KR101326636B1 - 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 - Google Patents

발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 Download PDF

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KR101326636B1
KR101326636B1 KR1020097008650A KR20097008650A KR101326636B1 KR 101326636 B1 KR101326636 B1 KR 101326636B1 KR 1020097008650 A KR1020097008650 A KR 1020097008650A KR 20097008650 A KR20097008650 A KR 20097008650A KR 101326636 B1 KR101326636 B1 KR 101326636B1
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light emitting
emitting diode
semiconductor layer
carrier
diode arrangement
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KR20090071622A (ko
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외르크 에리히 조르그
슈테판 그루버
지그프리드 헤르만
베르톨드 한
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07131—Means for applying material, e.g. for deposition or forming coatings

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KR1020097008650A 2006-09-27 2007-09-25 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 Active KR101326636B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006045691.2 2006-09-27
DE102006045691 2006-09-27
DE102007021009.6 2007-05-04
DE102007021009A DE102007021009A1 (de) 2006-09-27 2007-05-04 Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
PCT/DE2007/001733 WO2008040315A2 (de) 2006-09-27 2007-09-25 Leuchtdiodenanordnung und verfahren zur herstellung einer solchen

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KR20090071622A KR20090071622A (ko) 2009-07-01
KR101326636B1 true KR101326636B1 (ko) 2013-11-08

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US (2) US8154040B2 (https=)
EP (1) EP2057681B1 (https=)
JP (1) JP2010505252A (https=)
KR (1) KR101326636B1 (https=)
CN (1) CN101523598B (https=)
DE (1) DE102007021009A1 (https=)
TW (1) TWI359511B (https=)
WO (1) WO2008040315A2 (https=)

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DE102009042205A1 (de) * 2009-09-18 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
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US8957429B2 (en) * 2012-02-07 2015-02-17 Epistar Corporation Light emitting diode with wavelength conversion layer
KR102087935B1 (ko) 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子
US10194537B2 (en) * 2013-03-25 2019-01-29 International Business Machines Corporation Minimizing printed circuit board warpage
DE102013107862A1 (de) * 2013-07-23 2015-01-29 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils
KR102209036B1 (ko) 2014-08-26 2021-01-28 엘지이노텍 주식회사 발광 소자 패키지
CN104329597B (zh) * 2014-09-10 2016-11-23 广东中塑新材料有限公司 一种无基板led灯及其制备方法
DE102015107586B4 (de) * 2015-05-13 2023-10-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
JP6517643B2 (ja) * 2015-09-16 2019-05-22 株式会社ジャパンディスプレイ 表示装置の製造方法、および、表示装置
DE102016112584B4 (de) 2016-07-08 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip, Verfahren zur Herstellung eines Halbleiterchips und Vorrichtung mit einer Mehrzahl von Halbleiterchips
DE102016116353A1 (de) 2016-09-01 2018-03-01 Osram Opto Semiconductors Gmbh Verfahren zum Ausrichten von Halbleiterchips, Verfahren zum Anordnen von Halbleiterchips, Vorrichtung zur Herstellung eines Halbleiterbauteils und Halbleiterbauteil
DE102018200023A1 (de) * 2018-01-02 2019-07-04 Osram Gmbh Konversionsvorrichtung mit geschichteter leiterstruktur
JP7054005B2 (ja) * 2018-09-28 2022-04-13 日亜化学工業株式会社 発光装置
EP3864709B1 (de) 2018-10-12 2023-09-06 OSRAM GmbH Verfahren zum herstellen einer lichtemittierenden vorrichtung
DE102018217465A1 (de) * 2018-10-12 2020-04-16 Osram Gmbh Vorrichtung mit mindestens einem lichtemittierenden bauelement und verfahren zum herstellen derselben
KR102200206B1 (ko) * 2019-02-01 2021-01-08 (주)솔라루체 Led 패키지

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Publication number Publication date
US8154040B2 (en) 2012-04-10
DE102007021009A1 (de) 2008-04-10
US8796115B2 (en) 2014-08-05
CN101523598A (zh) 2009-09-02
JP2010505252A (ja) 2010-02-18
CN101523598B (zh) 2013-03-27
WO2008040315A3 (de) 2008-11-20
US20100012955A1 (en) 2010-01-21
TWI359511B (en) 2012-03-01
KR20090071622A (ko) 2009-07-01
EP2057681A2 (de) 2009-05-13
US20120190140A1 (en) 2012-07-26
WO2008040315A2 (de) 2008-04-10
EP2057681B1 (de) 2018-11-07
TW200816530A (en) 2008-04-01

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