KR101360815B1 - 반도체 디바이스를 위한 본드 패드 지지 구조체 - Google Patents

반도체 디바이스를 위한 본드 패드 지지 구조체 Download PDF

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KR101360815B1
KR101360815B1 KR1020107007877A KR20107007877A KR101360815B1 KR 101360815 B1 KR101360815 B1 KR 101360815B1 KR 1020107007877 A KR1020107007877 A KR 1020107007877A KR 20107007877 A KR20107007877 A KR 20107007877A KR 101360815 B1 KR101360815 B1 KR 101360815B1
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bond pad
metal layer
metal
under
passivation
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KR20100077161A (ko
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요제 에프. 안톨
욘 더블유. 오센바흐
쿠르트 지. 슈타이너
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에이저 시스템즈 엘엘시
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H10W72/9226—Bond pads being integral with underlying chip-level interconnections with via interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1020107007877A 2007-10-31 2007-10-31 반도체 디바이스를 위한 본드 패드 지지 구조체 Active KR101360815B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2007/083183 WO2009058143A1 (en) 2007-10-31 2007-10-31 Bond pad support structure for semiconductor device

Publications (2)

Publication Number Publication Date
KR20100077161A KR20100077161A (ko) 2010-07-07
KR101360815B1 true KR101360815B1 (ko) 2014-02-11

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KR1020107007877A Active KR101360815B1 (ko) 2007-10-31 2007-10-31 반도체 디바이스를 위한 본드 패드 지지 구조체

Country Status (5)

Country Link
US (1) US8183698B2 (enExample)
EP (2) EP2568498A3 (enExample)
JP (1) JP2011502352A (enExample)
KR (1) KR101360815B1 (enExample)
WO (1) WO2009058143A1 (enExample)

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EP2568498A3 (en) 2007-10-31 2013-04-24 Agere Systems Inc. Bond pad support structure for semiconductor device
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JP5730062B2 (ja) 2011-02-21 2015-06-03 株式会社ジャパンディスプレイ 表示装置
WO2011107044A2 (zh) * 2011-04-19 2011-09-09 华为技术有限公司 焊盘的防水结构、防水焊盘和形成该防水结构的方法
US8435824B2 (en) * 2011-07-07 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illumination sensor having a bonding pad structure and method of making the same
US8994181B2 (en) * 2011-08-18 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad structure to reduce bond pad corrosion
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US9064707B2 (en) * 2011-09-14 2015-06-23 Micronas Gmbh Bonding contact area on a semiconductor substrate
US20130241058A1 (en) * 2012-03-16 2013-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Wire Bonding Structures for Integrated Circuits
US9166054B2 (en) 2012-04-13 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101933015B1 (ko) 2012-04-19 2018-12-27 삼성전자주식회사 반도체 장치의 패드 구조물, 그의 제조 방법 및 패드 구조물을 포함하는 반도체 패키지
US20130320522A1 (en) * 2012-05-30 2013-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Re-distribution Layer Via Structure and Method of Making Same
US9536833B2 (en) 2013-02-01 2017-01-03 Mediatek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
US9455226B2 (en) 2013-02-01 2016-09-27 Mediatek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
CN104952822A (zh) * 2014-03-25 2015-09-30 中芯国际集成电路制造(上海)有限公司 一种焊盘结构
US9245846B2 (en) * 2014-05-06 2016-01-26 International Business Machines Corporation Chip with programmable shelf life
US9960130B2 (en) 2015-02-06 2018-05-01 UTAC Headquarters Pte. Ltd. Reliable interconnect
EP3131118B1 (en) * 2015-08-12 2019-04-17 MediaTek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
US9922947B2 (en) * 2016-04-28 2018-03-20 Stmicroelectronics S.R.L. Bonding pad structure over active circuitry
US10896885B2 (en) * 2017-09-13 2021-01-19 Polar Semiconductor, Llc High-voltage MOSFET structures
US11705395B2 (en) * 2018-06-25 2023-07-18 Intel Corporation Core fill to reduce dishing and metal pillar fill to increase metal density of interconnects
TWI731431B (zh) * 2019-10-04 2021-06-21 旺宏電子股份有限公司 接墊結構
US11004833B1 (en) * 2020-02-17 2021-05-11 Xilinx, Inc. Multi-chip stacked devices
US11521904B2 (en) * 2020-03-11 2022-12-06 Texas Instruments Incorporated Wire bond damage detector including a detection bond pad over a first and a second connected structures
US11348883B2 (en) * 2020-03-27 2022-05-31 Texas Instruments Incorporated High voltage isolation barrier with electric overstress integrity
US11243573B2 (en) * 2020-04-28 2022-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package, display apparatus and manufacturing method of semiconductor package
JP7519248B2 (ja) * 2020-09-18 2024-07-19 新光電気工業株式会社 配線基板及びその製造方法

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Publication number Publication date
EP2568498A3 (en) 2013-04-24
WO2009058143A1 (en) 2009-05-07
JP2011502352A (ja) 2011-01-20
KR20100077161A (ko) 2010-07-07
EP2195837A1 (en) 2010-06-16
US8183698B2 (en) 2012-05-22
EP2568498A2 (en) 2013-03-13
US20100201000A1 (en) 2010-08-12

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