KR101349266B1 - 플라즈마 처리 장치 및 마이크로 크리스탈 실리콘의 성막 방법 - Google Patents
플라즈마 처리 장치 및 마이크로 크리스탈 실리콘의 성막 방법 Download PDFInfo
- Publication number
- KR101349266B1 KR101349266B1 KR1020117015570A KR20117015570A KR101349266B1 KR 101349266 B1 KR101349266 B1 KR 101349266B1 KR 1020117015570 A KR1020117015570 A KR 1020117015570A KR 20117015570 A KR20117015570 A KR 20117015570A KR 101349266 B1 KR101349266 B1 KR 101349266B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- substrate
- hydrogen
- shower plate
- concentration
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 99
- 238000012545 processing Methods 0.000 title claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 19
- 229910052710 silicon Inorganic materials 0.000 title claims description 19
- 239000010703 silicon Substances 0.000 title claims description 19
- 239000013081 microcrystal Substances 0.000 title description 5
- 239000007789 gas Substances 0.000 claims abstract description 278
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims description 59
- 229910052739 hydrogen Inorganic materials 0.000 claims description 59
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 239000000446 fuel Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 68
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 20
- 229910052731 fluorine Inorganic materials 0.000 description 20
- 239000011737 fluorine Substances 0.000 description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 11
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2009-004023 | 2009-01-09 | ||
| JP2009004023 | 2009-01-09 | ||
| PCT/JP2010/000093 WO2010079766A1 (ja) | 2009-01-09 | 2010-01-08 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110094115A KR20110094115A (ko) | 2011-08-19 |
| KR101349266B1 true KR101349266B1 (ko) | 2014-01-10 |
Family
ID=42316532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117015570A KR101349266B1 (ko) | 2009-01-09 | 2010-01-08 | 플라즈마 처리 장치 및 마이크로 크리스탈 실리콘의 성막 방법 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5378416B2 (ja) |
| KR (1) | KR101349266B1 (ja) |
| CN (1) | CN102272896A (ja) |
| DE (1) | DE112010000869B4 (ja) |
| TW (1) | TW201112886A (ja) |
| WO (1) | WO2010079766A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI659674B (zh) | 2011-10-05 | 2019-05-11 | 應用材料股份有限公司 | 電漿處理設備及蓋組件 |
| US10232324B2 (en) | 2012-07-12 | 2019-03-19 | Applied Materials, Inc. | Gas mixing apparatus |
| KR102558925B1 (ko) * | 2016-02-15 | 2023-07-24 | 삼성디스플레이 주식회사 | 플라즈마 증착 장치 |
| US11535936B2 (en) * | 2018-07-23 | 2022-12-27 | Lam Research Corporation | Dual gas feed showerhead for deposition |
| JP7175162B2 (ja) * | 2018-11-05 | 2022-11-18 | 東京エレクトロン株式会社 | 被処理体のプラズマエッチング方法及びプラズマエッチング装置 |
| JP2022515081A (ja) | 2018-12-20 | 2022-02-17 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバの処理空間に改善されたガス流を供給するための方法および装置 |
| KR102409660B1 (ko) * | 2019-07-18 | 2022-06-22 | 주식회사 히타치하이테크 | 플라스마 처리 장치 |
| KR20230143951A (ko) * | 2022-04-06 | 2023-10-13 | 가부시키가이샤 아루박 | 플라즈마 처리 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0139741B1 (ko) * | 1994-10-11 | 1998-07-15 | 이헌조 | 박막트랜지스터 제조방법 |
| JP2007173848A (ja) * | 2001-01-22 | 2007-07-05 | Tokyo Electron Ltd | 処理装置 |
| KR20080086361A (ko) * | 2007-03-21 | 2008-09-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 유동 확산기 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591269A (en) * | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
| US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| JP2002280377A (ja) * | 2001-03-19 | 2002-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP4176523B2 (ja) * | 2003-03-25 | 2008-11-05 | 独立行政法人科学技術振興機構 | 半導体装置の製造方法および半導体装置 |
| JP3837539B2 (ja) | 2003-03-25 | 2006-10-25 | 独立行政法人産業技術総合研究所 | プラズマｃｖｄ装置 |
| JP2006013799A (ja) | 2004-06-24 | 2006-01-12 | Tokai Rika Co Ltd | 携帯機 |
| JP4667425B2 (ja) | 2007-06-21 | 2011-04-13 | シャープ株式会社 | 磁気記録再生システム |
-
2010
- 2010-01-08 TW TW099100398A patent/TW201112886A/zh unknown
- 2010-01-08 WO PCT/JP2010/000093 patent/WO2010079766A1/ja active Application Filing
- 2010-01-08 DE DE112010000869T patent/DE112010000869B4/de active Active
- 2010-01-08 KR KR1020117015570A patent/KR101349266B1/ko active IP Right Grant
- 2010-01-08 JP JP2010545756A patent/JP5378416B2/ja active Active
- 2010-01-08 CN CN2010800041393A patent/CN102272896A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0139741B1 (ko) * | 1994-10-11 | 1998-07-15 | 이헌조 | 박막트랜지스터 제조방법 |
| JP2007173848A (ja) * | 2001-01-22 | 2007-07-05 | Tokyo Electron Ltd | 処理装置 |
| KR20080086361A (ko) * | 2007-03-21 | 2008-09-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 가스 유동 확산기 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2010079766A1 (ja) | 2012-06-21 |
| CN102272896A (zh) | 2011-12-07 |
| DE112010000869T5 (de) | 2012-11-15 |
| WO2010079766A1 (ja) | 2010-07-15 |
| DE112010000869T8 (de) | 2013-01-17 |
| DE112010000869B4 (de) | 2013-10-17 |
| TW201112886A (en) | 2011-04-01 |
| JP5378416B2 (ja) | 2013-12-25 |
| KR20110094115A (ko) | 2011-08-19 |
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