KR101333866B1 - 산화인듐주석 표면의 ｃｍｐ를 위한 조성물 및 방법 - Google Patents

산화인듐주석 표면의 ｃｍｐ를 위한 조성물 및 방법 Download PDF

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Publication number
KR101333866B1
KR101333866B1 KR1020087022358A KR20087022358A KR101333866B1 KR 101333866 B1 KR101333866 B1 KR 101333866B1 KR 1020087022358 A KR1020087022358 A KR 1020087022358A KR 20087022358 A KR20087022358 A KR 20087022358A KR 101333866 B1 KR101333866 B1 KR 101333866B1
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KR
South Korea
Prior art keywords
polishing
ito
cmp
composition
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Expired - Fee Related
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KR1020087022358A
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English (en)
Korean (ko)
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KR20080105080A (ko
Inventor
필립 카터
네빈 나구이브
프레드 선
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20080105080A publication Critical patent/KR20080105080A/ko
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Publication of KR101333866B1 publication Critical patent/KR101333866B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020087022358A 2006-02-14 2007-02-14 산화인듐주석 표면의 ｃｍｐ를 위한 조성물 및 방법 Expired - Fee Related KR101333866B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US77310506P 2006-02-14 2006-02-14
US60/773,105 2006-02-14
US83023406P 2006-07-12 2006-07-12
US60/830,234 2006-07-12
PCT/US2007/003978 WO2007095322A1 (en) 2006-02-14 2007-02-14 Compositions and methods for cmp of indium tin oxide surfaces

Publications (2)

Publication Number Publication Date
KR20080105080A KR20080105080A (ko) 2008-12-03
KR101333866B1 true KR101333866B1 (ko) 2013-11-27

Family

ID=38371856

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087022358A Expired - Fee Related KR101333866B1 (ko) 2006-02-14 2007-02-14 산화인듐주석 표면의 ｃｍｐ를 위한 조성물 및 방법

Country Status (7)

Country Link
US (1) US20070190789A1 (enExample)
JP (1) JP5431736B2 (enExample)
KR (1) KR101333866B1 (enExample)
CN (1) CN101370898B (enExample)
MY (1) MY154806A (enExample)
TW (1) TWI341325B (enExample)
WO (1) WO2007095322A1 (enExample)

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US8367798B2 (en) * 2008-09-29 2013-02-05 The Regents Of The University Of California Active materials for photoelectric devices and devices that use the materials
JP5355099B2 (ja) * 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
US20100276071A1 (en) * 2009-04-29 2010-11-04 Solarmer Energy, Inc. Tandem solar cell
CN101941001B (zh) * 2009-07-03 2014-04-02 3M创新有限公司 亲水涂层、制品、涂料组合物和方法
US8440496B2 (en) * 2009-07-08 2013-05-14 Solarmer Energy, Inc. Solar cell with conductive material embedded substrate
US8372945B2 (en) 2009-07-24 2013-02-12 Solarmer Energy, Inc. Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials
US8399889B2 (en) 2009-11-09 2013-03-19 Solarmer Energy, Inc. Organic light emitting diode and organic solar cell stack
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
GB201018141D0 (en) 2010-10-27 2010-12-08 Pilkington Group Ltd Polishing coated substrates
CN103930954B (zh) * 2011-09-30 2017-02-15 唯景公司 改善的光学装置制造
JP6028046B2 (ja) * 2015-01-05 2016-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6282708B2 (ja) * 2016-10-07 2018-02-21 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法、及びその製造方法
KR102122125B1 (ko) * 2018-06-01 2020-06-11 주식회사 케이씨텍 연마용 슬러리 조성물
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
KR102784411B1 (ko) * 2018-10-19 2025-03-21 솔브레인 주식회사 금속산화물막 연마용 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법
JPWO2023203680A1 (enExample) 2022-04-20 2023-10-26
CN117511415A (zh) * 2023-11-03 2024-02-06 昂士特科技(深圳)有限公司 化学机械抛光组合物及其抛光方法

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EP1505639A1 (en) * 2002-04-30 2005-02-09 Hitachi Chemical Company, Ltd. Polishing fluid and polishing method

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EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
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JP3576364B2 (ja) * 1997-10-13 2004-10-13 株式会社日鉱マテリアルズ Ｉｔｏスパッタリングターゲットのクリーニング方法
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EP1505639A1 (en) * 2002-04-30 2005-02-09 Hitachi Chemical Company, Ltd. Polishing fluid and polishing method

Also Published As

Publication number Publication date
CN101370898A (zh) 2009-02-18
JP2009526659A (ja) 2009-07-23
KR20080105080A (ko) 2008-12-03
JP5431736B2 (ja) 2014-03-05
MY154806A (en) 2015-07-31
TWI341325B (en) 2011-05-01
US20070190789A1 (en) 2007-08-16
CN101370898B (zh) 2012-09-12
TW200734441A (en) 2007-09-16
WO2007095322A1 (en) 2007-08-23

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