KR101346342B1 - 낮은 열저항을 갖는 발광 다이오드 램프 - Google Patents

낮은 열저항을 갖는 발광 다이오드 램프 Download PDF

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Publication number
KR101346342B1
KR101346342B1 KR1020070032004A KR20070032004A KR101346342B1 KR 101346342 B1 KR101346342 B1 KR 101346342B1 KR 1020070032004 A KR1020070032004 A KR 1020070032004A KR 20070032004 A KR20070032004 A KR 20070032004A KR 101346342 B1 KR101346342 B1 KR 101346342B1
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KR
South Korea
Prior art keywords
lead
emitting diode
light emitting
connection portion
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070032004A
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English (en)
Korean (ko)
Other versions
KR20080089038A (ko
Inventor
즈바노프 알렉산더
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020070032004A priority Critical patent/KR101346342B1/ko
Priority to TW097111560A priority patent/TWI373152B/zh
Priority to EP08006182A priority patent/EP1976032A3/en
Priority to JP2008090731A priority patent/JP5063445B2/ja
Priority to US12/059,284 priority patent/US8278677B2/en
Publication of KR20080089038A publication Critical patent/KR20080089038A/ko
Priority to JP2011170634A priority patent/JP5461487B2/ja
Priority to JP2011248929A priority patent/JP5314108B2/ja
Application granted granted Critical
Publication of KR101346342B1 publication Critical patent/KR101346342B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020070032004A 2007-03-30 2007-03-30 낮은 열저항을 갖는 발광 다이오드 램프 Expired - Fee Related KR101346342B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020070032004A KR101346342B1 (ko) 2007-03-30 2007-03-30 낮은 열저항을 갖는 발광 다이오드 램프
EP08006182A EP1976032A3 (en) 2007-03-30 2008-03-28 Light emitting diode lamp with low thermal resistance
TW097111560A TWI373152B (en) 2007-03-30 2008-03-28 Light emitting diode lamp with low thermal resistance
US12/059,284 US8278677B2 (en) 2007-03-30 2008-03-31 Light emitting diode lamp with low thermal resistance
JP2008090731A JP5063445B2 (ja) 2007-03-30 2008-03-31 低い熱抵抗を有する発光ダイオードランプ
JP2011170634A JP5461487B2 (ja) 2007-03-30 2011-08-04 低い熱抵抗を有する発光ダイオードランプ
JP2011248929A JP5314108B2 (ja) 2007-03-30 2011-11-14 低い熱抵抗を有する発光ダイオードランプ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070032004A KR101346342B1 (ko) 2007-03-30 2007-03-30 낮은 열저항을 갖는 발광 다이오드 램프

Publications (2)

Publication Number Publication Date
KR20080089038A KR20080089038A (ko) 2008-10-06
KR101346342B1 true KR101346342B1 (ko) 2013-12-31

Family

ID=39619220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070032004A Expired - Fee Related KR101346342B1 (ko) 2007-03-30 2007-03-30 낮은 열저항을 갖는 발광 다이오드 램프

Country Status (5)

Country Link
US (1) US8278677B2 (enExample)
EP (1) EP1976032A3 (enExample)
JP (3) JP5063445B2 (enExample)
KR (1) KR101346342B1 (enExample)
TW (1) TWI373152B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928462B2 (en) * 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
CN102116829B (zh) * 2010-12-21 2013-02-06 杭州远方光电信息股份有限公司 一种二极管热阻测量方法及装置
USD1087430S1 (en) * 2023-05-22 2025-08-05 Creeled, Inc. Light-emitting diode package
USD1070144S1 (en) * 2023-05-22 2025-04-08 Creeled, Inc. Light-emitting diode package

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079578A (ja) * 2003-08-28 2005-03-24 Agilent Technol Inc 熱伝導率を向上させた発光デバイス・アセンブリ、それを含むシステム及び熱伝導率を向上する方法

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676668A (en) * 1969-12-29 1972-07-11 Gen Electric Solid state lamp assembly
US3609475A (en) * 1970-05-04 1971-09-28 Hewlett Packard Co Light-emitting diode package with dual-colored plastic encapsulation
FR2127239A5 (enExample) * 1971-03-01 1972-10-13 Radiotechnique Compelec
US3855606A (en) * 1971-12-23 1974-12-17 Licentia Gmbh Semiconductor arrangement
US3764862A (en) * 1972-10-19 1973-10-09 Fairchild Camera Instr Co Lead frame for light-emitting diodes
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
US4863806A (en) * 1985-06-25 1989-09-05 Hewlett-Packard Company Optical isolator
JPS63167768A (ja) 1986-12-29 1988-07-11 Kazuko Kawanishi 新規昆布食品及びその製造法
JPS63167768U (enExample) * 1987-04-22 1988-11-01
JPS63170978U (enExample) * 1987-04-24 1988-11-07
US4984057A (en) * 1989-05-01 1991-01-08 Adam Mii Semiconductor element string structure
JPH03100687A (ja) 1989-09-14 1991-04-25 Canon Inc 現像装置
JPH081354Y2 (ja) * 1990-01-31 1996-01-17 株式会社藤井合金製作所 配管端末接続構造
JP3100687B2 (ja) 1991-05-21 2000-10-16 旭光学工業株式会社 カメラの表示装置
JPH06216411A (ja) * 1993-01-20 1994-08-05 Rohm Co Ltd Ｌｅｄランプ
JP3420612B2 (ja) * 1993-06-25 2003-06-30 株式会社東芝 Ｌｅｄランプ
JPH07297479A (ja) * 1994-04-27 1995-11-10 Mitsubishi Electric Corp 光半導体装置およびその製造方法
JPH09246603A (ja) * 1996-03-08 1997-09-19 Nichia Chem Ind Ltd 発光ダイオード及びそれを用いた表示装置
US6054716A (en) * 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
JPH11103097A (ja) * 1997-07-30 1999-04-13 Rohm Co Ltd 半導体発光素子
JP3743186B2 (ja) * 1998-12-15 2006-02-08 松下電工株式会社 発光ダイオード
US6679608B2 (en) * 1999-01-25 2004-01-20 Gentex Corporation Sensor device having an integral anamorphic lens
US6683325B2 (en) * 1999-01-26 2004-01-27 Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
JP4074419B2 (ja) * 2000-03-14 2008-04-09 シャープ株式会社 半導体レーザ装置のワイヤボンディング方法
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
JP2002016292A (ja) * 2000-06-28 2002-01-18 Toshiba Lighting & Technology Corp Ｌｅｄ表示装置
TW454950U (en) 2000-09-19 2001-09-11 Liau Kuen Shiang Improvement of fixed base structure for light emitting diode
US6518600B1 (en) * 2000-11-17 2003-02-11 General Electric Company Dual encapsulation for an LED
TW486153U (en) 2001-01-20 2002-05-01 Haw Diann Enterprise Co Ltd Light-emitting diode support rack
JP2004524681A (ja) * 2001-01-31 2004-08-12 ジェンテクス・コーポレーション 放射線エミッタ装置及びその製造方法
US6646491B2 (en) * 2001-05-18 2003-11-11 Eugene Robert Worley, Sr. LED lamp package for packaging an LED driver with an LED
JP2003188418A (ja) * 2001-12-17 2003-07-04 Seiwa Electric Mfg Co Ltd Ｌｅｄランプ
US7543946B2 (en) * 2002-01-10 2009-06-09 Gentex Corporation Dimmable rearview assembly having a glare sensor
TW518775B (en) * 2002-01-29 2003-01-21 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
WO2003073520A1 (fr) * 2002-02-28 2003-09-04 Rohm Co.,Ltd. Lampe a diode electroluminescente
US7380961B2 (en) * 2002-04-24 2008-06-03 Moriyama Sangyo Kabushiki Kaisha Light source coupler, illuminant device, patterned conductor, and method for manufacturing light source coupler
TW548858B (en) 2002-05-23 2003-08-21 Chi-Hsing Hsu Light emitting diode decorating light bulb and fabricating method thereof
JP4400057B2 (ja) * 2003-02-03 2010-01-20 日亜化学工業株式会社 発光ダイオードランプ
US7420271B2 (en) * 2003-02-20 2008-09-02 Tsung Hsin Chen Heat conductivity and brightness enhancing structure for light-emitting diode
JP3100687U (ja) * 2003-09-25 2004-05-27 三得電子股▲分▼有限公司 高輝度発光ダイオード
KR20050050292A (ko) * 2003-11-25 2005-05-31 삼성전기주식회사 열방출부를 구비한 발광소자 램프
CN1655368A (zh) * 2004-02-10 2005-08-17 翁世杰 发光二极管结构及其制作方法
JP2005294334A (ja) * 2004-03-31 2005-10-20 Nan Ya Plast Corp 高散熱ｌｅｄ発光素子及びその製造方法
JP2006093672A (ja) 2004-08-26 2006-04-06 Toshiba Corp 半導体発光装置
TWI277223B (en) 2004-11-03 2007-03-21 Chen-Lun Hsingchen A low thermal resistance LED package
JP4902114B2 (ja) * 2004-12-16 2012-03-21 日亜化学工業株式会社 発光装置
US7405433B2 (en) * 2005-02-22 2008-07-29 Avago Technologies Ecbu Ip Pte Ltd Semiconductor light emitting device
JP2006237464A (ja) * 2005-02-28 2006-09-07 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2006352064A (ja) * 2005-05-19 2006-12-28 Toyoda Gosei Co Ltd Ｌｅｄランプ及びｌｅｄランプ装置
CN101227855B (zh) * 2005-08-05 2010-06-09 奥林巴斯医疗株式会社 发光单元
KR100729439B1 (ko) * 2006-03-23 2007-06-15 (주)싸이럭스 발광소자 패키지 구조체와 그 제조방법 및 이를 적용한발광소자의 제조방법
TW200737539A (en) * 2006-03-23 2007-10-01 Ind Tech Res Inst Light-emitting device and manufacturing method
JP2007266343A (ja) * 2006-03-29 2007-10-11 Toyoda Gosei Co Ltd 発光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079578A (ja) * 2003-08-28 2005-03-24 Agilent Technol Inc 熱伝導率を向上させた発光デバイス・アセンブリ、それを含むシステム及び熱伝導率を向上する方法

Also Published As

Publication number Publication date
JP5461487B2 (ja) 2014-04-02
TW200840102A (en) 2008-10-01
JP2012039156A (ja) 2012-02-23
TWI373152B (en) 2012-09-21
EP1976032A2 (en) 2008-10-01
US8278677B2 (en) 2012-10-02
JP5314108B2 (ja) 2013-10-16
EP1976032A3 (en) 2009-11-25
JP2011216919A (ja) 2011-10-27
KR20080089038A (ko) 2008-10-06
JP5063445B2 (ja) 2012-10-31
US20080237625A1 (en) 2008-10-02
JP2008258620A (ja) 2008-10-23

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