KR101375006B1 - 포토마스크 및 그 제조 방법 - Google Patents

포토마스크 및 그 제조 방법 Download PDF

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Publication number
KR101375006B1
KR101375006B1 KR1020110028708A KR20110028708A KR101375006B1 KR 101375006 B1 KR101375006 B1 KR 101375006B1 KR 1020110028708 A KR1020110028708 A KR 1020110028708A KR 20110028708 A KR20110028708 A KR 20110028708A KR 101375006 B1 KR101375006 B1 KR 101375006B1
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South Korea
Prior art keywords
pattern
film
photomask
line
light
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Korean (ko)
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KR20110110005A (ko
Inventor
고이찌로 요시다
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
KR1020110028708A 2010-03-31 2011-03-30 포토마스크 및 그 제조 방법 Active KR101375006B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010080506A JP2011215197A (ja) 2010-03-31 2010-03-31 フォトマスク及びその製造方法
JPJP-P-2010-080506 2010-03-31

Publications (2)

Publication Number Publication Date
KR20110110005A KR20110110005A (ko) 2011-10-06
KR101375006B1 true KR101375006B1 (ko) 2014-04-16

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KR1020110028708A Active KR101375006B1 (ko) 2010-03-31 2011-03-30 포토마스크 및 그 제조 방법

Country Status (4)

Country Link
JP (1) JP2011215197A (https=)
KR (1) KR101375006B1 (https=)
CN (1) CN102207675A (https=)
TW (1) TW201202839A (https=)

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* Cited by examiner, † Cited by third party
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KR101624436B1 (ko) * 2011-12-21 2016-05-25 다이니폰 인사츠 가부시키가이샤 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
CN103969943A (zh) * 2013-01-25 2014-08-06 北京京东方光电科技有限公司 一种对基板进行标记的方法
JP5686216B1 (ja) * 2013-08-20 2015-03-18 大日本印刷株式会社 マスクブランクス、位相シフトマスク及びその製造方法
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6282847B2 (ja) * 2013-11-19 2018-02-21 Hoya株式会社 フォトマスク及び該フォトマスクを用いた基板の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
KR102096269B1 (ko) * 2016-03-31 2020-04-03 주식회사 엘지화학 포토 마스크 및 이를 이용한 컬러필터용 컬럼 스페이서의 제조방법
US20190025694A1 (en) * 2016-03-31 2019-01-24 Intel Corporation High resolution photomask or reticle and its method of fabrication
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6573591B2 (ja) * 2016-09-13 2019-09-11 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
CN108563098A (zh) * 2018-01-17 2018-09-21 京东方科技集团股份有限公司 一种掩膜版及其制备方法
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
KR102179729B1 (ko) 2018-03-27 2020-11-17 주식회사 엘지화학 블랙 격벽 패턴 필름 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08334885A (ja) * 1995-06-02 1996-12-17 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその製造方法
KR20060093061A (ko) * 2005-02-18 2006-08-23 호야 가부시키가이샤 그레이톤 마스크의 제조 방법 및 그레이톤 마스크
JP2008116517A (ja) 2006-11-01 2008-05-22 Sk Electronics:Kk 中間調フォトマスク及びその製造方法
KR20090009155A (ko) * 2007-07-19 2009-01-22 호야 가부시키가이샤 포토마스크 및 그 제조 방법과 패턴 전사 방법

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KR0170686B1 (ko) * 1995-09-13 1999-03-20 김광호 하프톤 위상반전마스크의 제조방법
JP3630929B2 (ja) * 1997-07-18 2005-03-23 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクの製造方法
JP3037941B2 (ja) * 1997-12-19 2000-05-08 ホーヤ株式会社 ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
US6037083A (en) * 1998-12-22 2000-03-14 Hoya Corporation Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
JP4695964B2 (ja) * 2005-11-09 2011-06-08 アルバック成膜株式会社 グレートーンマスク及びその製造方法
KR20070083191A (ko) * 2006-02-20 2007-08-23 호야 가부시키가이샤 포토마스크의 결함 검사방법 및 포토마스크
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
TWI431408B (zh) * 2007-07-23 2014-03-21 Hoya Corp 光罩資訊之取得方法、光罩之品質顯示方法、顯示裝置之製造方法以及光罩製品
JP5254581B2 (ja) * 2007-08-22 2013-08-07 Ｈｏｙａ株式会社 フォトマスク及びフォトマスクの製造方法
JP5163016B2 (ja) * 2007-08-30 2013-03-13 凸版印刷株式会社 カラーフィルタの製造方法とフォトマスク
JP2009063638A (ja) * 2007-09-04 2009-03-26 Fujitsu Microelectronics Ltd フォトマスクの製造方法及び半導体装置の製造方法
JP4934236B2 (ja) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 グレートーンマスクブランク、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP4526573B2 (ja) * 2008-03-19 2010-08-18 日高精機株式会社 テンション付与装置及び熱交換器用フィンの製造装置
JP2009237419A (ja) * 2008-03-28 2009-10-15 Hoya Corp 多階調フォトマスク及びその製造方法、並びにパターン転写方法
JP5323526B2 (ja) * 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 位相シフトマスクブランク及び位相シフトマスクの製造方法
JP4849276B2 (ja) * 2008-08-15 2012-01-11 信越化学工業株式会社 グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法
JP5141504B2 (ja) * 2008-11-14 2013-02-13 大日本印刷株式会社 フォトマスクブランクスおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08334885A (ja) * 1995-06-02 1996-12-17 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその製造方法
KR20060093061A (ko) * 2005-02-18 2006-08-23 호야 가부시키가이샤 그레이톤 마스크의 제조 방법 및 그레이톤 마스크
JP2008116517A (ja) 2006-11-01 2008-05-22 Sk Electronics:Kk 中間調フォトマスク及びその製造方法
KR20090009155A (ko) * 2007-07-19 2009-01-22 호야 가부시키가이샤 포토마스크 및 그 제조 방법과 패턴 전사 방법

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TW201202839A (en) 2012-01-16
JP2011215197A (ja) 2011-10-27
KR20110110005A (ko) 2011-10-06
CN102207675A (zh) 2011-10-05

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