TW201112886A - Plasma treatment apparatus - Google Patents
Plasma treatment apparatus Download PDFInfo
- Publication number
- TW201112886A TW201112886A TW099100398A TW99100398A TW201112886A TW 201112886 A TW201112886 A TW 201112886A TW 099100398 A TW099100398 A TW 099100398A TW 99100398 A TW99100398 A TW 99100398A TW 201112886 A TW201112886 A TW 201112886A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- substrate
- chamber
- processing apparatus
- film
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000012545 processing Methods 0.000 claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 246
- 238000000034 method Methods 0.000 claims description 63
- 230000008569 process Effects 0.000 claims description 58
- 239000007921 spray Substances 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 94
- 239000001257 hydrogen Substances 0.000 description 51
- 229910052739 hydrogen Inorganic materials 0.000 description 51
- -1 fluorine radicals Chemical class 0.000 description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 28
- 239000000463 material Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 18
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 17
- 229910052731 fluorine Inorganic materials 0.000 description 17
- 239000011737 fluorine Substances 0.000 description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 150000003254 radicals Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- PUNXVEAWLAVABA-UHFFFAOYSA-N 1,2,3,4-tetrahydroanthracene;1,2,5,6-tetrahydroanthracene Chemical compound C1=CC=C2C=C(CCCC3)C3=CC2=C1.C1=CCCC2=C1C=C1CCC=CC1=C2 PUNXVEAWLAVABA-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical group NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009004023 | 2009-01-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201112886A true TW201112886A (en) | 2011-04-01 |
Family
ID=42316532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099100398A TW201112886A (en) | 2009-01-09 | 2010-01-08 | Plasma treatment apparatus |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5378416B2 (ja) |
| KR (1) | KR101349266B1 (ja) |
| CN (1) | CN102272896A (ja) |
| DE (1) | DE112010000869B4 (ja) |
| TW (1) | TW201112886A (ja) |
| WO (1) | WO2010079766A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI646869B (zh) * | 2011-10-05 | 2019-01-01 | 美商應用材料股份有限公司 | 對稱電漿處理腔室 |
| TWI835618B (zh) * | 2022-04-06 | 2024-03-11 | 日商愛發科股份有限公司 | 電漿處理裝置 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10232324B2 (en) * | 2012-07-12 | 2019-03-19 | Applied Materials, Inc. | Gas mixing apparatus |
| KR102558925B1 (ko) * | 2016-02-15 | 2023-07-24 | 삼성디스플레이 주식회사 | 플라즈마 증착 장치 |
| US11535936B2 (en) * | 2018-07-23 | 2022-12-27 | Lam Research Corporation | Dual gas feed showerhead for deposition |
| JP7175162B2 (ja) * | 2018-11-05 | 2022-11-18 | 東京エレクトロン株式会社 | 被処理体のプラズマエッチング方法及びプラズマエッチング装置 |
| CN113196444B (zh) | 2018-12-20 | 2024-07-02 | 应用材料公司 | 用于供应改良的气流至处理腔室的处理空间的方法和设备 |
| JP6987986B2 (ja) * | 2019-07-18 | 2022-01-05 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP7540958B2 (ja) | 2021-01-06 | 2024-08-27 | 株式会社堀場エステック | 濃度制御システム、濃度制御プログラム、及び濃度制御方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591269A (en) * | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
| US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| KR0139741B1 (ko) * | 1994-10-11 | 1998-07-15 | 이헌조 | 박막트랜지스터 제조방법 |
| JP4454621B2 (ja) * | 2001-01-22 | 2010-04-21 | 東京エレクトロン株式会社 | 処理装置 |
| JP2002280377A (ja) * | 2001-03-19 | 2002-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP3837539B2 (ja) | 2003-03-25 | 2006-10-25 | 独立行政法人産業技術総合研究所 | プラズマｃｖｄ装置 |
| JP4176523B2 (ja) * | 2003-03-25 | 2008-11-05 | 独立行政法人科学技術振興機構 | 半導体装置の製造方法および半導体装置 |
| JP2006013799A (ja) | 2004-06-24 | 2006-01-12 | Tokai Rika Co Ltd | 携帯機 |
| US8123902B2 (en) * | 2007-03-21 | 2012-02-28 | Applied Materials, Inc. | Gas flow diffuser |
| JP4667425B2 (ja) | 2007-06-21 | 2011-04-13 | シャープ株式会社 | 磁気記録再生システム |
-
2010
- 2010-01-08 DE DE112010000869T patent/DE112010000869B4/de active Active
- 2010-01-08 KR KR1020117015570A patent/KR101349266B1/ko active IP Right Grant
- 2010-01-08 WO PCT/JP2010/000093 patent/WO2010079766A1/ja active Application Filing
- 2010-01-08 CN CN2010800041393A patent/CN102272896A/zh active Pending
- 2010-01-08 JP JP2010545756A patent/JP5378416B2/ja active Active
- 2010-01-08 TW TW099100398A patent/TW201112886A/zh unknown
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI646869B (zh) * | 2011-10-05 | 2019-01-01 | 美商應用材料股份有限公司 | 對稱電漿處理腔室 |
| US10453656B2 (en) | 2011-10-05 | 2019-10-22 | Applied Materials, Inc. | Symmetric plasma process chamber |
| US10535502B2 (en) | 2011-10-05 | 2020-01-14 | Applied Materials, Inc. | Symmetric plasma process chamber |
| US10546728B2 (en) | 2011-10-05 | 2020-01-28 | Applied Materials, Inc. | Symmetric plasma process chamber |
| US10580620B2 (en) | 2011-10-05 | 2020-03-03 | Applied Materials, Inc. | Symmetric plasma process chamber |
| US10615006B2 (en) | 2011-10-05 | 2020-04-07 | Applied Materials, Inc. | Symmetric plasma process chamber |
| US11315760B2 (en) | 2011-10-05 | 2022-04-26 | Applied Materials, Inc. | Symmetric plasma process chamber |
| TWI835618B (zh) * | 2022-04-06 | 2024-03-11 | 日商愛發科股份有限公司 | 電漿處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102272896A (zh) | 2011-12-07 |
| WO2010079766A1 (ja) | 2010-07-15 |
| DE112010000869B4 (de) | 2013-10-17 |
| DE112010000869T8 (de) | 2013-01-17 |
| JP5378416B2 (ja) | 2013-12-25 |
| DE112010000869T5 (de) | 2012-11-15 |
| KR101349266B1 (ko) | 2014-01-10 |
| KR20110094115A (ko) | 2011-08-19 |
| JPWO2010079766A1 (ja) | 2012-06-21 |
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