JP2009533251A - 閉じ込められた層の製造方法、およびそれを使用して製造されたデバイス - Google Patents

閉じ込められた層の製造方法、およびそれを使用して製造されたデバイス Download PDF

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Publication number
JP2009533251A
JP2009533251A JP2009505432A JP2009505432A JP2009533251A JP 2009533251 A JP2009533251 A JP 2009533251A JP 2009505432 A JP2009505432 A JP 2009505432A JP 2009505432 A JP2009505432 A JP 2009505432A JP 2009533251 A JP2009533251 A JP 2009533251A
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JP
Japan
Prior art keywords
layer
rsa
radiation
organic active
active layer
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Pending
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JP2009505432A
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English (en)
Japanese (ja)
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JP2009533251A5 (enExample
Inventor
ディー．ルクルークス ダニエル
エム．スミス エリック
エー．ヨハンセン ゲーリー
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2009533251A publication Critical patent/JP2009533251A/ja
Publication of JP2009533251A5 publication Critical patent/JP2009533251A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
JP2009505432A 2006-04-10 2007-04-10 閉じ込められた層の製造方法、およびそれを使用して製造されたデバイス Pending JP2009533251A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/401,151 US8124172B2 (en) 2006-03-02 2006-04-10 Process for making contained layers and devices made with same
PCT/US2007/008830 WO2007120654A2 (en) 2006-04-10 2007-04-10 Process for making contained layers and devices made with same

Publications (2)

Publication Number Publication Date
JP2009533251A true JP2009533251A (ja) 2009-09-17
JP2009533251A5 JP2009533251A5 (enExample) 2015-03-12

Family

ID=38610130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009505432A Pending JP2009533251A (ja) 2006-04-10 2007-04-10 閉じ込められた層の製造方法、およびそれを使用して製造されたデバイス

Country Status (6)

Country Link
US (3) US8124172B2 (enExample)
EP (1) EP2005498A4 (enExample)
JP (1) JP2009533251A (enExample)
KR (1) KR101391082B1 (enExample)
CN (1) CN101416327B (enExample)
WO (1) WO2007120654A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080286487A1 (en) * 2007-05-18 2008-11-20 Lang Charles D Process for making contained layers
JP2011501360A (ja) * 2007-10-15 2011-01-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 溶液処理された電子デバイス
JP2011501472A (ja) * 2007-10-23 2011-01-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 発光用途の３成分発光層
KR20100094475A (ko) * 2007-10-26 2010-08-26 이 아이 듀폰 디 네모아 앤드 캄파니 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자
US20090142556A1 (en) * 2007-11-29 2009-06-04 E. I. Du Pont De Nemours And Company Process for forming an organic electronic device including an organic device layer
US8040048B2 (en) * 2007-12-12 2011-10-18 Lang Charles D Process for forming an organic electronic device including an organic device layer
JP2011509498A (ja) 2007-12-14 2011-03-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 電子デバイス用のバックプレーン構造体
KR20100111315A (ko) * 2008-02-01 2010-10-14 이 아이 듀폰 디 네모아 앤드 캄파니 용액 처리된 전자 소자를 제조하기 위한 구조물
TW201005813A (en) * 2008-05-15 2010-02-01 Du Pont Process for forming an electroactive layer
KR20110014653A (ko) * 2008-05-19 2011-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 전자 소자에서 증기 코팅 장치 및 방법
US8759818B2 (en) 2009-02-27 2014-06-24 E I Du Pont De Nemours And Company Deuterated compounds for electronic applications
WO2010102272A2 (en) 2009-03-06 2010-09-10 E. I. Du Pont De Nemours And Company Process for forming an electroactive layer
WO2010104857A2 (en) 2009-03-09 2010-09-16 E. I. Du Pont De Nemours And Company Process for forming an electroactive layer
EP2406813A4 (en) 2009-03-09 2012-07-25 Du Pont METHOD FOR FORMING AN ELECTROACTIVE LAYER
US8497495B2 (en) * 2009-04-03 2013-07-30 E I Du Pont De Nemours And Company Electroactive materials
GB0912034D0 (en) * 2009-07-10 2009-08-19 Cambridge Entpr Ltd Patterning
TW201104357A (en) * 2009-07-27 2011-02-01 Du Pont Process and materials for making contained layers and devices made with same
TWI385185B (zh) * 2009-07-29 2013-02-11 Ind Tech Res Inst 聚合物及包含其之光學元件及光電裝置
GB0913456D0 (en) 2009-08-03 2009-09-16 Cambridge Entpr Ltd Printed electronic device
TW201111326A (en) 2009-09-29 2011-04-01 Du Pont Deuterated compounds for luminescent applications
WO2011059463A1 (en) 2009-10-29 2011-05-19 E. I. Du Pont De Nemours And Company Deuterated compounds for electronic applications
KR101547410B1 (ko) 2010-12-20 2015-08-25 이 아이 듀폰 디 네모아 앤드 캄파니 전자적 응용을 위한 조성물
US9444050B2 (en) 2013-01-17 2016-09-13 Kateeva, Inc. High resolution organic light-emitting diode devices, displays, and related method
US9614191B2 (en) 2013-01-17 2017-04-04 Kateeva, Inc. High resolution organic light-emitting diode devices, displays, and related methods
KR102472642B1 (ko) 2015-06-16 2022-11-30 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102431626B1 (ko) 2015-10-06 2022-08-11 삼성디스플레이 주식회사 발광 표시 장치 및 그 제조 방법
CN111081901A (zh) * 2018-11-26 2020-04-28 中国科学院苏州纳米技术与纳米仿生研究所 印刷电子器件的制备方法
EP4166580A4 (en) * 2020-06-10 2024-06-12 Daikin Industries, Ltd. FLUORINE-CONTAINING COMPOUND

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416203A (en) * 1977-07-07 1979-02-06 Nippon Paint Co Ltd Dry making method of photosensitive resin plate
JPH09203803A (ja) * 1996-01-25 1997-08-05 Asahi Glass Co Ltd カラーフィルタの製造方法及びそれを用いた液晶表示素子
JP2001237069A (ja) * 2000-02-23 2001-08-31 Dainippon Printing Co Ltd Ｅｌ素子およびその製造方法
JP2004177793A (ja) * 2002-11-28 2004-06-24 Seiko Epson Corp 微細構造物の製造方法およびこの微細構造物の製造方法を用いて製造された自発光素子、光学素子、デバイス並びにこのデバイスを備えた電子機器
JP2004199086A (ja) * 1997-08-08 2004-07-15 Dainippon Printing Co Ltd パターン形成体およびパターン形成方法
JP2004234901A (ja) * 2003-01-28 2004-08-19 Seiko Epson Corp ディスプレイ基板、有機ｅｌ表示装置、ディスプレイ基板の製造方法および電子機器
JP2004294878A (ja) * 2003-03-27 2004-10-21 Seiko Epson Corp 微細構造物の製造方法、デバイス、光学素子、集積回路及び電子機器
JP2005093751A (ja) * 2003-09-18 2005-04-07 Dainippon Printing Co Ltd パターニング用基板の製造方法およびパターニング用基板
JP2005179613A (ja) * 2003-12-24 2005-07-07 Tdk Corp ハードコート剤組成物及びこれを用いた光情報媒体
JP2005522000A (ja) * 2002-03-27 2005-07-21 ケンブリッジ ディスプレイ テクノロジー リミテッド 有機光電子及び電子装置の製造方法並びにこれによって得られた装置
JP2005350484A (ja) * 2000-08-29 2005-12-22 Daikin Ind Ltd 含フッ素不飽和化合物

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5435887A (en) 1993-11-03 1995-07-25 Massachusetts Institute Of Technology Methods for the fabrication of microstructure arrays
DE19500912A1 (de) 1995-01-13 1996-07-18 Basf Ag Elektrolumineszierende Anordnung
US6495624B1 (en) 1997-02-03 2002-12-17 Cytonix Corporation Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same
US6303238B1 (en) 1997-12-01 2001-10-16 The Trustees Of Princeton University OLEDs doped with phosphorescent compounds
US6736985B1 (en) * 1999-05-05 2004-05-18 Agere Systems Inc. High-resolution method for patterning a substrate with micro-printing
EP2306495B1 (en) 1999-05-13 2017-04-19 The Trustees of Princeton University Very high efficiency organic light emitting devices based on electrophosphorescence
JP3980801B2 (ja) * 1999-09-16 2007-09-26 株式会社東芝 三次元構造体およびその製造方法
AU1807201A (en) 1999-12-01 2001-06-12 Trustees Of Princeton University, The Complexes of form L2MX as phosphorescent dopants for organic leds
KR20010085420A (ko) * 2000-02-23 2001-09-07 기타지마 요시토시 전계발광소자와 그 제조방법
US7074640B2 (en) * 2000-06-06 2006-07-11 Simon Fraser University Method of making barrier layers
US6670645B2 (en) 2000-06-30 2003-12-30 E. I. Du Pont De Nemours And Company Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
US6875523B2 (en) 2001-07-05 2005-04-05 E. I. Du Pont De Nemours And Company Photoactive lanthanide complexes with phosphine oxides, phosphine oxide-sulfides, pyridine N-oxides, and phosphine oxide-pyridine N-oxides, and devices made with such complexes
US6924047B2 (en) 2001-07-18 2005-08-02 E.I. Du Pont De Nemours And Company Luminescent lanthanide complexes with imine ligands and devices made with such complexes
US6656611B2 (en) 2001-07-20 2003-12-02 Osram Opto Semiconductors Gmbh Structure-defining material for OLEDs
EP1411088B1 (en) 2001-07-26 2013-08-21 Nissan Chemical Industries, Ltd. Polyamic acid resin composition
US7166368B2 (en) 2001-11-07 2007-01-23 E. I. Du Pont De Nemours And Company Electroluminescent platinum compounds and devices made with such compounds
JP4231645B2 (ja) 2001-12-12 2009-03-04 大日本印刷株式会社 パターン形成体の製造方法
JP4299144B2 (ja) 2001-12-26 2009-07-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フッ素化フェニルピリジン、フェニルピリミジン、およびフェニルキノリンを含むエレクトロルミネッセンスイリジウム化合物ならびにこのような化合物を用いて製造されるデバイス
US6955773B2 (en) 2002-02-28 2005-10-18 E.I. Du Pont De Nemours And Company Polymer buffer layers and their use in light-emitting diodes
JP4092261B2 (ja) 2002-08-02 2008-05-28 三星エスディアイ株式会社 基板の製造方法及び有機エレクトロルミネッセンス素子の製造方法
US6963005B2 (en) 2002-08-15 2005-11-08 E. I. Du Pont De Nemours And Company Compounds comprising phosphorus-containing metal complexes
US6780511B2 (en) * 2002-09-05 2004-08-24 Borden Chemical, Inc. N-substituted arylamino-phenol-formaldehyde condensates
US7098060B2 (en) 2002-09-06 2006-08-29 E.I. Du Pont De Nemours And Company Methods for producing full-color organic electroluminescent devices
CN1681869B (zh) 2002-09-24 2010-05-26 E.I.内穆尔杜邦公司 用于电子器件用聚合物酸胶体制成的可水分散的聚苯胺
WO2004029128A2 (en) 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
CN1711503B (zh) 2002-11-06 2010-05-26 旭硝子株式会社 负型感光性树脂组合物用于制造隔壁的用途
JPWO2004070836A1 (ja) * 2003-02-06 2006-06-01 株式会社Ｎｅｏｍａｘマテリアル 気密封止用キャップおよびその製造方法
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7102155B2 (en) 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP4152852B2 (ja) * 2003-09-30 2008-09-17 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
US7067841B2 (en) 2004-04-22 2006-06-27 E. I. Du Pont De Nemours And Company Organic electronic devices
JP2006024535A (ja) * 2004-07-09 2006-01-26 Seiko Epson Corp 有機薄膜素子の製造方法、電気光学装置の製造方法及び電子機器の製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416203A (en) * 1977-07-07 1979-02-06 Nippon Paint Co Ltd Dry making method of photosensitive resin plate
JPH09203803A (ja) * 1996-01-25 1997-08-05 Asahi Glass Co Ltd カラーフィルタの製造方法及びそれを用いた液晶表示素子
JP2004199086A (ja) * 1997-08-08 2004-07-15 Dainippon Printing Co Ltd パターン形成体およびパターン形成方法
JP2001237069A (ja) * 2000-02-23 2001-08-31 Dainippon Printing Co Ltd Ｅｌ素子およびその製造方法
JP2005350484A (ja) * 2000-08-29 2005-12-22 Daikin Ind Ltd 含フッ素不飽和化合物
JP2005522000A (ja) * 2002-03-27 2005-07-21 ケンブリッジ ディスプレイ テクノロジー リミテッド 有機光電子及び電子装置の製造方法並びにこれによって得られた装置
JP2004177793A (ja) * 2002-11-28 2004-06-24 Seiko Epson Corp 微細構造物の製造方法およびこの微細構造物の製造方法を用いて製造された自発光素子、光学素子、デバイス並びにこのデバイスを備えた電子機器
JP2004234901A (ja) * 2003-01-28 2004-08-19 Seiko Epson Corp ディスプレイ基板、有機ｅｌ表示装置、ディスプレイ基板の製造方法および電子機器
JP2004294878A (ja) * 2003-03-27 2004-10-21 Seiko Epson Corp 微細構造物の製造方法、デバイス、光学素子、集積回路及び電子機器
JP2005093751A (ja) * 2003-09-18 2005-04-07 Dainippon Printing Co Ltd パターニング用基板の製造方法およびパターニング用基板
JP2005179613A (ja) * 2003-12-24 2005-07-07 Tdk Corp ハードコート剤組成物及びこれを用いた光情報媒体

Also Published As

Publication number Publication date
EP2005498A4 (en) 2012-04-18
CN101416327B (zh) 2011-01-19
WO2007120654A3 (en) 2008-08-28
KR101391082B1 (ko) 2014-04-30
EP2005498A2 (en) 2008-12-24
CN101416327A (zh) 2009-04-22
US8383192B2 (en) 2013-02-26
US20110183268A1 (en) 2011-07-28
WO2007120654A2 (en) 2007-10-25
US20070218582A1 (en) 2007-09-20
US20070205409A1 (en) 2007-09-06
KR20090034804A (ko) 2009-04-08
US8124172B2 (en) 2012-02-28

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