KR101326636B1 - 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 - Google Patents
발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 Download PDFInfo
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- KR101326636B1 KR101326636B1 KR1020097008650A KR20097008650A KR101326636B1 KR 101326636 B1 KR101326636 B1 KR 101326636B1 KR 1020097008650 A KR1020097008650 A KR 1020097008650A KR 20097008650 A KR20097008650 A KR 20097008650A KR 101326636 B1 KR101326636 B1 KR 101326636B1
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- light emitting
- emitting diode
- semiconductor layer
- carrier
- diode arrangement
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006045691 | 2006-09-27 | ||
DE102006045691.2 | 2006-09-27 | ||
DE102007021009A DE102007021009A1 (de) | 2006-09-27 | 2007-05-04 | Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen |
DE102007021009.6 | 2007-05-04 | ||
PCT/DE2007/001733 WO2008040315A2 (de) | 2006-09-27 | 2007-09-25 | Leuchtdiodenanordnung und verfahren zur herstellung einer solchen |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090071622A KR20090071622A (ko) | 2009-07-01 |
KR101326636B1 true KR101326636B1 (ko) | 2013-11-08 |
Family
ID=39154780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020097008650A KR101326636B1 (ko) | 2006-09-27 | 2007-09-25 | 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8154040B2 (ja) |
EP (1) | EP2057681B1 (ja) |
JP (1) | JP2010505252A (ja) |
KR (1) | KR101326636B1 (ja) |
CN (1) | CN101523598B (ja) |
DE (1) | DE102007021009A1 (ja) |
TW (1) | TWI359511B (ja) |
WO (1) | WO2008040315A2 (ja) |
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US7985970B2 (en) * | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
DE102008050538B4 (de) | 2008-06-06 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
KR101495071B1 (ko) | 2008-06-24 | 2015-02-25 | 삼성전자 주식회사 | 서브 마운트 및 이를 이용한 발광 장치, 상기 서브마운트의 제조 방법 및 이를 이용한 발광 장치의 제조 방법 |
DE102008045653B4 (de) * | 2008-09-03 | 2020-03-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102008049535A1 (de) * | 2008-09-29 | 2010-04-08 | Osram Opto Semiconductors Gmbh | LED-Modul und Herstellungsverfahren |
DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
DE102009036621B4 (de) | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
DE102009039891A1 (de) * | 2009-09-03 | 2011-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul aufweisend zumindest einen ersten Halbleiterkörper mit einer Strahlungsaustrittsseite und einer Isolationsschicht und Verfahren zu dessen Herstellung |
DE102009042205A1 (de) * | 2009-09-18 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul |
TWI401825B (zh) * | 2009-11-27 | 2013-07-11 | Ind Tech Res Inst | 發光二極體晶片的固晶方法及固晶完成之發光二極體 |
KR101648810B1 (ko) * | 2010-04-23 | 2016-08-31 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 조명 시스템 |
DE102010050832A1 (de) * | 2010-11-09 | 2012-05-10 | Osram Opto Semiconductors Gmbh | Lumineszenzkonversionselement, Verfahren zu dessen Herstellung und optoelektronisches Bauteil mit Lumineszenzkonversionselement |
KR101189081B1 (ko) * | 2010-12-16 | 2012-10-10 | 엘지이노텍 주식회사 | 웨이퍼 기판 접합 구조, 이를 포함하는 발광 소자 및 그 제조 방법 |
DE102011013369A1 (de) * | 2010-12-30 | 2012-07-05 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen |
DE102011016308A1 (de) * | 2011-04-07 | 2012-10-11 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
US8957429B2 (en) * | 2012-02-07 | 2015-02-17 | Epistar Corporation | Light emitting diode with wavelength conversion layer |
KR102087935B1 (ko) | 2012-12-27 | 2020-03-11 | 엘지이노텍 주식회사 | 발광 소자 |
JP6176032B2 (ja) * | 2013-01-30 | 2017-08-09 | 日亜化学工業株式会社 | 半導体発光素子 |
US10194537B2 (en) * | 2013-03-25 | 2019-01-29 | International Business Machines Corporation | Minimizing printed circuit board warpage |
DE102013107862A1 (de) | 2013-07-23 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils |
KR102209036B1 (ko) | 2014-08-26 | 2021-01-28 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
CN104329597B (zh) * | 2014-09-10 | 2016-11-23 | 广东中塑新材料有限公司 | 一种无基板led灯及其制备方法 |
DE102015107586B4 (de) * | 2015-05-13 | 2023-10-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement |
JP6517643B2 (ja) | 2015-09-16 | 2019-05-22 | 株式会社ジャパンディスプレイ | 表示装置の製造方法、および、表示装置 |
DE102016112584A1 (de) * | 2016-07-08 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Halbleiterchip, Verfahren zur Herstellung eines Halbleiterchips und Vorrichtung mit einer Mehrzahl von Halbleiterchips |
DE102016116353A1 (de) | 2016-09-01 | 2018-03-01 | Osram Opto Semiconductors Gmbh | Verfahren zum Ausrichten von Halbleiterchips, Verfahren zum Anordnen von Halbleiterchips, Vorrichtung zur Herstellung eines Halbleiterbauteils und Halbleiterbauteil |
DE102018200023A1 (de) * | 2018-01-02 | 2019-07-04 | Osram Gmbh | Konversionsvorrichtung mit geschichteter leiterstruktur |
JP7054005B2 (ja) * | 2018-09-28 | 2022-04-13 | 日亜化学工業株式会社 | 発光装置 |
DE102018217465A1 (de) * | 2018-10-12 | 2020-04-16 | Osram Gmbh | Vorrichtung mit mindestens einem lichtemittierenden bauelement und verfahren zum herstellen derselben |
US11735684B2 (en) | 2018-10-12 | 2023-08-22 | Osram Gmbh | Method for manufacturing a light-emitting device |
KR102200206B1 (ko) * | 2019-02-01 | 2021-01-08 | (주)솔라루체 | Led 패키지 |
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-
2007
- 2007-05-04 DE DE102007021009A patent/DE102007021009A1/de not_active Withdrawn
- 2007-09-20 TW TW096135028A patent/TWI359511B/zh active
- 2007-09-25 KR KR1020097008650A patent/KR101326636B1/ko active IP Right Grant
- 2007-09-25 CN CN2007800362960A patent/CN101523598B/zh active Active
- 2007-09-25 EP EP07817575.9A patent/EP2057681B1/de active Active
- 2007-09-25 JP JP2009529528A patent/JP2010505252A/ja active Pending
- 2007-09-25 WO PCT/DE2007/001733 patent/WO2008040315A2/de active Application Filing
- 2007-09-25 US US12/442,411 patent/US8154040B2/en active Active
-
2012
- 2012-04-05 US US13/440,472 patent/US8796115B2/en active Active
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EP0854520A2 (en) * | 1997-01-20 | 1998-07-22 | Oki Electric Industry Co., Ltd. | Method for mounting optical semiconductor device on supporting substrate |
US20050023550A1 (en) | 2003-07-29 | 2005-02-03 | Gelcore, Llc | Flip chip light emitting diode devices having thinned or removed substrates |
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US20060154393A1 (en) | 2005-01-11 | 2006-07-13 | Doan Trung T | Systems and methods for removing operating heat from a light emitting diode |
Also Published As
Publication number | Publication date |
---|---|
TWI359511B (en) | 2012-03-01 |
US8154040B2 (en) | 2012-04-10 |
KR20090071622A (ko) | 2009-07-01 |
EP2057681B1 (de) | 2018-11-07 |
US20120190140A1 (en) | 2012-07-26 |
JP2010505252A (ja) | 2010-02-18 |
WO2008040315A3 (de) | 2008-11-20 |
US8796115B2 (en) | 2014-08-05 |
WO2008040315A2 (de) | 2008-04-10 |
CN101523598A (zh) | 2009-09-02 |
EP2057681A2 (de) | 2009-05-13 |
CN101523598B (zh) | 2013-03-27 |
DE102007021009A1 (de) | 2008-04-10 |
TW200816530A (en) | 2008-04-01 |
US20100012955A1 (en) | 2010-01-21 |
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