MY154806A - Compositions and method for cmp of indium tin oxide surfaces - Google Patents

Compositions and method for cmp of indium tin oxide surfaces

Info

Publication number
MY154806A
MY154806A MYPI20083062A MYPI20083062A MY154806A MY 154806 A MY154806 A MY 154806A MY PI20083062 A MYPI20083062 A MY PI20083062A MY PI20083062 A MYPI20083062 A MY PI20083062A MY 154806 A MY154806 A MY 154806A
Authority
MY
Malaysia
Prior art keywords
compositions
cmp
tin oxide
indium tin
oxide surfaces
Prior art date
Application number
MYPI20083062A
Other languages
English (en)
Inventor
Carter Phillip
Naguib Nevin
Sun Fred
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY154806A publication Critical patent/MY154806A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI20083062A 2006-02-14 2008-08-12 Compositions and method for cmp of indium tin oxide surfaces MY154806A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77310506P 2006-02-14 2006-02-14
US83023406P 2006-07-12 2006-07-12

Publications (1)

Publication Number Publication Date
MY154806A true MY154806A (en) 2015-07-31

Family

ID=38371856

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20083062A MY154806A (en) 2006-02-14 2008-08-12 Compositions and method for cmp of indium tin oxide surfaces

Country Status (7)

Country Link
US (1) US20070190789A1 (enExample)
JP (1) JP5431736B2 (enExample)
KR (1) KR101333866B1 (enExample)
CN (1) CN101370898B (enExample)
MY (1) MY154806A (enExample)
TW (1) TWI341325B (enExample)
WO (1) WO2007095322A1 (enExample)

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US8367798B2 (en) * 2008-09-29 2013-02-05 The Regents Of The University Of California Active materials for photoelectric devices and devices that use the materials
JP5355099B2 (ja) * 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
US20100276071A1 (en) * 2009-04-29 2010-11-04 Solarmer Energy, Inc. Tandem solar cell
CN101941001B (zh) * 2009-07-03 2014-04-02 3M创新有限公司 亲水涂层、制品、涂料组合物和方法
US8440496B2 (en) * 2009-07-08 2013-05-14 Solarmer Energy, Inc. Solar cell with conductive material embedded substrate
US8372945B2 (en) 2009-07-24 2013-02-12 Solarmer Energy, Inc. Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials
US8399889B2 (en) 2009-11-09 2013-03-19 Solarmer Energy, Inc. Organic light emitting diode and organic solar cell stack
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
GB201018141D0 (en) 2010-10-27 2010-12-08 Pilkington Group Ltd Polishing coated substrates
CN103930954B (zh) 2011-09-30 2017-02-15 唯景公司 改善的光学装置制造
JP6028046B2 (ja) * 2015-01-05 2016-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6282708B2 (ja) * 2016-10-07 2018-02-21 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法、及びその製造方法
KR102122125B1 (ko) * 2018-06-01 2020-06-11 주식회사 케이씨텍 연마용 슬러리 조성물
SG10201904669TA (en) 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
KR102784411B1 (ko) * 2018-10-19 2025-03-21 솔브레인 주식회사 금속산화물막 연마용 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법
CN119032149A (zh) 2022-04-20 2024-11-26 株式会社力森诺科 研磨剂及研磨方法
CN117511415A (zh) * 2023-11-03 2024-02-06 昂士特科技(深圳)有限公司 化学机械抛光组合物及其抛光方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
US6743723B2 (en) * 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
KR19980024900A (ko) * 1996-09-24 1998-07-06 마르타 앤 피네칸 화학적 기계적 연마용 복수 산화제 슬러리
JP3576364B2 (ja) * 1997-10-13 2004-10-13 株式会社日鉱マテリアルズ Ｉｔｏスパッタリングターゲットのクリーニング方法
CN1092697C (zh) * 1998-02-20 2002-10-16 长兴化学工业股份有限公司 用于加工半导体的化学机械研磨组合物
TW416104B (en) * 1998-08-28 2000-12-21 Kobe Steel Ltd Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate
JP2001020087A (ja) * 1999-07-05 2001-01-23 Toshiba Corp 銅の化学機械研磨用水系分散体
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
CN101037585B (zh) * 2002-04-30 2010-05-26 日立化成工业株式会社 研磨液及研磨方法
JPWO2004090963A1 (ja) * 2003-04-03 2006-07-06 日立化成工業株式会社 研磨パッド、その製造方法およびそれを用いた研磨方法
KR100538810B1 (ko) * 2003-12-29 2005-12-23 주식회사 하이닉스반도체 반도체소자의 소자분리 방법
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物

Also Published As

Publication number Publication date
KR101333866B1 (ko) 2013-11-27
CN101370898B (zh) 2012-09-12
KR20080105080A (ko) 2008-12-03
CN101370898A (zh) 2009-02-18
JP5431736B2 (ja) 2014-03-05
JP2009526659A (ja) 2009-07-23
WO2007095322A1 (en) 2007-08-23
TW200734441A (en) 2007-09-16
TWI341325B (en) 2011-05-01
US20070190789A1 (en) 2007-08-16

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