201241550 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種光罩、圖案轉印方法、及護膜 (pellicle)。本發明尤其是關於一種可有利地用於製造以液 晶顯示面板為代表之顯示裝置的光罩。 【先前技術】 在用於製造液晶顯示面板等之曝光裝置中，作為曝光用 光源，通常使用超高壓水銀燈❶該超高壓水銀燈係具有包 含i線（365 nm)、h線（405 nm)、及匕線（436 nm)之複數個峰 值波長之光源。使用該光源，將光罩上所形成之轉印圖案 轉印至被轉印體上之綠膜，進而將所形成之光阻圖案用 作蝕刻遮罩，對於預先成膜於被轉印體上之薄膜等進行加 工。使用該等-連串之光微影流程，製造液晶顯示面板。 於曰本專利第4413414號公報（專利文獻丨）中記載有曝光 用光罩。其中記載有如下之曝光用光罩，其係於使自光源 放射之具有第1、第2及第3波長之光之混合波長的光中之 該第1波長之光藉由濾光器吸收後，對來自該濾光器之透 過光吸收上述第2波長之光，並使上述第3波長之光透過且 照射至光阻劑從而進行曝光，且該曝光用光罩之整個面上 形成有吸收上述第2波長之光之薄膜或基板。 【發明内容】 發明所欲解決之問題 近年來，顯示裝置之高解像度化得到推進，且伴隨形成 於液晶顯示面板之像素之高密度化的像素尺寸之微細化亦 162I68.doc 201241550 得到推進。即，伴隨顯示畫質之高品質化，於用以進行液 曰曰之開關或定向等動作之元件的形成過程中，亦產生微細 化之必要性。於使用投影方式之曝光裝置來對光罩上所形 成之轉印用圖案進行轉印時，亦逐漸產生實現解像度更高 之圖案轉印之必要性。尤其是，於進行等倍曝光之曝光裝 置中，與進行縮小曝光之曝光裝置相比，難以縮小最小解 像線寬’故期待最小解像極限之改善。 另卜對於使用光學系統時之圖案解像度（可解像之最 小線寬）與曝光波長之關係，，可將表示瑞利（Rayleigh)之解 像極限的以下之式子作為參考進行考慮。201241550 VI. Description of the Invention: [Technical Field] The present invention relates to a photomask, a pattern transfer method, and a pellicle. More particularly, the present invention relates to a reticle that can be advantageously used to fabricate a display device such as a liquid crystal display panel. [Prior Art] In an exposure apparatus for manufacturing a liquid crystal display panel or the like, as an exposure light source, an ultrahigh pressure mercury lamp is generally used, and the ultrahigh pressure mercury lamp system includes an i line (365 nm), an h line (405 nm), and A plurality of peak wavelength sources of light (436 nm). Using the light source, the transfer pattern formed on the photomask is transferred to the green film on the transfer target, and the formed photoresist pattern is used as an etching mask for filming on the transfer target in advance. The film or the like is processed. A liquid crystal display panel is manufactured using these-series light lithography processes. An exposure mask is described in Japanese Patent No. 4413414 (Patent Document No.). There is described an exposure mask which is obtained by absorbing light of the first wavelength of light having a mixed wavelength of light having first, second, and third wavelengths emitted from a light source by a filter. And absorbing the light of the second wavelength from the transmitted light from the filter, transmitting the light of the third wavelength, irradiating the photoresist, and exposing the light, and forming an absorption on the entire surface of the exposure mask The film or substrate of the second wavelength light. [Problems to be Solved by the Invention] In recent years, the high resolution of the display device has been advanced, and the miniaturization of the pixel size of the pixels formed on the liquid crystal display panel has been advanced. 162I68.doc 201241550 has been advanced. In other words, in order to improve the quality of the display image quality, it is necessary to reduce the size of the element for performing the operation of switching or orienting the liquid. When the transfer pattern formed on the photomask is transferred by using the projection type exposure apparatus, the necessity of realizing pattern transfer with higher resolution is also gradually produced. In particular, in an exposure apparatus that performs double exposure, it is difficult to reduce the minimum resolution line width as compared with an exposure apparatus that performs reduction exposure, and thus an improvement in the minimum resolution limit is expected. Further, regarding the relationship between the pattern resolution (the minimum line width at which the image can be resolved) and the exposure wavelength when the optical system is used, the following expression representing the resolution limit of Rayleigh can be considered as a reference.
F=k^/NA 此處，F ·最小線寬，ki :(係數，所謂之k 1因數），入： 曝光用光波長’ ΝΑ :相對於被轉印體之光學系統開口 率 〇 根據上式可明確’若縮短曝光用光之波長，則可縮小可 解像之最小線寬。 於利用如上述超高麼水銀燈之包含複數個峰值波長之 (以下，亦稱為多波長)曝光用光源進行圖案轉印時，有時 會因曝光裝置之光學系統具有之色差等原因而導致解像度 之劣化。 因為此種原因，故於為了曝光用光之單一波長化或者短 波長化，而例如於曝光裝置中設有可選擇性地切換所期望 之曝光用光波長的機構之情形時，藉由選擇曝光用光並切 換成所期望之波長之光而進行曝光，可提高轉印圓案之解 162l68.doc 201241550 像度。 然而’根據裝置之情況，當因光學設 附加該等功能之情形時、或是即便設計上可 時’亦存在如下等問題：伴隨功能附加而進行之改造需要 成本；或於改造期間内，裝置必需長時間停止。通常，液 晶面板用大型基板之製造步驟中使用之曝光裝置的尺寸非 常大’從而對液晶面板製造商〇iquid咖丨 manufacturer)而t ’如上所述之裝置之改造或條件變更成 為較大的負擔’故期待無需極力對曝光裝置進行變更便可 提咼欲微細化之圖案之解像度。 另方面，於在光罩中設有如上述專利文獻丨所揭示之 濾光器之情形時’存在如下之問題。 田曝光用光照射至濾光器時，存在如下問題：藉由所吸 收之光而產生熱，從而光罩溫度上升，因此，光罩之熱膨 脹對圖案轉印時之尺寸精度造成影響。 本發明中提供解決以上問題之方法，其目的在於提供— 種於使用先前之多波長之曝光用光源之情形時亦可提高轉 印圖案之解像度的光罩及其製造方法、圖案轉印方法及護 膜》 解決問題之技術手段 為了解決上述課題’本發明具有以下之構成。 (構成1) 一種光罩，其特徵在於：其係用以照射具有包含複數個 蜂值波長之波長區域之曝光用光而進行圖案轉印者，且 162168.doc 201241550 上述光罩具有透明基板、形成於上述透明基板上之轉印 圖案、及波長選擇機構， 上述波長選擇機構藉由將照射至上述光罩之曝光用光中 所包含之特定波長反射，而降低上述特定波長之光透過 量。 (構成2) 如構成1之光罩，其特徵在於：上述波長選擇機構係由 積層有具有彼此不同之折射率之複數個介電層的介電多層 膜構成。 (構成3) 如構成1或2之光罩，其特徵在於：上述特定波長包含g 線或h線。 (構成4) ‘ 如構成3之光罩，其特徵在於：上述波長選擇機構中，i 線之透過率為60%以上。 (構成5) 如構成3或4之光罩，其特徵在於：上述波長選擇機構 中，h線及g線之反射率分別為7〇%以上。 (構成6) 如構成1至5中之任-構成之光罩，其特徵在於：上述波 長選擇機構中，相對於 nm〜65()⑽之範圍内之任一波 長下之透過率均為70%以上。 (構成7) 如構成！至6中之任-構成之光罩，其特徵在於：上述波 162168.doc 201241550 長選擇機構係形成於上述透明基板之與形成有上述轉印圖 案之面為相反側之面。 (構成8) 如構成1之光罩，其特徵在於：上述光罩具有裝設於形 成有上述轉印圖案之側之光罩正面上的護膜，上述波長選 擇機構係設置於上述護膜上。 (構成9) 如構成9之光罩，其特徵在於：上述轉印圖案至少具有 透光部及相位調整部，於上述丨線、上述、線、及上述§線 中之任一種光中，透過上述透光部之光的相位、與透過上 述相位調整部之光的相位之差均為18〇度±1〇度。 (構成10) 如構成9之光罩，其特徵在於：上述轉印圖案具有遮光 部、透光部、及相位調整部，上述相位調整部係將上述透 明基板刻蝕至特定深度而形成者。 (構成11) -種圖案轉印方法’其特徵在於：其使用採用包含複數 個峰值波長之曝光用光之曝光裝置、及如構成no中之 任一構成之光罩，而向被轉印體上進行圖案轉印。 (構成12) 一種護膜，其特徵在於：其係裝設於光罩上者，該光罩 具有用以照射具有包含複數個峰值波^之波長區域之曝光 用光而進行圖案轉印的轉印圖案，且該護膜包括： 護膜框架（pellicle frame); 162168.doc -8 - 201241550 護膜用膜，其貼合於上述護膜框架上；及 波長選擇機構；且 上述波長選擇機構係藉由將照射至上述光罩之曝光用光 中所包含之特定波長反射而降低上述特定波長之光透過量 者。 (構成13) 如構成12之護膜，其特徵在於：上述波長選擇機構係由 形成於上述護膜賴上且積層冑具有彼此不肖之折射率之 複數個介電層的介電多層膜構成。 (構成14) 如構成12或13之護膜，其特徵在於：上述特定波長包含 g線或h線。 (構成15) 如構成12至14 t之任-構成之護膜，其特徵在於：上述 波長選擇機構中，上述i線之透過率為6〇%以上。 (構成16) 如構成12至15中之任-構成之護膜，其特徵在於：上述 波長選擇機構中，g線及h線之反射率為7〇%以上。 (構成17) 如構成12至16中之任一構成之護膜，其令上述波長選擇 機構中’遍⑽〜㈣⑽範圍内之任一波長下之透過率均 為70%以上。 (構成18) 如構成12至1 7中之任一構忐夕嗜时 稱成之遵膜，其特徵在於··上述 J62I68.doc 201241550 護膜用膜包含石英玻璃。 (構成19) -種圖案轉印方法’其特徵在於：其藉由使用裝設有如 構成12至18中之任-構成之護膜之光罩、且使用包含複數 個峰值波長之曝光用光之曝光裝置，而將光阻圖案轉印至 被轉印體上之光阻膜。 發明之效果 ,本發明之光翠具有將照射至形成有轉印圖案之區域之曝 光用光中之特定波長反射的波長選擇機構，藉此，可降低 上述特定波長之光透過量，從而，無需對大型曝光裝置進 行改造，便能夠以高於先前之解像度來對光罩上之轉印圖 案進行轉印。即，-方面可使用先前之曝光用光源或曝光 裝置，一方面能使每個光罩中具有不同之波長選擇功能。 【實施方式】 以下’對用以實施本發明之形態進行詳述。 如上述構成1所述，本發明之光罩係用以使用具有包含 複數個峰值波長之波長區域之曝光用《而進行圖案轉印的 光罩且上述光罩具有透明基板、形成於上述透明基板上 之轉印圖案、及波長選擇機構。 P本發明之光罩係為了如下情形而使用之光罩：藉由 曝光裝置，將包含複數個峰值波長之光照射至光罩，藉由 該光罩所具有之轉印圖案之透過光，對被轉印體進行曝 光。本發明之光罩所具有之上述波長選擇機構係藉由將照 射至上述光罩之曝光用光中所包含之特定波長反射，而降 162168.doc 201241550 低上述特定波長之光透過強度，結果降低光透過量。即， 该波長選擇機構降低特定波長之透過量，且該降低主要係 藉由光之反射而實現。 所峰值波長係指光強度表現為峰值之波長。 又’此處之所謂特定波長係指，於使用曝光裝置對光罩 之轉印圖案進行轉印時欲降低對該圖案轉印有助之程度的 波長’且亦可稱為透過降低對象之波長。 本發明之波長選擇機構可為如下之光學濾光器：藉由相 對於上述曝光用光之波長區域中之特定波長，選擇性地具 有較高之反射率，可使其他波長區域之光透過量相對地高 於上述特定波長。進而，本發明之波長選擇機構主要係藉 由反射而降低該特定波長之光之透過量。此處，所謂「主 要藉由反射」係指，因光之反射引起之透過量之降低程度 大於因光之吸收引起之透過量之降低程度。 例如，特定波長可包含h線、g線。藉此，選擇性地使其 他波長區域（以下，亦稱為選擇波長區域）之光透過強度相 對地南於上述特定波長之透過強度。選擇波長區域較佳為 匕3 i線例如可设為波長為365± 10 nm之範圍。本發明之 波長選擇機構於使用包含i線、h線、g線之曝光用光時， 在選擇波長區域（較佳為，包含i線而不包含h線、g線之波 長區域）内了表現出向於特定波長（例如，h線或g線）之透 過率。較佳為，本發明之波長選擇機構係如下者：使用之 曝光裝置之曝光用光t所包含的g線(436 nm)、h線(405 nm)、1線（365 nm)中’ i線之反射率低於h線、g線中之任一 162168.doc 201241550 者，i線之透過率高於h線、g線中之任一者。 較佳為’本發明所提及之波長選擇機構於曝光用光波長 區域中之選擇波長區域内’透過率（透過強度相對於入射 強度之比例）為60°/。以上。例如’於該波長區域内所包含之 選擇波長（例如i線）下’透過率可為6〇%以上。更佳為7〇0/〇 以上。 又，曝光用光波長區域内之上述特定波長（例如h線、g 線）下之透過率較佳為40%以下。進而較佳為2〇%以下。 進而，本發明之波長選擇機構中，上述曝光用光波長區 域内之特定波長下的透過率之降低主要係藉由光之反射而 實現。例如，該波長區域内之反射率可為7〇%以上。 又，作為選擇波長區域内所包含之選擇波長，選擇i 線，且上述特定波長下之反射率（例如，h線、g線之反射 率）可為70%以上。 再者，以下對如下情形進行說明：波長選擇機構相對於 曝光用光’具有透敎成分、或被吸收之成分來作為反射 以外之成分。 此處，於將照射至波長選擇機構之曝光用光之量言; 賴時’將藉由波長選擇機構而反射之量以百分率名 而作為反射率(R%) ’將藉由波長選擇機構而吸收之量》F=k^/NA Here, F ·minimum line width, ki : (coefficient, the so-called k 1 factor), into: exposure light wavelength ' ΝΑ : relative to the optical system aperture ratio of the transfer body 〇 according to It can be clarified that if the wavelength of the exposure light is shortened, the minimum line width of the solvable image can be reduced. When pattern transfer is performed using a plurality of peak wavelengths (hereinafter, also referred to as multi-wavelength) exposure light sources of the above-described ultra-high mercury lamp, the resolution may be caused by chromatic aberration of the optical system of the exposure apparatus or the like. Deterioration. For this reason, in order to achieve a single wavelength or short wavelength of exposure light, for example, when a mechanism for selectively switching the desired wavelength of exposure light is provided in the exposure apparatus, by selecting an exposure Exposure with light and switching to the desired wavelength of light can improve the resolution of the transfer case 162l68.doc 201241550. However, depending on the condition of the device, when the optical device is attached with such a function, or even if it is designed, there are problems such as the cost of the modification accompanying the function addition; or during the modification period, the device It must be stopped for a long time. In general, the size of the exposure apparatus used in the manufacturing process of the large substrate for the liquid crystal panel is very large, and thus the liquid crystal panel manufacturer 〇iquid curry manufacturer, and the modification or condition change of the apparatus as described above becomes a large burden. 'Therefore, it is expected that the resolution of the pattern to be refined can be improved without making any changes to the exposure apparatus. On the other hand, in the case where the optical filter as disclosed in the above-mentioned patent document is provided in the photomask, the following problems exist. When the field exposure is irradiated with light to the filter, there is a problem that heat is generated by the absorbed light, and the temperature of the mask rises. Therefore, the thermal expansion of the mask affects the dimensional accuracy at the time of pattern transfer. The present invention provides a method for solving the above problems, and an object thereof is to provide a photomask which can improve the resolution of a transfer pattern when a light source for exposure of a plurality of wavelengths is used, a method for manufacturing the same, a pattern transfer method, and Protective film>> Technical means for solving the problem In order to solve the above problems, the present invention has the following constitution. (Configuration 1) A reticle for illuminating a pattern transfer with exposure light having a wavelength region including a plurality of bee wavelengths, and 162168.doc 201241550 The reticle has a transparent substrate, a transfer pattern formed on the transparent substrate and a wavelength selection mechanism that reflects a specific wavelength of light contained in the exposure light irradiated to the photomask to reduce a light transmission amount of the specific wavelength. (Configuration 2) The photomask according to the first aspect, wherein the wavelength selection mechanism is composed of a dielectric multilayer film in which a plurality of dielectric layers having different refractive indices are laminated. (Configuration 3) The photomask according to Embodiment 1 or 2, wherein the specific wavelength includes a g line or an h line. (Configuration 4) The photomask according to the third aspect is characterized in that the transmittance of the i-line is 60% or more in the wavelength selection mechanism. (Configuration 5) The photomask according to the third or fourth aspect, wherein the reflectance of the h line and the g line in the wavelength selecting means is 7 % or more. (Configuration 6) The photomask according to any one of the configurations 1 to 5, wherein the wavelength selection means has a transmittance of 70 at any wavelength in the range of nm to 65 () (10). %the above. (Structure 7) If constituted! The refurbishment of the refractory member is characterized in that the wave 162168.doc 201241550 long selection mechanism is formed on a surface of the transparent substrate opposite to the surface on which the transfer pattern is formed. (Configuration 8) The photomask according to the first aspect, wherein the photomask has a protective film mounted on a front surface of the photomask on a side on which the transfer pattern is formed, and the wavelength selection mechanism is provided on the protective film . (Configuration 9) The photomask according to the configuration 9, wherein the transfer pattern has at least a light transmitting portion and a phase adjusting portion, and is transmitted through any one of the ridge line, the line, and the § line The difference between the phase of the light in the light transmitting portion and the phase of the light transmitted through the phase adjusting portion is 18 ± ± 1 〇. (Structure 10) The photomask of the ninth aspect, wherein the transfer pattern has a light shielding portion, a light transmitting portion, and a phase adjustment portion, and the phase adjustment portion is formed by etching the transparent substrate to a specific depth. (Structure 11) - A pattern transfer method" is characterized in that an exposure apparatus using exposure light including a plurality of peak wavelengths and a photomask configured as any of no are used for the transfer target Perform pattern transfer on. (Configuration 12) A protective film which is mounted on a photomask having a pattern for performing pattern transfer by irradiating exposure light having a wavelength region including a plurality of peak waves. Printing a pattern, and the protective film comprises: a pellicle frame; 162168.doc -8 - 201241550 a film for a film attached to the film frame; and a wavelength selection mechanism; and the wavelength selection mechanism The light transmission amount of the specific wavelength is lowered by reflecting a specific wavelength included in the exposure light irradiated to the photomask. (Structure 13) The protective film of the structure 12 is characterized in that the wavelength selecting means is composed of a dielectric multilayer film formed on the protective film and having a plurality of dielectric layers having a refractive index which is different from each other. (Structure 14) A film comprising the film of 12 or 13, characterized in that the specific wavelength includes a g line or an h line. (Structure 15) The protective film of any one of 12 to 14 t is characterized in that the transmittance of the i-line in the wavelength selecting means is 6% or more. (Structure 16) The protective film of any one of 12 to 15 is characterized in that the reflectance of the g-line and the h-line in the wavelength selecting means is 7% or more. (Structure 17) The protective film of any one of 12 to 16 which has a transmittance at any wavelength within the range of (10) to (4) (10) in the wavelength selecting means of 70% or more. (Structure 18) The film for film protection is composed of quartz glass, as described in the above-mentioned J62I68.doc 201241550. (Configuration 19) - A pattern transfer method" is characterized in that it uses a photomask provided with a protective film composed of any of the structures 12 to 18, and uses exposure light including a plurality of peak wavelengths. The exposure device transfers the photoresist pattern to the photoresist film on the transfer target. According to the invention, the light source of the present invention has a wavelength selection mechanism for reflecting a specific wavelength of the exposure light irradiated to the region where the transfer pattern is formed, whereby the light transmission amount of the specific wavelength can be reduced, thereby eliminating the need for By modifying the large exposure apparatus, the transfer pattern on the reticle can be transferred at a higher resolution than the previous one. That is, the prior exposure light source or exposure device can be used, on the one hand, to enable different wavelength selection functions in each mask. [Embodiment] Hereinafter, the mode for carrying out the invention will be described in detail. As described in the above configuration 1, the photomask of the present invention is used to form a photomask which is patterned for exposure using a wavelength region including a plurality of peak wavelengths, and the photomask has a transparent substrate and is formed on the transparent substrate. The transfer pattern and the wavelength selection mechanism. The photomask of the present invention is a photomask used for irradiating light of a plurality of peak wavelengths to a photomask by an exposure device, and by transmitting light of a transfer pattern of the photomask, The object to be transferred is exposed. The wavelength selection mechanism of the reticle of the present invention reduces the light transmission intensity of the specific wavelength by 162168.doc 201241550 by reflecting the specific wavelength included in the exposure light irradiated to the reticle, and the result is lowered. Light transmission. That is, the wavelength selecting means reduces the amount of transmission of a specific wavelength, and the decrease is mainly achieved by reflection of light. The peak wavelength refers to the wavelength at which the light intensity appears as a peak. In addition, the term "specific wavelength" as used herein refers to a wavelength which is intended to reduce the degree of transfer of the pattern when the transfer pattern of the mask is transferred using an exposure device, and may also be referred to as a wavelength of the transmission-reducing object. . The wavelength selecting mechanism of the present invention may be an optical filter that can selectively transmit light in other wavelength regions by selectively having a higher reflectance with respect to a specific wavelength in the wavelength region of the exposure light. Relatively higher than the above specific wavelength. Further, the wavelength selecting mechanism of the present invention mainly reduces the amount of light transmitted by the specific wavelength by reflection. Here, "mainly by reflection" means that the degree of decrease in the amount of transmission due to reflection of light is greater than the degree of decrease in the amount of transmission due to absorption of light. For example, a particular wavelength can include an h-line, a g-line. Thereby, the light transmission intensity of the other wavelength region (hereinafter, also referred to as the selective wavelength region) is selectively made relatively opposite to the transmission intensity of the specific wavelength. Preferably, the selected wavelength region is a 匕3 i line, for example, a wavelength of 365 ± 10 nm. When the wavelength selection means of the present invention uses the exposure light including the i-line, the h-line, and the g-line, the wavelength selection means performs in the selected wavelength region (preferably, the wavelength region including the i-line and the h-line and the g-line). Transmittance to a particular wavelength (eg, h-line or g-line). Preferably, the wavelength selection mechanism of the present invention is as follows: the g-line (436 nm), the h-line (405 nm), and the 1-line (365 nm) 'i line included in the exposure light t of the exposure apparatus used. The reflectance is lower than any of the h line and the g line 162168.doc 201241550, and the transmittance of the i line is higher than any of the h line and the g line. Preferably, the wavelength selecting means of the present invention has a transmittance (ratio of transmission intensity to incident intensity) of 60 ° / in a selected wavelength region in the light wavelength region for exposure. the above. For example, the transmittance at a selected wavelength (e.g., i-line) included in the wavelength region may be 6% or more. More preferably, it is 7〇0/〇 or more. Further, the transmittance at the specific wavelength (for example, the h-line or the g-line) in the wavelength region of the exposure light is preferably 40% or less. Further, it is preferably 2% or less. Further, in the wavelength selecting mechanism of the present invention, the decrease in transmittance at a specific wavelength in the wavelength range of the exposure light is mainly achieved by reflection of light. For example, the reflectance in the wavelength region may be 7% or more. Further, as the selected wavelength included in the selected wavelength region, the i-line is selected, and the reflectance at the specific wavelength (for example, the reflectance of the h-line and the g-line) may be 70% or more. In the following, the wavelength selection means has a permeation component or a component to be absorbed as a component other than the reflection with respect to the exposure light. Here, the amount of exposure light that will be irradiated to the wavelength selection mechanism will be reflected by the wavelength selection mechanism as the reflectance (R%) by the wavelength selection mechanism. Absorption amount
分率表示㈣為吸㈣⑽）’將透過波長選擇機構U 百分率表Μ作為透過率（T%)。此時，R、D' τ各者之 計值則成為照射於波長選擇機構之曝光用光之量 100(%)。 I62I68.doc •12· 201241550 …本發明之波長選擇機構中，對所照射之曝光用光中之特 疋波長，主要藉由光之反射而降低透過量，所謂「主要藉 由光之反射」係指，於滿足與反射率、透過率及吸收率相 關之上述條件之情形時，反射率大於吸收率（R>D)。 進而’關於利用本發明之波長選擇機構所實現之光之透 過量的降低，較佳為，以透過率丁而透過之曝光用光具有 ‘”、助於向被轉印體之光阻膜曝光之程度的曝光量(或者強 度），且透過率較理想的是4〇%以下。進而理想的是細以 下。關於藉由波長選擇機構反射之曝光用光，例如於將照 射至波長選擇機構之曝光用光之強度設為⑽。a時較理 想的是反射率為70%以上。進而理想的是，反射率為90% 乂上此時，較理想的是，波長選擇機構使用其自身對曝 光用光之吸收較少之材料，例如，較理想的是吸收率為 10/。以下。進而理想的是，吸收率為5%以下。反射率 R(%)、透過率（T%)、吸收率（D%)能夠由以下方式針對 每個所期望之波長而求出。 反射率R(%)之測定可使用分光光度計進行。 又，透過率（T%)之測定係例如可與反射光測定相同地使 用分光光度計進行測定。 又’關於吸收率（D°/。），例如於將照射至波長選擇機構之 曝光用光設為100%時，可根據上述反射率（R%)及透過率 (T%)且藉由以下之關係式（1)而求出。 吸收率（D%)=100% -反射率（R%)_透過率（τ%) (1) 用於製造液晶顯示面板之曝光裝置係藉由擴大每次曝光 162168.doc •13·The fraction indicates that (4) is the absorption (four) (10))' will pass through the wavelength selection mechanism U percentage table as the transmittance (T%). At this time, the value of each of R and D' τ is 100 (%) of the amount of exposure light irradiated to the wavelength selecting means. I62I68.doc •12·201241550 In the wavelength selection mechanism of the present invention, the wavelength of the characteristic light to be irradiated is mainly reduced by the reflection of light, and the term “mainly by light reflection” is used. The reflectance is greater than the absorbance (R > D) when the above conditions relating to reflectance, transmittance, and absorptivity are satisfied. Further, with respect to the decrease in the amount of light transmitted by the wavelength selecting means of the present invention, it is preferable that the light for exposure transmitted through the transmittance has a '', and the light is exposed to the resist film of the transfer target. The amount of exposure (or intensity), and the transmittance is preferably 4% or less. Further preferably, the thickness is less than or equal to the light. The exposure light reflected by the wavelength selection mechanism is, for example, irradiated to the wavelength selection mechanism. The intensity of the exposure light is set to (10). Preferably, the reflectance is 70% or more. Further, the reflectance is 90%. At this time, it is preferable that the wavelength selection mechanism uses its own exposure. The material which absorbs less light, for example, preferably has an absorptance of 10% or less. Further preferably, the absorptance is 5% or less. Reflectance R (%), transmittance (T%), absorption The rate (D%) can be obtained for each desired wavelength in the following manner: The reflectance R (%) can be measured using a spectrophotometer. Further, the transmittance (T%) can be measured, for example, with reflected light. The measurement is the same using a spectrophotometer. Further, regarding the absorption rate (D°/.), for example, when the exposure light irradiated to the wavelength selecting means is set to 100%, the reflectance (R%) and the transmittance (T%) can be used according to the above The following relationship (1) is obtained. Absorption rate (D%) = 100% - Reflectance (R%) - Transmittance (τ%) (1) Exposure apparatus for manufacturing a liquid crystal display panel is expanded by Each exposure 162168.doc •13·
S 201241550 之轉印面積而縮短曝光時間，從而對製造產距（takt time) 較有利。此時’曝光倍率相對於形成於光罩上之圖案為等 倍，與進行縮小曝光之情形相比，最小解像線寬較大且極 限為3〜4 μιη左右。然而，因近年來之製品性能之提高， 故而要求縮小解像線寬。其原因在於，例如僅藉由將最小 解像線寬設為2〜3 μηι、或其以下，可使液晶顯示面板之 設計自由度飛躍地擴大，從而可使用現有之設備或目前之 流程製造高性能、高功能的液晶顯示面板。 於液晶顯示面板製造時之光微影步驟中，使用超高壓水 銀燈作為曝光用光源’且將自超高壓水銀燈射出之丨線、h 線、g線主要用作使光阻劑感光之曝光用光。藉由使用此 種包含複數個峰值波長之曝光用光中的最短之波長進行曝 光’可提高轉印圖案之解像度。又，藉由僅使用任一單一 之波長進行曝光，可減少曝光裝置之光學系統所具有之色 差之影響’從而可實現轉印圖案之解像度之提高。又，於 使用之光罩為相位偏移光罩之情形時，藉由使用單一波長 之光’可有效地發揮相位偏移效應，進而，於自更短之波 長選擇單一波長之情形時，可實現轉印圖案之解像度之進 一步提高。 因此，藉由將具有此種波長選擇功能之波長選擇機構設 置於光罩上’則不僅是由曝光用光之透過率不同之二種區 域構成轉印圖案之光罩（二元光罩（binary ph〇t〇 mask)等）、 或由曝光用光之透過率為3種以上之區域構成轉印圖案之 多階光罩可容易且以低成本實現轉印圖案之解像度提高， 162168.doc 201241550 而且相位偏移光罩亦可容易且以低成本實現轉印圖案之解 像度提高。 /圖係、表示本發明之光罩(2階光罩)之構成之剖面圖，⑷ 系表示於透明基板之轉印圖案之形成面的相反側設置有波 • I選擇機構之情形，⑻係表示於轉印圖案形成面設置有波 • I選擇機構之情形，⑷係表示於裝設至光罩上之護膜上設 置有波長選擇機構之情形。於透明基板】上形成有轉印圖 案2，進而，本發明之波長選擇機構3分別形成於特定位置 上。 當在光罩上直接設置波長選擇機構之情形時，可例如將 由如下文將述之介電多層膜構成之波長選擇機構，設置於 光罩之形成有轉印圖案的面（光罩正面）（圖1(b)之情形）；或 設置於其相反側之面（光罩背面）（圖1(a)之情形）。光罩之轉 印圖案形成面上’因形成圖案之膜之膜厚而產生有凹凸， 故若考慮介電多層膜之成膜之容易度、膜厚變動或階差對 光學性能之控制之影響’則有利的是成膜於光罩之背面。 於將波長選擇機構形成於光罩之透明基板之背面之情形 夺在曝光時，光罩背面散焦（defocus)，因此，於介電多 層膜上暫時產生有缺陷之情形時亦不會轉印，故較佳。 另一方面’可將本發明之波長選擇機構設置於裝設在光 罩上之護膜上。為了使護膜具有可選擇特定之波長並使透 過之功能，例如可使護膜用膜具有波長選擇功能、或將具 有皮長L擇功此之物备以薄膜之形式而形成於護膜用膜 (以下亦稱為護膜基體）上。其中，於在基體上形成具有 162168.doc 15- 201241550 波長選擇功能之物質之方法中，較理想的是於曝光用光等 強力的光之照射下’能抑制基體或者形成於基體上之物質 因光吸收而溫度上升。因此，藉由反射而使特定波長之透 過降低之本發明較為有利。又，可將自先前用作護膜用膜 之包含硝化纖維素（nitrocellulose)或醋酸纖維素 (acetylcellulose)等之有機材料作為基體，並於其表面上以 薄膜之形式形成具有波長選擇功能之物質。 進而，如圖1(c)所示，安裝於護膜框架5上之護膜用膜 4(基體）可使用玻璃材料，並於該護膜用膜4上形成由下 文將述之介電多層膜構成之波長選擇機構3。於該情形 時，與上述有機材料相比，在選擇波長之光透過率、或光 直進性、耐性等方面有利。波長選擇機構3可形成於護膜 用膜4之正#面中之任^作為構成護膜用膜4之玻璃 材料’適宜使用相對於曝光用光之波長區域内之短波長側 (例如1線）之透過率較高的石英玻璃。 於在遵膜上設置本發明之波長選擇機構之情形時，作 更有利之方面4 了不直接對光罩進行加王可列舉能 波長選擇機構之裝卸之情形。藉此，對於1個光罩，可 現波長選擇機構之有無之變更、或與光學特性不同者之 換又-蔓膜係裝設至已藉由清洗等而獲得必需之清潔 的光罩上使用，故無需對護膜事1後之光I、隹> 、 理。因此，不會對…：膜裝。又後之先罩進仃清洗等 +會對波長選擇機構造成因清洗等引起 性·化學性之負擔’於該方面而言較有利。 又，較理想的是，太 务月之介電多層膜之積層面相對 162168.doc • 16 - 201241550 與曝光用光之照射方向垂直之面成為_5。以上+5。以下，作 為介電多層膜整個面之傾斜度之分佈。 進而理想的是成為_2_5。以上+2.5。以下。其原因在於， 於介電多層膜之傾斜度處於上述範圍内時，分光特性之分 佈實質性地受到抑制，從而可獲得更良好之圖案轉印特 性。 本發明之波長選擇機構係由積層有具有彼此不同之折射 率之複數個介電層之介電多層膜構成。 介電多層膜係例如可僅使較某種波長更長的波長側透 過、或反射。又，可僅使特定之波長透過。 此處，所謂複數係指二層以上之任意之數量。例如，可 使用由具有彼此不同之折射率的2種層交替積層而成之介 電多層膜。或者，亦可將具有彼此不同之折射率之3種以 上之層按照固定之排列順序進行積層。 圖2係表示本發明之波長選擇機構由介電多層膜形成之 情形時之構成例的剖面圖。 於本發明中，使用如下之材料：如上所述，#由反射而 使上述圖案轉印中使用之曝光用光之波長區域内之特定波 長的透過率降低’藉此可調整光透過率特性。例如，如圖 2所示作為波長選擇機構，可使用如下之介電多層膜： 於基體31(光罩之透明基板或護膜用膜等）上，交替地積層 有多層具有各自不同之折射率之2種介電材料（高折射率材 料32與折射率低於其之低折射率材料33)。作為可使用於 包含1線、h線、g線之紫外線區域内之介電材料，就高折 162168.doc •17- 201241550 射率材料而言可使用例如NhO〆五氧化二鈮）、Zr〇2(氧化 鍅）等，就低折射率材料而言可使用例如Si〇2等。作為本 發明中使用之介電多層膜，較佳為紫外線區域之吸收率為 10。/。以下，且於紫外線區域内具有較高之耐性者。 由此種介電多層膜構成之波長選擇機構中，因所積層之 介電材料之折射率不同，故而於介電膜層之邊界會產生夫 瑞奈反射（fresnel reflection)，且若藉由將各介電膜層之折 射率、厚度調整為適當之值，而成為如將積層彳多層之各 個邊界上產生之夫瑞奈反射波彼此相互加強之干涉狀態， 則作為反射鏡而發揮功能。因此’介電多層膜係利用夫瑞 奈反射’可使光之吸收變得極其低’故可解決藉由光之吸 收而對光透過率特性進行調整之先前之光學據光器的問 題。 關於形成該介電多層膜之各介電膜層之膜厚或積層數 量，可根據欲藉由反射而使透過率減少之波長區域與反射 率等參數’藉由模擬而求出，從❼，因光學設計之自由度 較高’故可有利地使用於本發明。 又 又’作為介電多層財之低折射率材料與高折射率材料 之積層方法，含如下之構成：將使若干低折射率材料 與高折射率材料組合而成者作為i個單位，並將㈤個單位 反覆進行積層。組合之單位存在複數個，且亦可使 固定之序列積層而構成。 介電材料可猎由真空蒸鑛或濺鍍（sputtering)等成膜方法 而積層於基體上。 162168.doc 201241550 例如’於藉由一面維持i線之透過率，一面藉由提高包 含h線與g線之特定波長之反射率而降低透過率之情形時 (參照圖3之反射率特性曲線），可藉由將h線之反射率較高 之介電多層膜、與g線之反射率較高之介電多層膜進行積 層’而成為i線之透過強度相對較高之介電多層膜。或 者，可構成使包含h線與g線該兩個區域内具有較高之反射 率的介電多層膜，而相對地提高i線之透過率。如上所 述’藉由以將不欲透過之波長區域之光反射之方式構成介 電多層膜，從而可構成具有各種光學特性之波長選擇機 構，因此介電多層膜適宜作為本發明之波長選擇機構。 再者，在用於製造液晶顯示面板等之曝光裝置中，為了 儘可能地縮短1次曝光時間，且縮短製品之加工產距而 將曝光用光設計成照射區域之每單位面積之光照射能量非 常大，於波長選擇機構使用光吸收較大之材料之情形時， 被吸收之光轉換成熱，從而藉由照射曝光用光，使得波長 選擇機構之溫度上升。因此，若光罩之溫度上升，則轉印 圖案之精度容易劣化。 於曝光裝置中設有用以對光罩之溫度進行控制之冷卻裝 置，但根據波長選擇機構之光學特性而光吸收量有變化， 從而產生之熱之量亦發生變化。若考慮到此種情形，則藉 由特定波長之反射而降低曝光用光之透過率的本發明之光 罩之發熱較小，故非常有利。 於本發明之波長選擇機構中，選擇波長（例如丨線）之透過 率較佳為60%以上。若所期望之波長區域之透過率為6〇% 162168.doc •19- 201241550 以上，則可確保光阻曝光時必需之能量，因此可防止藉由 曝光時間之增加而產生之產距之增加。又，波長選擇機構 之光罩面内之透過率不均較理想的是土1〇%以下。進而理 想的是±5。/。以下，更理想的是成為±1%以下。其原因在 於，藉由將透過率不均設為上述範圍，則透過之曝光用光 之面内分佈變得均勻’且轉印圖案精度亦變得均勻。 於本發明之波長選擇機構中，使特定波長光（例如h線或 g線）反射，該情形時之反射率較佳為7〇%以上。反射率進 而較佳為90%以上。其原因在於，當反射率處於該範圍内 之情形時，透過波長選擇機構之曝光用光衰減，且即便是 上述其他波長區域之光亦無使光阻劑感光之虞，從而可較 佳地獲得本發明之效果。又，波長選擇機構之光罩面内之 反射率不均較理想的是;11 〇 %以下。 再者，對於光罩，為了確認圖案面上是否產生有缺陷， 而進行缺陷檢查。於該缺陷檢查中，有藉由CCD(Charge Couple Device ’電荷耦合裝置）等對圖案面進行拍攝之缺 陷檢查、或使用有光學顯微鏡之目測檢查等。於缺陷檢查 裝置中’在使用可見光區域之光作為檢查光之方面較為便 利。又’作為缺陷檢查裝置中使用之自動調焦（aut〇f〇cus) 機構’使用氦氖雷射（helium neon laser)(633 nm)或半導體 雷射等可見光雷射等。因此，為了不妨礙此種光學性缺陷 檢查’本發明之波長選擇機構較佳為於上述曝光用光之波 長區域外之用於檢查中之光波長下具有某種程度之透過 率。例如’較理想的是’於可見光區域之一部分具有光透 162168.doc -20· 201241550 過性。例如，較理想的是’於5〇〇 nm〜650 nm之波長區域 之任一波長下，透過率均為70%以上。更理想的是，於上 述波長區域内，檢查光或者自動調焦中使用之可見光之透 過率較佳為70%以上。若以具有此種透過率特性之方式設 什波長選擇機構，則可精度良好地對形成有波長選擇機構 的本發明之光罩進行缺陷檢查，從而可保證所完成之光罩 之品質。 再者’使用之曝光裝置之曝光波長較佳為應用5〇〇 下。 本發明適宜用於如下等光罩：具有包含遮光部與透光部 之轉印圖案之所謂二元光罩；或藉由具有包含遮光部、透 光部、及半透光部等對於曝光用光之透過率不同的複數個 區域之轉印圖案，而於被轉印體上之光阻劑上形成階差形 狀之多階光罩。 又’本發明亦適宜用於具有相位偏移效應之光罩（相位 偏移光罩）。於具有相位偏移效應之光罩中，其曝光時使 用之曝光用光之性質對轉印之圖案的精度造成較大的影 響。若使用本發明之波長選擇機構，則可限定有助於轉印 之波長區域，故利用相位偏移效應可獲得提高解像度之效 果。 於藉由對光之相位進行控制而改善瞭解像度或焦點深 度、且提高了轉印特性之相位偏移光罩係構成為，具有透 光部與相位調整部，且透過相位調整部之曝光用光之相 位、與透過透光部之曝光用光之相位大致相差18〇度。因 162168.doc -21- 201241550 透過透光部之曝光用光、與透過相位調整部之曝光用光彼 此干涉，藉此，可改善解像度或焦點深度◊作為應用本發 明之相位偏移光罩，包括於基板上具有刻蝕之利文森型相 位偏移光罩、無鉻（chromeless)型相位偏移光罩等。所謂 大致180度係指180±10度之範圍。 為了進一步提高此種相位偏移光罩之效果，如下情形較 為有利.藉由本發明之波長選擇機構而限定有助於圖案轉 印之波長區域，利用圖案之邊緣（edge)產生之光之干涉而 實現對比度之提高。於該情形時，選擇波長較理想的是更 短的波長光，例如，較理想的是相較g線而使用h線，進而 理想的是相較h線而使用i線。 [實施例] (實施例1) 此處，作為本發明之光罩之具體之實施例，對具有基板 刻蝕之利文森型相位偏移光罩進行說明。 圖4係表示上述利文森型相位偏移光罩之製造步驟之剖 面圖。根據該製造步驟進行說明。 準備光罩基底，其使用尺寸為1220 mmxl400 mm、厚度 為13 mm之石英基板10且於該基板上形成有遮光膜u(將Cr 膜設為1 00 nm，於其上形成1〇 nm之氧化鉻層作為低反射 層）’使用旋轉塗佈（spin coating)或者CAP塗佈（CAP coater)等方法，於遮光膜11上，以！〇〇〇 nm之厚度塗佈正 型光阻劑（positive resist)，從而形成第1光阻膜i2(圖 4(a)) 〇 162168.doc -22· 201241550 接著對上述第i光阻膜12，藉由雷射繪圖機進行特定 之緣圖曝光，且藉由喷射方式等方法，向第1光阻膜12供 給K〇H等無機驗性水溶液或取H(Tetra Methy 1 An_ium y ide纟氧化四甲基錢）水溶液等顯影液而進行顯 影’從而形成覆蓋遮光部與相位偏移部之默完成區域之 第1光阻圖案12a(圖4(b))。 接著，將上述第！光阻圖案12a作為光罩，藉由石肖酸㈣ ㈣麵ammonium nit施）與過氣酸之混合溶液等触刻 劑，對遮紐u進行㈣，從㈣成遮紐圖案na(圖 4⑽。此後，使用光阻剝離液等而去除殘留之^光阻圖 案 12a(圖 4(d))。 接著，於形成有遮光膜圖案lla之基板上之整個面上， 再次藉由旋轉塗佈或CAP塗佈等方法，以l〇〇〇 nm之厚度 形成與上述相同之材料的第2光阻膜（為方便起見，以與^ 1光阻膜相同之參照符號「12」表示）（圖4(e))。 接著，對上述第2光阻膜12,藉&雷射繪圖機而進行特 定之緣圖曝光’且藉由喷射方式等方法，向光阻膜供給顯 影液而進行顯影，從而形成覆蓋除相位偏移部以外之區域 的第2光阻圖案12b(圖4(f))。 接著，將上述第2光阻圖案12b作為光罩而對遮光膜圖案 Ha進行蝕刻，從而去除相位偏移部預定形成區域之遮光 膜圖案（圖4(g))。繼而，將第2光阻圖案12b、與將第2光阻 圖案12b作為光罩進行蝕刻後之遮光膜作為光罩，藉由使 用有包含氟酸（hydrofluoric acid)等之蝕刻劑的基板之敍 162168.doc •23· 201241550 刻’而對石英基板1 〇進行刻姓，且触刻係進行至相對於透 過透光部之曝光用光實質上具有180度之相位偏移量之深 度為止’從而形成相位偏移部i 〇a(圖4(h))。此後，使用光 阻剝離液等去除殘留之第2光阻圖案12b，從而完成圖案 (圖 4(i)) 〇 接著，形成本發明之波長選擇機構。 具體而言’使用濺鍍法，於光罩之背面（與圖案形成面 為相反側之面），交替地使高折射率材料（使用Nb2〇5)與低 折射率材料（使用Si〇2)成膜，從而形成介電多層膜。堆積 膜厚與層數係基於欲反射之波長區域而決定。具體而言， 藉由使40 nm〜80 nm2膜厚範圍内之高折射率材料與低折 射率材料組合並交替地積層22層，使h線及較其波長更長 光反射從而降低该波長區域之透過率。藉此，丨線之 透過率變得相對大於h線、g線。 以此方式，完成作為本發明之一實施例之利文森型之相 位偏移光罩（圖4(j))。 於本實施例中，包含介電多層膜之波長選擇機構之形 係於與光罩之圖案形成面不同的面（光罩背面）上進行。 又，如圖5所示，於本發明中，作為波長選擇機構， 使用於濩膜上具有其功能者。例如，準備如下之護膜， 護膜係將安裝於護膜框架15上之厚度為lmm之石英玻璃 為護^用膜14(基體）’且於其表面上以相同之方法形心 上述，|電多層膜之設計相同的波長選擇機構13，將該護月 貼附至已完成上述圖案之光罩(圖4(i))上，藉此完成本, 162168.doc •24- 201241550 明之附護膜之光罩。 接著’使用以上文所述之方式完成之光罩（圖4⑴），進 行解像度之驗證。如圖6所示，上述光罩具有以下之圖案 作為解像度驗證用圖案。 即’設為利文森型相位偏移圖案之線與間隙圖案（Hne and space pattern) ’其中，挾著遮光部（a)，而交替地排列 有相位偏移量為〇度之透光部（B)、與相位偏移量為18〇度 之相位偏移部（C卜該線與間隙圖案係以如下之方式排 列*鄰接之遮光部A與相位偏移部c之中心線間之距離係 與鄰接之遮光部A與透光部b之中心線間之距離相同，且 遮光部A、透光部B、相位偏移部c之各圖案之寬度亦成為 與上述中心線間之距離的值相同。此處，上述中心線間之 距離係於1.5 μηι〜3.0 μιη之範圍内，且以〇 1 ^1111為單位分 別形成有複數種尺寸之線與間隙圖案之組。例如，可將上 述中〜線間之距離為2.0 者稱為2.〇 0爪線與間隙圖案。 為了以與光罩上之圖案相同之尺寸將圖案形成於被轉印 體上，而設定以下之條件。 作為用以使於顯影後光阻膜作為蝕刻遮罩而有殘留之區The transfer area of S 201241550 shortens the exposure time, which is advantageous for the production of takt time. At this time, the 'exposure magnification is equal to that of the pattern formed on the photomask, and the minimum resolution line width is larger than the case where the reduction exposure is performed, and the limit is about 3 to 4 μm. However, due to the improvement in product performance in recent years, it is required to reduce the resolution line width. The reason for this is that, for example, by setting the minimum resolution line width to 2 to 3 μm or less, the design freedom of the liquid crystal display panel can be greatly expanded, so that the existing equipment or the current process can be used to manufacture high. Performance, high-performance LCD panel. In the photolithography step in the manufacture of the liquid crystal display panel, an ultrahigh pressure mercury lamp is used as the light source for exposure, and the x-ray, h-line, and g-line emitted from the ultra-high pressure mercury lamp are mainly used as exposure light for sensitizing the photoresist. . The resolution of the transfer pattern can be improved by performing exposure using the shortest wavelength of the exposure light including a plurality of peak wavelengths. Further, by performing exposure using only a single wavelength, the influence of the chromatic aberration of the optical system of the exposure apparatus can be reduced, and the resolution of the transfer pattern can be improved. Moreover, when the photomask used is a phase shift mask, the phase shift effect can be effectively utilized by using a single wavelength of light, and further, when a single wavelength is selected from a shorter wavelength, A further improvement in the resolution of the transfer pattern is achieved. Therefore, by arranging the wavelength selection mechanism having such a wavelength selection function on the reticle, the reticle of the transfer pattern is formed not only by the two regions having different transmittances of the exposure light (binary mask) 〇 〇 〇 〇 、 、 、 、 、 、 、 、 、 、 、 、 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 162 Moreover, the phase shift mask can also achieve an improved resolution of the transfer pattern at a low cost. A diagram showing a configuration of a photomask (second-order mask) of the present invention, and (4) showing a case where a wave I selection mechanism is provided on the opposite side of the formation surface of the transfer pattern of the transparent substrate, and (8) It is shown that the wave pattern forming surface is provided on the transfer pattern forming surface, and (4) is a case where the wavelength selecting means is provided on the film attached to the mask. The transfer pattern 2 is formed on the transparent substrate, and further, the wavelength selection mechanism 3 of the present invention is formed at a specific position. When a wavelength selecting mechanism is directly provided on the photomask, for example, a wavelength selecting mechanism composed of a dielectric multilayer film as will be described below may be provided on a surface of the photomask on which the transfer pattern is formed (the front side of the mask) ( Figure 1 (b); or on the opposite side (back of the mask) (in the case of Figure 1 (a)). The transfer pattern forming surface of the photomask has irregularities due to the film thickness of the patterned film. Therefore, the ease of film formation of the dielectric multilayer film, the variation in film thickness, or the influence of the step on the control of optical properties are considered. 'It is advantageous to form a film on the back of the reticle. When the wavelength selection mechanism is formed on the back surface of the transparent substrate of the reticle, the back surface of the reticle is defocused when exposed, and therefore, the defect is not temporarily transferred to the dielectric multilayer film. Therefore, it is better. On the other hand, the wavelength selecting mechanism of the present invention can be disposed on a protective film mounted on a reticle. In order to allow the film to have a function of selecting a specific wavelength and transmitting it, for example, the film for a film may have a wavelength selection function, or a material having a skin length L may be formed in the form of a film for use in a film. The film (hereinafter also referred to as a film substrate). Among them, in the method of forming a substance having a wavelength selection function of 162168.doc 15-201241550 on a substrate, it is preferable to suppress the substrate or the substance formed on the substrate by irradiation with strong light such as exposure light. Light absorbs and the temperature rises. Therefore, the present invention which reduces the transmission of a specific wavelength by reflection is advantageous. Further, an organic material containing nitrocellulose or acetylcellulose or the like which has been used as a film for a film as a substrate can be used as a substrate, and a substance having a wavelength selective function can be formed as a film on the surface thereof. . Further, as shown in Fig. 1(c), a film 4 (base) for the film for attachment to the film frame 5 can be made of a glass material, and a dielectric multilayer which will be described later is formed on the film 4 for the film. A wavelength selection mechanism 3 composed of a film. In this case, compared with the above organic material, it is advantageous in terms of light transmittance at selected wavelengths, optical straightness, resistance, and the like. The wavelength selecting means 3 can be formed in the positive surface of the film 4 for the film as the glass material constituting the film 4 for the film. It is suitable to use the short-wavelength side in the wavelength region with respect to the light for exposure (for example, 1 line) ) Quartz glass with a high transmittance. In the case where the wavelength selecting mechanism of the present invention is provided on the film, it is more advantageous that the reticle is not directly attached to the case where the wavelength selective mechanism can be attached or detached. Therefore, for one mask, the presence or absence of the wavelength selection mechanism or the change of the optical characteristics can be used on the mask that has been cleaned by cleaning or the like. Therefore, there is no need for the light I, 隹> Therefore, it will not be mounted on...: film. In addition, it is advantageous in this respect to cause the wavelength selection mechanism to cause a chemical/chemical burden due to cleaning, etc. Moreover, it is desirable that the layer of the dielectric multilayer film of the CUHK is _5 with respect to the plane perpendicular to the direction of exposure light exposure of 162168.doc • 16 - 201241550. Above +5. Hereinafter, the distribution of the inclination of the entire surface of the dielectric multilayer film is used. Further, it is desirable to become _2_5. Above +2.5. the following. The reason for this is that when the inclination of the dielectric multilayer film is within the above range, the distribution of the spectral characteristics is substantially suppressed, so that more favorable pattern transfer characteristics can be obtained. The wavelength selective mechanism of the present invention is composed of a dielectric multilayer film in which a plurality of dielectric layers having different refractive indices are laminated. The dielectric multilayer film can, for example, pass or reflect only a wavelength side longer than a certain wavelength. Moreover, only a specific wavelength can be transmitted. Here, the plural means any number of two or more layers. For example, a dielectric multilayer film in which two layers having different refractive indices from each other are alternately laminated can be used. Alternatively, three or more layers having refractive indices different from each other may be laminated in a fixed arrangement order. Fig. 2 is a cross-sectional view showing a configuration example of a case where the wavelength selecting means of the present invention is formed of a dielectric multilayer film. In the present invention, a material is used in which the transmittance of a specific wavelength in the wavelength region of the exposure light used for the pattern transfer is lowered by reflection as described above, whereby the light transmittance characteristics can be adjusted. For example, as the wavelength selection mechanism shown in FIG. 2, a dielectric multilayer film may be used: on the substrate 31 (transparent substrate for a photomask or a film for a film, etc.), a plurality of layers are alternately laminated and have different refractive indexes. Two kinds of dielectric materials (high refractive index material 32 and low refractive index material 33 having a lower refractive index). As a dielectric material that can be used in the ultraviolet region including the 1-line, h-line, and g-line, a high-definition 162168.doc • 17- 201241550 luminosity material can be used, for example, NhO 〆 bismuth pentoxide, Zr 可2 (yttrium oxide) or the like, for example, Si〇2 or the like can be used as the low refractive index material. As the dielectric multilayer film used in the present invention, it is preferred that the absorption ratio in the ultraviolet region is 10. /. Hereinafter, it has a high tolerance in the ultraviolet region. In the wavelength selection mechanism composed of such a dielectric multilayer film, since the refractive index of the dielectric material of the laminated layer is different, a fresnel reflection occurs at the boundary of the dielectric film layer, and The refractive index and the thickness of each of the dielectric film layers are adjusted to appropriate values, and they function as mirrors in an interference state in which the Freynet reflection waves generated at the respective boundaries of the multilayered multilayer are mutually strengthened. Therefore, the "dielectric multilayer film utilizes the Freynet reflection" to make the absorption of light extremely low, so that the problem of the prior optical light fixture which adjusts the light transmittance characteristics by absorption of light can be solved. The thickness or the number of layers of each dielectric film layer forming the dielectric multilayer film can be obtained by simulation based on a parameter such as a wavelength region and a reflectance at which transmittance is reduced by reflection. Because of the high degree of freedom in optical design, it can be advantageously used in the present invention. And a method of laminating a low refractive index material and a high refractive index material as a dielectric multilayer, comprising the following composition: combining a plurality of low refractive index materials and a high refractive index material as i units, and (5) Units are repeatedly layered. There are a plurality of units combined, and a fixed sequence may be laminated. The dielectric material can be layered on the substrate by a film forming method such as vacuum distillation or sputtering. 162168.doc 201241550 For example, when the transmittance of the i-line is maintained while the transmittance of the specific wavelength of the h-line and the g-line is increased, the transmittance is lowered (refer to the reflectance characteristic curve of FIG. 3). The dielectric multilayer film having a high reflectance of the h-line and the dielectric multilayer film having a high reflectance of the g-line can be laminated to form a dielectric multilayer film having a relatively high transmission intensity of the i-line. Alternatively, a dielectric multilayer film having a high reflectance in the two regions including the h-line and the g-line may be formed to relatively increase the transmittance of the i-line. As described above, by forming a dielectric multilayer film by reflecting light in a wavelength region not to be transmitted, a wavelength selecting mechanism having various optical characteristics can be constructed, and thus a dielectric multilayer film is suitable as the wavelength selecting mechanism of the present invention. . Further, in the exposure apparatus for manufacturing a liquid crystal display panel or the like, in order to shorten the exposure time as much as possible and to shorten the processing yield of the product, the exposure light is designed as the light irradiation energy per unit area of the irradiation region. Very large, in the case where the wavelength selecting means uses a material having a large light absorption, the absorbed light is converted into heat, whereby the temperature of the wavelength selecting means is raised by irradiating the exposure light. Therefore, if the temperature of the photomask rises, the accuracy of the transfer pattern is likely to deteriorate. A cooling device for controlling the temperature of the mask is provided in the exposure apparatus. However, depending on the optical characteristics of the wavelength selection mechanism, the amount of light absorption changes, and the amount of heat generated also changes. In view of such a situation, the hood of the present invention which reduces the transmittance of exposure light by reflection of a specific wavelength is less advantageous in heat generation. In the wavelength selecting mechanism of the present invention, the transmittance of the selected wavelength (e.g., 丨 line) is preferably 60% or more. If the transmittance in the desired wavelength region is 6〇% 162168.doc •19-201241550 or more, the energy necessary for the photoresist exposure can be ensured, so that the increase in the yield by the increase in the exposure time can be prevented. Further, the transmittance unevenness in the mask surface of the wavelength selecting means is preferably 1% or less of the soil. The ideal is ±5. /. Hereinafter, it is more desirable to be ±1% or less. When the transmittance unevenness is within the above range, the in-plane distribution of the transmitted light is made uniform, and the transfer pattern accuracy is also uniform. In the wavelength selecting mechanism of the present invention, light of a specific wavelength (e.g., h line or g line) is reflected, and in this case, the reflectance is preferably 7% or more. The reflectance is preferably more than 90%. The reason for this is that when the reflectance is in the range, the exposure light transmitted through the wavelength selective mechanism is attenuated, and even if the light in the other wavelength region is not exposed to the photoresist, it is preferably obtained. The effect of the present invention. Further, the unevenness of the reflectance in the mask surface of the wavelength selecting means is preferably 11 〇 % or less. Further, in the photomask, a defect inspection is performed in order to confirm whether or not a defect occurs on the pattern surface. In the defect inspection, there is a defect inspection for photographing a pattern surface by a CCD (Charge Couple Device) or a visual inspection using an optical microscope. In the defect inspection apparatus, it is convenient to use light in the visible light region as the inspection light. Further, as the autofocusing mechanism used in the defect inspection device, a visible laser such as a helium neon laser (633 nm) or a semiconductor laser is used. Therefore, in order not to impede such optical defect inspection, the wavelength selecting means of the present invention preferably has a certain degree of transmittance at a wavelength of light for inspection outside the wavelength region of the exposure light. For example, it is more desirable to have light transmission in one of the visible light regions 162168.doc -20· 201241550. For example, it is desirable that the transmittance is 70% or more at any wavelength in the wavelength range of 5 〇〇 nm to 650 nm. More preferably, in the above wavelength region, the transmittance of visible light used for inspection light or autofocusing is preferably 70% or more. When the wavelength selecting means is provided so as to have such transmittance characteristics, the defect inspection of the photomask of the present invention in which the wavelength selecting means is formed can be performed with high precision, and the quality of the completed photomask can be ensured. Further, the exposure wavelength of the exposure apparatus used is preferably 5 应用. The present invention is suitably used for a photomask having a so-called binary mask including a transfer pattern of a light-shielding portion and a light-transmitting portion, or a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for exposure A transfer pattern of a plurality of regions having different light transmittances, and a multi-step mask having a stepped shape formed on the photoresist on the transfer target. Further, the present invention is also suitable for a photomask (phase shift mask) having a phase shift effect. In a reticle having a phase shift effect, the nature of the exposure light used for exposure causes a large influence on the accuracy of the transferred pattern. When the wavelength selecting mechanism of the present invention is used, the wavelength region contributing to the transfer can be limited, so that the effect of improving the resolution can be obtained by the phase shift effect. A phase shift mask having improved light transmittance and a depth of focus and having improved transfer characteristics by controlling the phase of the light is configured to have a light transmitting portion and a phase adjusting portion, and the phase adjusting portion is used for exposure The phase of the light is substantially different from the phase of the exposure light transmitted through the light transmitting portion by 18 degrees. 162168.doc -21- 201241550 The light for exposure through the light transmitting portion and the light for exposure through the phase adjusting portion interfere with each other, whereby the resolution or the depth of focus can be improved as the phase shift mask to which the present invention is applied. The invention comprises a Levenson-type phase shift mask with etching on the substrate, a chromeless phase shift mask and the like. The term "roughly 180 degrees" means a range of 180 ± 10 degrees. In order to further improve the effect of the phase shift mask, it is advantageous to use the wavelength selection mechanism of the present invention to define a wavelength region that facilitates pattern transfer, and interference of light generated by the edge of the pattern. Improve the contrast. In this case, it is preferable to select a shorter wavelength light, for example, it is preferable to use the h line as compared with the g line, and it is desirable to use the i line as compared with the h line. [Embodiment] (Embodiment 1) Here, as a specific embodiment of the photomask of the present invention, a Levenson-type phase shift mask having a substrate etching will be described. Fig. 4 is a cross-sectional view showing the manufacturing steps of the above-described Levenson type phase shift mask. This manufacturing process will be described. A reticle substrate is prepared which uses a quartz substrate 10 having a size of 1220 mm×l 400 mm and a thickness of 13 mm and a light-shielding film u is formed on the substrate (the Cr film is set to 100 nm, and oxidation of 1 〇 nm is formed thereon) The chromium layer is used as a low-reflection layer on the light-shielding film 11 by a method such as spin coating or CAP coating. A positive resist is applied to the thickness of 〇〇〇nm to form a first photoresist film i2 (Fig. 4(a)) 〇162168.doc -22· 201241550 Next, the above ith photoresist film 12 By performing a specific edge image exposure by a laser plotter, and supplying an inorganic aqueous solution such as K〇H or the like to H (Tetra Methy 1 An_ium y ide 纟 oxidation) to the first photoresist film 12 by a method such as a sputtering method. The developing solution such as a tetramethyl hydrazine aqueous solution is developed to form a first photoresist pattern 12a covering the opaque portion of the light shielding portion and the phase shift portion (Fig. 4(b)). Next, the above will be! The photoresist pattern 12a is used as a mask, and is made of a four-dimensional viscous agent by a contact agent such as a mixed solution of a tartaric acid (tetra) and a peroxygen acid, and is formed into a hatching pattern na from (4) (Fig. 4 (10). Thereafter, the remaining photoresist pattern 12a is removed by using a photoresist stripping solution or the like (Fig. 4(d)). Next, on the entire surface of the substrate on which the light-shielding film pattern 11a is formed, by spin coating or CAP again By coating or the like, a second photoresist film having the same material as described above is formed to a thickness of 10 nm (for convenience, the same reference numeral "12" as the photoresist film of "1" is used) (FIG. 4) (e)) Next, the second resist film 12 is subjected to a specific edge image exposure by a & laser plotter, and a developing solution is supplied to the photoresist film by a method such as a jetting method to perform development. Thus, the second photoresist pattern 12b covering the region other than the phase shift portion is formed (FIG. 4(f)). Next, the second photoresist pattern 12b is used as a mask to etch the light-shielding film pattern Ha to remove The phase shifting portion is formed to form a light shielding film pattern of the region (Fig. 4(g)). Then, the second photoresist pattern 12b and The second photoresist pattern 12b is used as a mask after the mask is etched as a mask, and the quartz is used by using a substrate containing an etchant such as hydrofluoric acid. The substrate 1 is etched, and the etch is performed until the depth of the phase shift amount of 180 degrees with respect to the exposure light transmitted through the light transmitting portion is formed to form the phase shift portion i 〇a (FIG. 4 (FIG. 4) h)). Thereafter, the remaining second photoresist pattern 12b is removed using a photoresist stripping solution or the like to complete the pattern (Fig. 4(i)). Next, the wavelength selecting mechanism of the present invention is formed. Specifically, 'sputtering is used. The film is formed on the back surface of the photomask (the side opposite to the pattern forming surface) by alternately forming a high refractive index material (using Nb2〇5) and a low refractive index material (using Si〇2) to form a dielectric. Multilayer film. The thickness of the deposited film and the number of layers are determined based on the wavelength region to be reflected. Specifically, the high refractive index material and the low refractive index material in the film thickness range of 40 nm to 80 nm 2 are combined and alternately laminated. 22 layers, making the h line and the light longer than its wavelength Thereby, the transmittance of the wavelength region is lowered. Thereby, the transmittance of the ridge line becomes relatively larger than the h line and the g line. In this way, the phase shift mask of the Livingstone type which is one embodiment of the present invention is completed ( Fig. 4(j)) In the present embodiment, the shape of the wavelength selection mechanism including the dielectric multilayer film is performed on a surface different from the pattern forming surface of the photomask (back surface of the mask). In the present invention, as the wavelength selecting means, it is used for the function of the ruthenium film. For example, a protective film is prepared which protects the quartz glass having a thickness of 1 mm attached to the film frame 15 ^Using the film 14 (matrix)' and centripetically forming the same on the surface thereof, the same wavelength selection mechanism 13 is designed to attach the moon protection to the reticle that has completed the above pattern (Fig. 4(i)), by this, 162168.doc • 24-201241550 The mask of the protective film. Next, the reticle (Fig. 4 (1)) completed in the manner described above was used to verify the resolution. As shown in Fig. 6, the photomask has the following pattern as a pattern for resolution verification. That is, 'the line and the gap pattern (Hne and space pattern) of the Levenson-type phase shift pattern', in which the light-shielding portion (a) is alternately arranged, and the light-transmitting portion having the phase shift amount of the twist is alternately arranged ( B), a phase shifting portion having a phase shift amount of 18 degrees (C: the line and the gap pattern are arranged in such a manner that the distance between the adjacent center line of the light blocking portion A and the phase shift portion c is The distance between the adjacent shading portion A and the center line of the light transmitting portion b is the same, and the width of each of the light shielding portion A, the light transmitting portion B, and the phase shift portion c is also a value of the distance from the center line. Here, the distance between the center lines is in the range of 1.5 μηη to 3.0 μηη, and a plurality of lines and gap patterns of a plurality of sizes are respectively formed in units of 〇1^1111. For example, the above may be The distance between the lines and the line is 2.0. It is called the 2. 〇 0 claw line and the gap pattern. In order to form the pattern on the transfer target body in the same size as the pattern on the reticle, the following conditions are set. Residual area after the development of the photoresist film as an etch mask
你使用正型光阻劑）。 馬足11%以下，且被去除之區域之透 上（再者，此處被轉印體上之光阻劑 於未滿足以上之條件之情形時，存 162J68.doc •25- 201241550 在如下情形：於使用實際之光罩進行曝光時，出現光罩面 内產生之線寬之不均、或曝光用光之照度之不均等影麼 (參照圖7)。 β 又，作為被轉印體之流程條件，相較藉由顯影而實際通 過光罩曝光之光阻膜之區域（上述曝光之透過率為4〇%以上 之區域），藉由過度顯影（〇Ver_deVel〇pment)會使該區域擴 大，且其擴大量係於每一個邊緣為〇 2 μιη。又，可假邦如 下情形：該所擴大之區域藉由蝕刻而使形成於被轉印體上 之線寬之每一個邊緣進而擴大0.25 μΓΏ。即，相對於經曝 光之區域之寬度，因經由顯影與蝕刻，故而於兩個邊緣擴 大（0.2x2+ 0.25χ2)=0·9 μΐΏ 〇 又，將使用本實施例之光罩而圖案化至被轉印體時的曝 光用光之光學條件設為ΝΑ=0·083、σ =0.9，於設置有本實 施例之波長選擇機構之情形時，將曝光用光波長強度比設 為g/h/i=0/0/100，且設為縮小曝光倍率=1 〇，並將光罩2 遮光部A之透過率設為〇%，將透光部B之透過率設為 100 /〇,將相位偏移量設為〇度，將相位偏移部C之透過率 設為100°/。’且將相位偏移量設為18〇度。 根據以上之條件，針對上述光罩之丨5 μιη〜3 0 之線 與間隙圖案獲得透過光之光強度曲線，以G1 _為單位進 行描繪(plot)。此時’ II由設有CCD(拍攝元件)之拍攝機構 對已透過光罩之曝光用光進行㈣，自所獲得之圖像資訊 獲得光強度曲線。使用如下之模擬器：其中裝備有使光學 特性近似於實際之曝域置之曝光用光與成像光學系統: 162168.doc * 26 - 201241550 檢查光與檢查光學系統’將通過該檢查光學系統之檢查光 照射至光罩，藉此，將與由實際之曝光裝置轉印時㈣之 轉印像成像於CCD等拍攝機構而獲取。 藉由如上所述般獲取之光強度曲線，可選取2〇㈣線與 間隙圖案作為滿足上述圖案形成條件者。 根據該2.0，線與間隙圖案之透過率曲線(參照圖乃，於 被轉印體中’欲殘留光阻膜之區域之最小透過率為， 欲去除光阻劑之區域之透過率為4〇%以上，滿足同時實現 光阻膜之殘留與完全去除之條件。又，上述透過率為4〇% 以上之區域之寬度為I.1 _，因此，如上所述，藉由顯影 流程與蝕刻流程，，線寬較之實際所曝光之區域擴大〇9 該經曝光之區域最終於被轉印體上成為2〇叫 寬。 ’ 根據以上情形，基於透過率曲線且藉由模擬可確認藉由 形成於本實施例之光罩上之2 ()㈣線與間隙圖案，可於被 轉印體上形成2.〇 μπι線與間隙圖案。 再者料本發明之另一實施例，製作不具有遮光膜圖 案之基板㈣型相位偏移光罩（無路型），與本實施例相同 地進仃解像度之驗證，結果可確認具有提高解像度之效 果。 (比較例1) 對未設置有本發明之波長選擇機構之光罩（來昭圖 4彳之解像度之驗證。再者，將曝光用光波長 強度比設為g/h/i=34.8/32.1/33.卜除此之外，與上述實施 162168.doc -27· 201241550 例相同地獲得2.0 μηι線與間隙圖案之透過率曲線（參照圖7 中之黑圈之描繪）》 其結果，可知無法滿足用以使於顯影後光阻膜作為蝕刻 遮罩而殘留之區域、與於顯影後光阻劑·完全被去除之區域 該兩種區域均存在的被曝光條件（就已透過光罩之曝光用 光之透過率而言，有膜殘留之區域之最小透過率為11%以 下，且去除之區域之透過率為40%以上），而藉由形成於光 罩上之2.〇 μιη線與間隙圖案，無法於被轉印體上形成2 〇 μηι線與間隙圖案。 (實施例2) 製作將包含與施例1相同之介電多層膜之波長選擇機構 形成於光罩背面之如圖1 (a)所示的二元光罩，與實施例1相 同地，利用線與間隙圖案對轉印圖案之解像度進行評估。 其結果，基於透過率曲線且藉由模擬可確認，能夠轉印線 寬為2 · 8 («ini之圖案。 (比較例2) 對於除了未設置上述波長選擇機構之外均與實施例2相 同地製作之2階光罩，與實施例丨相同地，對於轉印圖案進 行解像度評估。其結果，基於透過率曲線且藉由模擬可確 認’小於3.0 μηι之圖案未得以解像。 根據以上之實施例2、比較例2之結果可知，本發明具有 可使能轉印之線寬縮小7%左右之效果。 根據以上内容可明確，本發明之波長選擇機構可使曝光 用光波長中之必需之波長區域透過’另—方面，於特定之 162168.doc -28 - 201241550 波長區域内降低透過率（截止光）。光之截止主要係藉由光 之反射而實現，因此可抑制因光吸收而引起的熱之產生， 從而可抑制因光罩或濩膜用膜之溫度上升而引起的轉印圖 案之尺寸變化或材料劣化。 又，作為本發明之波長選擇機構，可應用適當之介電多 層膜，藉此具有自曝光用光波長選擇性地截止所期望之波 長區域等光學設計之自由度。進而，若選擇確保檢查中所 必需之波長區域（例如500 nm〜650 nm之範圍）内之光透過 的波長選擇機構，則有利於光罩之製造或管理。 於將本發明之波長選擇機構設置於裝設在光罩上之護膜 上之情形時，獲得可於之後對光罩附加波長選擇功能之便 利性，或拆卸、更換之便利。 又，就本發明之光罩而言，無論是否使用具有波長選擇 功能之曝光裝置，均可於複數個曝光裝置間利用相同之光 罩轉印相同之轉印圖案。 根據以上内容可明確，於使用具有包含複數個峰值波長 之曝光用光之曝光裝置進行圖案之轉印時，根據本發明， 較之先前之方法可實現解像度更高之圖案轉印，例如，於 形成藉由液晶顯示面板中使用之IT〇(Indium Tin 〇xides， 氧化銦錫）膜等導電性膜之圖案化形成的、具有微細之線 與間隙圖案之電極部分時，適宜使用本發明β或者，於液 晶顯示面板中使用之TFT(Thin Fum Transistor，薄膜電晶 體）中，當形成如電晶體部分之通道般需要細線寬之解像 的圖案時，適宜使用本發明。 162168.doc •29- ¢1 201241550 【圖式簡單說明】 圖1係表不本發明之光罩之構成之剖面圖，（幻係表示於 透月基板之轉印圖案之形成面之相反側設置有波長選擇機 構之It形’⑻係表示於轉印圖案形成面設置有波長選擇機 構之情形’（e)係表示於裝設至光罩上之護膜上設置有波長 選擇機構之情形。 圖2係表示本發明之波長選擇機構藉由介電多層膜而形 成之情形時之構成的剖面圖。 圖3係表不由本發明之波長選擇機構而獲得之反射率特 性之一例的圖。 圖4(a)〜⑴係表示本發明之基板刻蝕型之利文森 (Levenson)型相位偏移光罩之製造步驟的剖面圖。 圖5係本發明之護膜裝設型之利文森型相位偏移光罩之 剖面圖。 圖6係表示實施例丨之光罩之解像度驗證用圖案之圖。 圖7係表示實施例1之光罩之解像度之驗證結果的圖。 【主要元件符號說明】 1 透明基板 2 轉印圖案 3 波長選擇機構 4 護膜用膜 5 護膜框架 10 透明基板 11 遮光膜 162168.doc -30· 201241550 12 光阻膜 13 波長選擇機構 14 護膜用膜 15 護膜框架 31 基體 32 高折射率材料 33 低折射率材料 162168.doc -31You use a positive photoresist). The horse's foot is 11% or less, and the removed area is penetrated. (Furthermore, when the photoresist on the transferred body is not satisfied with the above conditions, 162J68.doc •25- 201241550 is as follows : When the exposure is performed using an actual photomask, unevenness in the line width generated in the mask surface or unevenness in the illumination of the exposure light occurs (see Fig. 7). β Further, as the transfer target The flow condition is such that the area of the photoresist film which is actually exposed through the mask by development (the area where the transmittance of the exposure is 4% or more) is enlarged by excessive development (〇Ver_deVel〇pment) And the amount of expansion is 〇2 μηη at each edge. Further, the imaginary state is as follows: the enlarged region is further 0.25 by each edge of the line width formed on the transfer target by etching. That is, the width of the exposed region is enlarged by the development and etching, so that the two edges are enlarged (0.2x2+ 0.25χ2)=0·9 μΐΏ, and the mask of the present embodiment is used for patterning. Optical light for exposure to the object to be transferred The case is set to ΝΑ=0·083, σ=0.9. When the wavelength selection mechanism of the present embodiment is provided, the wavelength intensity ratio of the exposure light is set to g/h/i=0/0/100, and In order to reduce the exposure magnification = 1 〇, the transmittance of the light-shielding portion A of the mask 2 is set to 〇%, the transmittance of the light-transmitting portion B is set to 100 / 〇, and the phase shift amount is set to 〇, and the phase is set. The transmittance of the offset portion C is set to 100° /. ' and the phase shift amount is set to 18 degrees. According to the above conditions, the line and gap pattern of the 光 5 μιη to 3 0 of the mask are transmitted. The light intensity curve is plotted in units of G1 _. At this time, 'II is performed by the photographing mechanism provided with the CCD (photographing element) on the exposure light that has passed through the mask (4), and the image information obtained from the image is obtained. The light intensity curve is obtained. The following simulator is used: it is equipped with an exposure light and imaging optical system that approximates the optical characteristics to the actual exposure area: 162168.doc * 26 - 201241550 Inspection light and inspection optical system 'will pass Checking that the inspection light of the optical system is irradiated to the photomask, thereby being transferred to and from the actual exposure apparatus (4) The transfer image is obtained by imaging with a photographing mechanism such as a CCD. By the light intensity curve obtained as described above, a 2 〇 (four) line and a gap pattern can be selected as the condition for satisfying the pattern formation described above. According to the 2.0, the line and the gap The transmittance curve of the pattern (refer to the figure, the minimum transmittance of the region where the photoresist film is to be left in the transfer target, and the transmittance of the region where the photoresist is to be removed is 4% or more, which satisfies the simultaneous realization of light. The condition of the residual film and the complete removal of the resist film. Further, the width of the region having the above transmittance of 4% or more is I.1 _, and therefore, as described above, the line width is practically compared by the development process and the etching process. The exposed area is enlarged 〇9 The exposed area is finally 2 宽 wide on the transferred body. According to the above situation, based on the transmittance curve and by simulation, it can be confirmed that the 2 () line and the gap pattern formed on the mask of the present embodiment can form a line of 2. 〇 μπι on the object to be transferred. Gap pattern. Further, according to another embodiment of the present invention, a substrate (four) type phase shift mask (pathless type) having no light shielding film pattern is produced, and the resolution of the image is verified in the same manner as in the present embodiment, and as a result, it is confirmed that the resolution is improved. The effect. (Comparative Example 1) For the photomask in which the wavelength selecting mechanism of the present invention is not provided (the resolution of the image is shown in Fig. 4), the wavelength intensity ratio of the exposure light is set to g/h/i = 34.8/32.1. /33. In addition to the above, the transmission curve of the 2.0 μηι line and the gap pattern is obtained in the same manner as the above-described embodiment 162168.doc -27·201241550 (refer to the drawing of the black circle in FIG. 7). It satisfies the exposure conditions (the area that has been transmitted through the reticle) for both the area remaining after the development of the photoresist film as an etch mask and the area where the photoresist is completely removed after development. In terms of transmittance of light, the minimum transmittance of the region where the film remains is 11% or less, and the transmittance of the removed region is 40% or more, and the line formed by the 〇μιη line on the mask In the gap pattern, a 2 〇μηι line and a gap pattern could not be formed on the transfer target. (Example 2) A wavelength selection mechanism including the same dielectric multilayer film as in Example 1 was formed on the back surface of the reticle as shown in Fig. 1. The binary mask shown in (a) is the same as in the first embodiment, and the line is used. The resolution of the transfer pattern was evaluated with the gap pattern. As a result, based on the transmittance curve and confirmed by simulation, the transfer line width was 2·8 («ini pattern. (Comparative Example 2) The second-order photomask which was produced in the same manner as in the second embodiment except the above-described wavelength selection means was subjected to the evaluation of the resolution of the transfer pattern in the same manner as in the example. As a result, it was confirmed by the simulation based on the transmittance curve The pattern of 3.0 μηι was not resolved. According to the results of the above Example 2 and Comparative Example 2, the present invention has an effect of reducing the line width of the transfer by about 7%. From the above, it is clear that the present invention The wavelength selection mechanism can reduce the transmittance (cutoff light) in the wavelength region of the specific wavelength of 162168.doc -28 - 201241550 by transmitting the necessary wavelength region of the wavelength of the exposure light. The light cutoff is mainly by light. By the reflection, it is possible to suppress the generation of heat due to light absorption, and it is possible to suppress the change in the size of the transfer pattern caused by the temperature rise of the film for the mask or the film. Further, as the wavelength selecting means of the present invention, an appropriate dielectric multilayer film can be applied, thereby having a degree of freedom in optical design such as selectively turning off a desired wavelength region from the wavelength of light for exposure. Selecting a wavelength selection mechanism that ensures transmission of light in a wavelength region (for example, a range of 500 nm to 650 nm) necessary for inspection is advantageous for manufacturing or managing the photomask. The wavelength selection mechanism of the present invention is installed in the installation. In the case of the film on the reticle, the convenience of attaching the wavelength selection function to the reticle or the convenience of disassembly and replacement is obtained. Further, with regard to the reticle of the present invention, whether or not the wavelength is used The function of the exposure device can be used to transfer the same transfer pattern between the plurality of exposure devices using the same mask. According to the above, it is clear that when pattern transfer is performed using an exposure apparatus having exposure light having a plurality of peak wavelengths, according to the present invention, pattern transfer having higher resolution can be realized than the previous method, for example, When forming an electrode portion having a fine line and gap pattern formed by patterning a conductive film such as an IT (Indium Tin 〇xides) film used in a liquid crystal display panel, it is preferable to use the present invention β or In a TFT (Thin Fum Transistor) used in a liquid crystal display panel, the present invention is suitably used when a pattern of a thin line width resolution is required as a channel of a transistor portion. 162168.doc •29- ¢1 201241550 [Simplified description of the drawings] Fig. 1 is a cross-sectional view showing the configuration of the reticle of the present invention, (the phantom system is set on the opposite side of the formation surface of the transfer pattern of the moon-transparent substrate) The It-shaped '(8) having the wavelength selecting means is a case where the transfer pattern forming surface is provided with the wavelength selecting means' (e) means that the wavelength selecting means is provided on the protective film attached to the photomask. 2 is a cross-sectional view showing a configuration in which the wavelength selecting means of the present invention is formed by a dielectric multilayer film. Fig. 3 is a view showing an example of reflectance characteristics obtained by the wavelength selecting means of the present invention. (a) to (1) are cross-sectional views showing a manufacturing step of a substrate etch type Levenson type phase shift mask of the present invention. Fig. 5 is a Levinson type phase shift of the film mounting type of the present invention. Fig. 6 is a view showing a pattern for verifying the resolution of the mask of the embodiment. Fig. 7 is a view showing the result of verifying the resolution of the mask of the first embodiment. Transparent substrate 2 transfer pattern 3 Wavelength selection mechanism 4 Film for film protection 5 Film frame 10 Transparent substrate 11 Light shielding film 162168.doc -30· 201241550 12 Photoresist film 13 Wavelength selection mechanism 14 Film for film 15 Film frame 31 Base 32 High refractive index material 33 low refractive index material 162168.doc -31