KR101369201B1 - 에피택셜 기판 및 액상 에피택셜 성장방법 - Google Patents

에피택셜 기판 및 액상 에피택셜 성장방법 Download PDF

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Publication number
KR101369201B1
KR101369201B1 KR1020070076979A KR20070076979A KR101369201B1 KR 101369201 B1 KR101369201 B1 KR 101369201B1 KR 1020070076979 A KR1020070076979 A KR 1020070076979A KR 20070076979 A KR20070076979 A KR 20070076979A KR 101369201 B1 KR101369201 B1 KR 101369201B1
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KR
South Korea
Prior art keywords
epitaxial
substrate
carbon
layer
concentration
Prior art date
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KR1020070076979A
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English (en)
Korean (ko)
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KR20080012767A (ko
Inventor
수수무 히구치
마코토 가와사키
Original Assignee
신에쯔 한도타이 가부시키가이샤
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Application filed by 신에쯔 한도타이 가부시키가이샤 filed Critical 신에쯔 한도타이 가부시키가이샤
Publication of KR20080012767A publication Critical patent/KR20080012767A/ko
Application granted granted Critical
Publication of KR101369201B1 publication Critical patent/KR101369201B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR1020070076979A 2006-08-04 2007-07-31 에피택셜 기판 및 액상 에피택셜 성장방법 KR101369201B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006213215A JP4946247B2 (ja) 2006-08-04 2006-08-04 エピタキシャル基板および液相エピタキシャル成長方法
JPJP-P-2006-00213215 2006-08-04

Publications (2)

Publication Number Publication Date
KR20080012767A KR20080012767A (ko) 2008-02-12
KR101369201B1 true KR101369201B1 (ko) 2014-03-04

Family

ID=39054950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070076979A KR101369201B1 (ko) 2006-08-04 2007-07-31 에피택셜 기판 및 액상 에피택셜 성장방법

Country Status (4)

Country Link
JP (1) JP4946247B2 (zh)
KR (1) KR101369201B1 (zh)
CN (1) CN101118940B (zh)
TW (1) TWI405880B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101772511B1 (ko) * 2010-06-22 2017-08-30 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법
JP6741179B1 (ja) * 2020-02-18 2020-08-19 信越半導体株式会社 シリコン単結晶の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0769792A (ja) * 1993-08-30 1995-03-14 Canon Inc ダイヤモンド結晶のエピタキシャル成長法及び選択エピタキシャル成長法
KR100272139B1 (ko) * 1996-05-31 2000-12-01 니시무로 타이죠 반도체 액상에피택셜성장방법 및 그 장치
KR20010093791A (ko) * 1999-10-29 2001-10-29 와다 다다시 인화갈륨 발광소자 및 그 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933899A (zh) * 1972-07-31 1974-03-28
JPS6019676B2 (ja) * 1978-12-06 1985-05-17 株式会社東芝 半導体発光装置
JP2701113B2 (ja) * 1992-07-31 1998-01-21 信越半導体株式会社 ＧａＰ系発光素子基板及びその製造方法
JP2000323499A (ja) * 1999-05-10 2000-11-24 Hitachi Cable Ltd 化合物半導体エピタキシャルウェハ
JP2001085340A (ja) * 1999-09-16 2001-03-30 Hitachi Cable Ltd カーボン治具
WO2002001624A1 (en) * 2000-06-27 2002-01-03 Motorola, Inc. Semiconductor component and method of manufacturing
JP2002050791A (ja) * 2000-07-31 2002-02-15 Hitachi Cable Ltd 発光ダイオード用ＡｌＧａＡｓエピタキシャルウェーハおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0769792A (ja) * 1993-08-30 1995-03-14 Canon Inc ダイヤモンド結晶のエピタキシャル成長法及び選択エピタキシャル成長法
KR100272139B1 (ko) * 1996-05-31 2000-12-01 니시무로 타이죠 반도체 액상에피택셜성장방법 및 그 장치
KR20010093791A (ko) * 1999-10-29 2001-10-29 와다 다다시 인화갈륨 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
CN101118940B (zh) 2011-10-12
KR20080012767A (ko) 2008-02-12
CN101118940A (zh) 2008-02-06
TW200809020A (en) 2008-02-16
JP2008037688A (ja) 2008-02-21
TWI405880B (zh) 2013-08-21
JP4946247B2 (ja) 2012-06-06

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