KR101385901B1 - 레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체 - Google Patents

레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체 Download PDF

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KR101385901B1
KR101385901B1 KR1020110103538A KR20110103538A KR101385901B1 KR 101385901 B1 KR101385901 B1 KR 101385901B1 KR 1020110103538 A KR1020110103538 A KR 1020110103538A KR 20110103538 A KR20110103538 A KR 20110103538A KR 101385901 B1 KR101385901 B1 KR 101385901B1
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light intensity
intensity distribution
pattern
resist
calculating
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KR20120040658A (ko
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료 나까야마
고오이찌로오 쯔지따
고지 미까미
히로유끼 이시이
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/44—Arrangements for executing specific programs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Databases & Information Systems (AREA)
  • Computational Mathematics (AREA)
  • Algebra (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020110103538A 2010-10-19 2011-10-11 레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체 Active KR101385901B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-234914 2010-10-19
JP2010234914A JP5539148B2 (ja) 2010-10-19 2010-10-19 レジストパターンの算出方法及び算出プログラム

Publications (2)

Publication Number Publication Date
KR20120040658A KR20120040658A (ko) 2012-04-27
KR101385901B1 true KR101385901B1 (ko) 2014-04-15

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ID=45933904

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KR1020110103538A Active KR101385901B1 (ko) 2010-10-19 2011-10-11 레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체

Country Status (5)

Country Link
US (1) US9448495B2 (enExample)
JP (1) JP5539148B2 (enExample)
KR (1) KR101385901B1 (enExample)
CN (1) CN102455594B (enExample)
TW (1) TWI454939B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102687968B1 (ko) 2018-11-06 2024-07-25 삼성전자주식회사 반도체 소자의 제조 방법
CN114330127A (zh) * 2021-12-29 2022-04-12 深圳晶源信息技术有限公司 一种提高光刻胶模型精度的方法
CN117008428B (zh) * 2023-09-26 2024-01-26 全芯智造技术有限公司 光刻仿真方法、设备和介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264102A (ja) 2003-02-28 2004-09-24 Matsushita Electric Ind Co Ltd Ｓｅｍシュリンク量測定方法および測長ｓｅｍ装置
JP2006156864A (ja) 2004-12-01 2006-06-15 Sony Corp レジストパターン・ライン幅の算出方法、マスクパターン・ライン幅の補正方法、光近接効果補正方法、露光用マスクの作製方法、露光用マスクを作製するための電子線描画方法、露光方法、及び、半導体装置の製造方法
KR20080079623A (ko) * 2007-02-27 2008-09-01 캐논 가부시끼가이샤 레지스트 패턴 형상 예측 방법, 레지스트 패턴 형상을예측하는 프로그램을 기억한 컴퓨터 판독가능한 기록 매체및 레지스트 패턴 형상을 예측하는 컴퓨터

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JP3297791B2 (ja) * 1994-11-16 2002-07-02 ソニー株式会社 露光方法およびレジストパターン算出方法
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
JPH11204397A (ja) * 1998-01-08 1999-07-30 Mitsubishi Electric Corp パターン決定方法および露光装置に用いられるアパーチャ
JP3223965B2 (ja) * 1998-07-10 2001-10-29 日本電気株式会社 化学増幅型レジスト形状の計算方法及び記録媒体
JP2000077292A (ja) * 1998-08-27 2000-03-14 Toshiba Corp レジストパターンの形成方法
JP3686367B2 (ja) * 2001-11-15 2005-08-24 株式会社ルネサステクノロジ パターン形成方法および半導体装置の製造方法
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
JP4317186B2 (ja) * 2003-05-30 2009-08-19 富士通マイクロエレクトロニクス株式会社 ローカルフレア補正
US7494753B2 (en) * 2005-01-28 2009-02-24 Asml Masktools B.V. Method, program product and apparatus for improving calibration of resist models used in critical dimension calculation
JP4413825B2 (ja) * 2005-07-13 2010-02-10 株式会社東芝 潜像計算方法、マスクパターン作成方法および半導体装置の製造方法
JP2007108508A (ja) * 2005-10-14 2007-04-26 Toshiba Corp マスクパターンの作成方法、マスクの製造方法およびプログラム
JP5055141B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 評価方法、調整方法、露光装置、およびプログラム
JP5178257B2 (ja) * 2008-03-13 2013-04-10 キヤノン株式会社 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264102A (ja) 2003-02-28 2004-09-24 Matsushita Electric Ind Co Ltd Ｓｅｍシュリンク量測定方法および測長ｓｅｍ装置
JP2006156864A (ja) 2004-12-01 2006-06-15 Sony Corp レジストパターン・ライン幅の算出方法、マスクパターン・ライン幅の補正方法、光近接効果補正方法、露光用マスクの作製方法、露光用マスクを作製するための電子線描画方法、露光方法、及び、半導体装置の製造方法
KR20080079623A (ko) * 2007-02-27 2008-09-01 캐논 가부시끼가이샤 레지스트 패턴 형상 예측 방법, 레지스트 패턴 형상을예측하는 프로그램을 기억한 컴퓨터 판독가능한 기록 매체및 레지스트 패턴 형상을 예측하는 컴퓨터

Also Published As

Publication number Publication date
JP2012089673A (ja) 2012-05-10
US20120092639A1 (en) 2012-04-19
US9448495B2 (en) 2016-09-20
TW201217992A (en) 2012-05-01
CN102455594B (zh) 2013-10-30
KR20120040658A (ko) 2012-04-27
JP5539148B2 (ja) 2014-07-02
CN102455594A (zh) 2012-05-16
TWI454939B (zh) 2014-10-01

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