TWI454939B - 光阻圖案計算方法及計算程式儲存媒體 - Google Patents

光阻圖案計算方法及計算程式儲存媒體 Download PDF

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Publication number
TWI454939B
TWI454939B TW100136738A TW100136738A TWI454939B TW I454939 B TWI454939 B TW I454939B TW 100136738 A TW100136738 A TW 100136738A TW 100136738 A TW100136738 A TW 100136738A TW I454939 B TWI454939 B TW I454939B
Authority
TW
Taiwan
Prior art keywords
light intensity
intensity distribution
pattern
photoresist
representative
Prior art date
Application number
TW100136738A
Other languages
English (en)
Chinese (zh)
Other versions
TW201217992A (en
Inventor
Ryo Nakayama
Kouichirou Tsujita
Koji Mikami
Hiroyuki Ishii
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW201217992A publication Critical patent/TW201217992A/zh
Application granted granted Critical
Publication of TWI454939B publication Critical patent/TWI454939B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/44—Arrangements for executing specific programs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Databases & Information Systems (AREA)
  • Computational Mathematics (AREA)
  • Algebra (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW100136738A 2010-10-19 2011-10-11 光阻圖案計算方法及計算程式儲存媒體 TWI454939B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010234914A JP5539148B2 (ja) 2010-10-19 2010-10-19 レジストパターンの算出方法及び算出プログラム

Publications (2)

Publication Number Publication Date
TW201217992A TW201217992A (en) 2012-05-01
TWI454939B true TWI454939B (zh) 2014-10-01

Family

ID=45933904

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100136738A TWI454939B (zh) 2010-10-19 2011-10-11 光阻圖案計算方法及計算程式儲存媒體

Country Status (5)

Country Link
US (1) US9448495B2 (enExample)
JP (1) JP5539148B2 (enExample)
KR (1) KR101385901B1 (enExample)
CN (1) CN102455594B (enExample)
TW (1) TWI454939B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI847247B (zh) * 2021-12-29 2024-07-01 大陸商深圳晶源資訊技術有限公司 一種提高光刻膠模型精度的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102687968B1 (ko) 2018-11-06 2024-07-25 삼성전자주식회사 반도체 소자의 제조 방법
CN117008428B (zh) * 2023-09-26 2024-01-26 全芯智造技术有限公司 光刻仿真方法、设备和介质

Citations (4)

* Cited by examiner, † Cited by third party
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US6333203B1 (en) * 1998-08-27 2001-12-25 Kabushiki Kaisha Toshiba Method of forming a resist pattern
TWI233149B (en) * 2001-11-15 2005-05-21 Hitachi Ltd Pattern-forming method and manufacturing method of semiconductor device
US20090180093A1 (en) * 2008-01-10 2009-07-16 Canon Kabushiki Kaisha Evaluation method, control method, exposure apparatus, and memory medium
TW201017342A (en) * 2008-07-11 2010-05-01 Canon Kk Exposure method and memory medium storing computer program

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JP3297791B2 (ja) * 1994-11-16 2002-07-02 ソニー株式会社 露光方法およびレジストパターン算出方法
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
JPH11204397A (ja) * 1998-01-08 1999-07-30 Mitsubishi Electric Corp パターン決定方法および露光装置に用いられるアパーチャ
JP3223965B2 (ja) * 1998-07-10 2001-10-29 日本電気株式会社 化学増幅型レジスト形状の計算方法及び記録媒体
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
JP2004264102A (ja) 2003-02-28 2004-09-24 Matsushita Electric Ind Co Ltd Ｓｅｍシュリンク量測定方法および測長ｓｅｍ装置
JP4317186B2 (ja) * 2003-05-30 2009-08-19 富士通マイクロエレクトロニクス株式会社 ローカルフレア補正
JP2006156864A (ja) 2004-12-01 2006-06-15 Sony Corp レジストパターン・ライン幅の算出方法、マスクパターン・ライン幅の補正方法、光近接効果補正方法、露光用マスクの作製方法、露光用マスクを作製するための電子線描画方法、露光方法、及び、半導体装置の製造方法
US7494753B2 (en) * 2005-01-28 2009-02-24 Asml Masktools B.V. Method, program product and apparatus for improving calibration of resist models used in critical dimension calculation
JP4413825B2 (ja) * 2005-07-13 2010-02-10 株式会社東芝 潜像計算方法、マスクパターン作成方法および半導体装置の製造方法
JP2007108508A (ja) * 2005-10-14 2007-04-26 Toshiba Corp マスクパターンの作成方法、マスクの製造方法およびプログラム
JP4328811B2 (ja) * 2007-02-27 2009-09-09 キヤノン株式会社 レジストパターン形状予測方法、プログラム及びコンピュータ
JP5178257B2 (ja) * 2008-03-13 2013-04-10 キヤノン株式会社 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333203B1 (en) * 1998-08-27 2001-12-25 Kabushiki Kaisha Toshiba Method of forming a resist pattern
TWI233149B (en) * 2001-11-15 2005-05-21 Hitachi Ltd Pattern-forming method and manufacturing method of semiconductor device
US20090180093A1 (en) * 2008-01-10 2009-07-16 Canon Kabushiki Kaisha Evaluation method, control method, exposure apparatus, and memory medium
TW201017342A (en) * 2008-07-11 2010-05-01 Canon Kk Exposure method and memory medium storing computer program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI847247B (zh) * 2021-12-29 2024-07-01 大陸商深圳晶源資訊技術有限公司 一種提高光刻膠模型精度的方法

Also Published As

Publication number Publication date
JP2012089673A (ja) 2012-05-10
US20120092639A1 (en) 2012-04-19
US9448495B2 (en) 2016-09-20
KR101385901B1 (ko) 2014-04-15
TW201217992A (en) 2012-05-01
CN102455594B (zh) 2013-10-30
KR20120040658A (ko) 2012-04-27
JP5539148B2 (ja) 2014-07-02
CN102455594A (zh) 2012-05-16

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