KR101374923B1 - 포토마스크 및 그 제조 방법, 패턴 전사 방법, 및 페리클 - Google Patents

포토마스크 및 그 제조 방법, 패턴 전사 방법, 및 페리클 Download PDF

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Publication number
KR101374923B1
KR101374923B1 KR1020120021725A KR20120021725A KR101374923B1 KR 101374923 B1 KR101374923 B1 KR 101374923B1 KR 1020120021725 A KR1020120021725 A KR 1020120021725A KR 20120021725 A KR20120021725 A KR 20120021725A KR 101374923 B1 KR101374923 B1 KR 101374923B1
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KR
South Korea
Prior art keywords
wavelength
photomask
line
light
pattern
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KR1020120021725A
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English (en)
Korean (ko)
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KR20120100797A (ko
Inventor
노보루 야마구찌
유따까 요시까와
히로유끼 스가와라
Original Assignee
호야 가부시키가이샤
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Publication of KR20120100797A publication Critical patent/KR20120100797A/ko
Application granted granted Critical
Publication of KR101374923B1 publication Critical patent/KR101374923B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020120021725A 2011-03-03 2012-03-02 포토마스크 및 그 제조 방법, 패턴 전사 방법, 및 페리클 KR101374923B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011046017 2011-03-03
JPJP-P-2011-046017 2011-03-03

Publications (2)

Publication Number Publication Date
KR20120100797A KR20120100797A (ko) 2012-09-12
KR101374923B1 true KR101374923B1 (ko) 2014-03-14

Family

ID=47086452

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Application Number Title Priority Date Filing Date
KR1020120021725A KR101374923B1 (ko) 2011-03-03 2012-03-02 포토마스크 및 그 제조 방법, 패턴 전사 방법, 및 페리클

Country Status (3)

Country Link
JP (1) JP5767140B2 (ja)
KR (1) KR101374923B1 (ja)
TW (1) TWI461839B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102286886B1 (ko) * 2014-11-18 2021-08-09 삼성디스플레이 주식회사 포토 마스크 및 이의 제조 방법
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
KR20200103223A (ko) * 2019-02-22 2020-09-02 삼성디스플레이 주식회사 리소그래피용 펠리클 막

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283322A (ja) * 1992-04-03 1993-10-29 Toshiba Corp Ｘ線露光用マスク
KR950001889A (ko) * 1993-06-22 1995-01-04 김주용 광 선택 필터가 부착된 포토마스크
KR20010075777A (ko) * 2000-01-18 2001-08-11 윤종용 하프톤 위상반전 마스크 및 그 제조방법
KR20110016697A (ko) * 2009-08-12 2011-02-18 엘지이노텍 주식회사 펠리 클 막

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121054A (ja) * 1986-11-10 1988-05-25 Nec Corp フオトマスク
JPH0193744A (ja) * 1987-10-06 1989-04-12 Fujitsu Ltd フォトマスク
JPH07297110A (ja) * 1994-04-27 1995-11-10 Nikon Corp 投影露光装置
JPH10284376A (ja) * 1997-04-07 1998-10-23 Nikon Corp 光源装置及び該装置を備えた露光装置
JP2000321753A (ja) * 1999-05-07 2000-11-24 Nikon Corp フォトマスク、露光装置、及びマイクロデバイス
US6280885B1 (en) * 1999-08-11 2001-08-28 Dupont Photomasks, Inc. Dust cover comprising anti-reflective coating
JP4413414B2 (ja) * 2000-11-09 2010-02-10 シャープ株式会社 露光用マスク、露光装置、露光方法及び液晶表示装置の製造方法
US7456384B2 (en) * 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
WO2007094197A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 保護装置、マスク及び露光装置
JP2007250959A (ja) * 2006-03-17 2007-09-27 Ushio Inc 近接場光露光装置および近接場光露光用フォトマスク

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283322A (ja) * 1992-04-03 1993-10-29 Toshiba Corp Ｘ線露光用マスク
KR950001889A (ko) * 1993-06-22 1995-01-04 김주용 광 선택 필터가 부착된 포토마스크
KR20010075777A (ko) * 2000-01-18 2001-08-11 윤종용 하프톤 위상반전 마스크 및 그 제조방법
KR20110016697A (ko) * 2009-08-12 2011-02-18 엘지이노텍 주식회사 펠리 클 막

Also Published As

Publication number Publication date
KR20120100797A (ko) 2012-09-12
JP5767140B2 (ja) 2015-08-19
TW201241550A (en) 2012-10-16
JP2012194554A (ja) 2012-10-11
TWI461839B (zh) 2014-11-21

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