KR101326636B1 - 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 - Google Patents

발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 Download PDF

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KR101326636B1
KR101326636B1 KR1020097008650A KR20097008650A KR101326636B1 KR 101326636 B1 KR101326636 B1 KR 101326636B1 KR 1020097008650 A KR1020097008650 A KR 1020097008650A KR 20097008650 A KR20097008650 A KR 20097008650A KR 101326636 B1 KR101326636 B1 KR 101326636B1
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light emitting
emitting diode
semiconductor layer
carrier
diode arrangement
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KR1020097008650A
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Korean (ko)
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KR20090071622A (ko
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외르크 에리히 조르그
슈테판 그루버
지그프리드 헤르만
베르톨드 한
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오스람 옵토 세미컨덕터스 게엠베하
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KR1020097008650A 2006-09-27 2007-09-25 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 KR101326636B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006045691 2006-09-27
DE102006045691.2 2006-09-27
DE102007021009A DE102007021009A1 (de) 2006-09-27 2007-05-04 Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
DE102007021009.6 2007-05-04
PCT/DE2007/001733 WO2008040315A2 (de) 2006-09-27 2007-09-25 Leuchtdiodenanordnung und verfahren zur herstellung einer solchen

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KR20090071622A KR20090071622A (ko) 2009-07-01
KR101326636B1 true KR101326636B1 (ko) 2013-11-08

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US (2) US8154040B2 (ja)
EP (1) EP2057681B1 (ja)
JP (1) JP2010505252A (ja)
KR (1) KR101326636B1 (ja)
CN (1) CN101523598B (ja)
DE (1) DE102007021009A1 (ja)
TW (1) TWI359511B (ja)
WO (1) WO2008040315A2 (ja)

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KR101495071B1 (ko) 2008-06-24 2015-02-25 삼성전자 주식회사 서브 마운트 및 이를 이용한 발광 장치, 상기 서브마운트의 제조 방법 및 이를 이용한 발광 장치의 제조 방법
DE102008045653B4 (de) * 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102008049535A1 (de) * 2008-09-29 2010-04-08 Osram Opto Semiconductors Gmbh LED-Modul und Herstellungsverfahren
DE102009005907A1 (de) * 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102009039891A1 (de) * 2009-09-03 2011-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Modul aufweisend zumindest einen ersten Halbleiterkörper mit einer Strahlungsaustrittsseite und einer Isolationsschicht und Verfahren zu dessen Herstellung
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US8796115B2 (en) 2014-08-05
WO2008040315A2 (de) 2008-04-10
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EP2057681A2 (de) 2009-05-13
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