12-26 2009-07-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フッ素化フェニルピリジン、フェニルピリミジン、およびフェニルキノリンを含むエレクトロルミネッセンスイリジウム化合物ならびにこのような化合物を用いて製造されるデバイス
US6955773B2 (en) 2002-02-28 2005-10-18 E.I. Du Pont De Nemours And Company Polymer buffer layers and their use in light-emitting diodes
GB0207134D0 (en) * 2002-03-27 2002-05-08 Cambridge Display Tech Ltd Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
JP4092261B2 (ja) 2002-08-02 2008-05-28 三星エスディアイ株式会社 基板の製造方法及び有機エレクトロルミネッセンス素子の製造方法
US6963005B2 (en) 2002-08-15 2005-11-08 E. I. Du Pont De Nemours And Company Compounds comprising phosphorus-containing metal complexes
US6780511B2 (en) * 2002-09-05 2004-08-24 Borden Chemical, Inc. N-substituted arylamino-phenol-formaldehyde condensates
US7098060B2 (en) 2002-09-06 2006-08-29 E.I. Du Pont De Nemours And Company Methods for producing full-color organic electroluminescent devices
CN1681869B (zh) 2002-09-24 2010-05-26 E.I.内穆尔杜邦公司 用于电子器件用聚合物酸胶体制成的可水分散的聚苯胺
WO2004029128A2 (en) 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
CN1711503B (zh) 2002-11-06 2010-05-26 旭硝子株式会社 负型感光性树脂组合物用于制造隔壁的用途
JP2004177793A (ja) * 2002-11-28 2004-06-24 Seiko Epson Corp 微細構造物の製造方法およびこの微細構造物の製造方法を用いて製造された自発光素子、光学素子、デバイス並びにこのデバイスを備えた電子機器
JP2004234901A (ja) * 2003-01-28 2004-08-19 Seiko Epson Corp ディスプレイ基板、有機el表示装置、ディスプレイ基板の製造方法および電子機器
JPWO2004070836A1 (ja) * 2003-02-06 2006-06-01 株式会社Neomaxマテリアル 気密封止用キャップおよびその製造方法
JP2004294878A (ja) * 2003-03-27 2004-10-21 Seiko Epson Corp 微細構造物の製造方法、デバイス、光学素子、集積回路及び電子機器
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7102155B2 (en) 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP4632193B2 (ja) * 2003-09-18 2011-02-16 大日本印刷株式会社 パターニング用基板の製造方法
JP4152852B2 (ja) * 2003-09-30 2008-09-17 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
JP4784723B2 (ja) * 2003-12-24 2011-10-05 Tdk株式会社 ハードコート剤組成物及びこれを用いた光情報媒体
US7067841B2 (en) 2004-04-22 2006-06-27 E. I. Du Pont De Nemours And Company Organic electronic devices
JP2006024535A (ja) * 2004-07-09 2006-01-26 Seiko Epson Corp 有機薄膜素子の製造方法、電気光学装置の製造方法及び電子機器の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010022497A1 (en) * 2000-02-23 2001-09-20 Dai Nippon Printing Co., Electroluminescent device and process for producing the same

Also Published As

Publication number Publication date
JP2009533251A (ja) 2009-09-17
EP2005498A4 (en) 2012-04-18
CN101416327B (zh) 2011-01-19
WO2007120654A3 (en) 2008-08-28
EP2005498A2 (en) 2008-12-24
CN101416327A (zh) 2009-04-22
US8383192B2 (en) 2013-02-26
US20110183268A1 (en) 2011-07-28
WO2007120654A2 (en) 2007-10-25
US20070218582A1 (en) 2007-09-20
US20070205409A1 (en) 2007-09-06
KR20090034804A (ko) 2009-04-08
US8124172B2 (en) 2012-02-28

Similar Documents

Publication Publication Date Title
KR101391082B1 (ko) 구속된 층의 제조 공정 및 이에 의해 제조된 소자
JP2009533251A5 (enExample)
US8592239B2 (en) Process and materials for making contained layers and devices made with same
WO2012087977A1 (en) Process and materials for making contained layers and devices made with same
JP5727368B2 (ja) 電子デバイスにおける気相コーティングの装置および方法
KR20100111315A (ko) 용액 처리된 전자 소자를 제조하기 위한 구조물
KR101516447B1 (ko) 격납된 층을 제조하는 방법
KR20100106309A (ko) 용액 처리된 전자 소자
US20080087882A1 (en) Process for making contained layers and devices made with same
WO2012109609A2 (en) Process and materials for making contained layers and devices made with same
JP2013048118A (ja) 閉じ込められた層を製造するための方法、及び同方法によって製造されたデバイス
US20090142556A1 (en) Process for forming an organic electronic device including an organic device layer
US20110260137A1 (en) Process for making contained layers and devices made with same

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170425

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170425

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000