CN101370898B - 用于氧化铟锡表面的化学机械抛光的组合物及方法 - Google Patents

用于氧化铟锡表面的化学机械抛光的组合物及方法 Download PDF

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Publication number
CN101370898B
CN101370898B CN2007800029169A CN200780002916A CN101370898B CN 101370898 B CN101370898 B CN 101370898B CN 2007800029169 A CN2007800029169 A CN 2007800029169A CN 200780002916 A CN200780002916 A CN 200780002916A CN 101370898 B CN101370898 B CN 101370898B
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CN
China
Prior art keywords
ito
polishing
cmp
composition
abrasive
Prior art date
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Expired - Fee Related
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CN2007800029169A
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English (en)
Chinese (zh)
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CN101370898A (zh
Inventor
菲利普·卡特
内文·纳吉布
弗雷德·孙
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Cabot Corp
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Cabot Corp
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Publication of CN101370898A publication Critical patent/CN101370898A/zh
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/138Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • H10K30/82Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN2007800029169A 2006-02-14 2007-02-14 用于氧化铟锡表面的化学机械抛光的组合物及方法 Expired - Fee Related CN101370898B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US77310506P 2006-02-14 2006-02-14
US60/773,105 2006-02-14
US83023406P 2006-07-12 2006-07-12
US60/830,234 2006-07-12
PCT/US2007/003978 WO2007095322A1 (en) 2006-02-14 2007-02-14 Compositions and methods for cmp of indium tin oxide surfaces

Publications (2)

Publication Number Publication Date
CN101370898A CN101370898A (zh) 2009-02-18
CN101370898B true CN101370898B (zh) 2012-09-12

Family

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Family Applications (1)

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CN2007800029169A Expired - Fee Related CN101370898B (zh) 2006-02-14 2007-02-14 用于氧化铟锡表面的化学机械抛光的组合物及方法

Country Status (7)

Country Link
US (1) US20070190789A1 (enExample)
JP (1) JP5431736B2 (enExample)
KR (1) KR101333866B1 (enExample)
CN (1) CN101370898B (enExample)
MY (1) MY154806A (enExample)
TW (1) TWI341325B (enExample)
WO (1) WO2007095322A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8367798B2 (en) * 2008-09-29 2013-02-05 The Regents Of The University Of California Active materials for photoelectric devices and devices that use the materials
JP5355099B2 (ja) * 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
US20100276071A1 (en) * 2009-04-29 2010-11-04 Solarmer Energy, Inc. Tandem solar cell
CN101941001B (zh) * 2009-07-03 2014-04-02 3M创新有限公司 亲水涂层、制品、涂料组合物和方法
US8440496B2 (en) * 2009-07-08 2013-05-14 Solarmer Energy, Inc. Solar cell with conductive material embedded substrate
US8372945B2 (en) 2009-07-24 2013-02-12 Solarmer Energy, Inc. Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials
US8399889B2 (en) 2009-11-09 2013-03-19 Solarmer Energy, Inc. Organic light emitting diode and organic solar cell stack
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
GB201018141D0 (en) 2010-10-27 2010-12-08 Pilkington Group Ltd Polishing coated substrates
CN103930954B (zh) * 2011-09-30 2017-02-15 唯景公司 改善的光学装置制造
JP6028046B2 (ja) * 2015-01-05 2016-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6282708B2 (ja) * 2016-10-07 2018-02-21 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法、及びその製造方法
KR102122125B1 (ko) * 2018-06-01 2020-06-11 주식회사 케이씨텍 연마용 슬러리 조성물
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
KR102784411B1 (ko) * 2018-10-19 2025-03-21 솔브레인 주식회사 금속산화물막 연마용 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법
JPWO2023203680A1 (enExample) 2022-04-20 2023-10-26
CN117511415A (zh) * 2023-11-03 2024-02-06 昂士特科技(深圳)有限公司 化学机械抛光组合物及其抛光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1226591A (zh) * 1998-02-20 1999-08-25 长兴化学工业股份有限公司 用于加工半导体的化学机械研磨组合物
CN1238812A (zh) * 1996-09-24 1999-12-15 卡伯特公司 用于化学机械抛光的多氧化剂浆料
CN1650403A (zh) * 2002-04-30 2005-08-03 日立化成工业株式会社 研磨液及研磨方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
US6743723B2 (en) * 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
KR19980024900A (ko) * 1996-09-24 1998-07-06 마르타 앤 피네칸 화학적 기계적 연마용 복수 산화제 슬러리
JP3576364B2 (ja) * 1997-10-13 2004-10-13 株式会社日鉱マテリアルズ Itoスパッタリングターゲットのクリーニング方法
TW416104B (en) * 1998-08-28 2000-12-21 Kobe Steel Ltd Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate
JP2001020087A (ja) * 1999-07-05 2001-01-23 Toshiba Corp 銅の化学機械研磨用水系分散体
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US20060199473A1 (en) * 2003-04-03 2006-09-07 Masao Suzuki Polishing pad, process for producing the same and method of polishing therewith
KR100538810B1 (ko) * 2003-12-29 2005-12-23 주식회사 하이닉스반도체 반도체소자의 소자분리 방법
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1238812A (zh) * 1996-09-24 1999-12-15 卡伯特公司 用于化学机械抛光的多氧化剂浆料
CN1226591A (zh) * 1998-02-20 1999-08-25 长兴化学工业股份有限公司 用于加工半导体的化学机械研磨组合物
CN1650403A (zh) * 2002-04-30 2005-08-03 日立化成工业株式会社 研磨液及研磨方法

Also Published As

Publication number Publication date
CN101370898A (zh) 2009-02-18
JP2009526659A (ja) 2009-07-23
KR20080105080A (ko) 2008-12-03
JP5431736B2 (ja) 2014-03-05
MY154806A (en) 2015-07-31
TWI341325B (en) 2011-05-01
US20070190789A1 (en) 2007-08-16
KR101333866B1 (ko) 2013-11-27
TW200734441A (en) 2007-09-16
WO2007095322A1 (en) 2007-08-23

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