KR101338229B1 - 진공 처리 장치 - Google Patents

진공 처리 장치 Download PDF

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Publication number
KR101338229B1
KR101338229B1 KR1020120015871A KR20120015871A KR101338229B1 KR 101338229 B1 KR101338229 B1 KR 101338229B1 KR 1020120015871 A KR1020120015871 A KR 1020120015871A KR 20120015871 A KR20120015871 A KR 20120015871A KR 101338229 B1 KR101338229 B1 KR 101338229B1
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South Korea
Prior art keywords
vacuum
chamber
wafer
vacuum processing
conveyance
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KR1020120015871A
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English (en)
Korean (ko)
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KR20130083355A (ko
Inventor
료이치 이소무라
스스무 다우치
히데아키 곤도
미치아키 고바야시
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20130083355A publication Critical patent/KR20130083355A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020120015871A 2012-01-12 2012-02-16 진공 처리 장치 Active KR101338229B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-003692 2012-01-12
JP2012003692A JP2013143513A (ja) 2012-01-12 2012-01-12 真空処理装置

Publications (2)

Publication Number Publication Date
KR20130083355A KR20130083355A (ko) 2013-07-22
KR101338229B1 true KR101338229B1 (ko) 2013-12-06

Family

ID=48755623

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120015871A Active KR101338229B1 (ko) 2012-01-12 2012-02-16 진공 처리 장치

Country Status (5)

Country Link
US (1) US20130183121A1 (https=)
JP (1) JP2013143513A (https=)
KR (1) KR101338229B1 (https=)
CN (1) CN103208441A (https=)
TW (1) TWI471968B (https=)

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* Cited by examiner, † Cited by third party
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JP5785712B2 (ja) * 2010-12-28 2015-09-30 株式会社日立ハイテクノロジーズ 真空処理装置
US9117865B2 (en) * 2012-04-12 2015-08-25 Applied Materials, Inc. Robot systems, apparatus, and methods having independently rotatable waists
JP2014036025A (ja) * 2012-08-07 2014-02-24 Hitachi High-Technologies Corp 真空処理装置または真空処理装置の運転方法
JP6002532B2 (ja) * 2012-10-10 2016-10-05 株式会社日立ハイテクノロジーズ 真空処理装置及び真空処理方法
KR101530024B1 (ko) * 2013-12-20 2015-06-22 주식회사 유진테크 기판 처리 모듈, 이를 포함하는 기판 처리 장치 및 기판 전달 방법
KR102238649B1 (ko) * 2014-09-16 2021-04-09 삼성전자주식회사 반도체 칩 본딩 장치
JP6430889B2 (ja) * 2015-05-13 2018-11-28 株式会社日立ハイテクノロジーズ 真空処理装置およびその運転方法
US10062599B2 (en) * 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
JP6718755B2 (ja) * 2016-06-22 2020-07-08 株式会社日立ハイテク 真空処理装置およびその運転方法
SG11201901208RA (en) * 2016-10-18 2019-05-30 Mattson Tech Inc Systems and methods for workpiece processing
US11482434B2 (en) 2016-10-18 2022-10-25 Belting E-Town Semiconductor Technology Co., Ltd Systems and methods for workpiece processing
CN109936340A (zh) * 2017-12-19 2019-06-25 成都晶宝时频技术股份有限公司 一种石英谐振器连续微调系统及方法
US11077535B2 (en) * 2018-02-14 2021-08-03 Samsung Electronics Co., Ltd. Process system having locking pin and locking pin
DE102018113786A1 (de) * 2018-06-08 2019-12-12 Vat Holding Ag Waferübergabeeinheit und Waferübergabesystem
US11293551B2 (en) 2018-09-30 2022-04-05 ColdQuanta, Inc. Break-seal system with breakable-membrane bridging rings
CN113380680A (zh) * 2020-03-10 2021-09-10 上海临港凯世通半导体有限公司 硅片输运装置
KR102515863B1 (ko) 2020-03-24 2023-03-31 주식회사 히타치하이테크 진공 처리 장치
CN211879343U (zh) * 2020-04-10 2020-11-06 北京北方华创微电子装备有限公司 一种半导体加工设备
US12062564B2 (en) * 2020-09-25 2024-08-13 Hitachi High-Tech Corporation Operating method of vacuum processing apparatus
JP7803631B2 (ja) * 2022-02-21 2026-01-21 東京エレクトロン株式会社 基板処理システム、基板処理方法及び記録媒体
WO2025230551A1 (en) * 2024-04-30 2025-11-06 Brooks Automation Us, Llc Substrate processing apparatus with substrate feed through bypass and method therefor
CN119108320A (zh) * 2024-11-07 2024-12-10 深圳市柠檬光子科技有限公司 真空存储装置及真空存储方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839191B1 (ko) * 2007-03-28 2008-06-17 세메스 주식회사 기판 처리 장치 및 방법
JP2011091334A (ja) * 2009-10-26 2011-05-06 Ulvac Japan Ltd 基板処理装置
JP2011124564A (ja) * 2009-11-12 2011-06-23 Hitachi High-Technologies Corp 半導体被処理基板の真空処理システム及び半導体被処理基板の真空処理方法
KR20110099628A (ko) * 2010-03-02 2011-09-08 가부시키가이샤 히다치 하이테크놀로지즈 진공 처리 장치 및 기록 매체

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* Cited by examiner, † Cited by third party
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KR100267617B1 (ko) * 1993-04-23 2000-10-16 히가시 데쓰로 진공처리장치 및 진공처리방법
CN1902031A (zh) * 2003-11-10 2007-01-24 布卢希弗特科技公司 用于处理基于真空的半导体处理系统中的工件的方法和系统
US7486498B2 (en) * 2004-01-12 2009-02-03 Case Western Reserve University Strong substrate alloy and compressively stressed dielectric film for capacitor with high energy density
CN101855717B (zh) * 2007-11-09 2011-10-19 佳能安内华股份有限公司 在线型晶圆输送装置
JP5384925B2 (ja) * 2008-12-18 2014-01-08 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5208800B2 (ja) * 2009-02-17 2013-06-12 東京エレクトロン株式会社 基板処理システム及び基板搬送方法
TW201123340A (en) * 2009-11-12 2011-07-01 Hitachi High Tech Corp Vacuum processing system and vacuum processing method of semiconductor processing substrate
JP5282021B2 (ja) * 2009-12-14 2013-09-04 株式会社日立ハイテクノロジーズ 半導体処理システム及び半導体処理方法
JP2012009519A (ja) * 2010-06-23 2012-01-12 Hitachi High-Technologies Corp 真空処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839191B1 (ko) * 2007-03-28 2008-06-17 세메스 주식회사 기판 처리 장치 및 방법
JP2011091334A (ja) * 2009-10-26 2011-05-06 Ulvac Japan Ltd 基板処理装置
JP2011124564A (ja) * 2009-11-12 2011-06-23 Hitachi High-Technologies Corp 半導体被処理基板の真空処理システム及び半導体被処理基板の真空処理方法
KR20110099628A (ko) * 2010-03-02 2011-09-08 가부시키가이샤 히다치 하이테크놀로지즈 진공 처리 장치 및 기록 매체

Also Published As

Publication number Publication date
KR20130083355A (ko) 2013-07-22
JP2013143513A (ja) 2013-07-22
CN103208441A (zh) 2013-07-17
US20130183121A1 (en) 2013-07-18
TWI471968B (zh) 2015-02-01
TW201330163A (zh) 2013-07-16

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